JP2005031651A5

JP2005031651A5 -

Info

Publication number: JP2005031651A5
Application number: JP2004179165A
Authority: JP
Filing date: 2004-06-17
Publication date: 2007-04-19
Anticipated expiration: 2024-06-17

Claims

And the door transistor including an amorphous semiconductors,
A connection wiring connected to the source electrode or drain electrode of the transistor;
A light emission device provided on the transistor,
An insulating layer provided so as to surround an end portion of the pixel electrode of the light emitting element ;
Anda auxiliary wiring provided before Symbol insulating layer,
The connection wiring is connected to a pixel electrode of the light emitting element ,
The auxiliary wiring is connected to the counter electrode of the light emitting element through an opening provided in the insulating layer ,
The auxiliary line, a display device which is characterized that you have provided in the same layer as the gate electrode of said transistor.

And the door transistor including an amorphous semiconductors,
A connection wiring connected to the source electrode or drain electrode of the transistor;
A light emission device provided on the transistor,
An insulating layer provided so as to surround an end portion of the pixel electrode of the light emitting element ;
Anda auxiliary wiring provided before Symbol insulating layer,
The connection wiring is connected to a pixel electrode of the light emitting element ,
The auxiliary wiring is connected to the counter electrode of the light emitting element through an opening provided in the insulating layer ,
The auxiliary line, a display device which is characterized that you have provided in the same layer as the connection wiring.

A transistor including an amorphous semiconductor;
A connection wiring connected to the source electrode or drain electrode of the transistor;
A light emitting element provided on the transistor;
An insulating layer provided so as to surround an end portion of the pixel electrode of the light emitting element;
An auxiliary wiring provided on the insulating layer,
The connection wiring is connected to a pixel electrode of the light emitting element,
The auxiliary wiring is connected to the counter electrode of the light emitting element through an opening provided in the insulating layer,
The display device, wherein the auxiliary wiring is provided in the same layer as the pixel electrode of the light emitting element.

A transistor including an organic semiconductor;
A connection wiring connected to the source electrode or drain electrode of the transistor;
A light emitting element provided on the transistor;
An insulating layer provided so as to surround an end portion of the pixel electrode of the light emitting element;
An auxiliary wiring provided on the insulating layer,
The connection wiring is connected to a pixel electrode of the light emitting element,
The auxiliary wiring is connected to the counter electrode of the light emitting element through an opening provided in the insulating layer,
The display device, wherein the auxiliary wiring is provided in the same layer as the gate electrode of the transistor.

A transistor including an organic semiconductor;
A connection wiring connected to the source electrode or drain electrode of the transistor;
A light emitting element provided on the transistor;
An insulating layer provided so as to surround an end portion of the pixel electrode of the light emitting element;
An auxiliary wiring provided on the insulating layer,
The connection wiring is connected to a pixel electrode of the light emitting element,
The auxiliary wiring is connected to the counter electrode of the light emitting element through an opening provided in the insulating layer,
The display device, wherein the auxiliary wiring is provided in the same layer as the connection wiring.

A transistor including an organic semiconductor;
A connection wiring connected to the source electrode or drain electrode of the transistor;
A light emitting element provided on the transistor;
An insulating layer provided so as to surround an end portion of the pixel electrode of the light emitting element;
An auxiliary wiring provided on the insulating layer,
The connection wiring is connected to a pixel electrode of the light emitting element,
The auxiliary wiring is connected to the counter electrode of the light emitting element through an opening provided in the insulating layer,
The display device, wherein the auxiliary wiring is provided in the same layer as the pixel electrode of the light emitting element.

In any one of Claims 1 thru | or 6,
A driving circuit for controlling the transistor and the light emitting element;
The display device is characterized in that the drive circuit includes an N-type transistor that forms a channel portion with an amorphous semiconductor and a P-type transistor that forms a channel portion with an organic semiconductor.

In any one of Claims 1 thru | or 6 ,
A driver IC for controlling the transistor and the light emitting element;
The driver IC, the display device wherein the transistor and the light emitting element is found stuck on a substrate is provided.

In any one of Claims 1 thru | or 6 ,
A driver IC for controlling the transistor and the light emitting element;
The driver IC, the display device, characterized in that the transistor and the light emitting element is connected to the connection film attached to the substrate provided.

In any one of Claims 1 thru | or 9 ,
The display device is characterized in that the transistor is a channel etch type transistor.

In any one of Claims 1 thru | or 9 ,
The display device is characterized in that the transistor is a channel protection type transistor.

In any one of Claims 1 thru | or 9 ,
The transistor has a first gate electrode, a second gate electrode, and a gate insulating film,
The display device , wherein the first gate electrode is provided so as to overlap the second gate electrode with the gate insulating film interposed therebetween.

In any one of Claims 1 to 12 ,
The display device, wherein the light-emitting element and the transistor are provided over a flexible substrate.

In any one of Claims 1 thru / or Claim 13 ,
A display device comprising a reverse bias application circuit for applying a reverse bias to the light emitting element.

Child devices electrodeposition using the display device according to any one of claims 1 to 14.