TW200516665A - Method for controlling critical dimension by utilizing resist sidewall protection - Google Patents
Method for controlling critical dimension by utilizing resist sidewall protectionInfo
- Publication number
- TW200516665A TW200516665A TW092131836A TW92131836A TW200516665A TW 200516665 A TW200516665 A TW 200516665A TW 092131836 A TW092131836 A TW 092131836A TW 92131836 A TW92131836 A TW 92131836A TW 200516665 A TW200516665 A TW 200516665A
- Authority
- TW
- Taiwan
- Prior art keywords
- patterned photoresist
- cap layer
- critical dimension
- thin film
- top surface
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000010409 thin film Substances 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
A method for controlling line width critical dimension is disclosed. A semiconductor layer is deposited on a substrate. A cap layer is formed on the semiconductor layer. A patterned photoresist is formed on the cap layer. The patterned photoresist has a top surface and vertical sidewalls. A silicon thin film is selectively sputtered on the top surface and vertical sidewalls of the patterned photoresist, but not on the cap layer. The silicon thin film, which has a thickness: x above the top surface and a thickness: y on the sidewalls of the patterned photoresist, wherein x < y, is used to protect the patterned photoresist. Using the silicon thin film and the patterned photoresist as an etching mask, the cap layer is anisotropically etched thereby transferring the photoresist's pattern to the cap layer. Finally, using the cap layer as an etching mask, the semiconductor layer is etched.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92131836A TWI229905B (en) | 2003-11-13 | 2003-11-13 | Method for controlling critical dimension by utilizing resist sidewall protection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92131836A TWI229905B (en) | 2003-11-13 | 2003-11-13 | Method for controlling critical dimension by utilizing resist sidewall protection |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI229905B TWI229905B (en) | 2005-03-21 |
| TW200516665A true TW200516665A (en) | 2005-05-16 |
Family
ID=36083225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW92131836A TWI229905B (en) | 2003-11-13 | 2003-11-13 | Method for controlling critical dimension by utilizing resist sidewall protection |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI229905B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI822918B (en) * | 2018-12-14 | 2023-11-21 | 日商東京威力科創股份有限公司 | Plasma processing method and plasma processing apparatus |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI409852B (en) * | 2009-12-31 | 2013-09-21 | Inotera Memories Inc | Method for fabricating fine patterns of semiconductor device utilizing self-aligned double patterning |
| CN109244765A (en) * | 2018-09-26 | 2019-01-18 | 绵阳市广达精密五金制造有限公司 | A kind of adapter assembly bracket |
-
2003
- 2003-11-13 TW TW92131836A patent/TWI229905B/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI822918B (en) * | 2018-12-14 | 2023-11-21 | 日商東京威力科創股份有限公司 | Plasma processing method and plasma processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI229905B (en) | 2005-03-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |