JP2005123400A - Circuit board and method of manufacturing the same - Google Patents

Circuit board and method of manufacturing the same Download PDF

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JP2005123400A
JP2005123400A JP2003356634A JP2003356634A JP2005123400A JP 2005123400 A JP2005123400 A JP 2005123400A JP 2003356634 A JP2003356634 A JP 2003356634A JP 2003356634 A JP2003356634 A JP 2003356634A JP 2005123400 A JP2005123400 A JP 2005123400A
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hole
diameter
circuit board
layer
conductor layer
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Kazuhiko Namatame
和彦 生田目
Yoshiaki Tsubomatsu
良明 坪松
Akihiko Wakabayashi
昭彦 若林
Tadashi Tamura
匡史 田村
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Showa Denko Materials Co Ltd
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Hitachi Chemical Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a circuit board which does not require any plated metal for covering a through hole filled up with an insulating resin and on which a minute circuit can be formed, and to provide a method of manufacturing the circuit board. <P>SOLUTION: The circuit board comprises an internal board provided with a plated through hole having an inside diameter of ΦI, an internal conductor layer provided in the opening of the through hole of the internal board and having a diameter of ΦL, and an insulating resin layer formed on the surface of the internal conductor layer. The circuit board also comprises a non-through hole which is formed in the insulating resin layer to reach the internal conductor layer immediately above the through hole formed in the internal board and has an opened diameter of ΦO. This circuit board has one or more connecting hole structures in which the through hole having the inside diameter of ΦI, the internal conductor layer having the diameter of ΦL, and the non-through hole having the opened diameter of ΦO are formed by adjusting a relation among the diameters ΦI, ΦL, and ΦO to ΦI<ΦO<ΦL. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、回路基板及び回路基板の製造方法に関する。   The present invention relates to a circuit board and a method for manufacturing the circuit board.

近年の電子機器の小型化・高機能化の進展とともに、薄型化や高密度配線に対応したビルドアップ回路基板の開発が求められている。ビルドアップ回路基板は、層間接続が必要な回路層のみ、非貫通孔で接続することが可能なため、内層板の貫通孔のみで、回路基板全体を貫通する孔は、必ずしも必要とせず、回路基板の薄型化や小型化に適しており、近年開発が進められている。   With the recent progress in downsizing and high functionality of electronic devices, development of build-up circuit boards corresponding to thinning and high density wiring is required. Since the build-up circuit board can be connected only with the circuit layer that requires interlayer connection with a non-through hole, only the through hole of the inner layer plate and the hole that penetrates the entire circuit board are not necessarily required. It is suitable for thinning and miniaturization of substrates, and has been developed in recent years.

そして、ビルドアップ回路基板において、貫通孔を有する内層板にビルドアップ層を形成する場合、非貫通孔は、配線の効率化及び高密度化の観点から、貫通孔の直上に形成することが多くなっている。3層以上の導体層を有するビルドアップ回路基板において、内層板の貫通孔の直上に外層の非貫通孔を形成する場合、無電解あるいは電解金属めっきを施した内層板の貫通孔を導電材で充填するか、もしくは導電材あるいは絶縁樹脂で貫通孔を充填後、貫通孔を覆うように金属めっきを施すことが必要である(例えば、特許文献1参照)。
特開2003−133727号公報
In the build-up circuit board, when the build-up layer is formed on the inner layer plate having the through hole, the non-through hole is often formed immediately above the through hole from the viewpoint of increasing the efficiency of wiring and increasing the density. It has become. In a build-up circuit board having three or more conductor layers, when the non-through hole of the outer layer is formed immediately above the through hole of the inner layer board, the through hole of the inner layer board subjected to electroless or electrolytic metal plating is made of a conductive material. After filling the through hole with a conductive material or insulating resin, it is necessary to perform metal plating so as to cover the through hole (for example, see Patent Document 1).
JP 2003-133727 A

ビルドアップ回路基板の内層板の貫通孔を導電材9で充填する場合、貫通孔を覆うように金属めっきを施すことが、必ずしも必要ではない(図2(b)参照)。しかし、導電材は、導電粒子を含んでいるため、絶縁樹脂と比較し、ペースト状態で極めて粘度が高く、小径の貫通孔や高アスペクト比の貫通孔の充填は、困難である。また、貫通孔を導電材で充填できた場合においても、導電材は硬化した状態で、硬度が、絶縁樹脂と比較し、大きいため、貫通孔から突出した導電材が多い時は、研磨等で、完全に除去することは、内層板表面の銅層を深く削り取る恐れもあり、困難である。そして、研磨残りがあった場合などは、回路形成不良の原因ともなる。   When filling the through hole of the inner layer plate of the build-up circuit board with the conductive material 9, it is not always necessary to perform metal plating so as to cover the through hole (see FIG. 2B). However, since the conductive material contains conductive particles, it has a very high viscosity in a paste state as compared with the insulating resin, and it is difficult to fill a small diameter through hole or a high aspect ratio through hole. In addition, even when the through hole can be filled with a conductive material, the conductive material is in a cured state and the hardness is larger than that of the insulating resin. It is difficult to completely remove the copper layer on the surface of the inner layer plate because it may be deeply scraped off. In addition, when there is a polishing residue, it may cause defective circuit formation.

非貫通孔を貫通孔の直上に形成する場合、ビルドアップ回路基板の内層板の貫通孔を絶縁樹脂8で充填した時、貫通孔を覆うように金属めっきを施すことが、接続信頼性の確保の点から必要である。特に、貫通孔の直径が、その直上に形成する非貫通孔の直径より、大きい場合は、必須である(図2(a)参照)。そして、内層の導体層の厚みは、一般的に、下地銅層、貫通孔の銅めっき、さらに貫通孔を覆う銅めっきの厚みが重なり、微細な回路を形成するには不利になる。   When the non-through hole is formed immediately above the through hole, when the through hole of the inner layer plate of the build-up circuit board is filled with the insulating resin 8, metal plating is performed so as to cover the through hole, ensuring connection reliability. It is necessary from the point of. In particular, it is essential when the diameter of the through hole is larger than the diameter of the non-through hole formed immediately above (see FIG. 2A). In general, the thickness of the inner conductor layer is disadvantageous for forming a fine circuit because the base copper layer, the copper plating of the through hole, and the copper plating covering the through hole overlap.

