JP5231708B2 - 酸化膜の作製方法 - Google Patents

酸化膜の作製方法 Download PDF

Info

Publication number
JP5231708B2
JP5231708B2 JP2004313474A JP2004313474A JP5231708B2 JP 5231708 B2 JP5231708 B2 JP 5231708B2 JP 2004313474 A JP2004313474 A JP 2004313474A JP 2004313474 A JP2004313474 A JP 2004313474A JP 5231708 B2 JP5231708 B2 JP 5231708B2
Authority
JP
Japan
Prior art keywords
bismuth
source material
oxide
bis
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2004313474A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005135914A5 (https=
JP2005135914A (ja
Inventor
ヴェヘカメキ マルコ
ハタンペー ティモ
リタラ ミッコ
レスケレ マルック
Original Assignee
エイエスエム インターナショナル エヌ．ヴェー．
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エイエスエム インターナショナル エヌ．ヴェー． filed Critical エイエスエム インターナショナル エヌ．ヴェー．
Publication of JP2005135914A publication Critical patent/JP2005135914A/ja
Publication of JP2005135914A5 publication Critical patent/JP2005135914A5/ja
Application granted granted Critical
Publication of JP5231708B2 publication Critical patent/JP5231708B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/94—Bismuth compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Inorganic Insulating Materials (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
JP2004313474A 2003-10-28 2004-10-28 酸化膜の作製方法 Expired - Lifetime JP5231708B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/696591 2003-10-28
US10/696,591 US7618681B2 (en) 2003-10-28 2003-10-28 Process for producing bismuth-containing oxide films

Publications (3)

Publication Number Publication Date
JP2005135914A JP2005135914A (ja) 2005-05-26
JP2005135914A5 JP2005135914A5 (https=) 2007-10-18
JP5231708B2 true JP5231708B2 (ja) 2013-07-10

Family

ID=34522903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004313474A Expired - Lifetime JP5231708B2 (ja) 2003-10-28 2004-10-28 酸化膜の作製方法

Country Status (2)

Country Link
US (1) US7618681B2 (https=)
JP (1) JP5231708B2 (https=)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7494927B2 (en) * 2000-05-15 2009-02-24 Asm International N.V. Method of growing electrical conductors
US7563715B2 (en) 2005-12-05 2009-07-21 Asm International N.V. Method of producing thin films
US7491634B2 (en) * 2006-04-28 2009-02-17 Asm International N.V. Methods for forming roughened surfaces and applications thereof
US9139906B2 (en) * 2001-03-06 2015-09-22 Asm America, Inc. Doping with ALD technology
US8025922B2 (en) * 2005-03-15 2011-09-27 Asm International N.V. Enhanced deposition of noble metals
US7666773B2 (en) 2005-03-15 2010-02-23 Asm International N.V. Selective deposition of noble metal thin films
US20070014919A1 (en) * 2005-07-15 2007-01-18 Jani Hamalainen Atomic layer deposition of noble metal oxides
US7713584B2 (en) * 2005-12-22 2010-05-11 Asm International N.V. Process for producing oxide films
KR100763559B1 (ko) * 2006-07-18 2007-10-04 삼성전자주식회사 강유전체막의 형성 방법 및 이를 이용한 강유전체캐패시터의 제조 방법
US7435484B2 (en) * 2006-09-01 2008-10-14 Asm Japan K.K. Ruthenium thin film-formed structure
US8795771B2 (en) 2006-10-27 2014-08-05 Sean T. Barry ALD of metal-containing films using cyclopentadienyl compounds
US20080124484A1 (en) * 2006-11-08 2008-05-29 Asm Japan K.K. Method of forming ru film and metal wiring structure
US20090035946A1 (en) * 2007-07-31 2009-02-05 Asm International N.V. In situ deposition of different metal-containing films using cyclopentadienyl metal precursors
US20090087339A1 (en) * 2007-09-28 2009-04-02 Asm Japan K.K. METHOD FOR FORMING RUTHENIUM COMPLEX FILM USING Beta-DIKETONE-COORDINATED RUTHENIUM PRECURSOR
KR101544198B1 (ko) 2007-10-17 2015-08-12 한국에이에스엠지니텍 주식회사 루테늄 막 형성 방법
US7655564B2 (en) * 2007-12-12 2010-02-02 Asm Japan, K.K. Method for forming Ta-Ru liner layer for Cu wiring
KR20090067505A (ko) * 2007-12-21 2009-06-25 에이에스엠지니텍코리아 주식회사 루테늄막 증착 방법
US7799674B2 (en) * 2008-02-19 2010-09-21 Asm Japan K.K. Ruthenium alloy film for copper interconnects
US8545936B2 (en) 2008-03-28 2013-10-01 Asm International N.V. Methods for forming carbon nanotubes
US8383525B2 (en) * 2008-04-25 2013-02-26 Asm America, Inc. Plasma-enhanced deposition process for forming a metal oxide thin film and related structures
US8084104B2 (en) * 2008-08-29 2011-12-27 Asm Japan K.K. Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
US8133555B2 (en) 2008-10-14 2012-03-13 Asm Japan K.K. Method for forming metal film by ALD using beta-diketone metal complex
US20100136313A1 (en) * 2008-12-01 2010-06-03 Asm Japan K.K. Process for forming high resistivity thin metallic film
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
JP2010192520A (ja) 2009-02-16 2010-09-02 Elpida Memory Inc 半導体装置の製造方法
US20110020546A1 (en) * 2009-05-15 2011-01-27 Asm International N.V. Low Temperature ALD of Noble Metals
US8329569B2 (en) * 2009-07-31 2012-12-11 Asm America, Inc. Deposition of ruthenium or ruthenium dioxide
US20110293830A1 (en) 2010-02-25 2011-12-01 Timo Hatanpaa Precursors and methods for atomic layer deposition of transition metal oxides
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
CN102776486A (zh) * 2012-08-07 2012-11-14 中国科学院半导体研究所 BiFeO3薄膜的原子层沉积方法
JP6536105B2 (ja) * 2015-03-17 2019-07-03 凸版印刷株式会社 積層体及びその製造方法、並びにガスバリアフィルム及びその製造方法
US9607842B1 (en) 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
US12359315B2 (en) 2019-02-14 2025-07-15 Asm Ip Holding B.V. Deposition of oxides and nitrides
KR102953798B1 (ko) 2020-06-24 2026-04-15 에이에스엠 아이피 홀딩 비.브이. 몰리브덴을 포함하는 막의 기상 증착
CN118382628A (zh) 2021-12-21 2024-07-23 弗萨姆材料美国有限责任公司 用于沉积含氧化铋薄膜的均配物铋前体
US20250051378A1 (en) 2021-12-21 2025-02-13 Versum Materials Us, Llc Alkyl And Aryl Heteroleptic Bismuth Precursors For Bismuth Oxide Containing Thin Films
CN121752753A (zh) 2023-08-28 2026-03-27 株式会社Adeka 薄膜的制造方法和薄膜形成用原料
KR20250152024A (ko) 2024-04-15 2025-10-22 주식회사 유피케미칼 비스무스 전구체 화합물, 이의 제조방법, 및 이를 이용한 비스무스-함유 막의 형성 방법

