JP2005070629A5 - - Google Patents

Claims (26)

A field effect transistor for switching pixels corresponding to each of a plurality of pixels arranged in a matrix and a drive circuit for driving the plurality of pixels are formed on a substrate for holding an electro-optical material. A plurality of field effect transistors for the drive circuit, wherein the plurality of field effect transistors include a first complementary circuit having a drive voltage defined by a maximum voltage difference between an input signal and a power supply, and a first complementary circuit; 2 includes an N-channel field effect transistor and a P-channel field effect transistor that constitute two complementary circuits, and the drive voltage of the first complementary circuit is smaller than the drive voltage of the second complementary circuit. In the device
The threshold voltage at which the inversion layer is formed in the channel of the N-channel field effect transistor and the threshold voltage at which the inversion layer is formed in the channel of the P-channel field effect transistor are Vth−Nch and Vth−, respectively. Pch, and the absolute value Vth-d of the threshold voltage difference is
Vth-d = | (Vth-Nch)-(Vth-Pch) |
When represented by
The electro-optical device , wherein the threshold voltage difference Vth-d1 of the first complementary circuit is smaller than the threshold voltage difference Vth-d2 of the second complementary circuit .   2. The minimum value of the threshold voltage of the N-channel field effect transistor and the maximum value of the threshold voltage of the P-channel field effect transistor are defined as Vth-Nch and Vth-Pch, respectively. An electro-optical device.   3. The absolute value Vth-d of the threshold voltage difference is the driving voltage of the complementary circuit in at least one of the first complementary circuit and the second complementary circuit. On the other hand, an electro-optical device having a range of 0.25 times to 1 time, preferably 0.5 times to 1 time.   4. The maximum value of | (Vth−Nch) + (Vth−Pch) | is at least one of the first complementary circuit and the second complementary circuit according to claim 1. An electro-optical device characterized in that it is ¼ or less of the driving voltage of the complementary circuit.   5. The Vth−Nch is a positive value and the Vth−Pch is a negative value in at least one of the first complementary circuit and the second complementary circuit according to claim 1. An electro-optical device characterized by the above.   6. The absolute value Vth-d of a threshold voltage difference is at least one of the first complementary circuit and the second complementary circuit according to any one of the first complementary circuit and the second complementary circuit. An electro-optical device characterized in that it is less than or equal to half of the maximum value of the drive voltage of the complementary circuit and the second complementary circuit. A field effect transistor for switching pixels corresponding to each of a plurality of pixels arranged in a matrix and a drive circuit for driving the plurality of pixels are formed on a substrate for holding an electro-optical material. A plurality of field effect transistors for the drive circuit, wherein the plurality of field effect transistors include a first complementary circuit having a drive voltage defined by a maximum voltage difference between an input signal and a power supply, and a first complementary circuit; 2 includes an N-channel field effect transistor and a P-channel field effect transistor that constitute two complementary circuits, and the drive voltage of the first complementary circuit is smaller than the drive voltage of the second complementary circuit. In the device
Gate voltage when the value obtained by dividing the drain-source resistance by the channel width when a predetermined constant voltage Vds-Nch is applied between the drain and source in the N-channel field effect transistor becomes a predetermined value Ron-off Von-off-Nch, and a value obtained by dividing the drain-source resistance by the channel width when a predetermined constant voltage Vds-Pch is applied between the drain and the source in the P-channel field effect transistor is a predetermined value Ron when the gate voltage when the -off was Von-off-Pch, the absolute value Von-off-d the following equation of the difference between the threshold voltage of the circuit operation surface
Von-off-d = | (Von-off-Nch) − (Von-off-Pch) |
When represented by
