JP2005175028A5 - - Google Patents
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- Publication number
- JP2005175028A5 JP2005175028A5 JP2003409764A JP2003409764A JP2005175028A5 JP 2005175028 A5 JP2005175028 A5 JP 2005175028A5 JP 2003409764 A JP2003409764 A JP 2003409764A JP 2003409764 A JP2003409764 A JP 2003409764A JP 2005175028 A5 JP2005175028 A5 JP 2005175028A5
- Authority
- JP
- Japan
- Prior art keywords
- processing method
- substrate
- plasma processing
- plasma
- processed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 claims 16
- 238000003672 processing method Methods 0.000 claims 15
- 239000007789 gas Substances 0.000 claims 6
- 230000005684 electric field Effects 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 239000000470 constituent Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 238000011144 upstream manufacturing Methods 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910021472 group 8 element Inorganic materials 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 230000000737 periodic effect Effects 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003409764A JP2005175028A (ja) | 2003-12-09 | 2003-12-09 | プラズマ処理方法およびプラズマ処理装置 |
| US11/002,903 US20050136576A1 (en) | 2003-12-09 | 2004-12-03 | Plasma treatment method and plasma treatment apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003409764A JP2005175028A (ja) | 2003-12-09 | 2003-12-09 | プラズマ処理方法およびプラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005175028A JP2005175028A (ja) | 2005-06-30 |
| JP2005175028A5 true JP2005175028A5 (cg-RX-API-DMAC7.html) | 2007-01-25 |
Family
ID=34674907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003409764A Withdrawn JP2005175028A (ja) | 2003-12-09 | 2003-12-09 | プラズマ処理方法およびプラズマ処理装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20050136576A1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2005175028A (cg-RX-API-DMAC7.html) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004140120A (ja) * | 2002-10-16 | 2004-05-13 | Canon Inc | 多結晶シリコン基板 |
| JP2004296598A (ja) * | 2003-03-26 | 2004-10-21 | Canon Inc | 太陽電池 |
| US7344996B1 (en) | 2005-06-22 | 2008-03-18 | Novellus Systems, Inc. | Helium-based etch process in deposition-etch-deposition gap fill |
| US7476621B1 (en) | 2003-12-10 | 2009-01-13 | Novellus Systems, Inc. | Halogen-free noble gas assisted H2 plasma etch process in deposition-etch-deposition gap fill |
| US7217658B1 (en) | 2004-09-07 | 2007-05-15 | Novellus Systems, Inc. | Process modulation to prevent structure erosion during gap fill |
| US7381451B1 (en) | 2004-11-17 | 2008-06-03 | Novellus Systems, Inc. | Strain engineering—HDP thin film with tensile stress for FEOL and other applications |
| US7211525B1 (en) * | 2005-03-16 | 2007-05-01 | Novellus Systems, Inc. | Hydrogen treatment enhanced gap fill |
| US7482245B1 (en) | 2006-06-20 | 2009-01-27 | Novellus Systems, Inc. | Stress profile modulation in STI gap fill |
| JP2008059991A (ja) * | 2006-09-01 | 2008-03-13 | Canon Inc | プラズマ処理装置及びプラズマ処理方法 |
| US8133797B2 (en) * | 2008-05-16 | 2012-03-13 | Novellus Systems, Inc. | Protective layer to enable damage free gap fill |
| US8487440B2 (en) * | 2010-07-09 | 2013-07-16 | Infineon Technologies Ag | Backside processing of semiconductor devices |
| US9553016B2 (en) | 2010-07-09 | 2017-01-24 | Infineon Technologies Ag | Contacts for semiconductor devices and methods of forming thereof |
| US8664729B2 (en) | 2011-12-14 | 2014-03-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for reduced gate resistance finFET |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5226967A (en) * | 1992-05-14 | 1993-07-13 | Lam Research Corporation | Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber |
| US5711998A (en) * | 1996-05-31 | 1998-01-27 | Lam Research Corporation | Method of polycrystalline silicon hydrogenation |
| US6153524A (en) * | 1997-07-29 | 2000-11-28 | Silicon Genesis Corporation | Cluster tool method using plasma immersion ion implantation |
| AU2002219966A1 (en) * | 2000-11-30 | 2002-06-11 | North Carolina State University | Methods and apparatus for producing m'n based materials |
| JP2002343993A (ja) * | 2001-03-15 | 2002-11-29 | Canon Inc | 薄膜多結晶太陽電池及びその形成方法 |
| DE10114764B4 (de) * | 2001-03-26 | 2005-08-11 | Infineon Technologies Ag | Verfahren zur Herstellung eines integrierten Schaltkreises mit einer dynamischen Speicherzellen-Anordnung (DRAM) mit einer langen Retention-Time |
| JP4799748B2 (ja) * | 2001-03-28 | 2011-10-26 | 忠弘 大見 | マイクロ波プラズマプロセス装置、プラズマ着火方法、プラズマ形成方法及びプラズマプロセス方法 |
| AU2002367179A1 (en) * | 2001-12-26 | 2003-07-15 | Tokyo Electron Limited | Substrate treating method and production method for semiconductor device |
| JP2004128060A (ja) * | 2002-09-30 | 2004-04-22 | Canon Inc | シリコン膜の成長方法、太陽電池の製造方法、半導体基板及び太陽電池 |
| US20050066881A1 (en) * | 2003-09-25 | 2005-03-31 | Canon Kabushiki Kaisha | Continuous production method for crystalline silicon and production apparatus for the same |
-
2003
- 2003-12-09 JP JP2003409764A patent/JP2005175028A/ja not_active Withdrawn
-
2004
- 2004-12-03 US US11/002,903 patent/US20050136576A1/en not_active Abandoned
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