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2970676B2 (ja) * 1990-02-20 1999-11-02 富士通株式会社 酸化物結晶薄膜の成長方法
JPH0586477A (ja) * 1991-09-27 1993-04-06 Tdk Corp ペロブスカイト型酸化物超薄膜の製造方法
JP3618110B2 (ja) 1993-08-30 2005-02-09 株式会社デンソー エレクトロルミネッセンス素子の製法
US5902639A (en) * 1997-03-31 1999-05-11 Advanced Technology Materials, Inc Method of forming bismuth-containing films by using bismuth amide compounds
US6177135B1 (en) * 1997-03-31 2001-01-23 Advanced Technology Materials, Inc. Low temperature CVD processes for preparing ferroelectric films using Bi amides
US5972430A (en) 1997-11-26 1999-10-26 Advanced Technology Materials, Inc. Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer
JP3950290B2 (ja) * 1999-09-10 2007-07-25 三星電子株式会社 キャパシタ保護膜を含む半導体メモリ素子及びその製造方法
US6537613B1 (en) 2000-04-10 2003-03-25 Air Products And Chemicals, Inc. Process for metal metalloid oxides and nitrides with compositional gradients
US6849305B2 (en) 2000-04-28 2005-02-01 Ekc Technology, Inc. Photolytic conversion process to form patterned amorphous film
US6969539B2 (en) 2000-09-28 2005-11-29 President And Fellows Of Harvard College Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide
US6660660B2 (en) * 2000-10-10 2003-12-09 Asm International, Nv. Methods for making a dielectric stack in an integrated circuit
KR100531419B1 (ko) * 2001-06-12 2005-11-28 주식회사 하이닉스반도체 반도체소자 및 그의 제조방법
US6420279B1 (en) * 2001-06-28 2002-07-16 Sharp Laboratories Of America, Inc. Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate
KR100444304B1 (ko) * 2001-12-31 2004-08-16 주식회사 하이닉스반도체 반도체소자의 캐패시터 형성방법
US7045430B2 (en) 2002-05-02 2006-05-16 Micron Technology Inc. Atomic layer-deposited LaAlO3 films for gate dielectrics
KR100723399B1 (ko) * 2002-08-06 2007-05-30 삼성전자주식회사 비스무트 티타늄 실리콘 산화물, 비스무트 티타늄 실리콘산화물 박막 및 그 제조방법
TW200408015A (en) 2002-08-18 2004-05-16 Asml Us Inc Atomic layer deposition of high K metal silicates

Also Published As

Publication number Publication date
US20050089632A1 (en) 2005-04-28
JP2005135914A (ja) 2005-05-26
US7618681B2 (en) 2009-11-17

Similar Documents

Publication Publication Date Title
JP5231708B2 (ja) 酸化膜の作製方法
US11155919B2 (en) ALD of metal-containing films using cyclopentadienyl compounds
US9169557B2 (en) Process for producing oxide films
KR102134200B1 (ko) 아미도이민 리간드를 포함하는 금속 착물
US8685165B2 (en) Metal oxide films
US8017184B2 (en) β-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same
KR101749783B1 (ko) 증착용 티타늄 함유 전구체
EP1907354B1 (en) Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same
JP2011529135A (ja) 遷移金属含有膜の堆積のためのヘテロレプティック（ｈｅｔｅｒｏｌｅｐｔｉｃ）シクロペンタジエニル遷移金属前駆体
TW202337892A (zh) 用於含鉍氧化物薄膜的烷基及芳基異配位鉍前驅物
JP7625599B2 (ja) 金属含有膜を選択的に形成するための化合物および方法
EP2468755A1 (en) Novel barium precursors for vapor phase deposition of thin films
EP2468757A1 (en) Novel diazacrown barium precursors for vapor phase deposition of thin films
EP2468754A1 (en) Novel diazacrown barium and strontium precursors for vapor phase deposition of thin film
EP2468753A1 (en) Strontium precursors for vapor phase deposition of thin films
EP2468756A1 (en) Novel diazacrown strontium precursors for vapor phase deposition of thin films

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070831

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070831

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100802

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20101102

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20101108

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20101202

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20101207

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20101228

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110106

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110202

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111214

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120314

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120604

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120904

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120907

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121204

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130129

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130201

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130221

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130322

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160329

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 5231708

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term