JPH113048A - Electroluminescent element and device and their production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize the continuous light emission for long time by disposing oppositely a thin film transistor substrate and an electroluminescent substrate and connecting electrode pads and electrodes of one side of one pair of electrodes through adhesive electric connecting bodies. SOLUTION: Relating to an electroluminescent body (EL) element a thin film transistor(TFT) substrate 3 and an EL substrate 6 are faced each other and the EL electrode pad 62 of the EL substrate 6 side and the drain electrode pad 22 of the TFT substrate side are oppositely disposed and electrical connection between both electrodes is performed with an adhesive electric connecting body 71. This adhesive electric connecting body 71 is obtained by using conductive adhesive in which conductive particles such as carbon particles, silver particles, cupper particles and so forth are dispersedly incorporated in epoxy or phenolic thermal hardening adhesive and by coating it on the EL substrate 6 or the TFT substrate or on prescribed positions of both substrates and by drying it. Moreover, adhesive electric insulator 72 is provided at the outside part of the adhesive electric connecting body 71.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electroluminescent element and a device applicable to a display device, a light emitting source or a printer head of an electrophotographic printer, and a method of manufacturing the same. In particular, the present invention relates to an element and an apparatus using an organic electroluminescent body suitable for full-color display on a large screen, and a method for manufacturing the same.

[0002]

2. Description of the Related Art For example, Japanese Patent Application Laid-Open Nos.
136360, JP-A-6-188074,
JP-A-6-192654 and JP-A-8-41452
The one disclosed in Japanese Patent Application Laid-Open Publication No. H10-260, 1993 is known.

Further, it is known that these organic electroluminescent bodies are driven by, for example, a thin film transistor described in JP-A-8-241048.

[0004]

However, in order to drive the organic electroluminescent element by the thin film transistor, it is necessary to provide the organic electroluminescent element for each drain electrode pad of the thin film transistor. It was necessary to pattern three electroluminescent bodies for emitting blue, green and red primary colors on a thin film transistor substrate. Because it has a large uneven surface compared to the body thin film,
It is difficult to pattern the electroluminescent thin film with high definition and high density, and furthermore, the low level based on the concentration of the two kinds of functional elements of the transistor and the electroluminescent body on the thin film transistor substrate. Had problems with productivity.

[0005] In addition, the organic electroluminescent body has a problem that the continuous light emission time is shortened by applying a long-time DC voltage. In particular, JP-A-8-24
In the case of driving by the thin film transistor disclosed in Japanese Patent No. 1048, etc., a direct current voltage is continuously applied to the organic electroluminescent element, which causes a problem that deterioration of the organic electroluminescent element is accelerated.

An object of the present invention is to provide an element using an organic electroluminescence body suitable for full-color display on a large screen which solves the above problems, and a method for manufacturing the same.

Another object of the present invention is to provide an electroluminescent device which enables continuous light emission for a long time.

[0008]

