JP2005069854A - Euv光源スペクトル計測装置 - Google Patents
Euv光源スペクトル計測装置 Download PDFInfo
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- JP2005069854A JP2005069854A JP2003299649A JP2003299649A JP2005069854A JP 2005069854 A JP2005069854 A JP 2005069854A JP 2003299649 A JP2003299649 A JP 2003299649A JP 2003299649 A JP2003299649 A JP 2003299649A JP 2005069854 A JP2005069854 A JP 2005069854A
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- 238000001228 spectrum Methods 0.000 title claims abstract description 53
- 238000001514 detection method Methods 0.000 claims abstract description 9
- 238000005259 measurement Methods 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 14
- 230000009467 reduction Effects 0.000 abstract description 3
- 239000006185 dispersion Substances 0.000 abstract 5
- 238000002834 transmittance Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 11
- 230000002238 attenuated effect Effects 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 230000004907 flux Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000005304 optical glass Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- CODNYICXDISAEA-UHFFFAOYSA-N bromine monochloride Chemical compound BrCl CODNYICXDISAEA-UHFFFAOYSA-N 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/429—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to measurement of ultraviolet light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/46—Measurement of colour; Colour measuring devices, e.g. colorimeters
- G01J3/50—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors
- G01J3/51—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors using colour filters
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Spectrometry And Color Measurement (AREA)
Abstract
【解決手段】 上記の課題を解決するために、本発明は、EUV光源から発散される発散光のスペクトルを測定するEUV光源スペクトル計測装置において、前記発散光を減光する減光手段と、減光された発散光のうち所望の波長帯域の発散光のみを選択する分光手段と、前記分散光の光量を熱エネルギーとして検出する検出手段を有することを特徴とするEUV光源スペクトル計測装置を提供する。
【選択図】 図1
Description
本実施形態ではEUV光源から放射される全光線についての波長強度分布を得ることのできるEUV光源スペクトル計測装置とそれを用いた計測手順について説明する。
図9は、本発明に係るEUV光源スペクトル計測装置の第2の実施形態について示す図である。図9は本発明に係るEUV光源スペクトル計測装置をEUV光源の一方式であるディスチャージ方式プラズマ光源(DPP)に対して適用した状態を示している。本実施形態では、第1実施形態と異なる点について主に説明する。
2 フィルタ
3 フィルタ
4 光量検出器
5 モータ
6 集光点
7 プラズマ
9 ターゲット回収機構
10 ターゲット
12 レーザー発生装置
14 EUV光源チャンバ
15 ベローズ
16 アパーチャ
17 計測チャンバ
18 光線
19 チャンバ内壁
21 放電電極
22 斜入射ミラー
Claims (6)
- EUV光源から発散される発散光のスペクトルを測定するEUV光源スペクトル計測装置において、
前記発散光を減光する減光手段と、減光された発散光のうち所望の波長帯域の発散光のみを選択する分光手段と、前記選択された発散光の光量を熱エネルギーとして検出する検出手段を有することを特徴とするEUV光源スペクトル計測装置。 - 前記減光手段はピンホールアレイであることを特徴とする請求項1記載のEUV光源スペクトル計測装置。
- 前記ピンホールアレイの開口径は、光量計測を行う前記発散光の波長より大きいことを特徴とする請求項2記載のEUV光源スペクトル計測装置。
- 前記検出手段はカロリーメータであることを特徴とする請求項1記載の計測装置。
- 前記減光手段と前記分光手段と前記検出手段は、共通の真空容器内に設置され、当該真空容器の内壁は当該発散光に対する反射係数が0.1以下となるようにされていることを特徴とする請求項1記載のEUV光源スペクトル計測装置。
- 請求項1乃至5に記載のEUV光源スペクトル計測装置を用いてEUV光源のスペクトル計測をする方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003299649A JP4262032B2 (ja) | 2003-08-25 | 2003-08-25 | Euv光源スペクトル計測装置 |