本発明は、絶縁樹脂により充填された貫通孔を覆う金属めっきを不要とし、微細な回路形成に可能とする回路基板及びその製造方法を提供するものである。   The present invention provides a circuit board that eliminates the need for metal plating that covers a through-hole filled with an insulating resin and enables formation of a fine circuit, and a method for manufacturing the circuit board.

本発明は、以下のことを特徴とする。
(1)めっきを施した内壁径ΦIの貫通孔を有する内層板と、前記内層板の貫通孔の開口部に設けられた径ΦLの内層導体層と、前記内層導体層表面に形成された絶縁樹脂層と、前記絶縁樹脂層に形成された前記貫通孔の直上に位置する開口径ΦOの内層導体層に達する非貫通孔とを有する回路基板において、内壁径ΦIの貫通孔と径ΦLの内層導体層と開口径ΦOの非貫通孔が、ΦI<ΦO<ΦLとなる関係を持つ接続孔構造を1つ以上有する回路基板。
(2)めっきを施した内壁径ΦIが、Φ0.001〜0.09mmである(1)に記載の回路基板。
(3)内層導体層の厚みが、1μm〜20μmである(1)又は(2)に記載の回路基板。
(4)めっきを施した内壁径ΦIの貫通孔を有する内層板を準備する工程、前記内層板の貫通孔の開口部に径ΦIより大きな径ΦLの導体層を形成する工程、ΦLの導体層を含む導体層表面に絶縁樹脂層を形成する工程、前記貫通孔の直上に径ΦIより大きくかつ径ΦLより小さな開口径ΦOの内層導体層に達する非貫通孔を前記絶縁樹脂層に少なくとも1つ以上形成する工程を含む回路基板の製造方法。
(5)ΦLの導体層を含む導体層表面に絶縁樹脂層を形成する工程が、貫通孔を絶縁樹脂で埋め込む工程を含む(4)に記載の回路基板の製造方法。
The present invention is characterized by the following.
(1) A plated inner wall plate having a through hole with an inner wall diameter of ΦI, an inner layer conductor layer with a diameter of ΦL provided in an opening of the through hole of the inner layer plate, and insulation formed on the surface of the inner layer conductor layer In a circuit board having a resin layer and a non-through hole reaching an inner layer conductor layer having an opening diameter ΦO located immediately above the through hole formed in the insulating resin layer, a through hole having an inner wall diameter ΦI and an inner layer having a diameter ΦL A circuit board having at least one connection hole structure in which a conductor layer and a non-through hole having an opening diameter of ΦO have a relationship of ΦI <ΦO <ΦL.
(2) The circuit board according to (1), wherein the plated inner wall diameter ΦI is Φ0.001 to 0.09 mm.
(3) The circuit board according to (1) or (2), wherein the inner conductor layer has a thickness of 1 μm to 20 μm.
(4) preparing a plated inner wall plate having a through hole with an inner wall diameter ΦI, forming a conductor layer with a diameter ΦL larger than the diameter ΦI at the opening of the through hole of the inner layer plate, a conductor layer with ΦL Forming an insulating resin layer on the surface of the conductor layer containing at least one non-through hole in the insulating resin layer that reaches the inner conductor layer having an opening diameter ΦO larger than the diameter ΦI and smaller than the diameter ΦL immediately above the through hole. A method of manufacturing a circuit board including the steps of forming as described above.
(5) The method for manufacturing a circuit board according to (4), wherein the step of forming the insulating resin layer on the surface of the conductor layer including the conductor layer of ΦL includes a step of filling the through hole with the insulating resin.

本発明によって、微細な回路形成に対応する回路基板及びその製造方法を提供することができる。そして、開口径ΦOの非貫通孔は、ΦI<ΦO<ΦLとなる関係を有しているため、貫通孔の直上に非貫通孔を形成しても、絶縁樹脂により充填された貫通孔を覆う金属めっきは不要となり、それにより、内層導体層の厚みを20μm以下にすることが、可能となり、よって、内層導体層においてライン/スペース=40/40μmレベル以下の微細配線の形成が効率良くできる。   According to the present invention, it is possible to provide a circuit board corresponding to fine circuit formation and a manufacturing method thereof. Since the non-through hole with the opening diameter ΦO has a relationship of ΦI <ΦO <ΦL, even if the non-through hole is formed immediately above the through hole, the through hole filled with the insulating resin is covered. Metal plating is not required, whereby the thickness of the inner conductor layer can be reduced to 20 μm or less, and therefore, fine wiring with a line / space = 40/40 μm level or less can be efficiently formed in the inner conductor layer.

