JP2005076119A - Composite material for substrate incorporated with semiconductor device, and its production method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an aluminum composite material in which reinforcing material particles are uniformly distributed and which can easily be made into a thin shape, and to provide its production method. <P>SOLUTION: The method for producing a composite material for a substrate incorporated with a semiconductor device comprises: a stage where particles of aluminum or an aluminum alloy and powder consisting of at least one kind of ceramic particles are mixed, and the mixture is compacted to obtain a powdery mixture; a stage where a liquid phase mixture in which a liquid phase is formed on at least a part of the obtained powdery mixture is obtained; and a stage where a sheet is continuously obtained from the liquid phase mixture. The composite material is obtained by the production method. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a composite material mainly composed of aluminum and ceramic and a manufacturing method thereof, a composite material for a semiconductor element mounting substrate used for a heat sink material constituting a semiconductor device, and the manufacturing method thereof.

  In recent years, in semiconductor devices, the speed of semiconductor elements and the increase in the degree of integration have remarkably increased, and the influence of heat generated from the semiconductor elements cannot be ignored. As a result, a high thermal conductivity is required for the substrate material for mounting a semiconductor element in order to efficiently remove heat generated from the semiconductor element.

  Further, the interface between the semiconductor element mounting substrate material and the semiconductor element and the interface with the peripheral member constituting the semiconductor package on which the semiconductor element is mounted need to minimize the distortion caused by the thermal stress. Therefore, the substrate material for mounting a semiconductor element can set a wide range of thermal expansion coefficients, and the thermal expansion coefficient that is relatively close to the thermal expansion coefficient depending on the semiconductor elements and peripheral members that are appropriately selected and used. A material that is easy to design and manufacture, such as

Also, a method using a solder ball instead of using a wire for electrical bonding between a semiconductor element and a package (flip chip method), or a method using a solder ball instead of using a pin for bonding to a mother substrate (ball grid array method) ) Has been widely adopted. When these methods are employed, if the semiconductor element mounting substrate material is heavy, there is a high risk that the solder balls will collapse more than necessary. For this reason, a light semiconductor element mounting substrate material is desired.
Further, an inexpensive material is desired for the semiconductor element mounting substrate material.

Recently, aluminum composite materials have been proposed as candidates for semiconductor device mounting substrates, and have begun to be used in part. Among aluminum composite materials, an aluminum-silicon carbide (Al-SiC) composite material is a material having high thermal conductivity. In addition, by combining silicon carbide with a small thermal expansion coefficient (4.2 × 10 ⁻⁶ / ° C.) and aluminum with a large thermal expansion coefficient (23.5 × 10 ⁻⁶ / ° C.) A thermal expansion coefficient can be obtained. Furthermore, both aluminum and silicon carbide as raw materials are relatively inexpensive.

As a method for producing an aluminum composite material, a powder metallurgy method in which aluminum and ceramics are mixed in a powder state and molded and sintered has been conventionally known. (For example, refer to Patent Document 1).
Also known is a molten metal stirring method in which ceramic powder is introduced into molten aluminum. (For example, refer to Patent Document 2).
JP-A-10-335538 Japanese Patent Publication No. 7-819

  Aluminum silicon carbide composite materials obtained by powder metallurgy are difficult to produce thin materials, and are difficult to produce continuously, resulting in high manufacturing costs. There was a problem in using it as a plate material.

  In the molten metal stirring method, in order to introduce ceramic powder into molten aluminum, a stirring blade is rotated to generate a vortex in the molten metal, and the vortex is used to mix the ceramic powder into the molten aluminum. For this reason, foreign substances such as oxides existing on the surface of the molten metal are mixed in, or the ceramic powder remains unmixed at the part where the stirring blade or the molten metal surface and the inner wall of the crucible are in contact, and the ceramic powder melts in a lump shape at the time of casting. Or may be mixed into the mixture.

When a composite material is used for the substrate material for mounting a semiconductor element, it is required that the reinforcing material particles are more uniformly distributed, unlike a normal structural material. If the reinforcing material particles are not evenly distributed, since the uniform processing is not performed in the step of processing the composite material into a thin plate, partial warpage or undulation occurs in the thin plate. Further, if the reinforcing material particles are not uniformly distributed in the composite material, the composite material has variations in characteristics such as thermal expansion coefficient and thermal conductivity. Therefore, when the composite material is used for the semiconductor element mounting substrate material, it is required to distribute the reinforcing material particles more uniformly.
Therefore, an object of the present invention is to provide a method for producing an aluminum composite material in which reinforcing material particles are uniformly distributed and can be easily formed into a thin shape.

  The inventors of the present invention are suitable for a ceramic package or a metal package as a semiconductor package, and have a thermal conductivity and a coefficient of thermal expansion particularly suitable for a package system such as a plastic package, a flip chip system, and a ball grid array system. However, various studies have been made on a method for manufacturing a composite material for a substrate for mounting a semiconductor element, which is lightweight and can cope with increasingly complex shapes, and the present invention has been achieved.

The method for producing a composite material according to the present invention includes a step of mixing particles made of aluminum or an aluminum alloy and a powder made of at least one kind of ceramic particles and compacting to obtain a powder mixture, and the obtained powder It comprises a step of obtaining a liquid phase mixture in which a liquid phase is generated in at least a part of the mixture, and a step of obtaining a plate material from the liquid phase mixture.
In the present invention, the liquid phase mixture refers to a mixture in which a solid phase and a liquid phase coexist.

The composite material concerning this invention is manufactured by the said manufacturing method.
A method for producing a composite material for a semiconductor device mounting substrate according to the present invention includes a step of mixing particles made of aluminum or an aluminum alloy and a powder made of at least one kind of ceramic particles and compacting to obtain a powder mixture, And a step of obtaining a liquid phase mixture in which a liquid phase is generated in at least a part of the obtained powder mixture, and a step of continuously obtaining a plate material from the liquid phase mixture.

In one embodiment of the present invention, the powder mixture is further sintered to obtain a sintered body, and a liquid phase is generated in at least a part of the obtained sintered body. A board is continuously obtained from the liquid phase mixture.
In another embodiment of the present invention, the sintering step is performed at a sintering temperature of 500 to 750 ° C. in a non-oxidizing atmosphere for aluminum.
In still another embodiment of the present invention, the powder mixture contains 10 to 70% of ceramic particles by volume.

Furthermore, in one embodiment of the present invention, the ceramic particles comprise at least one kind of ceramic particles selected from aluminum oxide, silicon carbide, silicon nitride, titanium boride, silicon oxide, and beryllium oxide.
In still another embodiment of the present invention, the liquid phase portion in the liquid phase mixture is 5% or more by volume.
In still another embodiment of the present invention, the thickness of the plate material produced in the step of continuously obtaining the plate material is 20 mm or less.

Furthermore, in another embodiment of the present invention, in the step of continuously obtaining the plate material, the cooling rate of the plate material is 10 ° C./second or more.
In one embodiment of the present invention, the step of continuously obtaining the plate material from the liquid phase mixture is a kind selected from the group consisting of a twin belt method, a belt wheel method, a twin roll casting method, and a horizontal casting method. It is done by the method.

Furthermore, in one embodiment of the present invention, the method further includes a rolling step of processing the plate material into a thin plate material by rolling. In another embodiment, in the rolling step, the plate material is heated to a temperature of 200 ° C. or higher and 550 ° C. or lower and then rolled.
The composite material for a semiconductor element mounting substrate according to the present invention is manufactured by any of the manufacturing methods described above.
The components of the present invention described above can be combined as much as possible.

  The method for producing a composite material of aluminum and ceramics according to the present invention is a method for obtaining a composite material in which ceramic particles are uniformly distributed, there is little variation in characteristics, and can be processed into a thin wall or a complicated shape. Is the method. The present invention is suitable as a method for manufacturing a composite material for a substrate for mounting a semiconductor element, and the material manufactured by such a manufacturing method can be widely used for heatsink for mounting a semiconductor element.