According to the present invention, there are firstly provided a thin film transistor arranged along a plurality of rows and columns, a gate line commonly connecting the gates of a plurality of thin film transistors on the row for each row, For each column, a source line commonly connected to sources of a plurality of thin film transistors on the column, a drain electrode pad connected to each drain of the thin film transistor,
And a transistor substrate provided with a capacitor connected to the drain electrode pad, and an electroluminescent device provided along a plurality of rows and columns, including a pair of electrodes and an electroluminescent body disposed between the pair of electrodes. A thin-film transistor substrate and an electro-luminescence substrate are arranged so that the drain electrode pad and the electro-luminescence body face each other, and the drain electrode pad and one of the pair of electrodes are bonded. An electroluminescent element connected through a conductive electrical connector having a first characteristic, and secondly, a first thin film transistor arranged along a plurality of rows and columns, and for each row, The gate lines connecting the gates of the plurality of first thin film transistors in common, and the source of the plurality of first thin film transistors on the column are shared for each column. A second thin film transistor connected to each drain of the first thin film transistor, and a capacitor connected to the second thin film transistor. The gate of the second thin film transistor is connected to the drain of the first thin film transistor, 2. Connect a drain electrode pad to each drain of the thin film transistor,
And a transistor substrate formed by connecting the source of the second thin film transistor to one electrode of the capacitor; and a pair of electrodes arranged along a plurality of rows and columns, and an electroluminescence disposed between the pair of electrodes. A thin-film transistor substrate and an electro-luminescence substrate, such that the drain electrode pad and the electro-luminescence body face each other, and a drain electrode pad and a pair of electrodes. An electroluminescent element formed by connecting one of the electrodes through an adhesive electrical connector has a second feature, and thirdly, a thin film transistor arranged along a plurality of rows and columns, A gate line commonly connecting the gates of a plurality of thin film transistors on the row, and a plurality of thin film transistors on the column for each column. A source line commonly connected to the source, a drain electrode pad connected to each drain of the thin film transistor, and a transistor substrate provided with a capacitor connected to the drain electrode pad are prepared and arranged along a plurality of rows and columns. Preparing an electroluminescent substrate having a pair of electrodes and an electroluminescent body disposed between the pair of electrodes, and providing an adhesive electrode to at least one of a drain electrode pad of the transistor substrate and the electroluminescent body. A third method of manufacturing an electroluminescent device in which a thin film transistor substrate and an electroluminescent substrate are arranged so as to face each other so that a connection body is arranged and a drain electrode pad and an electroluminescent body face each other, and are overlapped with each other. And the fourth feature
Thin film transistors arranged along a plurality of rows and columns, a gate line commonly connecting the gates of the plurality of thin film transistors on the row for each row, and a common source for the plurality of thin film transistors on the column for each column. Preparing a transistor substrate having a source line connected to each drain, a drain electrode pad connected to each drain of the thin film transistor, and a capacitor connected to the drain electrode pad, arranged along a plurality of rows and columns, Providing an electroluminescent substrate comprising an electrode and an electroluminescent body disposed between the pair of electrodes; providing an adhesive electrical connection to at least one of a drain electrode pad of the transistor substrate and the electroluminescent body; Arranging body, drain electrode pad of transistor substrate and electro-luminescence Arranging an adhesive electrical insulator on at least one of the insulator bodies at a position to be an outer peripheral portion of the adhesive electrical connection body; and And a method of manufacturing an electroluminescent element having a process of superposing and superposing an electroluminescent substrate on a substrate, the fourth method being characterized in that the thin film transistor is arranged along a plurality of rows and columns. , Line by line,
A gate line commonly connecting the gates of the plurality of thin film transistors on the row, a source line commonly connecting the sources of the plurality of thin film transistors on the column for each column, a drain electrode pad connected to each drain of the thin film transistor, And preparing a transistor substrate having a capacitor connected to the drain electrode pad, comprising a pair of electrodes arranged along a plurality of rows and columns, and a pair of electrodes and an electroluminescent body disposed between the pair of electrodes. Providing an electroluminescent substrate, arranging an adhesive electrical connection on at least one of the drain electrode pad of the transistor substrate and the electroluminescent body,
Arranging an adhesive electrical insulator on at least one of the luminescent bodies at a position to be an outer peripheral portion of the adhesive electrical connection body; And the step of superposing the electroluminescent substrate and the overlapping, and the step of evacuating the space between the thin film transistor substrate and the electroluminescent substrate to heat and cure the adhesive electrical connection body and the adhesive electrostatic insulator. The fifth aspect of the present invention relates to a method for manufacturing an electroluminescent element having a fifth feature. Sixth, a first switching element arranged along a plurality of rows and columns, and a plurality of first switching elements on a row for each row. A first wiring commonly connecting the first terminals of the elements, a second wiring commonly connecting the second terminals of the plurality of first switching elements on the column for each column, One electrode connected to each third terminal of one switching element, the other electrode and an electroluminescent element having an electroluminescent body provided between one and the other electrode, connected to each third terminal , A second switching element provided between one electrode of the electroluminescent element and the third terminal of the first switching element, a third wiring connected to one electrode of the electroluminescent element, and the third wiring The third provided inside
A first on signal pulse for turning on the first switching element is applied to the switching element and the first wiring in the predetermined row, and a first on signal pulse for turning off the first switching element is applied to the first wiring in another row. An off signal pulse is applied, a forward biased information signal pulse corresponding to the information is applied to the second wiring in synchronization with the first on signal pulse, and when the first on signal pulse for the predetermined row is applied, Or later
Applying a second ON signal pulse to the control line of the second switching element for a predetermined period of time to turn on the switching element, thereby activating writing to each electroluminescent body on the row; and After the predetermined period, a second off signal pulse for turning off the second switching element is applied to the control line, and the third switching element is turned on when, before or after the application of the second off signal pulse. To the control line of the third switching element, whereby a reverse bias voltage is applied between the third wiring and the other electrode of the electroluminescent element. An electroluminescent device having driving means for operating a reverse bias applying means for setting has a sixth feature, and seventhly, a plurality of rows and columns. A first thin film transistor arranged, a first line in which the gates of the plurality of first thin film transistors on the row are connected in common for each row, and a second line in which the sources of the plurality of first thin film transistors in the column are connected in common for each column Wiring, one electrode connected to each drain of the first thin film transistor,
An electroluminescent element having the other electrode and an electroluminescent body provided between one and the other electrodes, provided between the drain and one electrode of the electroluminescent element, connected by a gate; A second thin film transistor, a capacitor connected to each drain,
A first switching element provided between one electrode of the electroluminescent element and a drain terminal of the second thin film transistor, a third wiring connected to one electrode of the electroluminescent element, provided in the third wiring; A first on signal pulse for turning on the first thin film transistor is applied to the second switching element and the first wiring in a predetermined row, and a second on signal pulse for turning off the first thin film transistor is applied to the first wiring in another row. Applying a 1-off signal pulse, applying a forward-biased information signal pulse corresponding to the information to the second wiring in synchronization with the first on-signal pulse, and applying the first on-signal pulse for the predetermined row. Before or after, a second ON signal pulse for turning on the first switching element is applied to the control line of the first switching element for a predetermined period of time. Activating a write to each electroluminescent body on the row, and applying a second off signal pulse to the control line after the predetermined period to turn off the first switching element; At the time of applying the off signal pulse, before or after that, a third on signal pulse for turning on the second switching element is applied to the control line of the third switching element. An electroluminescence device having a driving means for operating a reverse bias applying means for setting a reverse bias voltage to be applied to the other electrode of the luminescence element, wherein the electroluminescence device has a seventh feature, A plurality of switching elements arranged along a plurality of rows and columns, a first wiring commonly connecting the first terminals of a plurality of switching elements on a row for each row, and a plurality of switches on a column for each column. A second wiring connecting the second terminals of the switching elements in common; an electrode connected to each third terminal of the switching elements, the other electrode, and an electroluminescent body provided between one and the other electrodes; And a scanning selection pulse for selecting at least one of the plurality of rows is applied to a first wiring corresponding to the selected row, and the scanning is performed in synchronization with a scanning selection signal. An information signal pulse for causing a forward bias state to the electroluminescent element in accordance with the information on the two lines is applied to each second line, and the next scan to the first line corresponding to the selected row is performed. Before the start of the application of the selection signal or the subsequent scanning selection signal, a bias voltage that causes a reverse bias state to the electroluminescent element is applied through the third wiring to the element. An electroluminescence device having a driving means for applying a voltage to the electroluminescence device has an eighth feature.

