JP2005191503A - レーザ装置、露光方法及び装置 - Google Patents

レーザ装置、露光方法及び装置 Download PDF

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Publication number
JP2005191503A
JP2005191503A JP2003434733A JP2003434733A JP2005191503A JP 2005191503 A JP2005191503 A JP 2005191503A JP 2003434733 A JP2003434733 A JP 2003434733A JP 2003434733 A JP2003434733 A JP 2003434733A JP 2005191503 A JP2005191503 A JP 2005191503A
Authority
JP
Japan
Prior art keywords
wavelength
laser
exposed
pattern
spectrum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2003434733A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005191503A5 (enExample
Inventor
Takashi Sukegawa
隆 助川
Kazuhiro Takahashi
和弘 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2003434733A priority Critical patent/JP2005191503A/ja
Priority to EP04030471A priority patent/EP1548501A3/en
Priority to US11/022,399 priority patent/US20050190801A1/en
Publication of JP2005191503A publication Critical patent/JP2005191503A/ja
Publication of JP2005191503A5 publication Critical patent/JP2005191503A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lasers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2003434733A 2003-12-26 2003-12-26 レーザ装置、露光方法及び装置 Withdrawn JP2005191503A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003434733A JP2005191503A (ja) 2003-12-26 2003-12-26 レーザ装置、露光方法及び装置
EP04030471A EP1548501A3 (en) 2003-12-26 2004-12-22 Laser unit, exposure apparatus for micro-lithiographie and associated method
US11/022,399 US20050190801A1 (en) 2003-12-26 2004-12-23 Laser unit, exposure apparatus and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003434733A JP2005191503A (ja) 2003-12-26 2003-12-26 レーザ装置、露光方法及び装置

Publications (2)

Publication Number Publication Date
JP2005191503A true JP2005191503A (ja) 2005-07-14
JP2005191503A5 JP2005191503A5 (enExample) 2007-03-08

Family

ID=34545111

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003434733A Withdrawn JP2005191503A (ja) 2003-12-26 2003-12-26 レーザ装置、露光方法及び装置

Country Status (3)

Country Link
US (1) US20050190801A1 (enExample)
EP (1) EP1548501A3 (enExample)
JP (1) JP2005191503A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006179937A (ja) * 2004-12-23 2006-07-06 Asml Netherlands Bv リソグラフィ装置、エキシマ・レーザ、およびデバイス製造方法
KR100873538B1 (ko) * 2006-06-09 2008-12-11 캐논 가부시끼가이샤 노광장치 및 디바이스의 제조 방법
US7656503B2 (en) 2006-03-17 2010-02-02 Canon Kabushiki Kaisha Exposure apparatus and image plane detecting method
US7826036B2 (en) 2007-12-06 2010-11-02 Canon Kabushiki Kaisha Scanning exposure apparatus and method of manufacturing device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100809717B1 (ko) * 2007-01-12 2008-03-06 삼성전자주식회사 더블 패터닝된 패턴의 전기적 특성을 콘트롤할 수 있는반도체 소자 및 그의 패턴 콘트롤방법
US9715180B2 (en) 2013-06-11 2017-07-25 Cymer, Llc Wafer-based light source parameter control

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01106426A (ja) * 1987-10-19 1989-04-24 Canon Inc 露光装置
US5191374A (en) * 1988-11-17 1993-03-02 Nikon Corporation Exposure control apparatus
JP2844696B2 (ja) * 1989-07-24 1999-01-06 株式会社ニコン レーザ処理装置
US5343270A (en) * 1990-10-30 1994-08-30 Nikon Corporation Projection exposure apparatus
US6252647B1 (en) * 1990-11-15 2001-06-26 Nikon Corporation Projection exposure apparatus
US5450436A (en) * 1992-11-20 1995-09-12 Kabushiki Kaisha Komatsu Seisakusho Laser gas replenishing apparatus and method in excimer laser system
JPH07120326A (ja) * 1993-10-22 1995-05-12 Komatsu Ltd 波長検出装置
EP1452894A3 (en) * 1996-09-02 2005-02-09 Nippon Telegraph and Telephone Corporation Optical signal processing apparatus and optical signal processing method
JP4102457B2 (ja) * 1997-05-09 2008-06-18 株式会社小松製作所 狭帯域化レーザ装置
US6721340B1 (en) * 1997-07-22 2004-04-13 Cymer, Inc. Bandwidth control technique for a laser
US6529531B1 (en) * 1997-07-22 2003-03-04 Cymer, Inc. Fast wavelength correction technique for a laser
US6078599A (en) * 1997-07-22 2000-06-20 Cymer, Inc. Wavelength shift correction technique for a laser
US6496528B2 (en) * 1999-09-03 2002-12-17 Cymer, Inc. Line narrowing unit with flexural grating mount
JP4497650B2 (ja) * 2000-04-26 2010-07-07 キヤノン株式会社 レーザ発振装置、露光装置および半導体デバイス製造方法
DE10146583A1 (de) * 2001-09-21 2003-04-17 Siemens Ag Vorrichtung und Verfahren zum optischen Abtasten einer Substratscheibe

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006179937A (ja) * 2004-12-23 2006-07-06 Asml Netherlands Bv リソグラフィ装置、エキシマ・レーザ、およびデバイス製造方法
US7817247B2 (en) 2004-12-23 2010-10-19 Asml Netherlands B.V. Lithographic apparatus, excimer laser and device manufacturing method
US8089613B2 (en) 2004-12-23 2012-01-03 Asml Netherlands B.V. Lithographic apparatus, excimer laser and device manufacturing method
US9316924B2 (en) 2004-12-23 2016-04-19 Asml Netherlands B.V. Lithographic apparatus, excimer laser and device manufacturing method
US7656503B2 (en) 2006-03-17 2010-02-02 Canon Kabushiki Kaisha Exposure apparatus and image plane detecting method
KR100873538B1 (ko) * 2006-06-09 2008-12-11 캐논 가부시끼가이샤 노광장치 및 디바이스의 제조 방법
US7477356B2 (en) 2006-06-09 2009-01-13 Canon Kabushiki Kaisha Exposure apparatus
US7826036B2 (en) 2007-12-06 2010-11-02 Canon Kabushiki Kaisha Scanning exposure apparatus and method of manufacturing device

Also Published As

Publication number Publication date
US20050190801A1 (en) 2005-09-01
EP1548501A3 (en) 2005-07-06
EP1548501A2 (en) 2005-06-29

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