JP2005051211A5 - - Google Patents
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- Publication number
- JP2005051211A5 JP2005051211A5 JP2004185758A JP2004185758A JP2005051211A5 JP 2005051211 A5 JP2005051211 A5 JP 2005051211A5 JP 2004185758 A JP2004185758 A JP 2004185758A JP 2004185758 A JP2004185758 A JP 2004185758A JP 2005051211 A5 JP2005051211 A5 JP 2005051211A5
- Authority
- JP
- Japan
- Prior art keywords
- semi
- semiconductor film
- light emitting
- tft
- amorphous semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 44
- 239000012535 impurity Substances 0.000 claims 11
- 239000007789 gas Substances 0.000 claims 6
- 229910021332 silicide Inorganic materials 0.000 claims 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- 125000004429 atom Chemical group 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910052779 Neodymium Inorganic materials 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 238000000354 decomposition reaction Methods 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 239000001307 helium Substances 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 229910052743 krypton Inorganic materials 0.000 claims 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims 1
- 229910052754 neon Inorganic materials 0.000 claims 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 229910052706 scandium Inorganic materials 0.000 claims 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004185758A JP4112527B2 (ja) | 2003-07-14 | 2004-06-24 | システムオンパネル型の発光装置の作製方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003273872 | 2003-07-14 | ||
JP2004185758A JP4112527B2 (ja) | 2003-07-14 | 2004-06-24 | システムオンパネル型の発光装置の作製方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007241214A Division JP4906106B2 (ja) | 2003-07-14 | 2007-09-18 | 発光装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005051211A JP2005051211A (ja) | 2005-02-24 |
JP2005051211A5 true JP2005051211A5 (enrdf_load_stackoverflow) | 2007-08-09 |
JP4112527B2 JP4112527B2 (ja) | 2008-07-02 |
Family
ID=34277499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004185758A Expired - Fee Related JP4112527B2 (ja) | 2003-07-14 | 2004-06-24 | システムオンパネル型の発光装置の作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4112527B2 (enrdf_load_stackoverflow) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4748954B2 (ja) * | 2003-07-14 | 2011-08-17 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
EP1998375A3 (en) | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method |
KR101277606B1 (ko) * | 2006-03-22 | 2013-06-21 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
US7897971B2 (en) * | 2007-07-26 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
WO2009020168A1 (en) * | 2007-08-07 | 2009-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device having the display device, and method for manufacturing thereof |
JP5395384B2 (ja) * | 2007-09-07 | 2014-01-22 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
TWI371223B (en) * | 2008-02-20 | 2012-08-21 | Chimei Innolux Corp | Organic light emitting display device and fabrications thereof and electronic device |
JP5525778B2 (ja) * | 2008-08-08 | 2014-06-18 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8283667B2 (en) * | 2008-09-05 | 2012-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
WO2010032425A1 (ja) | 2008-09-16 | 2010-03-25 | シャープ株式会社 | 半導体素子 |
JP5711463B2 (ja) * | 2009-01-16 | 2015-04-30 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタ |
KR101426515B1 (ko) * | 2010-09-15 | 2014-08-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 표시 장치 |
JP5982147B2 (ja) * | 2011-04-01 | 2016-08-31 | 株式会社半導体エネルギー研究所 | 発光装置 |
KR20190006101A (ko) | 2014-10-28 | 2019-01-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 전자 장치 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61104671A (ja) * | 1984-10-29 | 1986-05-22 | Sharp Corp | 電界効果トランジスタ |
JPH03222370A (ja) * | 1990-01-26 | 1991-10-01 | Mitsubishi Electric Corp | 薄膜トランジスタ |
JPH03233431A (ja) * | 1990-02-09 | 1991-10-17 | Hitachi Ltd | 液晶ディスプレイパネル |
JP3054187B2 (ja) * | 1990-11-09 | 2000-06-19 | 株式会社半導体エネルギー研究所 | 絶縁ゲイト型半導体装置の作製方法 |
JP2997737B2 (ja) * | 1990-12-25 | 2000-01-11 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JPH07131030A (ja) * | 1993-11-05 | 1995-05-19 | Sony Corp | 表示用薄膜半導体装置及びその製造方法 |
JPH10256554A (ja) * | 1997-03-13 | 1998-09-25 | Toshiba Corp | 薄膜トランジスタ及びその製造方法 |
JPH1197705A (ja) * | 1997-09-23 | 1999-04-09 | Semiconductor Energy Lab Co Ltd | 半導体集積回路 |
JPH1197706A (ja) * | 1997-09-23 | 1999-04-09 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP4393662B2 (ja) * | 2000-03-17 | 2010-01-06 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
-
2004
- 2004-06-24 JP JP2004185758A patent/JP4112527B2/ja not_active Expired - Fee Related
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