JP2005051211A5

JP2005051211A5 -

Info

Publication number: JP2005051211A5
Application number: JP2004185758A
Authority: JP
Filing date: 2004-06-24
Publication date: 2007-08-09
Anticipated expiration: 2024-06-24

Claims

A pixel portion provided with a plurality of pixels provided with TFTs for controlling supply of current to the light emitting element, and a scanning line driving circuit,
The scanning line driving circuit has a function of controlling switching of a gate of a TFT that controls supply of current to the light emitting element,
The TFT for controlling the supply of current to the light emitting element and the TFT included in the scanning line driving circuit include a gate insulating film formed on a gate electrode, a semi-amorphous semiconductor film formed on the gate insulating film, A pair of semiconductor films formed on the semi-amorphous semiconductor film,
An impurity element imparting one conductivity is added to the pair of semiconductor films,
The light emitting device is laid out so that one end of the pair of semiconductor films is surrounded by the other of the pair of semiconductor films.

A pixel portion provided with a plurality of pixels provided with TFTs for controlling supply of current to the light emitting element, and a scanning line driving circuit,
The scanning line driving circuit has a function of controlling switching of a gate of a TFT that controls supply of current to the light emitting element,
The TFT for controlling the supply of current to the light emitting element and the TFT included in the scanning line driving circuit include a gate insulating film formed on a gate electrode, a semi-amorphous semiconductor film formed on the gate insulating film, A pair of semiconductor films formed on the semi-amorphous semiconductor film,
The pair of semiconductor films has a stacked structure of a first semiconductor film formed on the semi-amorphous semiconductor film and a second semiconductor film formed on the first semiconductor film,
The semi-amorphous semiconductor film is doped with a first impurity element for threshold control,
The first semiconductor film is a buffer layer;
A second impurity element imparting one conductivity is added to the second semiconductor film,
The light-emitting device, wherein the first impurity element is an impurity element imparting conductivity opposite to that of the second impurity element.

A pixel portion provided with a plurality of pixels provided with TFTs for controlling the supply of current to the light emitting elements, and a scanning line driving circuit,
The scanning line driving circuit has a function of controlling switching of a gate of a TFT that controls supply of current to the light emitting element,
The TFT for controlling the supply of current to the light emitting element and the TFT included in the scanning line driving circuit include a gate insulating film formed on a gate electrode, a semi-amorphous semiconductor film formed on the gate insulating film, A pair of semiconductor films formed on the semi-amorphous semiconductor film,
The pair of semiconductor films has a stacked structure of a first semiconductor film formed on the semi-amorphous semiconductor film and a second semiconductor film formed on the first semiconductor film,
The semi-amorphous semiconductor film is doped with a first impurity element for threshold control,
The first semiconductor film is a buffer layer;
A second impurity element imparting one conductivity is added to the second semiconductor film,
The first impurity element is an impurity element imparting conductivity opposite to that of the second impurity element,
The light emitting device is laid out so that one end of the pair of semiconductor films is surrounded by the other of the pair of semiconductor films.

In any one of Claims 1 thru | or 3,
The light-emitting device, wherein the gate insulating film, the semi-amorphous semiconductor film, and the semiconductor films constituting the pair of semiconductor films are formed continuously.

In any one of Claims 1 thru | or 4,
A silicon nitride film is formed on the semi-amorphous semiconductor film and the pair of semiconductor films,
The oxygen concentration in the semi-amorphous semiconductor film is 5 × 10. ^１９19 atom / cm ^３3 A light emitting device characterized by the following.

In any one of Claims 1 thru | or 6,
The pair of semiconductor films are formed of a semi-amorphous semiconductor.

In the claims 1 to any one of claims 6, light emitting device, wherein the TFT having TFT and the scanning line driving circuit controls the current to the light emitting element is an n-type TFT.

In any one of claims 1 to 7,
The wirings electrically connected to the source or drain of the TFT included in the scanning line driver circuit and the source or drain of the TFT for controlling the supply of current to the light emitting element are aluminum, titanium, tantalum, or molybdenum, Alternatively, a light-emitting device including a nitride of these elements.

In claim 8 ,
A light-emitting device, wherein titanium, silicon, scandium, neodymium, or copper is added to the aluminum at a concentration of 0.5 to 5 atomic%.

In any one of Claims 1 thru | or 9,
A signal line driving circuit;
The TFT included in the signal line driver circuit uses a single crystal or polycrystal semiconductor.

In any one of Claims 1 thru | or 9,
A signal line driving circuit;
The transistor included in the signal line driver circuit uses SOI.

In any one of Claims 1 to 11 ,
The light-emitting device, wherein the TFT for controlling current supply to the light-emitting element has a multi-gate structure.

In any one of Claims 1 to 12 ,
The light-emitting device, wherein the signal line driver circuit includes an analog switch.

In any one of Claims 1 thru / or Claim 13 ,
The light emitting device, wherein the semi-amorphous semiconductor includes crystal grains of 0.5 to 20 nm.

In any one of Claims 1 thru | or 14 ,
The light-emitting device, wherein the semi-amorphous semiconductor contains 1 atom% or more of hydrogen or halogen.

In any one of Claims 1 to 15 ,
The semi-amorphous semiconductor is formed by glow discharge decomposition of a silicide gas.

In any one of Claims 1 thru | or 16 ,
The light-emitting device, wherein the semi-amorphous semiconductor is formed using a silicide gas diluted with one or more gases selected from hydrogen, helium, argon, krypton, and neon.

In any one of Claims 1 thru | or 17 ,
The light emitting device, wherein the semi-amorphous semiconductor is formed using a silicide gas mixed with a carbide gas or a germanium gas.

Electronic devices using the light emitting device according to any one of claims 1 to 18.

20. The electronic device according to claim 19 , wherein the electronic device is a video camera, a digital camera, a goggle type display, a navigation system, an audio playback device, a personal computer, a game device, a portable information terminal, or an image playback device.