The electrochromic material is a medium that emits light of three primary colors of blue, green and red, and is preferably an organic electroluminescent material.

[0010] The adhesive electric connection body preferably contains conductive particles dispersed and contained in an adhesive, and particularly contains a silane coupling agent.

It is preferable to adopt an adhesive structure in which an adhesive electrical insulator is disposed on the outer periphery of the adhesive electrical connection body.

Preferably, the thin film transistor uses a polysilicon semiconductor, a crystalline silicon semiconductor, a microcrystalline silicon semiconductor or an amorphous silicon semiconductor.

It is preferable that at least one of the pair of electrodes sandwiching the electroluminescent body is a ZnO transparent electrode having a texture structure.

According to the sixth, seventh, and eighth features of the present invention, in active matrix driving, an
It was possible to apply an alternating voltage to the luminescent element, which, in particular, could greatly extend the long-term continuous emission time of the organic electroluminescent body.

The predetermined period used in the present invention is 1/4 to one vertical scanning period (one frame period or one field period).
The period is 3/4, preferably 1/3 to 2/3, and most preferably about 1/2.

The time average voltage of the forward bias voltage and the reverse bias voltage used in the present invention is preferably set to about zero.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described with reference to the drawings.
Hereinafter, the thin film transistor is described as “TFT”, and the electroluminescent body is stored as “EL”.

FIG. 1 shows an active matrix 4-terminal TFT-E.
1 shows a schematic view of an L element. The element of each pixel includes two TFTs, a storage capacitor, and an EL element. A key feature of the four-terminal scheme is the ability to separate the addressing signal from the EL excitation signal. The EL element is selected via the logic TFT (T1), and the excitation power for the EL element is the power TFT (T1).
Controlled by 2). The storage capacitor allows it to retain the excitation power on the addressed EL element once selected. Thus, the circuit ignores the time that the EL element is allocated for addressing and
% To operate with a duty cycle close to%.

The gate lines Y _j and Y _{j + 1} are preferably arranged in a large number such as 640 lines, 1120 lines, and gate pulses are sequentially applied. The gate pulse may be interlaced scanning or non-interlaced scanning.

The source lines X _j , X _{j + 1} , X _{j + 2} are
Preferably, a large number of wires such as 840 wires or 1280 wires are wired, and an information signal pulse of a voltage set according to video data is applied in synchronization with a gate pulse.

In the figure, REL is a red light emitting EL, GEL is a green light emitting EL, BEL is a blue light emitting EL, and the source line X
_A red information signal pulse is applied to _j , a green information pulse is applied to X _{j + 1} , and a red information pulse is applied to X _{j + 2} . Thus, full-color display is performed.

FIG. 2 is a plan view showing a typical example of the TFT substrate 3 of the present invention. TFT1 corresponds to T1 in FIG.
FT2 corresponds to T2 in FIG. 1, capacitor 21 corresponds to Cs in FIG. 1, and drain electrode pad 22 corresponds to each EL in FIG.
Corresponds to the drain connection electrode of the T ₂ of the respective.

FIG. 3 is a sectional view taken along line AA 'of FIG. FIG. 4 is a sectional view taken along the line BB 'of FIG.

[0024] As TFT1 and TFT2 used in the present invention has a source connected to the bus 24 to the n ⁺ polysilicon, and a drain connected to the n ⁺ polysilicon, a gate insulating film disposed across the I-type polycrystalline silicon film (Plasma-enhanced CVD) -SiO ₂ film 32 was arranged, and a transistor structure in which a gate bus was connected to n ⁺ polysilicon was adopted.

The present invention is not limited to the transistor structure described above, but can be applied to any of a staggered structure and a coplanar structure using amorphous silicon or microcrystalline silicon semiconductor.

Further, according to the present invention, S
MOS with O1 (silicon on insulator) structure
It can be applied to a transistor.

The capacitor Cs is formed by the pair of capacitor electrodes 41 and 42 of FIG. 4 and the SiO ₂ film 33 provided between the pair of capacitor electrodes. The capacitor electrode is formed of Al or the like and is connected to the ground bus 25, and the capacitor electrode 42 is formed of an n ⁺ polysilicon film and is connected to the drain of the TFT2.

As the gate bus 23 and the source bus 24, a chromium / aluminum laminated wiring is preferably used.

As passivation 34, plasma C
Depending on the VD, a silicon nitride film is suitable.

As the drain electrode pad 22, a metal film such as aluminum or silver can be used in order to have a reflection performance, but a transparent conductive film such as ITO or ZnO may be used.

FIG. 5 is a plan view of the EL substrate 6 used in the present invention, and FIG. 6 is a sectional view taken along the line CC 'of FIG.

The EL substrate 6 includes a glass substrate 61, a transparent electrode 51 which is a pair of electrodes provided on the glass substrate 61, an EL electrode pad 62 made of aluminum or the like forming a reflection surface, and an EL provided between the pair of electrodes. Composed of

As the EL 52, an organic EL is preferable.
In particular, components constituting REL, GEL and BEL are arranged.

Specific REL, GEL and BEL are listed below, but the present invention is not limited to these, and inorganic EL can be applied instead of organic EL.