本発明に示した回路基板において、内層板18に形成された内壁径ΦI5の貫通孔2と、径ΦL6の内層導体層1と、絶縁樹脂層7に形成された開口径ΦO4の非貫通孔14が、ΦI<ΦO<ΦLとなる関係を持つ接続孔構造を1つ以上有している(図1の(a)参照)。尚、本発明の内壁径ΦI5の貫通孔2は、内層板18に設けられており、貫通孔2は絶縁樹脂7により、通常充填されている。開口径ΦO4の非貫通孔14は、ΦI<ΦO<ΦLとなる関係を有しているため、貫通孔2の直上に非貫通孔14を形成しても、絶縁樹脂7により充填された貫通孔2を覆う金属めっきは不要である。そして、開口径ΦO4の非貫通孔14が、内壁径ΦI5の貫通孔2より小さければ、貫通孔2の直上に非貫通孔を形成するには、必然的に絶縁樹脂7により充填された貫通孔を覆う金属めっきが必要なり、内層導体層が厚くなり、微細配線の形成が、不利になる。また、径ΦL6の内層導体層1が、開口径ΦO4の非貫通孔14より、大きいため、接続面積を十分確保することが、可能となる。それに対し、径ΦL6の内層導体層1が、開口径ΦO4の非貫通孔14より小さいと、接続面積を十分確保することができず、また非貫通孔14の穴あけ時の位置ずれが発生した場合は、接続不良が発生する可能性もある。   In the circuit board shown in the present invention, the through-hole 2 having the inner wall diameter ΦI5 formed in the inner layer plate 18, the inner-layer conductor layer 1 having the diameter ΦL6, and the non-through hole 14 having the opening diameter ΦO4 formed in the insulating resin layer 7 are provided. Have one or more connection hole structures having a relationship of ΦI <ΦO <ΦL (see FIG. 1A). The through hole 2 having an inner wall diameter ΦI 5 of the present invention is provided in the inner layer plate 18, and the through hole 2 is normally filled with an insulating resin 7. Since the non-through hole 14 having the opening diameter ΦO4 has a relationship of ΦI <ΦO <ΦL, even if the non-through hole 14 is formed immediately above the through hole 2, the through hole filled with the insulating resin 7 is used. No metal plating covering 2 is required. If the non-through hole 14 having the opening diameter ΦO4 is smaller than the through hole 2 having the inner wall diameter ΦI5, in order to form the non-through hole immediately above the through hole 2, the through hole necessarily filled with the insulating resin 7 is used. Metal plating covering the metal layer is required, the inner conductor layer becomes thick, and the formation of fine wiring is disadvantageous. Further, since the inner conductor layer 1 having the diameter ΦL6 is larger than the non-through hole 14 having the opening diameter ΦO4, it is possible to secure a sufficient connection area. On the other hand, when the inner conductor layer 1 having the diameter ΦL6 is smaller than the non-through hole 14 having the opening diameter ΦO4, a sufficient connection area cannot be secured, and a position shift occurs when the non-through hole 14 is drilled. In some cases, connection failure may occur.

前記貫通孔と前記内層導体層と前記非貫通孔の各径が、ΦI<ΦO<ΦLとなる関係を有していればよく、前記関係を維持しているかぎり、前記貫通孔と前記内層導体層と前記非貫通孔の各径の範囲は、特に制限されるものではない。しかし、回路形成時や非貫通孔形成時の位置合わせや、回路基板の薄型化や配線の高密度化の観点から、前記非貫通孔の開口径ΦOは、前記貫通孔の内壁径ΦIより、Φ0.05〜0.20mm大きく、また、前記内層導体層の径ΦLは、前記非貫通孔の開口径ΦOより、Φ0.05〜0.20mm大きいことが、好ましい。これにより、内層導体層と非貫通孔の間で、十分な接続面積が確保でき、接続信頼性の高い回路基板を得ることができる。   The diameters of the through hole, the inner layer conductor layer, and the non-through hole only have to have a relationship of ΦI <ΦO <ΦL, and as long as the relationship is maintained, the through hole and the inner layer conductor The range of each diameter of the layer and the non-through hole is not particularly limited. However, from the viewpoint of alignment at the time of circuit formation or non-through hole formation, thinning of the circuit board and high density of wiring, the opening diameter ΦO of the non-through hole is larger than the inner wall diameter ΦI of the through hole, It is preferable that the diameter ΦL of the inner conductor layer is larger by Φ0.05-0.20 mm than the opening diameter ΦO of the non-through hole. Thereby, a sufficient connection area can be ensured between the inner conductor layer and the non-through hole, and a circuit board with high connection reliability can be obtained.

本発明に示した回路基板において、めっきを施した貫通孔の内壁径ΦIは、Φ0.001〜0.09mmが好ましく、Φ0.01〜0.04mmがより好ましい。Φ0.001mm未満では、貫通孔の穴あけは、困難であり、また、貫通孔内部が、めっき液に十分浸漬されないため、めっきを施すことも困難である。また、貫通孔の内壁径をΦ0.001mm未満にするには、めっきを厚く施す必要があり、内層導体層の微細配線形成が困難となる。またΦ0.09mmを超すと、内層導体層の径と非貫通孔の開口径が、必然的に大きくなり、回路基板の薄型化や高密度配線を行う上で不利である。なお、めっきを施した貫通孔が形成された内層導体層を有する基板の厚みは、貫通孔穴あけ及びめっきの観点から、0.01〜0.30mmが好ましく、0.03〜0.1mmがより好ましい。   In the circuit board shown in the present invention, the inner wall diameter ΦI of the plated through hole is preferably Φ0.001 to 0.09 mm, more preferably Φ0.01 to 0.04 mm. When the diameter is less than 0.001 mm, it is difficult to make a through hole, and it is difficult to perform plating because the inside of the through hole is not sufficiently immersed in the plating solution. Further, in order to make the inner wall diameter of the through hole less than Φ0.001 mm, it is necessary to apply a thick plating, and it becomes difficult to form fine wiring of the inner conductor layer. If it exceeds Φ0.09 mm, the diameter of the inner conductor layer and the opening diameter of the non-through hole are inevitably increased, which is disadvantageous in reducing the thickness of the circuit board and high-density wiring. The thickness of the substrate having the inner conductor layer formed with plated through holes is preferably 0.01 to 0.30 mm, more preferably 0.03 to 0.1 mm, from the viewpoint of through hole drilling and plating. preferable.

貫通孔の開口部に設けられた内層導体層の径ΦLは、Φ0.11mm〜0.65mmが好ましく、Φ0.2mm〜0.50mmがより好ましく、Φ0.25mm〜0.35mmがさらに好ましい。Φ0.11mm未満では、Φ0.09mmの貫通孔を形成した場合、裕度が、片側0.01mm未満であり、回路形成時の位置合わせが、困難であり、またΦ0.65mmを超すと、回路基板の薄型化や高密度配線を行う上で不利である。   The diameter ΦL of the inner conductor layer provided in the opening of the through hole is preferably Φ0.11 mm to 0.65 mm, more preferably Φ0.2 mm to 0.50 mm, and further preferably Φ0.25 mm to 0.35 mm. If the through hole having a diameter of 0.09 mm is formed with a diameter of less than Φ0.11 mm, the tolerance is less than 0.01 mm on one side, and alignment during circuit formation is difficult. This is disadvantageous in making the substrate thinner and performing high-density wiring.

