JP2005135914A5 - - Google Patents
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- Publication number
- JP2005135914A5 JP2005135914A5 JP2004313474A JP2004313474A JP2005135914A5 JP 2005135914 A5 JP2005135914 A5 JP 2005135914A5 JP 2004313474 A JP2004313474 A JP 2004313474A JP 2004313474 A JP2004313474 A JP 2004313474A JP 2005135914 A5 JP2005135914 A5 JP 2005135914A5
- Authority
- JP
- Japan
- Prior art keywords
- bismuth
- source material
- metal
- bis
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims 15
- 238000000034 method Methods 0.000 claims 15
- 229910052751 metal Inorganic materials 0.000 claims 12
- 239000002184 metal Substances 0.000 claims 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 10
- 229910052797 bismuth Inorganic materials 0.000 claims 10
- 239000001301 oxygen Substances 0.000 claims 10
- 229910052760 oxygen Inorganic materials 0.000 claims 10
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 8
- 239000007983 Tris buffer Substances 0.000 claims 7
- 125000003368 amide group Chemical group 0.000 claims 7
- -1 bismuth (III) compound Chemical class 0.000 claims 6
- 239000010408 film Substances 0.000 claims 6
- 239000007789 gas Substances 0.000 claims 5
- 239000002243 precursor Substances 0.000 claims 5
- 239000010409 thin film Substances 0.000 claims 4
- 125000004665 trialkylsilyl group Chemical group 0.000 claims 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims 3
- 150000001622 bismuth compounds Chemical class 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- 239000003446 ligand Substances 0.000 claims 3
- 229910004247 CaCu Inorganic materials 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 2
- 150000001408 amides Chemical class 0.000 claims 2
- 238000000137 annealing Methods 0.000 claims 2
- 238000000231 atomic layer deposition Methods 0.000 claims 2
- 229910000416 bismuth oxide Inorganic materials 0.000 claims 2
- JDIBGQFKXXXXPN-UHFFFAOYSA-N bismuth(3+) Chemical compound [Bi+3] JDIBGQFKXXXXPN-UHFFFAOYSA-N 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims 2
- 150000004820 halides Chemical class 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
- 150000004703 alkoxides Chemical class 0.000 claims 1
- 125000003545 alkoxy group Chemical group 0.000 claims 1
- 125000003282 alkyl amino group Chemical group 0.000 claims 1
- 125000004432 carbon atom Chemical group C* 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 claims 1
- 150000004659 dithiocarbamates Chemical class 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 150000002902 organometallic compounds Chemical class 0.000 claims 1
- 150000002927 oxygen compounds Chemical class 0.000 claims 1
- 230000000737 periodic effect Effects 0.000 claims 1
- 150000004965 peroxy acids Chemical class 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 229910052723 transition metal Inorganic materials 0.000 claims 1
- 150000003624 transition metals Chemical class 0.000 claims 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 claims 1
- 239000003039 volatile agent Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 229910001868 water Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/696591 | 2003-10-28 | ||
| US10/696,591 US7618681B2 (en) | 2003-10-28 | 2003-10-28 | Process for producing bismuth-containing oxide films |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005135914A JP2005135914A (ja) | 2005-05-26 |
| JP2005135914A5 true JP2005135914A5 (https=) | 2007-10-18 |
| JP5231708B2 JP5231708B2 (ja) | 2013-07-10 |
Family