The material for the organic EL of the present invention is Scozz
afava's EPA 349, 265 (1990); Ta
ng U.S. Pat. No. 4,356,429; VanS.
lyke et al., US Pat. No. 4,539,507;
U.S. Patent No. 4,720,43 to AnSlyke et al.
2; U.S. Patent No. 4,769,292 to Tang et al.
No .: U.S. Pat. No. 4,885,211 to Tang et al.
No. 4,950,95 to Perry et al.
0; U.S. Pat. No. 5,059,8 to Littman et al.
No. 61; VanSlyke U.S. Pat. No. 5,044.
U.S. Pat. No. 5,073,446; VanSlyke et al., U.S. Pat. No. 5,059,862; VanSlyke et al., U.S. Pat. No. 5,061,617; VanSlyk.
e, U.S. Pat. No. 5,151,629; Tang et al., U.S. Pat. No. 5,294,869; Tang et al., U.S. Pat. No. 5,294,870) can be used. The EL layer includes an organic hole injection / migration band that contacts the anode, and an electron injection / migration band that forms a junction with the organic hole injection / migration band. The hole injection and migration zone is formed from a single material or multiple materials,
An anode and a hole injection layer in contact with a continuous hole transfer layer interposed between the hole injection layer and the electron injection and transfer zone. Similarly, the electron injection and transfer zone is formed from a single material or multiple materials and is in contact with the anode and a continuous electron transfer layer interposed between the electron injection layer and the hole injection and transfer zone. Consists of The recombination and luminescence of holes and electrons occurs in the electron injection and migration bands adjacent to the junction of the electron injection and migration bands and the hole injection and migration bands. The compound forming the organic EL layer is typically deposited by evaporation, but can also be deposited by other conventional techniques.

In a preferred embodiment, the organic material comprising the hole injection layer has the following general formula:

[0037]

[Outside 1]

Where: Q is N or C—R M is a metal, metal oxide, or metal halide T1, T2 represents hydrogen or an unsaturated six-membered ring containing a substituent such as alkyl or halogen. Meet together. Preferred alkyl moieties contain about 1 to 6 carbon atoms while phenyl constitutes a preferred allyl moiety.

In a preferred embodiment, the hole transfer layer is an aromatic tertiary amine. A preferred subclass of aromatic tertiary amines includes tetraallyl diamine having the formula:

[0040]

[Outside 2]

Where Are is an arylene group and n is 1
To 4, and Ar, R ₇ , R ₈ , and R ₉ are each selected allyl groups. In a preferred embodiment, the luminescence, electron injection and migration bands are metal oxinoid (o
xinoid) compounds. Preferred examples of metal oxinoid compounds have the following general formula:

[0042]

[Outside 3]

Here, R ₂ -R ₇ represent the possibility of substitution. In another preferred embodiment, the metal oxinoid compound has the formula:

[0044]

[Outside 4]

Wherein R ₂ -R ₇ are as defined above, wherein L 1 -L 5 contain 12 or fewer carbon atoms intensively and each independently represents a hydrogen or carbohydrate group of 1 to 12 carbon atoms. L1 and L2 together or L
2, L3 may together form an associated benzo ring. In another preferred embodiment, the metal oxinoid compound has the formula:

[0046]

[Outside 5]

Here, R ₂ -R ₆ represent hydrogen or other substitutability. The above examples merely represent certain preferred organic materials used in the electroluminescent layer. They are not intended to limit the field of view of the invention, which is generally indicative of an organic electroluminescent layer. As can be seen from the above example, the organic EL material contains a coordination compound having an organic ligand.

In the next process step, the EL anode 62 is deposited on the surface of the device. The EL anode is made of any conductive material, but is preferably made of a material having a work function of 4 eV or less (see U.S. Pat. No. 4,885,211 to Tang et al.). Low work function materials are preferred for the anode. Because they readily emit electrons into the electron transfer layer. The lowest work function metals are alkali metals, however, their instability in air makes their use impractical under certain conditions. The anode material is typically deposited by chemical vapor deposition, but other suitable deposition techniques are applicable. A particularly preferred material for the EL anode has been found to be a 10: 1 (atomic ratio) magnesium: silver alloy. Preferably, the anode is applied as a continuous layer over the entire surface of the display panel. In another embodiment, the EL anode comprises a lower layer of low work function metal adjacent to the organic electron injection and transfer zone, overlaying the low work function metal and protecting the low work function metal from oxygen and humidity. And a protective layer.

Typically, the anode material is opaque and the cathode material is transparent, so that light is transmitted through the cathode material. The practical balance between light transmission and technical conductivity is typically a thickness in the range of 5-25 nm.

In the present invention, a plastic film can be used instead of the glass substrate 61 used for the EL substrate 6, and ITO and ZnO can be used for the transparent electrode 51.

In order to increase the surface area of the EL 52, the transparent electrode 51 can adopt a texture structure having fine irregularities on the surface. In order to form a suitable texture structure, it is possible to use a sputtering method in which the substrate temperature at the time of depositing ZnO is set at a relatively high humidity such as 250 ° C. to 300 ° C.

The non-EL 52 region of the transparent electrode 51
A light shielding mask (not shown) can be provided. As a light-shielding mask at this time, a metal film such as an aluminum film or a cloth film, or a chromium oxide film or an aluminum oxide film for preventing the generation of light reflected by these metal films is used alone or is laminated on the metal film. Can be provided.
Since the metal film substantially lowers the resistance of the transparent electrode 51, it is preferable to stack a metal film on the transparent electrode 51 and further provide a metal oxide film thereon.

The transparent electrode 51 is set to ground or a predetermined DC voltage while the EL element of the present invention is being driven.

FIG. 7 is a sectional view of the EL device of the present invention. In the EL element, the TFT substrate 3 and the EL substrate 6 are opposed to each other.
2 and the drain electrode pad 22 on the TFT substrate 3 side are arranged to face each other, and an electrical connection is made between both electrodes by an adhesive electric connection body 71.

The adhesive electrical connector 71 is made of a conductive adhesive in which conductive particles such as carbon particles, silver particles and copper particles are dispersed and contained in an epoxy or phenolic thermosetting adhesive. By adopting a screen printing method, an offset printing method, a dispenser coating method, or the like, it can be obtained by applying to a predetermined position of the EL substrate 6 or the TFT substrate 3 or both of them and drying.