貫通孔の直上に位置する非貫通孔の開口径ΦOは、絶縁樹脂除去性の観点からΦ0.08〜0.25mmが好ましく、Φ0.08〜0.15mmが特に好ましい。Φ0.25mmを超すと、回路基板の薄型化や高密度配線を行う上で不利である。なお、非貫通孔は、複数の絶縁樹脂層にまたがって、形成されていてもかまわない(図1の(b)参照)。   The opening diameter ΦO of the non-through hole located immediately above the through hole is preferably Φ0.08 to 0.25 mm, and particularly preferably Φ0.08 to 0.15 mm, from the viewpoint of insulating resin removability. If it exceeds Φ0.25 mm, it is disadvantageous in reducing the thickness of the circuit board and performing high-density wiring. Note that the non-through hole may be formed across a plurality of insulating resin layers (see FIG. 1B).

本発明に示した回路基板において、内層導体層の厚みは1〜20μmが好ましく、5〜15μmがより好ましい。20μmを超すと、サブトラクティブ法で内層導体層を形成した場合、サイドエッチにより、微細な配線が形成困難となり、またアディティブ法等で内層導体層を形成した場合、めっきレジストに一部被さるようにめっきが析出するため、やはり微細な配線の形成が困難となる。   In the circuit board shown in the present invention, the thickness of the inner conductor layer is preferably 1 to 20 μm, more preferably 5 to 15 μm. When the inner layer conductor layer is formed by the subtractive method when the thickness exceeds 20 μm, it becomes difficult to form fine wiring by side etching, and when the inner layer conductor layer is formed by the additive method or the like, a part of the plating resist is covered. Since plating is deposited, it is still difficult to form fine wiring.

本発明に示した回路基板の製造方法において、めっきを施した内壁径ΦIの貫通孔を有する内層板を準備する工程で、貫通孔の穴あけ加工は、ドリル、炭酸ガスレーザー、UVレーザー、エキシマレーザーよる方法を用いることができるが、ドリルによる加工が好ましい。さらに、穴あけ後のめっきは、銅、錫、はんだ、ニッケル、金等が挙げられるが、経済性及び加工性の点から、銅めっきが好ましく、電解銅めっきがより好ましい。なお内層板の厚みは、貫通孔穴あけ及びめっきの観点から、0.01〜0.30mmが好ましく、0.03〜0.1mmがより好ましい。   In the method of manufacturing a circuit board shown in the present invention, in the step of preparing a plated inner wall plate having a through hole having an inner wall diameter ΦI, the drilling of the through hole is performed by drilling, carbon dioxide laser, UV laser, excimer laser. However, drilling is preferred. Further, examples of the plating after drilling include copper, tin, solder, nickel, gold and the like. From the viewpoint of economy and workability, copper plating is preferable, and electrolytic copper plating is more preferable. The thickness of the inner layer plate is preferably from 0.01 to 0.30 mm, more preferably from 0.03 to 0.1 mm, from the viewpoint of through-hole drilling and plating.

前記内層板の貫通孔の開口部に内壁径ΦIより大きな径ΦLの内層導体層を形成する工程おいて、径ΦLの内層導体層は、内層板の他の導体層と同時に形成される。導体層の形成は、サブトラクティブ法を用いても良いし、アディティブ法を用いても良い。また、形成される導体層の厚みは20μm以下が好ましく、15μm以下がより好ましい。20μm以下の導体層の形成するには、内層板に厚さ5μm以下の下地銅箔を用い、さらに15μm以下の銅めっきを行うのが好ましい。   In the step of forming an inner layer conductor layer having a diameter ΦL larger than the inner wall diameter ΦI at the opening of the through hole of the inner layer plate, the inner layer conductor layer having a diameter ΦL is formed simultaneously with other conductor layers of the inner layer plate. The conductor layer may be formed using a subtractive method or an additive method. Further, the thickness of the formed conductor layer is preferably 20 μm or less, and more preferably 15 μm or less. In order to form a conductor layer having a thickness of 20 μm or less, it is preferable to use a base copper foil having a thickness of 5 μm or less for the inner layer plate and further perform copper plating of 15 μm or less.

前記内層板の導体層表面に絶縁樹脂層を形成する工程において、絶縁樹脂は熱硬化性樹脂又は熱可塑性を用いることが好ましい。熱硬化性樹脂としては例えば、フェノール樹脂、エポキシ樹脂、ポリイミド樹脂、シアネート樹脂、マレイミド樹脂、イソシアネート樹脂、ベンゾシクロブテン樹脂、ビニル樹脂、などが挙げられるが、これらに限定されるわけではない。熱硬化性樹脂は、1種類のものを単独で用いても良いし、2種類以上を混合して用いても良い。熱可塑性樹脂としては例えば、フッ素樹脂、ポリフェニレンエーテル、変性ポリフェニレンエーテル、ポリフェニレンスルフィド、ポリカーボネート、ポリエーテルイミド、ポリエーテルエーテルケトン、ポリアリレート、ポリアミド、ポリアミドイミド、ポリブタジエン、ポリイミドなどが挙げられるが、これらに限定されるわけではない。熱可塑性樹脂は、1種類のものを単独で用いても良いし、2種類以上を混合して用いても良い。また、無機充填剤を含んでいても良い。   In the step of forming the insulating resin layer on the surface of the conductor layer of the inner layer plate, the insulating resin is preferably a thermosetting resin or thermoplastic. Examples of the thermosetting resin include, but are not limited to, a phenol resin, an epoxy resin, a polyimide resin, a cyanate resin, a maleimide resin, an isocyanate resin, a benzocyclobutene resin, and a vinyl resin. One type of thermosetting resin may be used alone, or two or more types may be mixed and used. Examples of the thermoplastic resin include fluorine resin, polyphenylene ether, modified polyphenylene ether, polyphenylene sulfide, polycarbonate, polyether imide, polyether ether ketone, polyarylate, polyamide, polyamide imide, polybutadiene, and polyimide. It is not limited. One type of thermoplastic resin may be used alone, or two or more types may be mixed and used. Moreover, the inorganic filler may be included.