ID=34522903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004313474A Expired - Lifetime JP5231708B2 (ja) | 2003-10-28 | 2004-10-28 | 酸化膜の作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7618681B2 (https=) |
| JP (1) | JP5231708B2 (https=) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7494927B2 (en) * | 2000-05-15 | 2009-02-24 | Asm International N.V. | Method of growing electrical conductors |
| US7563715B2 (en) | 2005-12-05 | 2009-07-21 | Asm International N.V. | Method of producing thin films |
| US7491634B2 (en) * | 2006-04-28 | 2009-02-17 | Asm International N.V. | Methods for forming roughened surfaces and applications thereof |
| US9139906B2 (en) * | 2001-03-06 | 2015-09-22 | Asm America, Inc. | Doping with ALD technology |
| US8025922B2 (en) * | 2005-03-15 | 2011-09-27 | Asm International N.V. | Enhanced deposition of noble metals |
| US7666773B2 (en) | 2005-03-15 | 2010-02-23 | Asm International N.V. | Selective deposition of noble metal thin films |
| US20070014919A1 (en) * | 2005-07-15 | 2007-01-18 | Jani Hamalainen | Atomic layer deposition of noble metal oxides |
| US7713584B2 (en) * | 2005-12-22 | 2010-05-11 | Asm International N.V. | Process for producing oxide films |
| KR100763559B1 (ko) * | 2006-07-18 | 2007-10-04 | 삼성전자주식회사 | 강유전체막의 형성 방법 및 이를 이용한 강유전체캐패시터의 제조 방법 |
| US7435484B2 (en) * | 2006-09-01 | 2008-10-14 | Asm Japan K.K. | Ruthenium thin film-formed structure |
| US8795771B2 (en) | 2006-10-27 | 2014-08-05 | Sean T. Barry | ALD of metal-containing films using cyclopentadienyl compounds |
| US20080124484A1 (en) * | 2006-11-08 | 2008-05-29 | Asm Japan K.K. | Method of forming ru film and metal wiring structure |
| US20090035946A1 (en) * | 2007-07-31 | 2009-02-05 | Asm International N.V. | In situ deposition of different metal-containing films using cyclopentadienyl metal precursors |
| US20090087339A1 (en) * | 2007-09-28 | 2009-04-02 | Asm Japan K.K. | METHOD FOR FORMING RUTHENIUM COMPLEX FILM USING Beta-DIKETONE-COORDINATED RUTHENIUM PRECURSOR |
| KR101544198B1 (ko) | 2007-10-17 | 2015-08-12 | 한국에이에스엠지니텍 주식회사 | 루테늄 막 형성 방법 |
| US7655564B2 (en) * | 2007-12-12 | 2010-02-02 | Asm Japan, K.K. | Method for forming Ta-Ru liner layer for Cu wiring |
| KR20090067505A (ko) * | 2007-12-21 | 2009-06-25 | 에이에스엠지니텍코리아 주식회사 | 루테늄막 증착 방법 |
| US7799674B2 (en) * | 2008-02-19 | 2010-09-21 | Asm Japan K.K. | Ruthenium alloy film for copper interconnects |
| US8545936B2 (en) | 2008-03-28 | 2013-10-01 | Asm International N.V. | Methods for forming carbon nanotubes |
| US8383525B2 (en) * | 2008-04-25 | 2013-02-26 | Asm America, Inc. | Plasma-enhanced deposition process for forming a metal oxide thin film and related structures |
| US8084104B2 (en) * | 2008-08-29 | 2011-12-27 | Asm Japan K.K. | Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition |
| US8133555B2 (en) | 2008-10-14 | 2012-03-13 | Asm Japan K.K. | Method for forming metal film by ALD using beta-diketone metal complex |
| US20100136313A1 (en) * | 2008-12-01 | 2010-06-03 | Asm Japan K.K. | Process for forming high resistivity thin metallic film |
| US9379011B2 (en) | 2008-12-19 | 2016-06-28 | Asm International N.V. | Methods for depositing nickel films and for making nickel silicide and nickel germanide |
| JP2010192520A (ja) | 2009-02-16 | 2010-09-02 | Elpida Memory Inc | 半導体装置の製造方法 |
| US20110020546A1 (en) * | 2009-05-15 | 2011-01-27 | Asm International N.V. | Low Temperature ALD of Noble Metals |
| US8329569B2 (en) * | 2009-07-31 | 2012-12-11 | Asm America, Inc. | Deposition of ruthenium or ruthenium dioxide |