In the above-mentioned conductive adhesive, N- (2-aminoethyl) -3-aminopropylmethyldimethoxysilane and N- (2-aminoethyl) -3-in order to enhance the interfacial adhesive strength. Aminopropyltrimethoxysilane, 3
A silane coupling agent such as -aminopropyltrimethoxysilane, 3-aminopropylmethyldiethoxysilane, or 3-glycidoxypropyltrimethoxysilane.

As another example of the adhesive electric connection body 71,
And solder.

An adhesive electric insulator 72 is provided on the outer periphery of the above-mentioned adhesive electric connection body 71. The adhesive electric insulator 72 is formed by applying an epoxy-based or phenol-based insulating adhesive to predetermined positions of the EL substrate 6 and / or the TFT substrate by a method such as an offset printing method, a screen printing method, or a dispenser coating method. , Dried. At this time, when applying the insulating adhesive and the conductive adhesive, an insulating adhesive is provided on one of the EL substrate 6 and the TFT substrate 3, and the substrate on which the insulating adhesive is not provided is provided. It is preferable to use a manufacturing method in which a conductive adhesive is provided.

In the present invention, instead of the above-mentioned adhesive electric insulator 72, an insulator having no adhesive force, for example, an organic solvent, particularly a high-boiling organic solvent, a nematic liquid crystal, a cholesteric liquid crystal, a smectic liquid crystal, etc. A liquid insulator such as a liquid crystal can also be used.

Further, the above-mentioned adhesive electric insulator 72 or non-adhesive electric insulator may contain a coloring material such as a coloring pigment or a paint so as to have light-shielding curing.

In manufacturing the EL device of the present invention, a TFT
A conductive adhesive is applied on the drain electrode pad 22 of the substrate 3 using, for example, an offset printing method, and an insulating contact agent is applied to a region other than the EL electrode pad 62 of the EL substrate 6 (the outer peripheral portion of the EL electrode pad 62). For example, by applying an offset printing method, the drain electrode pad 22 and the EL electrode pad 6
The TFT substrate 3 and the EL substrate 6 are overlapped such that the two oppose each other, and then the air between the TFT substrate 3 and the EL substrate 6 is evacuated by a normal method. It is possible to adopt a method of applying pressure bonding heating and fixing closely.

FIG. 8 shows an evacuation apparatus used when the air at the above intervals is exhausted. The TFT substrate 3 and the EL substrate 6 are placed on a stage 81 in a superposed state, and are shown by a sheet 83 such as a plastic film between a pair of O-rings 82 and 83 arranged and fixed around the stage 81. And then operate the evacuation pump 84,
The air in the seat 83 is exhausted.

FIG. 9 is an equivalent circuit of another EL element of the present invention.

FIGS. 10 and 11 show an embodiment corresponding to the sixth, seventh and eighth features of the present invention.

G ₁ , G ₂ ,... G _n (n gate scanning lines)
Is a switching element Tr composed of thin film transistors
A gate line connected to the _first gate, a gate-on pulses sequentially applied (high level voltage), by sequential application of the gate-on pulse, the selection of the write line is performed. The gate-on pulse G _{1 serving as} the scan selection signal,
G ₂ ,..., G _n may be applied by an interlaced scanning method or may be applied by a non-interlaced scanning method. In the case of driving by the interlaced scanning method, interlaced scanning may be performed by skipping one line or two or more lines.

S ₁₁ , S ₂₁ ,... S _n1 are control pulses for controlling the EL light emission time.
Is applied to the gate of the switching devices Tr ₃ was a thin film transistor, G _1, G _2, ... upon application of a gate-on pulse of G _n (high level voltage), or before it, or after, is applied, the EL at that time is set to a forward bias state.

[0067] _{S 12, S 22, ... S} n2 is allowed to interrupt the light emission of the EL, but instead, the bias control line RB _1, RB ₂ ... P
To apply a reverse bias to the EL from B _n, upon application of a gate-off pulse to the switching devices Tr ₃ (low level voltage), or before it, or after, switching devices Tr which is a thin film transistor Gate on pulse (high level voltage) for ₄ gates
Is applied.

[0068] bias control line RB _1, RB ₂ ... PB _n is,
As shown in FIG. 12, it is preferable to install on the EL substrate 6. At this time, the bias control line RB _1, RB ₂ ... PB _n is
A transparent electrode 5 is set in parallel with each row of the plurality of switching elements Tr _{1 serving as} an active matrix driving element.
11, 512... 51n are provided, and the respective transparent electrodes 511, 51 are provided.
Every 2 ... 51n, through the gate array 121, set to switch to one of the ground independently and the reverse bias voltage V _R. Thereby, at the time of EL emission, EL
Are driven by setting the potential so that the device becomes a forward bias state.

D ₁ , D ₂ , D ₃ , D ₄ ,... D _m (m
This information line) is an information signal pulses corresponding to data to be applied in accordance with the information on the source of the switching devices Tr ₁ on the column, setting a forward bias state with respect to EL (BEL, GEL, REL) .

According to the sixth, seventh and eighth features of the present invention, an AC voltage is applied to each EL, and a continuous long-time light emission display can be realized.

The present invention is suitable for application to a light-emitting display layer. Instead of using a laser signal or an LED signal or a liquid crystal shutter array signal (solid-state scanner signal) used as an optical signal generator for an electrophotographic printer. Can also be used.

[0072]

According to the present invention, a high-definition, high-density, long-life EL pixel can be obtained over a large area with high productivity.

Further, according to the present invention, it is possible to obtain high-luminance EL light emission, and to obtain a high-definition, high-density EL color display that emits light with high luminance continuously for a long time based on high productivity. Could be obtained.

Further, according to the present invention, an EL which realizes stability against impact and display stability in long-term use.
A color display was obtained.

[Brief description of the drawings]

FIG. 1 is an equivalent circuit diagram of an EL element of the present invention.