US10/923,574 US7141798B2 (en) | 2003-08-25 | 2004-08-20 | Spectrum measuring apparatus and method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003299649A JP4262032B2 (ja) | 2003-08-25 | 2003-08-25 | Euv光源スペクトル計測装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005069854A true JP2005069854A (ja) | 2005-03-17 |
JP4262032B2 JP4262032B2 (ja) | 2009-05-13 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003299649A Expired - Fee Related JP4262032B2 (ja) | 2003-08-25 | 2003-08-25 | Euv光源スペクトル計測装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7141798B2 (ja) |
JP (1) | JP4262032B2 (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007004358A1 (ja) * | 2005-07-06 | 2007-01-11 | Nikon Corporation | 露光装置 |
JP2007088267A (ja) * | 2005-09-22 | 2007-04-05 | Komatsu Ltd | 極端紫外光源装置 |
JP2007179881A (ja) * | 2005-12-28 | 2007-07-12 | Ushio Inc | 極端紫外光光源装置 |
WO2007129442A1 (ja) * | 2006-04-25 | 2007-11-15 | Nikon Corporation | 露光装置 |
JP2010147138A (ja) * | 2008-12-17 | 2010-07-01 | Ushio Inc | 極端紫外光光源装置および極端紫外光光源装置の保守方法 |
KR20130042488A (ko) * | 2010-04-09 | 2013-04-26 | 사이머 인코포레이티드 | 레이저 산출 플라즈마 euv 광원에서의 타겟 재료 전달 보호를 위한 시스템 및 방법 |
JP2014093466A (ja) * | 2012-11-06 | 2014-05-19 | Iwasaki Electric Co Ltd | 光学システム |
KR20140061305A (ko) * | 2011-03-30 | 2014-05-21 | 가부시키가이샤 오크세이사쿠쇼 | 방전 램프 |
WO2018229838A1 (ja) * | 2017-06-12 | 2018-12-20 | ギガフォトン株式会社 | 極端紫外光センサユニット及び極端紫外光生成装置 |
JP2019105860A (ja) * | 2011-03-16 | 2019-06-27 | ケーエルエー−テンカー コーポレイション | 薄膜スペクトル純度フィルタコーティングとともに画像センサを使用するeuv化学線レチクル検査システム |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005268035A (ja) * | 2004-03-18 | 2005-09-29 | Canon Inc | Euv光源の評価用評価装置、およびそれを用いた評価方法 |
JP4645358B2 (ja) * | 2004-08-20 | 2011-03-09 | ソニー株式会社 | 撮像装置および撮像方法 |
CN1822239B (zh) * | 2005-02-17 | 2010-06-23 | Ge医疗系统环球技术有限公司 | 滤波器和x射线成像设备 |
JP2006226936A (ja) * | 2005-02-21 | 2006-08-31 | Canon Inc | 測定方法、露光装置及びデバイス製造方法 |
US7812928B2 (en) * | 2005-07-06 | 2010-10-12 | Nikon Corporation | Exposure apparatus |
US7453077B2 (en) * | 2005-11-05 | 2008-11-18 | Cymer, Inc. | EUV light source |
US7709816B2 (en) * | 2007-08-16 | 2010-05-04 | Sematech, Inc. | Systems and methods for monitoring and controlling the operation of extreme ultraviolet (EUV) light sources used in semiconductor fabrication |
US7655925B2 (en) | 2007-08-31 | 2010-02-02 | Cymer, Inc. | Gas management system for a laser-produced-plasma EUV light source |
US8232537B2 (en) * | 2008-12-18 | 2012-07-31 | Asml Netherlands, B.V. | Radiation source, lithographic apparatus and device manufacturing method |
US8368039B2 (en) * | 2010-04-05 | 2013-02-05 | Cymer, Inc. | EUV light source glint reduction system |
RU2519519C2 (ru) * | 2012-07-30 | 2014-06-10 | Открытое акционерное общество "Государственный оптический институт им. С.И.Вавилова" | Фотоприемное устройство для измерения энергетических параметров вакуумного ультрафиолетового излучения |
CN103364401B (zh) * | 2013-07-26 | 2015-08-26 | 中国科学院光电研究院 | 一种极紫外辐照材料测试系统 |
CN105814662B (zh) | 2013-12-13 | 2019-05-03 | Asml荷兰有限公司 | 辐射源、量测设备、光刻系统和器件制造方法 |