| US20110293830A1 (en) | 2010-02-25 | 2011-12-01 | Timo Hatanpaa | Precursors and methods for atomic layer deposition of transition metal oxides |
| US8871617B2 (en) | 2011-04-22 | 2014-10-28 | Asm Ip Holding B.V. | Deposition and reduction of mixed metal oxide thin films |
| CN102776486A (zh) * | 2012-08-07 | 2012-11-14 | 中国科学院半导体研究所 | BiFeO3薄膜的原子层沉积方法 |
| JP6536105B2 (ja) * | 2015-03-17 | 2019-07-03 | 凸版印刷株式会社 | 積層体及びその製造方法、並びにガスバリアフィルム及びその製造方法 |
| US9607842B1 (en) | 2015-10-02 | 2017-03-28 | Asm Ip Holding B.V. | Methods of forming metal silicides |
| US12359315B2 (en) | 2019-02-14 | 2025-07-15 | Asm Ip Holding B.V. | Deposition of oxides and nitrides |
| KR102953798B1 (ko) | 2020-06-24 | 2026-04-15 | 에이에스엠 아이피 홀딩 비.브이. | 몰리브덴을 포함하는 막의 기상 증착 |
| CN118382628A (zh) | 2021-12-21 | 2024-07-23 | 弗萨姆材料美国有限责任公司 | 用于沉积含氧化铋薄膜的均配物铋前体 |
| US20250051378A1 (en) | 2021-12-21 | 2025-02-13 | Versum Materials Us, Llc | Alkyl And Aryl Heteroleptic Bismuth Precursors For Bismuth Oxide Containing Thin Films |
| CN121752753A (zh) | 2023-08-28 | 2026-03-27 | 株式会社Adeka | 薄膜的制造方法和薄膜形成用原料 |
| KR20250152024A (ko) | 2024-04-15 | 2025-10-22 | 주식회사 유피케미칼 | 비스무스 전구체 화합물, 이의 제조방법, 및 이를 이용한 비스무스-함유 막의 형성 방법 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2970676B2 (ja) * | 1990-02-20 | 1999-11-02 | 富士通株式会社 | 酸化物結晶薄膜の成長方法 |
| JPH0586477A (ja) * | 1991-09-27 | 1993-04-06 | Tdk Corp | ペロブスカイト型酸化物超薄膜の製造方法 |
| JP3618110B2 (ja) | 1993-08-30 | 2005-02-09 | 株式会社デンソー | エレクトロルミネッセンス素子の製法 |
| US5902639A (en) * | 1997-03-31 | 1999-05-11 | Advanced Technology Materials, Inc | Method of forming bismuth-containing films by using bismuth amide compounds |
| US6177135B1 (en) * | 1997-03-31 | 2001-01-23 | Advanced Technology Materials, Inc. | Low temperature CVD processes for preparing ferroelectric films using Bi amides |
| US5972430A (en) | 1997-11-26 | 1999-10-26 | Advanced Technology Materials, Inc. | Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer |
| JP3950290B2 (ja) * | 1999-09-10 | 2007-07-25 | 三星電子株式会社 | キャパシタ保護膜を含む半導体メモリ素子及びその製造方法 |
| US6537613B1 (en) | 2000-04-10 | 2003-03-25 | Air Products And Chemicals, Inc. | Process for metal metalloid oxides and nitrides with compositional gradients |
| US6849305B2 (en) | 2000-04-28 | 2005-02-01 | Ekc Technology, Inc. | Photolytic conversion process to form patterned amorphous film |
| US6969539B2 (en) | 2000-09-28 | 2005-11-29 | President And Fellows Of Harvard College | Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide |
| US6660660B2 (en) * | 2000-10-10 | 2003-12-09 | Asm International, Nv. | Methods for making a dielectric stack in an integrated circuit |
| KR100531419B1 (ko) * | 2001-06-12 | 2005-11-28 | 주식회사 하이닉스반도체 | 반도체소자 및 그의 제조방법 |
| US6420279B1 (en) * | 2001-06-28 | 2002-07-16 | Sharp Laboratories Of America, Inc. | Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate |
| KR100444304B1 (ko) * | 2001-12-31 | 2004-08-16 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 형성방법 |
| US7045430B2 (en) | 2002-05-02 | 2006-05-16 | Micron Technology Inc. | Atomic layer-deposited LaAlO3 films for gate dielectrics |
| KR100723399B1 (ko) * | 2002-08-06 | 2007-05-30 | 삼성전자주식회사 | 비스무트 티타늄 실리콘 산화물, 비스무트 티타늄 실리콘산화물 박막 및 그 제조방법 |
| TW200408015A (en) | 2002-08-18 | 2004-05-16 | Asml Us Inc | Atomic layer deposition of high K metal silicates |
-
2003
- 2003-10-28 US US10/696,591 patent/US7618681B2/en not_active Expired - Lifetime
-
2004
- 2004-10-28 JP JP2004313474A patent/JP5231708B2/ja not_active Expired - Lifetime
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