FIG. 2 is a plan view of an EL pixel on a TFT substrate side used in the EL element of the present invention.

FIG. 3 is a sectional view taken along line AA ′ of FIG. 2;

FIG. 4 is a sectional view taken along line BB ′ of FIG. 3;

FIG. 5 is a plan view of an EL pixel on the EL substrate side used in the EL element of the present invention.

FIG. 6 is a sectional view taken along the line CC ′ of FIG. 5;

FIG. 7 is a cross-sectional view of the EL element of the present invention.

FIG. 8 is a sectional view of an evacuation apparatus used in the method of the present invention.

FIG. 9 is an equivalent circuit diagram of another EL element of the present invention.

FIG. 10 is an equivalent circuit diagram used in another embodiment of the EL device of the present invention.

FIG. 11 is a timing chart of driving used in the present invention.

FIG. 12 is a plan view of an EL substrate used in the present invention.

[Explanation of symbols]

T1 first TFT T2 second TFT Cs capacitor REL red light emitting EL GEL green light emitting EL BEL blue emitting EL 21 capacitor 22 drain electrode pad 23 gate bus 24 source bus 25 ground bus 3 TFT substrate 31 glass substrate 32 PECVD film 33 SiO ₂ film 34 passivation film 41, 42 capacitor electrode 6 EL substrate 51, 511, 512, 51n transparent electrode 52 EL 61 glass substrate 62 EL electrode pad 71 adhesive electrical connector 72 adhesive electrical insulator 81 stage 82, 83 O-ring 83 sheet 84 vacuum pump 121 gate array _{RB 1, RB 2, ... PB} n bias control line V _R reverse bias potential

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yuichi Hashimoto 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Akihiro Senoo 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside the corporation

Claims (58)