絶縁樹脂層を形成する場合、市販のプリプレグ、樹脂ワニスあるいは、樹脂フィルムなどを用いることができる。市販のプリプレグとしては、GEA−679FZPE(日立化成工業株式会社製、商品名)などが、挙げられる。銅箔と前記内層板の間にプリプレグ等を介し、プレスなどにより、前記内層板の導体層表面に、絶縁樹脂層を形成する際、めっきを行った貫通孔を、プリプレグ等の絶縁樹脂により、同時に充填することが、好ましい。また、プレス以外でも、内層板に樹脂ワニスを塗布し、同様に、導体層表面に、絶縁樹脂層を形成し、かつ貫通孔を、絶縁樹脂により充填してもかまわない。   When forming an insulating resin layer, a commercially available prepreg, resin varnish, resin film, or the like can be used. Examples of commercially available prepregs include GEA-679FZPE (trade name, manufactured by Hitachi Chemical Co., Ltd.). When forming an insulating resin layer on the surface of the conductor layer of the inner layer plate by pressing or the like through a prepreg between the copper foil and the inner layer plate, the plated through holes are filled simultaneously with an insulating resin such as a prepreg. It is preferable to do. In addition to the press, a resin varnish may be applied to the inner layer plate, similarly, an insulating resin layer may be formed on the surface of the conductor layer, and the through holes may be filled with the insulating resin.

また、予め、めっきを行った貫通孔を、穴埋め用絶縁樹脂などにより、充填しておいてもかまわない。穴埋め用絶縁樹脂は、市販品が使用可能である。この場合、内層板に導体層を形成する前、貫通孔のめっき後、穴埋め用絶縁樹脂などにより、充填する。そして、その後回路導体層を形成、さらにその表面に絶縁樹脂層を形成する。   In addition, the plated through holes may be filled with insulating resin for filling holes in advance. Commercially available products can be used as the insulating resin for filling holes. In this case, before forming the conductor layer on the inner layer plate, after plating the through holes, the inner layer plate is filled with an insulating resin for filling holes. Thereafter, a circuit conductor layer is formed, and an insulating resin layer is formed on the surface.

本発明におけるめっきを施した内層板の貫通孔内は、絶縁樹脂によって貫通孔の容積の50%以上充填されているのが好ましく、孔の容積の80%以上充填されているのがより好ましく、孔の容積の100%充填されているのが特に好ましい。   The inside of the through hole of the inner layer plate plated in the present invention is preferably filled with 50% or more of the volume of the through hole by the insulating resin, more preferably 80% or more of the volume of the hole, It is particularly preferred that 100% of the pore volume is filled.

本発明に示した回路基板の製造方法において、前記貫通孔の直上に内壁径ΦIより大きくかつ径ΦLより小さな開口径ΦOの非貫通孔を前記絶縁樹脂層に少なくとも1つ以上形成する工程で、絶縁樹脂層に形成する非貫通孔は、炭酸ガスレーザー、UVレーザー、エキシマレーザー等により形成可能であるが、炭酸ガスレーザーが好ましい。絶縁樹脂層表面に銅箔が存在する場合は、銅箔にコンフォーマルマスクを形成し、レーザ穴あけを行ってもかまわない。また、存在する銅箔が、厚み5μm以下であれば、コンフォーマルマスクを形成せず、ダイレクトに、レーザ穴あけも可能である。また、レーザ穴あけあるいは、穴あけ樹脂の残りの除去工程により、貫通孔に充填された絶縁樹脂が、内層導体層表面より、わずかに凹状になったとしても、回路基板の接続信頼性など、特に問題はない。   In the method for manufacturing a circuit board according to the present invention, in the step of forming at least one non-through hole having an opening diameter ΦO larger than the inner wall diameter ΦI and smaller than the diameter ΦL directly above the through hole in the insulating resin layer, The non-through holes formed in the insulating resin layer can be formed by a carbon dioxide laser, UV laser, excimer laser, or the like, but a carbon dioxide laser is preferable. When copper foil exists on the surface of the insulating resin layer, a conformal mask may be formed on the copper foil and laser drilling may be performed. Further, if the existing copper foil is 5 μm or less in thickness, laser drilling can be performed directly without forming a conformal mask. Even if the insulating resin filled in the through hole becomes slightly concave from the surface of the inner conductor layer due to laser drilling or the remaining removal process of the drilling resin, there is a particular problem such as connection reliability of the circuit board. There is no.

本発明における内層板の貫通孔の直上に位置する開口径ΦOの非貫通孔は、ΦI<ΦO<ΦLとなる関係を有していればよく、前記関係を維持しているかぎり、非貫通孔の径の範囲は、特に制限されるものでない。また、複数の絶縁樹脂層にまたがって、形成してもかまわない(図1の(b)参照)。なお、回路基板の薄型化及び高密度配線の観点から、めっきを施した貫通孔の内壁径ΦIは、Φ0.001〜0.09mmが好ましく、Φ0.01〜0.04mmがより好ましい。また、非貫通孔の開口径ΦOは、Φ0.08〜0.25mmが好ましく、Φ0.08〜0.15mmが特に好ましい。   In the present invention, the non-through hole with the opening diameter ΦO located immediately above the through hole of the inner layer plate only needs to have a relationship of ΦI <ΦO <ΦL, and as long as the relationship is maintained, the non-through hole The range of the diameter is not particularly limited. Further, it may be formed over a plurality of insulating resin layers (see FIG. 1B). In addition, from the viewpoint of thinning the circuit board and high-density wiring, the inner wall diameter ΦI of the plated through hole is preferably Φ0.001 to 0.09 mm, and more preferably Φ0.01 to 0.04 mm. Further, the opening diameter ΦO of the non-through hole is preferably Φ0.08 to 0.25 mm, and particularly preferably Φ0.08 to 0.15 mm.

