JP2005121379A - シリコン結晶中の窒素濃度定量化方法、シリコン結晶の評価方法、および半導体装置の製造方法 - Google Patents

シリコン結晶中の窒素濃度定量化方法、シリコン結晶の評価方法、および半導体装置の製造方法 Download PDF

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JP2005121379A
JP2005121379A JP2003353475A JP2003353475A JP2005121379A JP 2005121379 A JP2005121379 A JP 2005121379A JP 2003353475 A JP2003353475 A JP 2003353475A JP 2003353475 A JP2003353475 A JP 2003353475A JP 2005121379 A JP2005121379 A JP 2005121379A
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nitrogen concentration
infrared absorption
wafer
absorption line
nitrogen
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JP2005121379A5 (https=
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Katsuto Tanahashi
克人 棚橋
Hiroshi Kaneda
寛 金田
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Fujitsu Ltd
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Fujitsu Ltd
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JP2003353475A 2003-10-14 2003-10-14 シリコン結晶中の窒素濃度定量化方法、シリコン結晶の評価方法、および半導体装置の製造方法 Pending JP2005121379A (ja)

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JP2003353475A JP2005121379A (ja) 2003-10-14 2003-10-14 シリコン結晶中の窒素濃度定量化方法、シリコン結晶の評価方法、および半導体装置の製造方法

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JP2003353475A JP2005121379A (ja) 2003-10-14 2003-10-14 シリコン結晶中の窒素濃度定量化方法、シリコン結晶の評価方法、および半導体装置の製造方法

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JP2005121379A true JP2005121379A (ja) 2005-05-12
JP2005121379A5 JP2005121379A5 (https=) 2007-02-22

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114199820A (zh) * 2021-12-07 2022-03-18 北京华亘安邦科技有限公司 一种气体浓度的检测方法和装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114199820A (zh) * 2021-12-07 2022-03-18 北京华亘安邦科技有限公司 一种气体浓度的检测方法和装置
CN114199820B (zh) * 2021-12-07 2024-06-07 北京华亘安邦科技有限公司 一种气体浓度的检测方法和装置

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