[Claims] 1. A thin film transistor arranged along a plurality of rows and columns, a gate line commonly connecting gates of a plurality of thin film transistors on the row for each row, and a plurality of thin film transistors on the column for each column. A source line having a source connected in common, a drain electrode pad connected to each drain of the thin film transistor, and a transistor substrate having a capacitor connected to the drain electrode pad, and a plurality of rows and columns are arranged, and a pair of An electroluminescent substrate having an electrode and an electroluminescent body disposed between the pair of electrodes; and a thin film transistor substrate and an electroluminescent substrate such that the drain electrode pad and the electroluminescent body face each other. The substrate is opposed to the substrate, and an adhesive electrical connection is made between the drain electrode pad and one of the pair of electrodes. An electroluminescent element connected through a continuum. 2. The electroluminescent device according to claim 1, wherein the electroluminescent body includes a medium emitting three primary colors of blue, green and red. 3. The electroluminescent device according to claim 1, wherein the electroluminescent body includes an organic medium emitting three primary colors of blue, green and red. 4. The electroluminescent device according to claim 1, wherein the adhesive electrical connection body is formed by dispersing and containing conductive particles in an adhesive. 5. The electroluminescent device according to claim 1, wherein the adhesive electrical connection body comprises conductive particles dispersed in an adhesive and a silane coupling agent. . 6. The electroluminescent device according to claim 1, wherein an electric insulator is arranged on an outer peripheral portion of the adhesive electric connection body. 7. The electroluminescent device according to claim 1, wherein an adhesive electric insulator is arranged on an outer peripheral portion of the adhesive electric connection body. 8. The electroluminescent element according to claim 1, wherein an electrical insulator containing a colored body is arranged on an outer peripheral portion of said adhesive electrical connection body. 9. The electroluminescent device according to claim 1, wherein a liquid electrical insulator is disposed on an outer peripheral portion of said adhesive electrical connection body. 10. The electroluminescent device according to claim 1, wherein said thin film transistor has a polysilicon semiconductor layer. 11. The electroluminescent device according to claim 1, wherein said thin film transistor comprises an amorphous silicon semiconductor or a microcrystalline silicon semiconductor. 12. The electroluminescent device according to claim 1, wherein said thin film transistor comprises a crystalline silicon semiconductor. 13. The electroluminescent element according to claim 1, wherein at least one of the pair of electrodes sandwiching the electroluminescent body is a transparent electrode having a texture structure. 14. The electroluminescent device according to claim 1, wherein at least one of the pair of electrodes sandwiching the electroluminescent body is a ZnO transparent electrode having a texture structure. 15. A first arrangement arranged along a plurality of rows and columns.
A thin film transistor, a gate line commonly connecting the gates of the plurality of first thin film transistors on the row, a source line commonly connecting the sources of the plurality of first thin film transistors on the column, A second thin film transistor connected to each drain of the thin film transistor; and a capacitor connected to the second thin film transistor, wherein a gate of the second thin film transistor is connected to a drain of the first thin film transistor, and a drain is connected to each drain of the second thin film transistor. An electrode pad is connected, and a transistor substrate formed by connecting the source of the second thin film transistor and one electrode of the capacitor, and a plurality of rows and columns are arranged, and a pair of electrodes and a pair of electrodes are provided. An electro-luminescent device with an arranged electro-luminescent body
A thin film transistor substrate and an electroluminescent substrate are disposed so that a drain electrode pad and an electroluminescent body are opposed to each other, and a drain electrode pad and one electrode of a pair of electrodes are provided. An electroluminescent element connected through an adhesive electrical connector. 16. The electroluminescent body,
The electroluminescent device according to claim 15, further comprising a medium that emits three primary colors of blue, green, and red. 17. The electroluminescent body,
The electro-optical device according to claim 15, further comprising an organic material medium that emits three primary colors of blue, green, and red.
Luminescent element. 18. The electroluminescent device according to claim 15, wherein the adhesive electrical connection body is formed by dispersing conductive particles in an adhesive. 19. The electroluminescent device according to claim 15, wherein said adhesive electric connection body contains conductive particles dispersed in an adhesive and a silane coupling agent. . 20. The electroluminescent device according to claim 15, wherein an adhesive electric insulator is arranged on an outer peripheral portion of the adhesive electric connection body. 21. The electroluminescent device according to claim 15, wherein said thin film transistor has a polysilicon semiconductor layer. 22. The electroluminescent device according to claim 15, wherein said thin film transistor comprises an amorphous silicon semiconductor or a microcrystalline silicon semiconductor. 23. The electroluminescent device according to claim 15, wherein said thin film transistor has a crystalline silicon semiconductor. 24. A thin film transistor arranged along a plurality of rows and columns, a gate line commonly connecting the gates of a plurality of thin film transistors on the row for each row, and a plurality of thin film transistors on the column for each column. A source line commonly connected to a source, a drain electrode pad connected to each drain of the thin film transistor, and a transistor substrate provided with a capacitor connected to the drain electrode pad are prepared, arranged along a plurality of rows and columns, An electroluminescent substrate including a pair of electrodes and an electroluminescent body disposed between the pair of electrodes is provided. At least one of a drain electrode pad of the transistor substrate and the electroluminescent body is adhered to the electroluminescent substrate. Arrange the connection body, and place it so that the drain electrode pad and the electroluminescence body face each other. A method for manufacturing an electroluminescence device, comprising: arranging a film transistor substrate and an electroluminescence substrate so as to face each other and superimposing them. 25. The electroluminescent body,
The method for manufacturing an electroluminescent device according to claim 24, further comprising a medium emitting three primary colors of blue, green and red. 26. The electroluminescent body,
The electro-optical device according to claim 24, further comprising an organic material medium that emits three primary colors of blue, green, and red.
A method for manufacturing a luminescence element. 27. The method for manufacturing an electroluminescent device according to claim 24, wherein said adhesive electrical connection body is formed by dispersing and containing conductive particles in an adhesive. 28. The electroluminescent device according to claim 27, wherein the adhesive electric connection body contains conductive particles dispersed in an adhesive and a silane coupling agent. Manufacturing method. 29. A thin film transistor arranged along a plurality of rows and columns, a gate line commonly connecting the gates of a plurality of thin film transistors on the row for each row, and a plurality of thin film transistors on the column for each column. A step of preparing a transistor substrate having a source line commonly connected to a source, a drain electrode pad connected to each drain of the thin film transistor, and a capacitor connected to the drain electrode pad, arranged along a plurality of rows and columns; Providing a pair of electrodes and an electroluminescent substrate comprising an electroluminescent body disposed between the pair of electrodes,
Disposing an adhesive electrical connection on at least one of the drain electrode pad and the electroluminescent body of the transistor substrate; and providing an adhesive electrical insulation on at least one of the drain electrode pad and the electroluminescent body of the transistor substrate. Arranging a body at a position to be an outer peripheral portion of the adhesive electric connection body, and a thin-film transistor substrate and an electro-luminescence substrate are arranged to face each other such that the drain electrode pad and the electro-luminescence body are opposed to each other; A method for producing an electroluminescent element, comprising a step of superposing. 30. A thin film transistor arranged along a plurality of rows and columns, a gate line commonly connecting the gates of a plurality of thin film transistors on the row for each row, and a plurality of thin film transistors on the column for each column. A step of preparing a transistor substrate having a source line commonly connected to a source, a drain electrode pad connected to each drain of the thin film transistor, and a capacitor connected to the drain electrode pad, arranged along a plurality of rows and columns; Providing a pair of electrodes and an electroluminescent substrate comprising an electroluminescent body disposed between the pair of electrodes,
Disposing an adhesive electrical connection on at least one of the drain electrode pad and the electroluminescent body of the transistor substrate; and providing an adhesive electrical insulation on at least one of the drain electrode pad and the electroluminescent body of the transistor substrate. Arranging the thin film transistor substrate and the electroluminescent substrate so that the drain electrode pad and the electroluminescent body are opposed to each other; Manufacturing an electroluminescent device, comprising a step of combining and a step of evacuating the thin film transistor substrate and the electroluminescent substrate and heating and curing the adhesive electric connection body and the adhesive electrostatic insulator. Law. 31. A first arrangement arranged along a plurality of rows and columns.