  In the present invention, after mixing particles mainly composed of aluminum and ceramic particles, the compacted material is a liquid phase mixture in which at least a part of the liquid phase is generated in order to improve workability, and this mixture is used as a plate material. It is a manufacturing method to do.

  That is, in order to obtain a composite material in which ceramic particles are sufficiently dispersed in aluminum or an aluminum alloy, rather than using a melt mixing method that is easily affected by wettability and reactivity, and that tends to cause aggregation and voids. The composite material produced by the powder metallurgy method in which both are mixed in a powder state has higher uniformity. However, it has been difficult to continuously obtain a plate material from a composite material that is a sintered member prepared by powder metallurgy.

In order to solve this problem, the present invention creates a liquid phase in a part of the powder mixture, thereby changing the mixture into a fluid mixture that can be easily processed, and producing a plate material from the liquid phase mixture. . In order to produce a liquid phase when using pure Al powder as the powder mixture, the powder mixture may be heated to 660 ° C. or higher. In addition, when an Al—Si alloy powder is used as the powder mixture, a liquid phase may be generated by heating the powder mixture to the solidus temperature or eutectic temperature or higher.
The composite material obtained by the production method of the present invention is suitable as a composite material for a substrate for mounting semiconductor elements, but can also be used as other structural materials.

The step of mixing and compressing particles made of aluminum or aluminum alloy and powder made of ceramic particles to obtain a powder mixture is performed so that both particles are mixed substantially uniformly.
Moreover, in the manufacturing method of the composite material for semiconductor element mounting substrates according to the present invention, the step of obtaining the plate material from the liquid phase mixture is a step of continuously obtaining the plate material.

By selecting the composition and mixing ratio of aluminum (or aluminum alloy) and ceramic particles, this composite material can change the coefficient of thermal expansion over a wide range. For example, the thermal expansion coefficient of silicon (Si) constituting the semiconductor element is 4.2 × 10 ⁻⁶ / ° C., and the thermal expansion coefficient of gallium arsenide (GaAs) is 6.5 × 10 ⁻⁶ / ° C. When the peripheral member constituting the semiconductor package is formed of ceramics, for example, the thermal expansion coefficient of alumina (A1 ₂ 0 ₃ ) is 6.5 × 10 ⁻⁶ / ° C. When the peripheral member is formed of plastic, the coefficient of thermal expansion of the plastic is 12 × 10 ⁻⁶ / ° C. to 17 × 10 ⁻⁶ / ° C. The composite material produced according to the present invention can have its thermal expansion coefficient approximate to these thermal expansion coefficients by changing the mixing ratio of the materials.

  In a preferred embodiment of the present invention, the powder mixture is not used as it is, but is sintered to obtain a liquid phase mixture in which a liquid phase is generated in at least a part of the obtained sintered body. A plate material is continuously produced from. This is because by performing sintering in advance, a denser plate material can be obtained and the thermal conductivity can be improved.

  The powder mixture is preferably sintered at a sintering temperature of 500 to 750 ° C. in a non-oxidizing atmosphere for aluminum. The reason why the atmosphere for sintering is a non-oxidizing atmosphere for aluminum is to prevent oxidation of aluminum during sintering. As a non-oxidizing atmosphere for aluminum, a nitrogen atmosphere of 99% by volume or more, an atmosphere having an oxygen concentration of 200 ppm or less, or an atmosphere having a dew point of -20 ° C. or less can be used.

  Further, if the sintering temperature is in the range of 500 to 750 ° C., the bonding between the raw material particles is sufficient, and alteration due to the chemical reaction between the ceramic particles and aluminum is avoided.

  The content of the ceramic particles is preferably 10% to 70% by volume. When the volume ratio of the ceramic particles is within this range, characteristics such as the coefficient of thermal expansion of the composite material are changed, and there is an advantage of including the ceramic particles, and also by generating a liquid phase in the powder mixture. This is because sufficient fluidity for producing the plate material can be obtained.

