JP2005150226A - 高周波信号伝送用光モジュール及びその製造方法 - Google Patents
高周波信号伝送用光モジュール及びその製造方法 Download PDFInfo
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- JP2005150226A JP2005150226A JP2003382540A JP2003382540A JP2005150226A JP 2005150226 A JP2005150226 A JP 2005150226A JP 2003382540 A JP2003382540 A JP 2003382540A JP 2003382540 A JP2003382540 A JP 2003382540A JP 2005150226 A JP2005150226 A JP 2005150226A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 100
- 238000004519 manufacturing process Methods 0.000 title description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 58
- 239000002184 metal Substances 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 238000003466 welding Methods 0.000 claims abstract description 16
- 238000005452 bending Methods 0.000 claims abstract description 11
- 230000008054 signal transmission Effects 0.000 claims description 97
- 230000005540 biological transmission Effects 0.000 abstract description 10
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
Abstract
【解決手段】 高周波信号伝送用光モジュール1では、半導体光デバイス2のステム3の裏面3aに直線状のアウターリード18の固定部19をレーザ溶接で固定した後、アウターリード18を折り曲げることで、半導体光デバイス2にアウターリード18を容易に取り付け得る。こうして、半導体光デバイス2の信号伝送ピンである各リードピン13a,13bの両側において、それらに沿って延在するアウターリード18がステム3の裏面3aに取り付けられているため、ステム3と各アウターリード18とによって各リードピン13a,13bの両側にグランド領域が連続し、TEM波伝送線路が形成される。従って、半導体光デバイス2に対して高周波信号を伝送し得る。
【選択図】 図2
Description
Claims (5)
- 半導体光素子をメタルキャンパッケージ内に収容し、前記メタルキャンパッケージのステムに形成された貫通孔から信号伝送ピンを突出させた半導体光デバイスと、
前記ステムの裏面に取り付けられ、前記信号伝送ピンの両側において前記信号伝送ピンに沿って延在するアウターリードとを備え、
前記アウターリードには、前記アウターリードの前記ステム側の端部が折り曲げられて、前記ステムの裏面に固定された固定部が設けられていることを特徴とする高周波信号伝送用光モジュール。 - 前記固定部は、レーザ溶接により前記ステムの裏面に固定されていることを特徴とする請求項1記載の高周波信号伝送用光モジュール。
- 前記アウターリードの少なくとも前記固定部は板状であることを特徴とする請求項1又は2記載の高周波信号伝送用光モジュール。
- 前記アウターリードの前記ステム側の端部が折り曲げられる部分には、折り曲げを容易にする弱化部が形成されていることを特徴とする請求項1〜3のいずれか一項記載の高周波信号伝送用光モジュール。
- 半導体光素子をメタルキャンパッケージ内に収容し、前記メタルキャンパッケージのステムに形成された貫通孔から信号伝送ピンを突出させた半導体光デバイスを用意し、
一端部を固定部とする直線状のアウターリードにおける前記固定部の側面が前記ステムの裏面の所定の位置に当接するように、前記信号伝送ピンの両側に前記アウターリードを配置して、前記所定の位置に前記固定部を固定する工程と、
前記信号伝送ピンの両側において前記信号伝送ピンに沿って延在するように、前記アウターリードのそれぞれを折り曲げる工程とを備えることを特徴とする高周波信号伝送用光モジュールの製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003382540A JP4002231B2 (ja) | 2003-11-12 | 2003-11-12 | 高周波信号伝送用光モジュール及びその製造方法 |
US10/984,748 US7226219B2 (en) | 2003-11-12 | 2004-11-10 | High-frequency signal transmitting optical module and method of fabricating the same |
PCT/JP2004/017119 WO2005048422A1 (en) | 2003-11-12 | 2004-11-11 | High-frequency signal transmitting optical module and method of fabricating the same |
CN2004800333273A CN1879268B (zh) | 2003-11-12 | 2004-11-11 | 高频信号传输光学模块及其制造方法 |
TW093134464A TWI362739B (en) | 2003-11-12 | 2004-11-11 | High-frequency signal transmitting optical module,method of fabricating the same,and electro-optical device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003382540A JP4002231B2 (ja) | 2003-11-12 | 2003-11-12 | 高周波信号伝送用光モジュール及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005150226A true JP2005150226A (ja) | 2005-06-09 |
JP4002231B2 JP4002231B2 (ja) | 2007-10-31 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2003382540A Expired - Fee Related JP4002231B2 (ja) | 2003-11-12 | 2003-11-12 | 高周波信号伝送用光モジュール及びその製造方法 |
Country Status (4)
Country | Link |
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JP (1) | JP4002231B2 (ja) |
CN (1) | CN1879268B (ja) |
TW (1) | TWI362739B (ja) |
WO (1) | WO2005048422A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008306033A (ja) * | 2007-06-08 | 2008-12-18 | Panasonic Corp | 光モジュール |
JP2009182251A (ja) * | 2008-01-31 | 2009-08-13 | Fujitsu Ltd | 光受信サブアセンブリおよび光受信モジュール |
JP2013149975A (ja) * | 2012-01-17 | 2013-08-01 | Fr De Detecteurs Infrarouges Sofradir:Soc | 封入パッケージを貫通する封止電気的フィードスルーを形成する方法及び少なくとも1つのこの電気的フィードスルーが設けられた封入パッケージ |
JP2020036008A (ja) * | 2018-08-27 | 2020-03-05 | ショット アクチエンゲゼルシャフトSchott AG | アース接続を備えるtoパッケージ |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4535453B2 (ja) | 2006-03-06 | 2010-09-01 | 株式会社小糸製作所 | 光源モジュール及び車輌用灯具 |