A switching element, for each row, a first wiring in which the first terminals of a plurality of first switching elements on a row are connected in common, and for each column, a second terminal for a plurality of first switching elements in a column are connected in common. Of each of the second wiring and the first switching element
An electroluminescent element having one electrode connected to each terminal, the other electrode and an electroluminescent body provided between the one and the other electrodes, a capacitor connected to each third terminal, and electroluminescence A second switching element provided between one electrode of the element and a third terminal of the first switching element, a third wiring connected to one electrode of the electroluminescent element, and a third switching provided in the third wiring A first on signal pulse for turning on the first switching element is applied to the element and the first wiring of the predetermined row, and a first off signal for turning off the first switching element is applied to the first wiring of another row. A signal pulse is applied, a forward biased information signal pulse corresponding to information is applied to the second wiring in synchronization with the first ON signal pulse, and the first ON pulse for the predetermined row is applied. At the time of application, before or after that, a second ON signal pulse for turning on the second switching element is applied to the control line of the second switching element for a predetermined period, whereby each of the electro- Activating the writing to the luminescence body, and applying a second off signal pulse for turning off the second switching element to the control line after the predetermined period, and when the second off signal pulse is applied, Or after that, a third ON signal pulse for turning on the third switching element is applied to the control line of the third switching element, whereby the third switching element is turned on.
An electroluminescence device having driving means for operating a reverse bias applying means set so that a reverse bias voltage is applied between the wiring and the other electrode of the electroluminescence element. 32. The electroluminescent body,
The electroluminescent device according to claim 31, further comprising a medium that emits three primary colors of blue, green, and red. 33. The electroluminescent body,
The electro-optical device according to claim 31, further comprising an organic material medium emitting three primary colors of blue, green, and red.
Luminescence device. 34. The electroluminescent device according to claim 31, wherein said first, second and third switching elements are thin film transistors. 35. The first, second, and third switching elements are thin film transistors, the first terminal is a gate terminal, the second terminal is a source terminal, and the third terminal is a drain terminal. The electroluminescent device according to claim 31, wherein: 36. The predetermined period is one of one vertical scanning period.
The electroluminescent device according to claim 31, wherein the period is / 4 to 3/4. 37. The predetermined period is one of one vertical scanning period.
32. The electroluminescent device according to claim 31, wherein the period is / 3 to 2/3. 38. The electroluminescence device according to claim 31, wherein the predetermined period is a period that is about a half of one vertical scanning period. 39. The electroluminescent device according to claim 31, wherein the predetermined period is a period of １ ／ to ／ of one frame period or one field period. 40. The electroluminescent device according to claim 31, wherein the predetermined period is one third to two thirds of one frame period or one field period. 41. The electroluminescent device according to claim 31, wherein the predetermined period is approximately one half of one frame period or one field period. 42. The time average voltage of the forward bias voltage and the reverse bias voltage is set to about zero.
An electroluminescent device as described. 43. A first arrangement arranged along a plurality of rows and columns.
For each thin film transistor, for each row, a first wiring commonly connecting the gates of a plurality of first thin film transistors on the row, for each column,
A second wiring commonly connecting the sources of the plurality of first thin film transistors on the column, one electrode connected to each drain of the first thin film transistor, the other electrode, and electroluminescence provided between one and the other electrode; An electroluminescent element having a sense body, provided between the drain and one electrode of the electroluminescent element;
A second thin film transistor connected by a gate, a capacitor connected to each drain, a first switching element provided between one electrode of the electroluminescence element and a drain terminal of the second thin film transistor, and one of the electroluminescence elements A third wiring connected to the third electrode,
A first on signal pulse for turning on the first thin film transistor is applied to the second switching element provided in the wiring and the first wiring in a predetermined row, and the first thin film transistor is turned off to the first wiring in another row. A first off signal pulse for the predetermined row is applied in synchronization with the first on signal pulse, and a forward bias information signal pulse corresponding to the information is applied to the second wiring. At the time of application, before or after that, a second ON signal pulse for turning on the first switching element is applied to the control line of the first switching element for a predetermined period, whereby each of the electro- Activating the writing to the luminescence body, and applying a second off signal pulse for turning off the first switching element to the control line after the predetermined period, the second off signal pulse Upon application, it is applied in the previous, or the third on-signal pulse for the second switching devices turned on by subsequent control line of the third switching devices,
Thereby, an electroluminescence device having a driving means for operating a reverse bias applying means which is set so that a reverse bias voltage is applied between the third wiring and the other electrode of the electroluminescence element. . 44. The electroluminescent body,
44. The electroluminescent device according to claim 43, further comprising a medium emitting three primary colors of blue, green and red. 45. The electroluminescent body,
The electro-optical device according to claim 43, further comprising an organic material medium that emits three primary colors of blue, green, and red.
Luminescence device. 46. The method according to claim 4, wherein the first and second switching elements are thin film transistors.
3. The electroluminescent device according to 3. 47. The electroluminescent device according to claim 43, wherein the source of the second thin film transistor and one electrode of the capacitor are set to the same voltage. 48. The electro-optical device according to claim 43, wherein a source of said second thin film transistor and one electrode of said capacitor are connected by a fourth wiring, and further comprising means for applying a voltage to said fourth wiring. Luminescence device. 49. The predetermined period is one of one vertical scanning period.
44. The electroluminescent device according to claim 43, wherein the period is / 4 to 3/4. 50. The predetermined period is one of one vertical scanning period.
44. The electroluminescent device according to claim 43, wherein the period is / 3 to 2/3. 51. The electroluminescent device according to claim 40, wherein the predetermined period is a period of about one half of one vertical scanning period. 52. The electroluminescent device according to claim 43, wherein said predetermined period is a period of １ ／ to ／ of one frame period or one field period. 53. The electroluminescent device according to claim 43, wherein the predetermined period is one third to two thirds of one frame period or one field period. 54. The electroluminescent device according to claim 43, wherein the predetermined period is a period of about one half of one frame period or one field period. 55. A time average voltage of the forward bias voltage and the reverse bias voltage is set to about zero.
An electroluminescent device as described. 56. A switching element arranged along a plurality of rows and columns, a first wiring commonly connecting the first terminals of a plurality of switching elements on a row for each row, and a plurality of switching elements on a column for each column. Wiring commonly connected to the second terminals of the switching element, and one electrode connected to each third terminal of the switching element, the other electrode, and electroluminescence provided between the one and the other electrodes Applying an electroluminescent element having a body, and a scan selection pulse for selecting at least one of the plurality of rows to a first wiring corresponding to the selected row, and synchronizing with a scan selection signal. An information signal pulse for generating a forward bias state for the electroluminescent element in accordance with the information on the second wiring is applied to each second wiring, and an information signal pulse is applied to the first wiring corresponding to the selected row. Before the start of the application of the scan selection signal or the subsequent scan selection signal, a bias voltage that causes a reverse bias state to the electroluminescent body is applied to the electroluminescent body through the third wiring. An electroluminescent device having a driving means. 57. The electroluminescent device according to claim 56, wherein the third terminal is connected to a capacitor. 58. The electroluminescent device according to claim 56, wherein a time average voltage of the forward bias and the reverse bias is set to about zero.