以下、実施例により本発明を説明する(図3参照)。なお、本発明は、以下の実施例に限定されるものではない。   Hereinafter, the present invention will be described with reference to examples (see FIG. 3). The present invention is not limited to the following examples.

厚さ3μmの銅箔を張り合わせた絶縁樹脂層公称厚さ0.06mmのガラス布基材エポキシ樹脂銅張積層板MCL−E−679F(日立化成工業株式会社製、商品名)にドリル加工にてΦ0.05mmの貫通孔を形成し、10μmの電解銅めっきを施してめっき導体層を形成し、内壁径ΦI5の0.03mmの貫通孔2を形成した。さらに、エッチングレジスト用ドライフィルムNIT215(ニチゴー・モートン株式会社製、商品名)をラミネータで仮圧着し、ネガ型マスクを張り合わせて紫外線で露光して両面に回路を焼付け、1%炭酸ナトリウム水溶液で現像してエッチングレジストを形成し、エッチングレジストのない銅部分を塩化第二鉄水溶液で除去し、3%水酸化ナトリウム水溶液でエッチングレジストを剥離除去して両面に、ライン/スペース=40/40μmの配線(導体層)を形成して、内層板18となる第1の回路基板10とした。その際、前記貫通孔2にΦL6の0.30mmのランド(内層導体層)1を形成した(図3(a))。   Insulating resin layer laminated with 3 μm thick copper foil Glass cloth base epoxy resin copper clad laminate MCL-E-679F (trade name, manufactured by Hitachi Chemical Co., Ltd.) with nominal thickness of 0.06 mm A through hole of Φ0.05 mm was formed, and 10 μm electrolytic copper plating was applied to form a plated conductor layer, thereby forming a 0.03 mm through hole 2 having an inner wall diameter ΦI5. Furthermore, dry film NIT215 (product name, manufactured by Nichigo-Morton Co., Ltd.) for etching resist is temporarily pressure-bonded with a laminator, a negative mask is laminated, exposed to ultraviolet rays, the circuit is printed on both sides, and developed with a 1% aqueous sodium carbonate solution. Then, the etching resist is formed, the copper portion without the etching resist is removed with a ferric chloride aqueous solution, and the etching resist is peeled and removed with a 3% aqueous sodium hydroxide solution, and lines / spaces = 40/40 μm wiring on both sides. (Conductive layer) was formed to form the first circuit board 10 to be the inner layer plate 18. At that time, a 0.30 mm land (inner conductor layer) 1 of ΦL6 was formed in the through hole 2 (FIG. 3A).

第1の回路基板10の導体層を粗化処理し、第1の回路基板10の両面に対し、ガラス布にエポキシ樹脂を含浸させた公称厚さ0.04mmのプリプレグGEA−679FZPE(日立化成工業株式会社製、商品名)を介して、35μmキャリア銅箔付3μm銅箔MT35S3(三井金属鉱業株式会社製、商品名)を真空プレスにて圧力24.5×105Pa(25kgf/cm)、温度175℃、保持時間1.5hrの条件で積層し、絶縁樹脂層7を形成した。その際、前記貫通孔2をプリプレグGEA−679FZPEの樹脂樹脂7により充填した。さらに、キャリア銅箔を剥離して、3μm銅箔17を残し、第2の回路基板11とした(図3(b))。 The conductor layer of the first circuit board 10 is roughened, and a prepreg GEA-679FZPE (Hitachi Chemical Industry Co., Ltd.) having a nominal thickness of 0.04 mm in which both surfaces of the first circuit board 10 are impregnated with a glass cloth with an epoxy resin. (Trade name) manufactured by Co., Ltd., and 3 μm copper foil MT35S3 (trade name, manufactured by Mitsui Mining & Smelting Co., Ltd.) with 35 μm carrier copper foil is vacuum-pressed at 24.5 × 10 5 Pa (25 kgf / cm 2 ). The insulating resin layer 7 was formed by laminating under the conditions of a temperature of 175 ° C. and a holding time of 1.5 hours. At that time, the through hole 2 was filled with a resin resin 7 of prepreg GEA-679FZPE. Further, the carrier copper foil was peeled off to leave the 3 μm copper foil 17 to form the second circuit board 11 (FIG. 3B).

第2の回路基板11の両面にドライフィルムNIT225(ニチゴー・モートン株式会社製、商品名)をラミネータで仮圧着し、ネガ型マスクを張り合わせて紫外線で露光して両面に回路を焼付け、1%炭酸ナトリウム水溶液で現像してエッチングレジストを形成し、エッチングレジストのない銅部分を塩化第二鉄水溶液で除去し、3%水酸化ナトリウム水溶液でエッチングレジストを剥離除去して、第1の回路基板10の貫通孔2上の非貫通孔設置箇所にレーザー照射用マスクとなるΦ0.15mmのコンフォーマルマスク12及びレーザー位置認識用のパターンを形成し、第3の回路基板13とした(図3(c))。   A dry film NIT225 (trade name, manufactured by Nichigo Morton Co., Ltd.) is temporarily bonded to both surfaces of the second circuit board 11 with a laminator, a negative mask is laminated, exposed to ultraviolet rays, and the circuit is printed on both surfaces by baking with 1% carbonic acid. An etching resist is formed by developing with a sodium aqueous solution, a copper portion without the etching resist is removed with a ferric chloride aqueous solution, and the etching resist is peeled and removed with a 3% sodium hydroxide aqueous solution. A conformal mask 12 having a diameter of 0.15 mm to be a laser irradiation mask and a laser position recognition pattern are formed at a non-through hole installation location on the through hole 2 to form a third circuit board 13 (FIG. 3C). ).