  As the ceramic particles, it is preferable to use a material containing at least one selected from the group consisting of aluminum oxide, silicon carbide, silicon nitride, titanium boride, silicon oxide, and beryllium oxide. The ceramic particles to be mixed with aluminum (or aluminum alloy) can be selected from one of the above, or a mixture of any plurality of ceramic particles selected and mixed at an arbitrary ratio. Can be made into ceramic particles mixed with aluminum (or aluminum alloy).

In the present invention, a liquid phase is generated in the powder mixture obtained by the above-described method or a sintered body obtained by sintering the powder mixture. The ratio of the liquid phase to be generated is preferably 5% or more by volume. In the present invention, a liquid phase is generated in the aluminum phase below the melting point of the ceramic powder. Therefore, the ratio of the liquid phase is defined by the following formula (1).

Liquid phase ratio in the mixture [%]
= Volume fraction of aluminum phase [%] x liquid phase ratio in aluminum phase [%] / 100
= (100-volume fraction of ceramic phase [%]) x liquid phase ratio in aluminum phase [%] / 100
-Formula (1)
In addition, since it is difficult to actually measure the liquid phase ratio in the aluminum phase, in the present invention, the value estimated from the phase diagram using the composition and temperature of the aluminum phase is used.
For example, when a mixture of pure aluminum powder and silicon carbide powder in which the volume ratio of silicon carbide is 40% is heated to 700 ° C., at this temperature, the melting point of pure aluminum (660 ° C.) or higher is exceeded. Since it is below the melting point, the aluminum is completely melted and the silicon carbide remains in the solid phase.
Substituting into the formula (1), the ratio of the liquid phase in the mixture = (100−40) × 100/100 = 60 [%]
That is, the liquid phase ratio is 60%.
When the aluminum phase is an alloy powder, the liquid phase ratio in the mixture is defined using the solid phase ratio calculated from the composition and temperature of the aluminum alloy as described above.
For example, consider the case where a mixture of Al-8 wt% Si alloy powder and silicon carbide powder, in which the volume ratio of silicon carbide is 30%, is heated to 600 ° C. The liquid phase ratio estimated from the Al-Si binary phase diagram of Al-8wt% Si alloy at 600 ℃ is 86%. Substituting into equation (1), the liquid phase ratio of the entire mixture can be calculated as follows.
Ratio of liquid phase in the mixture = (100-30) x 86/100 = 60.2 [%]
Therefore, the ratio of the liquid phase is 60.2%.
If the ratio of the liquid phase is 5% or more, sufficient fluidity is generated in the mixture, and the step of obtaining a plate material can be performed smoothly. Further, it is possible to produce a plate even when aluminum and an aluminum alloy are completely melted. It should be noted that stirring or the like may be performed under conditions where the particles settle due to the difference in specific gravity.

  According to the production method of the present invention, the liquid phase of the liquid phase mixture changes to a solid phase in the step of obtaining the plate material. The site where the liquid phase portion is solidified becomes a solidified tissue. The solidified structure consists of primary aluminum. When this primary crystal aluminum cell is coarse, this portion has a non-uniform structure in appearance, and is difficult to apply as a composite material for a substrate for mounting semiconductor elements. That is, it is preferable to produce the plate material under such a condition that primary crystal aluminum does not grow coarsely when the liquid phase portion solidifies.

  In the step of continuously obtaining the plate material, the primary crystal aluminum size that is practically acceptable is obtained when the thickness of the plate material is 20 mm or less. Further, when the cooling rate is 10 ° C./second or more, the size of primary crystal aluminum that is practically acceptable is obtained. The lower limit of the thickness is about 0.5 mm, and the upper limit of the cooling rate is about 2000 ° C./second.

  A specific method employed as the step of continuously obtaining the plate material is preferably a twin belt method, a belt wheel method, a twin roll casting method, or a horizontal casting method. This is because a plate material in which ceramic particles are uniformly dispersed can be obtained continuously, and a composite material plate material can be obtained at low cost on an industrial scale.

