JP2004524707A - 波長制御を有する注入シード方式ｆ２レーザ - Google Patents

波長制御を有する注入シード方式ｆ２レーザ Download PDF

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JP2004524707A
JP2004524707A JP2002580451A JP2002580451A JP2004524707A JP 2004524707 A JP2004524707 A JP 2004524707A JP 2002580451 A JP2002580451 A JP 2002580451A JP 2002580451 A JP2002580451 A JP 2002580451A JP 2004524707 A JP2004524707 A JP 2004524707A
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Prior art keywords
laser
pulse
discharge
high voltage
gas
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JP2004524707A5 (https=
Inventor
サンドストロム　リチャード　エル
ネス　リチャード　エム
パートロ　ウィリアム　エヌ
アレクサンダー アイ エルショフ
エクハード ディ オンケルス
チョンフン オー
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Cymer Inc
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Cymer Inc
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Priority claimed from US09/829,475 external-priority patent/US6765945B2/en
Priority claimed from US09/848,043 external-priority patent/US6549551B2/en
Priority claimed from US09/854,097 external-priority patent/US6757316B2/en
Application filed by Cymer Inc filed Critical Cymer Inc
Publication of JP2004524707A publication Critical patent/JP2004524707A/ja
Publication of JP2004524707A5 publication Critical patent/JP2004524707A5/ja
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    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
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    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
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    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2251—ArF, i.e. argon fluoride is comprised for lasing around 193 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2256—KrF, i.e. krypton fluoride is comprised for lasing around 248 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2258—F2, i.e. molecular fluoride is comprised for lasing around 157 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2308—Amplifier arrangements, e.g. MOPA
    • H01S3/2325—Multi-pass amplifiers, e.g. regenerative amplifiers

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Lasers (AREA)
JP2002580451A 2001-04-09 2002-03-29 波長制御を有する注入シード方式ｆ２レーザ Pending JP2004524707A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US09/829,475 US6765945B2 (en) 1999-09-27 2001-04-09 Injection seeded F2 laser with pre-injection filter
US09/848,043 US6549551B2 (en) 1999-09-27 2001-05-03 Injection seeded laser with precise timing control
US09/854,097 US6757316B2 (en) 1999-12-27 2001-05-11 Four KHz gas discharge laser
US09/855,310 US6556600B2 (en) 1999-09-27 2001-05-14 Injection seeded F2 laser with centerline wavelength control
PCT/US2002/009625 WO2002082601A1 (en) 2001-04-09 2002-03-29 Injection seeded f2 laser with wavelength control

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JP2004524707A5 JP2004524707A5 (https=) 2005-06-30

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WO (1) WO2002082601A1 (https=)

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JP2008078372A (ja) * 2006-09-21 2008-04-03 Komatsu Ltd 露光装置用レーザ装置
KR20220064412A (ko) * 2019-11-07 2022-05-18 사이머 엘엘씨 광학 소스에 의해 생성된 출력 광 빔의 스펙트럼 특성 제어
JP2023500594A (ja) * 2019-11-07 2023-01-10 サイマー リミテッド ライアビリティ カンパニー 光源によって生成される出力光ビームの分光特性の制御
KR102669463B1 (ko) * 2019-11-07 2024-05-29 사이머 엘엘씨 광학 소스에 의해 생성된 출력 광 빔의 스펙트럼 특성 제어
JP7679365B2 (ja) 2019-11-07 2025-05-19 サイマー リミテッド ライアビリティ カンパニー 光源によって生成される出力光ビームの分光特性の制御

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KR100863976B1 (ko) 2008-10-16
TW535338B (en) 2003-06-01
WO2002082601A1 (en) 2002-10-17
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