JP2005121379A5 - - Google Patents

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Publication number
JP2005121379A5
JP2005121379A5 JP2003353475A JP2003353475A JP2005121379A5 JP 2005121379 A5 JP2005121379 A5 JP 2005121379A5 JP 2003353475 A JP2003353475 A JP 2003353475A JP 2003353475 A JP2003353475 A JP 2003353475A JP 2005121379 A5 JP2005121379 A5 JP 2005121379A5
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JP
Japan
Prior art keywords
nitrogen concentration
nno
complex
measuring
pair
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JP2003353475A
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English (en)
Japanese (ja)
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JP2005121379A (ja
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Priority to JP2003353475A priority Critical patent/JP2005121379A/ja
Priority claimed from JP2003353475A external-priority patent/JP2005121379A/ja
Publication of JP2005121379A publication Critical patent/JP2005121379A/ja
Publication of JP2005121379A5 publication Critical patent/JP2005121379A5/ja
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JP2003353475A 2003-10-14 2003-10-14 シリコン結晶中の窒素濃度定量化方法、シリコン結晶の評価方法、および半導体装置の製造方法 Pending JP2005121379A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003353475A JP2005121379A (ja) 2003-10-14 2003-10-14 シリコン結晶中の窒素濃度定量化方法、シリコン結晶の評価方法、および半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003353475A JP2005121379A (ja) 2003-10-14 2003-10-14 シリコン結晶中の窒素濃度定量化方法、シリコン結晶の評価方法、および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2005121379A JP2005121379A (ja) 2005-05-12
JP2005121379A5 true JP2005121379A5 (https=) 2007-02-22

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ID=34611750

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JP2003353475A Pending JP2005121379A (ja) 2003-10-14 2003-10-14 シリコン結晶中の窒素濃度定量化方法、シリコン結晶の評価方法、および半導体装置の製造方法

Country Status (1)

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JP (1) JP2005121379A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114199820B (zh) * 2021-12-07 2024-06-07 北京华亘安邦科技有限公司 一种气体浓度的检测方法和装置

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