  The plate material obtained by these methods can be further formed into a thin plate shape by rolling. The rolling process may be single or multiple times. It is more preferable to perform a plurality of rolling steps. By subjecting to a rolling process, the density of the composite material can be further increased. At that time, it is preferable to heat the plate material to 200 ° C. or more and 550 ° C. or less before rolling. The reason why the heating temperature of the material is set in this range is to perform processing while avoiding accumulation of processing strain, and also to prevent generation of a liquid phase again due to processing heat generation.

  The method for producing a composite material mainly composed of aluminum according to the present invention will be further described below with reference to examples. The dimensions, materials, shapes, process times, temperatures, etc. of the members described in the embodiments of the present invention are not intended to limit the scope of the present invention to those unless otherwise specified. It is merely an illustrative example.

  Pure aluminum powder produced by the gas atomization method and commercially available silicon carbide powder (# 320) were prepared, weighed so that the volume ratio of silicon carbide was 40%, and mixed for 2 hours with a kneader. The obtained mixed powder was compression molded to produce a molded body. Thereafter, the molded body was heated to 700 ° C. to generate a liquid phase. At this temperature, the aluminum component is completely melted, and only 40% by volume of the ceramic component exists as a solid phase, so the liquid phase ratio in the mixture is 60% by volume. Then, a plate was continuously produced from the mixture in which the liquid phase was produced by a twin belt method, and a plate material having a thickness of 10 mm × width 50 mm × length 3000 mm could be obtained continuously. From the obtained plate material, 50 test pieces for measuring the thermal conductivity and the thermal expansion coefficient were cut out and measured. The thermal conductivity was measured by a laser flash method using a disk-shaped test piece. The coefficient of thermal expansion was measured by a push rod method using a columnar test piece. The standard deviation of the obtained measured values was calculated, and the uniformity of the dispersion of the ceramic particles was evaluated from the variation in the measured values. As a result, it was equal to or more than the sample produced by the powder metallurgy method. From this, it became clear that ceramic materials were uniformly dispersed and a composite material with no variation in characteristics was obtained.

Similarly, green compacts were produced by changing the proportion of SiC particles to 10, 30, 50, and 70%, and evaluation was performed in the same manner as described above, and similar results were obtained.
Furthermore, when the types of ceramic particles were changed to aluminum oxide, silicon carbide, silicon nitride, titanium boride, silicon oxide, and beryllium oxide, the same results were obtained.

Prepare a powder of aluminum alloy particles with a composition of Al-8wt% Si-0.1wt% Ca and commercially available SiC powder (# 800), weigh it so that the volume ratio of ceramics is 30%, and use a kneader. Mixed for 2 hours. The obtained mixed powder was compression molded to produce a green compact, and then an attempt was made to produce a sintered body. About the samples 1-6, the sintering process was performed in nitrogen atmosphere.
Samples 1 and 7 in the table are comparative examples. Table 1 shows the results of whether or not the sintered body can be produced. Sample 1 was not densified, could not be sintered, and was not different from the green compact, so the following steps were not performed.

  Furthermore, each of the above sintered bodies (samples 2 to 6) was heated to 600 ° C. to generate a liquid phase at a rate of 60%, and the resulting mixture was continuously subjected to a thickness of 4 mm × width 100 mm × length by a twin roll method A plate with a thickness of 2000 mm was prepared. For comparison, a green compact was used as it was, and a plate material was produced under the same conditions and method. And the thermal conductivity of each obtained board | plate material and a thermal expansion coefficient were measured. The thermal conductivity was measured by a laser flash method using a disk-shaped test piece. The coefficient of thermal expansion was measured by a push rod method using a columnar test piece. In addition, for each condition, 50 test pieces were prepared and measured for both thermal conductivity and thermal expansion coefficient. The uniformity of the dispersion of the ceramic particles was evaluated by taking the standard deviation of the 50 measured values obtained per condition and from the variation of the measured values. When the variation in characteristics (thermal conductivity, coefficient of thermal expansion) was inferior to the sample produced by the powder metallurgy method, it was marked as “X”. In addition, the thermal conductivity was compared with a plate produced using the green compact as it was, and the difference in thermal conductivity is also shown in Table 1. In addition, as a code | symbol, compared with the board | plate material which used the green compact as it is, it showed with + about what improved thermal conductivity, and-about what reduced thermal conductivity.