第3の回路基板13の両面に炭酸ガスレーザー加工機LC−1C/21(日立ビアメカニクス株式会社製、商品名)により、ビーム照射径Φ0.3mm、周波数500Hz、パルス幅20μs、4ショットの条件で1穴ずつ加工し、第3の回路基板13の貫通孔2上にΦO4の0.15mmの非貫通孔14を形成し、第4の回路基板15とした(図3(d))。   On both surfaces of the third circuit board 13, a carbon dioxide laser processing machine LC-1C / 21 (trade name, manufactured by Hitachi Via Mechanics Co., Ltd.) is used. Beam irradiation diameter Φ0.3 mm, frequency 500 Hz, pulse width 20 μs, 4-shot conditions Then, a 0.15 mm non-through hole 14 of ΦO4 was formed on the through hole 2 of the third circuit board 13 to form a fourth circuit board 15 (FIG. 3D).

第4の回路基板15に電解銅めっきを施して表面導体層を形成し、次いでエッチングレジスト用ドライフィルムNIT215(ニチゴー・モートン株式会社製、商品名)をラミネータで仮圧着し、ネガ型マスクを張り合わせて紫外線で露光して両面に回路を焼付け、1%炭酸ナトリウム水溶液で現像してエッチングレジストを形成し、エッチングレジストのない銅部分を塩化第二鉄水溶液で除去し、3%水酸化ナトリウム水溶液でエッチングレジストを剥離除去して配線(導体層)3を形成し、第5の回路基板16とした(図3(e))。   Electrolytic copper plating is applied to the fourth circuit board 15 to form a surface conductor layer, and then a dry film for etching resist NIT215 (product name, manufactured by Nichigo Morton Co., Ltd.) is temporarily bonded with a laminator, and a negative mask is laminated. After exposure to ultraviolet light, the circuit is baked on both sides, developed with 1% aqueous sodium carbonate solution to form an etching resist, and the copper part without the etching resist is removed with aqueous ferric chloride solution, and with 3% aqueous sodium hydroxide solution. The etching resist was peeled and removed to form a wiring (conductor layer) 3 to obtain a fifth circuit board 16 (FIG. 3E).

作製した内層板である第1の回路基板10のライン/スペース=40/40μmの配線の形成性を、評価した結果、断線、短絡等の不良はなく、またライン幅も40±5μm以内であった。また、回路基板の断面を観察し、貫通孔の絶縁樹脂の充填性を調べた結果、全数充填しているのを確認した。   As a result of evaluating the formability of the line / space = 40/40 μm of the first circuit board 10 which is the produced inner layer board, there was no defect such as disconnection or short circuit, and the line width was within 40 ± 5 μm. It was. Further, the cross section of the circuit board was observed, and the filling property of the insulating resin in the through hole was examined. As a result, it was confirmed that the entire number was filled.

(比較例1)
厚さ3μmの銅箔を張り合わせた絶縁樹脂層公称厚さ0.06mmのガラス布基材エポキシ樹脂銅張積層板MCL−E−679F(日立化成工業株式会社製、商品名)にドリル加工にてΦ0.25mmの貫通孔を形成し、10μmの電解銅めっきを施してめっき導体層を形成し、Φ0.23mmの貫通孔を形成した。貫通孔を、穴埋めインクSER−490BNH(山栄化学株式会社製、商品名)で充填し、さらに10μmの電解銅めっきを施して、めっき導体層をさらに形成した。さらに、エッチングレジスト用ドライフィルムNIT215(ニチゴー・モートン株式会社製、商品名)をラミネータで仮圧着し、ネガ型マスクを張り合わせて紫外線で露光して両面に回路を焼付け、1%炭酸ナトリウム水溶液で現像してエッチングレジストを形成し、エッチングレジストのない銅部分を塩化第二鉄水溶液で除去し、3%水酸化ナトリウム水溶液でエッチングレジストを剥離除去して両面に、ライン/スペース=40/40μmの配線を形成して、第1の回路基板とした。その際、前記貫通孔にΦ0.40mmのランド(導体層)を形成した。
(Comparative Example 1)
Insulating resin layer laminated with 3 μm thick copper foil Glass cloth base epoxy resin copper clad laminate MCL-E-679F (trade name, manufactured by Hitachi Chemical Co., Ltd.) with nominal thickness of 0.06 mm A through hole having a diameter of 0.25 mm was formed, electrolytic copper plating of 10 μm was applied to form a plated conductor layer, and a through hole having a diameter of 0.23 mm was formed. The through hole was filled with hole-filling ink SER-490BNH (trade name, manufactured by Yamaei Chemical Co., Ltd.), and further subjected to electrolytic copper plating of 10 μm to further form a plated conductor layer. Furthermore, dry film NIT215 (product name, manufactured by Nichigo-Morton Co., Ltd.) for etching resist is temporarily pressure-bonded with a laminator, a negative mask is laminated, exposed to ultraviolet rays, the circuit is printed on both sides, and developed with a 1% aqueous sodium carbonate solution. Then, the etching resist is formed, the copper portion without the etching resist is removed with a ferric chloride aqueous solution, and the etching resist is peeled and removed with a 3% aqueous sodium hydroxide solution, and lines / spaces = 40/40 μm wiring on both sides. To form a first circuit board. At that time, a land (conductor layer) of Φ0.40 mm was formed in the through hole.

以下、実施例1と同様に回路基板を作製した。作製した内層板である第1の回路基板のライン/スペース=40/40μmの配線の形成性を、評価した結果、断線、短絡等の不良が一部発生し、またライン幅も40±10μm以内であった。   Thereafter, a circuit board was produced in the same manner as in Example 1. As a result of evaluating the formability of the line / space = 40/40 μm of the first circuit board as the produced inner layer board, some defects such as disconnection and short circuit occurred, and the line width was within 40 ± 10 μm Met.

以上、実施例1に示したとおり、貫通孔もΦ0.09mm以下と小さく、非貫通孔が回路基板の高密度化を損なわない程度にこれより大きいため、貫通孔の絶縁樹脂に対するめっきが不要であり、よって内層板の導体層が薄く、微細配線が形成可能であった。また、貫通孔の絶縁樹脂の充填も、内層板の導体層表面の絶縁樹脂層の形成と同時であり、充填性も良く、回路基板の作製が効率よく行える。それに対し、比較例1は、貫通孔も大きく、貫通孔の絶縁樹脂の充填後のめっきが必要なため、内層板の導体層が厚くなり、微細配線の形成が困難であった。   As described above, as shown in Example 1, the through-hole is also as small as Φ0.09 mm or less, and the non-through-hole is larger than this so as not to impair the high density of the circuit board. Therefore, the conductor layer of the inner layer plate is thin, and fine wiring can be formed. Further, the filling of the through hole with the insulating resin is performed simultaneously with the formation of the insulating resin layer on the surface of the conductor layer of the inner layer plate, the filling property is good, and the circuit board can be efficiently manufactured. On the other hand, Comparative Example 1 had a large through hole and required plating after filling the through hole with an insulating resin, so that the conductor layer of the inner layer plate was thick and it was difficult to form fine wiring.

本発明の回路基板の接続孔構造の断面図である。It is sectional drawing of the connection hole structure of the circuit board of this invention. 従来の回路基板の断面図である。It is sectional drawing of the conventional circuit board. 本発明の実施例の製造工程における回路基板の断面図である。It is sectional drawing of the circuit board in the manufacturing process of the Example of this invention.

符号の説明Explanation of symbols

1・・・内層導体層
2・・・貫通孔
3・・・導体層
4・・・非貫通孔の開口径ΦO
5・・・貫通孔の内壁径ΦI
6・・・内層導体層の径ΦL
7・・・絶縁樹脂(絶縁樹脂層)
8・・・穴埋め用絶縁樹脂
9・・・導電材
10・・・第1の回路基板
11・・・第2の回路基板
12・・・コンフォーマルマスク
13・・・第3の回路基板
14・・・非貫通孔
15・・・第4の回路基板
16・・・第5の回路基板
17・・・銅箔
18・・・内層板
DESCRIPTION OF SYMBOLS 1 ... Inner layer conductor layer 2 ... Through-hole 3 ... Conductor layer 4 ... Opening diameter (PHI) O of a non-through-hole
5 ... Inner wall diameter ΦI of the through hole
6 ... Diameter of inner conductor layer ΦL
7 ... Insulating resin (insulating resin layer)
8 ... Insulating resin for hole filling 9 ... Conductive material 10 ... First circuit board 11 ... Second circuit board 12 ... Conformal mask 13 ... Third circuit board 14 ..Non-through hole 15 ... fourth circuit board 16 ... fifth circuit board 17 ... copper foil 18 ... inner layer board

Claims (5)

めっきを施した内壁径ΦIの貫通孔を有する内層板と、前記内層板の貫通孔の開口部に設けられた径ΦLの内層導体層と、前記内層導体層表面に形成された絶縁樹脂層と、前記絶縁樹脂層に形成された前記貫通孔の直上に位置する開口径ΦOの内層導体層に達する非貫通孔とを有する回路基板において、内壁径ΦIの貫通孔と径ΦLの内層導体層と開口径ΦOの非貫通孔が、ΦI<ΦO<ΦLとなる関係を持つ接続孔構造を1つ以上有する回路基板。   An inner layer plate having a plated through hole with an inner wall diameter of ΦI, an inner layer conductor layer with a diameter of ΦL provided in an opening of the through hole of the inner layer plate, an insulating resin layer formed on the surface of the inner layer conductor layer, A circuit board having a non-through hole reaching the inner conductor layer having an opening diameter ΦO located immediately above the through hole formed in the insulating resin layer, and a through hole having an inner wall diameter ΦI and an inner layer conductor layer having a diameter ΦL; A circuit board having at least one connection hole structure in which a non-through hole having an opening diameter of ΦO has a relationship of ΦI <ΦO <ΦL. めっきを施した内壁径ΦIが、Φ0.001〜0.09mmである請求項1に記載の回路基板。   The circuit board according to claim 1, wherein the plated inner wall diameter ΦI is Φ0.001 to 0.09 mm. 内層導体層の厚みが、1μm〜20μmである請求項1又は請求項2に記載の回路基板。   The circuit board according to claim 1, wherein the inner conductor layer has a thickness of 1 μm to 20 μm. めっきを施した内壁径ΦIの貫通孔を有する内層板を準備する工程、前記内層板の貫通孔の開口部に径ΦIより大きな径ΦLの内層導体層を含む導体層を形成する工程、ΦLの内層導体層を含む導体層表面に絶縁樹脂層を形成する工程、前記貫通孔の直上に径ΦIより大きくかつ径ΦLより小さな開口径ΦOの内層導体層に達する非貫通孔を前記絶縁樹脂層に少なくとも1つ以上形成する工程を含む回路基板の製造方法。   A step of preparing an inner layer plate having a plated through hole with an inner wall diameter ΦI, a step of forming a conductor layer including an inner layer conductor layer having a diameter ΦL larger than the diameter ΦI at the opening of the through hole of the inner layer plate, A step of forming an insulating resin layer on the surface of the conductor layer including the inner layer conductor layer, a non-through hole reaching the inner layer conductor layer having an opening diameter ΦO larger than the diameter ΦI and smaller than the diameter ΦL immediately above the through hole in the insulating resin layer; A method for manufacturing a circuit board, comprising a step of forming at least one or more. ΦLの導体層を含む導体層表面に絶縁樹脂層を形成する工程が、貫通孔を絶縁樹脂で埋め込む工程を含む請求項4に記載の回路基板の製造方法。   The method of manufacturing a circuit board according to claim 4, wherein the step of forming the insulating resin layer on the surface of the conductor layer including the conductor layer of ΦL includes a step of filling the through hole with the insulating resin.
JP2003356634A 2003-10-16 2003-10-16 Circuit board and method of manufacturing the same Pending JP2005123400A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
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Publications (1)

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