JP2005101462A - 光起電力素子およびその製造方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 238000006243 chemical reaction Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 230000007423 decrease Effects 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 abstract description 8
- 239000010408 film Substances 0.000 description 31
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 27
- 230000000052 comparative effect Effects 0.000 description 13
- 239000007789 gas Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Microelectronics & Electronic Packaging (AREA)
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- Crystallography & Structural Chemistry (AREA)
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Abstract
【解決手段】 支持基板の凸部10は側面が凹状に湾曲した略円錐形状を有する。この場合、凸部10上にスパッタリング法により裏面電極2を形成すると、凸部10の凹状に湾曲した側面に、頂部および底面近傍で薄く中間部で厚くなるように裏面電極2が形成される。それにより、側辺が直線状の円錐形状を有する裏面電極2が形成される。
【選択図】 図2
Description
実施例では図1に示す光起電力素子100を作製し、入射光に対する光起電力素子100の反射率を測定した。裏面電極2の平均膜厚は200nmであり、裏面電極2の凸部10の形状は図2(a)の略円錐形状のものを用いる。凸部10の側面と底面とがなす傾斜角の平均値は40度である。また、隣接する凸部10同士の間隔の平均値は400nmである。
図8は、比較例1の光起電力素子の構造を示す模式的断面図である。図8に示すように、光起電力素子は、上面の形状が平面である支持基板11の上面に、裏面電極12、n型微結晶シリコン膜13、i型微結晶シリコン膜14、p型微結晶シリコン膜15および表面電極16が順に形成された構造を有する。比較例1の光起電力素子の作製条件は、実施例と同様である。
図9は、比較例2の光起電力素子の構造を示す模式的断面図である。図9に示すように、上面に複数の略半球が連続して形成された支持基板21上に、裏面電極22、n型微結晶シリコン膜23、i型微結晶シリコン膜24、p型微結晶シリコン膜25および表面電極26が順に形成された構造を有する。
実施例および比較例1,2の光起電力素子の反射率を測定した。実施例および比較例1,2の光起電力素子の反射率を図10に示す。
2 裏面電極
3 n型微結晶シリコン膜
4 i型微結晶シリコン膜
5 p型微結晶シリコン膜
6 表面電極
10,210 凸部
100 光起電力素子
200 母基板
Claims (5)
- 一面に複数の凸部を有する支持基板と、
前記支持基板の前記一面上に形成された第1の電極層と、
前記第1の電極層上に形成された光電変換層と、
前記光電変換層上に形成された第2の電極層とを備え、
前記支持基板の各凸部は、縦断面における幅が底部から頂部へ漸次減少するとともに凹状に湾曲する側面を有することを特徴とする光起電力素子。 - 前記第1の電極層は、前記支持基板の各凸部の頂部および底部近傍での厚みが前記側面の中央部での厚みに比べて小さく外表面が平面状に形成されたことを特徴とする請求項1記載の光起電力素子。
- 前記支持基板の各凸部が凹状に湾曲した側面を有する略円錐形状、略多角錐形状、略円錐台形状または略多角錐台形状を有することを特徴とする請求項1または2記載の光起電力素子。
- 一面に複数の凸部を有する支持基板を形成する工程と、
前記支持基板の前記一面上に第1の電極層を形成する工程と、
前記第1の電極層上に光電変換層を形成する工程と、
前記光電変換層上に第2の電極層を形成する工程とを備え、
前記支持基板の各凸部は、縦断面における幅が底部から頂部へ漸次減少するとともに凹状に湾曲する側面を有することを特徴とする光起電力素子の製造方法。 - 前記支持基板を形成する工程は、
一面に複数の凸部を有する母基板を形成する工程と、
前記母基板の前記複数の凸部を前記支持基板の前記一面に転写する工程とを含み、
前記母基板の各凸部は、縦断面における幅が底部から頂部へ漸次減少するとともに凸状に湾曲する側面を有することを特徴とする請求項4記載の光起電力素子の製造方法。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006344964A (ja) * | 2005-06-06 | 2006-12-21 | General Electric Co <Ge> | 太陽エネルギーシステムの光起電力集中装置 |
JP2009231500A (ja) * | 2008-03-21 | 2009-10-08 | Mitsubishi Electric Corp | 太陽電池用基板とその製造方法および太陽電池の製造方法 |
JP2009266559A (ja) * | 2008-04-24 | 2009-11-12 | Hitachi Chem Co Ltd | 太陽電池用電極基材、これを用いた太陽電池及び太陽電池用電極基材の製造法 |
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2003
- 2003-09-26 JP JP2003335679A patent/JP2005101462A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006344964A (ja) * | 2005-06-06 | 2006-12-21 | General Electric Co <Ge> | 太陽エネルギーシステムの光起電力集中装置 |
JP2009231500A (ja) * | 2008-03-21 | 2009-10-08 | Mitsubishi Electric Corp | 太陽電池用基板とその製造方法および太陽電池の製造方法 |
JP2009266559A (ja) * | 2008-04-24 | 2009-11-12 | Hitachi Chem Co Ltd | 太陽電池用電極基材、これを用いた太陽電池及び太陽電池用電極基材の製造法 |
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