  Samples 2 to 5 had a characteristic variation equal to or greater than that of the sample produced by the powder metallurgy method, and the thermal conductivity was improved as compared with the sample produced using the green compact as it was. Sample 6 had a large variation in characteristics, and the thermal conductivity was lower than that of the sample made of green compact. This is probably because SiC and aluminum reacted and deteriorated.

  As a result of Example 2, by performing sintering at a sintering temperature in the range of 500 to 750 ° C. in a non-oxidizing atmosphere with respect to aluminum, the ceramic material is uniformly dispersed, and the plate material produced using the green compact as it is It can be seen that a composite material with improved thermal conductivity and no variation in characteristics was obtained.

  Prepare powder of aluminum alloy particles with composition Al-2wt% Si-0.1wt% Ca and commercially available SiC powder (# 800), weigh so that the volume ratio of ceramics is 10%, and knead Mixed for 2 hours. The obtained mixed powder was compression molded to produce a green compact, and then a sintered body was produced at 700 ° C. in a nitrogen atmosphere.

  Using the obtained sintered body, the ratio of the liquid phase to be generated was changed as shown in Table 2, and an attempt was made to continuously produce a plate material by a twin roll method. The results are shown in Table 2.

As shown in Table 2, when the content was 5% or more, the plate could be produced. When the liquid phase ratio was 3%, the fluidity was poor and the plate could not be produced.
Moreover, the same result was obtained when the plate preparation was tried by the same method by changing the composition of the aluminum alloy powder and the heating temperature.

Plate thickness and cooling rate Prepare a powder of aluminum alloy particles with a composition of Al-8wt% Si-0.1wt% Ca and commercially available SiC powder (# 800) and weigh them so that the volume ratio of ceramics is 30%. And mixed with a kneader for 2 hours. The obtained mixed powder was compression molded to produce a green compact. The obtained green compact was sintered at 700 ° C. in a nitrogen atmosphere to prepare a sintered body.

  The obtained sintered body is heated to 610 ° C. to produce a mixture with a liquid phase ratio of 75%, and the method for producing the plate material as shown in Table 3, the plate thickness to be produced is changed, and the plate is produced. Went. Sample 20 is a comparative example. In the central part of the obtained plate material, “x” was given for those in which a coarse α-phase that had a non-uniform structure in appearance when processed into a heat sink, and “◯” for those that were not seen.

  As shown in Table 3, in Samples 15, 17, 18, and 19, no coarse α phase was observed at the center. In Sample 16 and Comparative Sample 20, a coarse α phase was observed in the center. That is, when the cooling rate was less than 10 ° C./second or the plate thickness exceeded 20 mm, a coarse α phase appeared.

  Furthermore, in order to evaluate the uniformity of the dispersion of the ceramic particles, the thermal expansion coefficient and thermal conductivity of Samples 15, 17, 18, and 19 in which no coarse α phase was observed were measured. As described above, measurements were taken from 50 specimens each, and the standard deviation of the measured values was calculated and evaluated from the variations in the measured values. Both were equal to or greater than those produced by the powder metallurgy method. It was. From this, it can be seen that a composite material in which the ceramic particles are uniformly dispersed and there is no variation in characteristics is obtained.

Rolling processing The plate materials of Samples 15, 17, 18, and 19 obtained in Example 4 were each heated to a temperature of 450 ° C., and the thickness reduction rate per pass was 20%, until the thickness became 1.0 mm. Rolling could be performed.