The absolute value Von-off-d1 of the threshold voltage difference in the circuit operation plane of the first complementary circuit is the absolute value of the threshold voltage difference in the circuit operation plane of the second complementary circuit. An electro-optical device that is smaller than Von-off-d2 .   8. A value obtained by dividing a drain-source resistance by a channel width when a predetermined constant voltage Vds-Nch is applied between the drain and source in the N-channel field effect transistor according to claim 7 is a predetermined value Ron-off. The minimum value of the gate voltage is Von-off-Nch, and the drain-source resistance when the predetermined voltage Vds-Pch is applied between the drain and the source in the P-channel field effect transistor is the channel width. An electro-optical device, wherein a maximum value of a gate voltage when a value divided by a predetermined value Ron-off is Von-off-Pch.   9. The absolute value Von-off-d of a difference in threshold voltage in terms of circuit operation is obtained in at least one complementary circuit of the first complementary circuit and the second complementary circuit according to claim 7 or 8. An electro-optical device having a range of 0.25 to 1 times the driving voltage.   9. The absolute value Von-off-d of a difference in threshold voltage in terms of circuit operation is obtained in at least one complementary circuit of the first complementary circuit and the second complementary circuit according to claim 7 or 8. An electro-optical device having a range of 0.5 to 1 times the driving voltage.   11. The absolute value Von-off of a difference in threshold voltage in terms of circuit operation in at least one complementary circuit of the first complementary circuit and the second complementary circuit according to claim 7. An electro-optical device, wherein -d is equal to or less than half of the maximum value of the driving voltage of the first complementary circuit and the second complementary circuit.   12. The predetermined constant voltage Vds-Nch is 1V to 20V, the predetermined constant voltage Vds-Pch is -1V to -20V, and the predetermined value Ron- An electro-optical device, wherein off is 1 MΩ / μm to 1 GΩ / μm.   13. The electro-optical device according to claim 1, wherein each of the first complementary circuit and the second complementary circuit is configured in the driving circuit.   14. The drive voltage of at least one of the first complementary circuit and the second complementary circuit according to claim 1, wherein the drive voltage is not more than half of the drive voltage of the other complementary circuit. Electro-optical device characterized.   15. The electro-optical device according to claim 1, wherein the field effect transistor is a thin film transistor whose active layer is made of polycrystalline silicon.   16. The thickness of the gate insulating film is different between the field effect transistor constituting the first complementary circuit and the field effect transistor constituting the second complementary circuit according to claim 1. An electro-optical device.   17. The dielectric constant of the gate insulating film according to claim 1, wherein the field effect transistor constituting the first complementary circuit and the field effect transistor constituting the second complementary circuit are different. An electro-optical device.   18. The film of a semiconductor layer forming a channel region according to claim 1, wherein the field effect transistor that constitutes the first complementary circuit and the field effect transistor that constitutes the second complementary circuit. An electro-optical device having different thicknesses.   19. The defect in a semiconductor layer that forms a channel region according to claim 1, wherein the field effect transistor that constitutes the first complementary circuit and the field effect transistor that constitutes the second complementary circuit. An electro-optical device having different level average densities.   20. The impurity of a semiconductor layer forming a channel region according to claim 1, wherein the field effect transistor that constitutes the first complementary circuit and the field effect transistor that constitutes the second complementary circuit. An electro-optical device having different densities.   21. The dangling of a semiconductor layer forming a channel region according to claim 1, wherein the field effect transistor that constitutes the first complementary circuit and the field effect transistor that constitutes the second complementary circuit. Electro-optical device characterized in that the hydrogen concentration at the end of a dangling bond is different.   16. The grain average size of polycrystalline silicon constituting the active layer of the field effect transistor constituting the first complementary circuit and the field effect transistor constituting the second complementary circuit according to claim 15. 1. An electro-optical device characterized by being different.   23. The channel length according to claim 1, wherein the field effect transistor that constitutes the first complementary circuit and the field effect transistor that constitutes the second complementary circuit have different channel lengths. An electro-optical device.   24. The electro-optical device according to claim 1, wherein the electro-optical material is a liquid crystal held between the electro-optical device substrate and a counter substrate.   24. The electro-optical device according to claim 1, wherein the electro-optical material is an organic electroluminescent material that constitutes a light emitting element on the electro-optical device substrate.   An electronic apparatus using the electro-optical device defined in any one of claims 1 to 25.