TWI715039B (zh) | 2014-06-03 | 2021-01-01 | 荷蘭商Asml荷蘭公司 | 用於補償一曝光誤差的方法、元件製造方法、基板台、微影裝置、控制系統、用於量測反射率的方法、及用於量測一極紫外線輻射劑量的方法 |
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US7038219B2 (en) * | 1996-05-22 | 2006-05-02 | Purepulse Technologies, Inc. | Sterilization of packages and their contents using light |
US6421421B1 (en) * | 2000-05-22 | 2002-07-16 | Plex, Llc | Extreme ultraviolet based on colliding neutral beams |
DE10046218B4 (de) | 2000-09-19 | 2007-02-22 | Carl Zeiss Smt Ag | Projektionsbelichtungsanlage |
US6998620B2 (en) * | 2001-08-13 | 2006-02-14 | Lambda Physik Ag | Stable energy detector for extreme ultraviolet radiation detection |
JP3564104B2 (ja) * | 2002-01-29 | 2004-09-08 | キヤノン株式会社 | 露光装置及びその制御方法、これを用いたデバイスの製造方法 |
DE10204994B4 (de) * | 2002-02-05 | 2006-11-09 | Xtreme Technologies Gmbh | Anordnung zur Überwachung der Energieabstrahlung einer EUV-Strahlungsquelle |
US6657216B1 (en) * | 2002-06-17 | 2003-12-02 | Nanometrics Incorporated | Dual spot confocal displacement sensor |
-
2003
- 2003-08-25 JP JP2003299649A patent/JP4262032B2/ja not_active Expired - Fee Related
-
2004
- 2004-08-20 US US10/923,574 patent/US7141798B2/en not_active Expired - Fee Related
Cited By (17)
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KR101312854B1 (ko) * | 2005-07-06 | 2013-09-30 | 가부시키가이샤 니콘 | 노광 장치 |
WO2007004358A1 (ja) * | 2005-07-06 | 2007-01-11 | Nikon Corporation | 露光装置 |
JP4992714B2 (ja) * | 2005-07-06 | 2012-08-08 | 株式会社ニコン | 露光装置 |
JP2007088267A (ja) * | 2005-09-22 | 2007-04-05 | Komatsu Ltd | 極端紫外光源装置 |
JP4642618B2 (ja) * | 2005-09-22 | 2011-03-02 | 株式会社小松製作所 | 極端紫外光源装置 |
JP2007179881A (ja) * | 2005-12-28 | 2007-07-12 | Ushio Inc | 極端紫外光光源装置 |
WO2007129442A1 (ja) * | 2006-04-25 | 2007-11-15 | Nikon Corporation | 露光装置 |
JP2010147138A (ja) * | 2008-12-17 | 2010-07-01 | Ushio Inc | 極端紫外光光源装置および極端紫外光光源装置の保守方法 |
KR20130042488A (ko) * | 2010-04-09 | 2013-04-26 | 사이머 인코포레이티드 | 레이저 산출 플라즈마 euv 광원에서의 타겟 재료 전달 보호를 위한 시스템 및 방법 |
KR101726281B1 (ko) | 2010-04-09 | 2017-04-12 | 에이에스엠엘 네델란즈 비.브이. | 레이저 산출 플라즈마 euv 광원에서의 타겟 재료 전달 보호를 위한 시스템 및 방법 |
JP2019105860A (ja) * | 2011-03-16 | 2019-06-27 | ケーエルエー−テンカー コーポレイション | 薄膜スペクトル純度フィルタコーティングとともに画像センサを使用するeuv化学線レチクル検査システム |
KR20140061305A (ko) * | 2011-03-30 | 2014-05-21 | 가부시키가이샤 오크세이사쿠쇼 | 방전 램프 |
KR101867527B1 (ko) | 2011-03-30 | 2018-06-15 | 가부시키가이샤 오크세이사쿠쇼 | 측광 장치 및 노광 장치 |
JP2014093466A (ja) * | 2012-11-06 | 2014-05-19 | Iwasaki Electric Co Ltd | 光学システム |
WO2018229838A1 (ja) * | 2017-06-12 | 2018-12-20 | ギガフォトン株式会社 | 極端紫外光センサユニット及び極端紫外光生成装置 |
JPWO2018229838A1 (ja) * | 2017-06-12 | 2020-04-16 | ギガフォトン株式会社 | 極端紫外光センサユニット及び極端紫外光生成装置 |
US11125613B2 (en) | 2017-06-12 | 2021-09-21 | Gigaphoton Inc. | Extreme ultraviolet light sensor unit and extreme ultraviolet light generation apparatus |
Also Published As
Publication number | Publication date |
---|---|
JP4262032B2 (ja) | 2009-05-13 |
US20050045829A1 (en) | 2005-03-03 |
US7141798B2 (en) | 2006-11-28 |
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