TWI464813B (zh) * | 2012-04-26 | 2014-12-11 | Nat Kaohsiung University Ofapplied Sciences | 對稱型電容補償式高速罐型光封裝模組 |
CN103986058A (zh) * | 2014-05-20 | 2014-08-13 | 深圳市易飞扬通信技术有限公司 | 垂直腔面发射激光器的罐形封装结构及方法 |
CN104124285B (zh) * | 2014-07-17 | 2016-05-04 | 武汉电信器件有限公司 | 采用多层陶瓷罐式封装的高频光电探测器封装底座 |
CN106298553A (zh) * | 2015-06-11 | 2017-01-04 | 台达电子企业管理(上海)有限公司 | 封装模组及其制作方法 |
WO2018134967A1 (ja) * | 2017-01-20 | 2018-07-26 | 三菱電機株式会社 | 光モジュール及びcanパッケージ |
CN110663147A (zh) * | 2018-04-28 | 2020-01-07 | 深圳市大疆创新科技有限公司 | 激光二极管封装模块及发射装置、测距装置、电子设备 |
Citations (6)
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US4309717A (en) * | 1979-07-16 | 1982-01-05 | Rca Corporation | Coaxially mounted high frequency light detector housing |
JPS59101882A (ja) * | 1982-12-03 | 1984-06-12 | Nec Corp | 光半導体装置 |
US4831723A (en) * | 1988-04-12 | 1989-05-23 | Kaufman Lance R | Direct bond circuit assembly with crimped lead frame |
JPH08114728A (ja) * | 1994-10-13 | 1996-05-07 | Sumitomo Electric Ind Ltd | 受光モジュ−ル及びその製造方法 |
JP2003229629A (ja) * | 2002-02-04 | 2003-08-15 | Opnext Japan Inc | 光モジュール |
JP2004235571A (ja) * | 2003-01-31 | 2004-08-19 | Hamamatsu Photonics Kk | 光モジュール |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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NL8801443A (nl) * | 1988-06-06 | 1990-01-02 | Koninkl Philips Electronics Nv | Opto-elektrische inrichting met een koppeling tussen een optische transmissievezel en een halfgeleiderlaserdiode. |
JP2590212B2 (ja) * | 1988-07-01 | 1997-03-12 | 株式会社日立製作所 | 回転角度検出装置 |
JPH11231173A (ja) * | 1998-02-12 | 1999-08-27 | Fujitsu Ltd | 高速動作可能な光デバイス |
CN2411624Y (zh) * | 2000-02-22 | 2000-12-20 | 汪中 | 高频模拟半导体激光模块 |
KR100322138B1 (ko) * | 2000-03-10 | 2004-09-07 | 삼성전자 주식회사 | 광통신 모듈 |
US6417747B1 (en) * | 2001-08-23 | 2002-07-09 | Raytheon Company | Low cost, large scale RF hybrid package for simple assembly onto mixed signal printed wiring boards |
JP4027105B2 (ja) * | 2002-02-04 | 2007-12-26 | 新光電気工業株式会社 | 光半導体装置用ステムおよびその製造方法 |
JP2003309312A (ja) * | 2002-04-15 | 2003-10-31 | Opnext Japan Inc | 光モジュール |
-
2003
- 2003-11-12 JP JP2003382540A patent/JP4002231B2/ja not_active Expired - Fee Related
-
2004
- 2004-11-11 CN CN2004800333273A patent/CN1879268B/zh not_active Expired - Fee Related
- 2004-11-11 WO PCT/JP2004/017119 patent/WO2005048422A1/en active Application Filing
- 2004-11-11 TW TW093134464A patent/TWI362739B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4309717A (en) * | 1979-07-16 | 1982-01-05 | Rca Corporation | Coaxially mounted high frequency light detector housing |
JPS59101882A (ja) * | 1982-12-03 | 1984-06-12 | Nec Corp | 光半導体装置 |
US4831723A (en) * | 1988-04-12 | 1989-05-23 | Kaufman Lance R | Direct bond circuit assembly with crimped lead frame |
JPH08114728A (ja) * | 1994-10-13 | 1996-05-07 | Sumitomo Electric Ind Ltd | 受光モジュ−ル及びその製造方法 |
JP2003229629A (ja) * | 2002-02-04 | 2003-08-15 | Opnext Japan Inc | 光モジュール |
JP2004235571A (ja) * | 2003-01-31 | 2004-08-19 | Hamamatsu Photonics Kk | 光モジュール |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008306033A (ja) * | 2007-06-08 | 2008-12-18 | Panasonic Corp | 光モジュール |
JP2009182251A (ja) * | 2008-01-31 | 2009-08-13 | Fujitsu Ltd | 光受信サブアセンブリおよび光受信モジュール |
JP2013149975A (ja) * | 2012-01-17 | 2013-08-01 | Fr De Detecteurs Infrarouges Sofradir:Soc | 封入パッケージを貫通する封止電気的フィードスルーを形成する方法及び少なくとも1つのこの電気的フィードスルーが設けられた封入パッケージ |
JP2020036008A (ja) * | 2018-08-27 | 2020-03-05 | ショット アクチエンゲゼルシャフトSchott AG | アース接続を備えるtoパッケージ |
Also Published As
Publication number | Publication date |
---|---|
WO2005048422A1 (en) | 2005-05-26 |
CN1879268A (zh) | 2006-12-13 |
TWI362739B (en) | 2012-04-21 |
JP4002231B2 (ja) | 2007-10-31 |
TW200524136A (en) | 2005-07-16 |
CN1879268B (zh) | 2011-12-28 |
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