Heat sink shape processing In order to process into an actual heat sink shape, using a thin plate of 1.0 mm thickness obtained from Samples 15, 17, 18, and 19 obtained in Example 5, it was processed into a 30 × 30 mm square shape. A concave portion having a square shape of 15 × 15 mm and a depth of 0.3 mm was formed at the center by stamping and coining. As a result, any of the samples could be provided with the above shape without problems such as warpage, undulation, and cracking during processing.

Next, technical ideas other than the claims that can be grasped from the embodiment of the present invention will be described together with the effects thereof.
In the step of continuously obtaining the plate material from the mixture of the production method of the present invention, the casting speed is preferably 100 mm / min or more.
The primary aluminum cell produced by cooling the liquid phase mixture has a size within a practically acceptable range, and the produced composite material has an effect of being compatible as a composite material for a substrate for mounting a semiconductor element.

Claims (14)

Mixing particles made of aluminum or an aluminum alloy with powder made of at least one kind of ceramic particles, compacting to obtain a powder mixture, and generating a liquid phase in at least a part of the obtained powder mixture A method for producing a composite material comprising a step of obtaining a liquid phase mixture and a step of obtaining a plate material from the liquid phase mixture. A composite material produced by the production method according to claim 1. Mixing particles made of aluminum or an aluminum alloy with powder made of at least one kind of ceramic particles, compacting to obtain a powder mixture, and generating a liquid phase in at least a part of the obtained powder mixture A method for producing a composite material for a substrate for mounting a semiconductor element, comprising: a step of obtaining a liquid phase mixture; and a step of continuously obtaining a plate material from the liquid phase mixture. Further comprising a sintering step of sintering the powder mixture to obtain a sintered body, and continuously obtaining a plate material from the liquid phase mixture in which a liquid phase is generated in at least a part of the obtained sintered body. Item 4. A method for producing a composite material for a semiconductor element mounting substrate according to Item 3. The said sintering process performs sintering by the sintering temperature of 500-750 degreeC in the non-oxidizing atmosphere with respect to aluminum, The manufacture of the composite material for semiconductor element mounting substrates of Claim 4 characterized by the above-mentioned. Method. The method for producing a composite material for a semiconductor element mounting substrate according to any one of claims 3 to 5, wherein the ceramic particles are contained in the powder mixture in a volume ratio of 10 to 70%. 7. The ceramic particles according to claim 3, wherein the ceramic particles are made of ceramic particles containing at least one kind selected from aluminum oxide, silicon carbide, silicon nitride, titanium boride, silicon oxide, and beryllium oxide. A method of manufacturing a composite material for a substrate for mounting a semiconductor element. The method for producing a composite material for a substrate for mounting a semiconductor element according to any one of claims 3 to 7, wherein a ratio of a liquid phase in the liquid phase mixture is 5% or more by volume. The method for producing a composite material for a semiconductor element mounting substrate according to any one of claims 3 to 8, wherein the thickness of the plate material produced in the step of continuously obtaining the plate material from the liquid phase mixture is 20 mm or less. . 10. The composite material for a substrate for mounting a semiconductor element according to claim 3, wherein in the step of continuously obtaining a plate material from the liquid phase mixture, the cooling rate of the plate material is 10 ° C./second or more. Production method. The step of continuously obtaining a plate material from the liquid phase mixture is performed by a kind of method selected from the group consisting of a twin belt method, a belt wheel method, a twin roll casting method, and a horizontal casting method, A method for manufacturing a composite material for a substrate for mounting a semiconductor element according to any one of claims 3 to 10. The method for producing a composite material for a substrate for mounting a semiconductor element according to any one of claims 3 to 11, further comprising a rolling step of processing the plate material into a thin plate material by rolling. The method for producing a composite material for a substrate for mounting a semiconductor element according to claim 12, wherein the rolling step is performed after the plate material is heated to a temperature of 200 ° C or higher and 550 ° C or lower. A composite material for a substrate for mounting a semiconductor element, produced by the production method according to claim 3.