JP2005129916A - ビームホモジナイザ、レーザ照射装置、半導体装置の作製方法 - Google Patents
ビームホモジナイザ、レーザ照射装置、半導体装置の作製方法 Download PDFInfo
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- JP2005129916A JP2005129916A JP2004282947A JP2004282947A JP2005129916A JP 2005129916 A JP2005129916 A JP 2005129916A JP 2004282947 A JP2004282947 A JP 2004282947A JP 2004282947 A JP2004282947 A JP 2004282947A JP 2005129916 A JP2005129916 A JP 2005129916A
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- 239000004065 semiconductor Substances 0.000 title claims description 66
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 230000003287 optical effect Effects 0.000 claims abstract description 255
- 238000009826 distribution Methods 0.000 claims abstract description 105
- 238000000034 method Methods 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 25
- 239000013078 crystal Substances 0.000 claims description 24
- 238000005224 laser annealing Methods 0.000 claims description 20
- 239000011521 glass Substances 0.000 claims description 12
- 230000008859 change Effects 0.000 abstract description 3
- 238000012423 maintenance Methods 0.000 abstract description 3
- 238000002347 injection Methods 0.000 abstract 3
- 239000007924 injection Substances 0.000 abstract 3
- 239000000243 solution Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 13
- 239000010453 quartz Substances 0.000 description 12
- 238000002834 transmittance Methods 0.000 description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000013041 optical simulation Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 230000000644 propagated effect Effects 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
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- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004282947A JP2005129916A (ja) | 2003-09-30 | 2004-09-29 | ビームホモジナイザ、レーザ照射装置、半導体装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003341383 | 2003-09-30 | ||
| JP2004282947A JP2005129916A (ja) | 2003-09-30 | 2004-09-29 | ビームホモジナイザ、レーザ照射装置、半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005129916A true JP2005129916A (ja) | 2005-05-19 |
| JP2005129916A5 JP2005129916A5 (https=) | 2007-11-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004282947A Withdrawn JP2005129916A (ja) | 2003-09-30 | 2004-09-29 | ビームホモジナイザ、レーザ照射装置、半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005129916A (https=) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007194605A (ja) * | 2005-12-20 | 2007-08-02 | Semiconductor Energy Lab Co Ltd | レーザ照射装置、及び半導体装置の作製方法 |
| JP2008091811A (ja) * | 2006-10-05 | 2008-04-17 | Ihi Corp | レーザアニール方法及びレーザアニール装置 |
| JP2009016541A (ja) * | 2007-07-04 | 2009-01-22 | Semiconductor Energy Lab Co Ltd | レーザアニール装置及びレーザアニール方法 |
| JP2010507112A (ja) * | 2006-10-18 | 2010-03-04 | パンチ グラフィックス プレプレス ジャーマニー ゲーエムベーハー | 照明装置 |
| US8525070B2 (en) | 2005-12-20 | 2013-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5848013A (ja) * | 1981-09-18 | 1983-03-19 | Toshiba Corp | レ−ザ装置 |
| JPH09160034A (ja) * | 1995-12-14 | 1997-06-20 | Casio Comput Co Ltd | 液晶プロジェクタ |
| JP2001007045A (ja) * | 1999-06-25 | 2001-01-12 | Mitsubishi Electric Corp | レーザ熱処理用光学系およびレーザ熱処理装置 |
| JP2002141302A (ja) * | 2000-11-02 | 2002-05-17 | Mitsubishi Electric Corp | レーザアニーリング用レーザ光学系とこれを用いたレーザアニーリング装置 |
| JP2003211280A (ja) * | 2002-01-21 | 2003-07-29 | Nippon Sheet Glass Co Ltd | レーザ発生装置、レーザ発生方法およびレーザを用いた加工方法 |
| JP2003218054A (ja) * | 2002-01-21 | 2003-07-31 | Sumitomo Heavy Ind Ltd | レーザビーム長尺化装置 |
-
2004
- 2004-09-29 JP JP2004282947A patent/JP2005129916A/ja not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5848013A (ja) * | 1981-09-18 | 1983-03-19 | Toshiba Corp | レ−ザ装置 |
| JPH09160034A (ja) * | 1995-12-14 | 1997-06-20 | Casio Comput Co Ltd | 液晶プロジェクタ |
| JP2001007045A (ja) * | 1999-06-25 | 2001-01-12 | Mitsubishi Electric Corp | レーザ熱処理用光学系およびレーザ熱処理装置 |
| JP2002141302A (ja) * | 2000-11-02 | 2002-05-17 | Mitsubishi Electric Corp | レーザアニーリング用レーザ光学系とこれを用いたレーザアニーリング装置 |
| JP2003211280A (ja) * | 2002-01-21 | 2003-07-29 | Nippon Sheet Glass Co Ltd | レーザ発生装置、レーザ発生方法およびレーザを用いた加工方法 |
| JP2003218054A (ja) * | 2002-01-21 | 2003-07-31 | Sumitomo Heavy Ind Ltd | レーザビーム長尺化装置 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007194605A (ja) * | 2005-12-20 | 2007-08-02 | Semiconductor Energy Lab Co Ltd | レーザ照射装置、及び半導体装置の作製方法 |
| US8525070B2 (en) | 2005-12-20 | 2013-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device |
| JP2008091811A (ja) * | 2006-10-05 | 2008-04-17 | Ihi Corp | レーザアニール方法及びレーザアニール装置 |
| JP2010507112A (ja) * | 2006-10-18 | 2010-03-04 | パンチ グラフィックス プレプレス ジャーマニー ゲーエムベーハー | 照明装置 |
| JP2009016541A (ja) * | 2007-07-04 | 2009-01-22 | Semiconductor Energy Lab Co Ltd | レーザアニール装置及びレーザアニール方法 |
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