JP2005116753A5 - - Google Patents
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- Publication number
- JP2005116753A5 JP2005116753A5 JP2003348567A JP2003348567A JP2005116753A5 JP 2005116753 A5 JP2005116753 A5 JP 2005116753A5 JP 2003348567 A JP2003348567 A JP 2003348567A JP 2003348567 A JP2003348567 A JP 2003348567A JP 2005116753 A5 JP2005116753 A5 JP 2005116753A5
- Authority
- JP
- Japan
- Prior art keywords
- resist mask
- silicon layer
- manufacturing
- semiconductor device
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 10
- 229910052710 silicon Inorganic materials 0.000 claims 10
- 239000010703 silicon Substances 0.000 claims 10
- 239000004065 semiconductor Substances 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 5
- 238000001312 dry etching Methods 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 239000006227 byproduct Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003348567A JP2005116753A (ja) | 2003-10-07 | 2003-10-07 | 半導体装置の製造方法 |
| US10/958,587 US20050106826A1 (en) | 2003-10-07 | 2004-10-06 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003348567A JP2005116753A (ja) | 2003-10-07 | 2003-10-07 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005116753A JP2005116753A (ja) | 2005-04-28 |
| JP2005116753A5 true JP2005116753A5 (https=) | 2006-11-02 |
Family
ID=34540725
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003348567A Abandoned JP2005116753A (ja) | 2003-10-07 | 2003-10-07 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20050106826A1 (https=) |
| JP (1) | JP2005116753A (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100847831B1 (ko) | 2006-12-29 | 2008-07-23 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0621018A (ja) * | 1992-06-29 | 1994-01-28 | Sony Corp | ドライエッチング方法 |
| US6362111B1 (en) * | 1998-12-09 | 2002-03-26 | Texas Instruments Incorporated | Tunable gate linewidth reduction process |
| JP2002025986A (ja) * | 2000-07-06 | 2002-01-25 | Matsushita Electric Ind Co Ltd | ドライエッチング方法 |
| US6689687B1 (en) * | 2001-02-02 | 2004-02-10 | Advanced Micro Devices, Inc. | Two-step process for nickel deposition |
| US6551941B2 (en) * | 2001-02-22 | 2003-04-22 | Applied Materials, Inc. | Method of forming a notched silicon-containing gate structure |
-
2003
- 2003-10-07 JP JP2003348567A patent/JP2005116753A/ja not_active Abandoned
-
2004
- 2004-10-06 US US10/958,587 patent/US20050106826A1/en not_active Abandoned
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