JP2004524681A - 放射線エミッタ装置及びその製造方法 - Google Patents

放射線エミッタ装置及びその製造方法 Download PDF

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Publication number
JP2004524681A
JP2004524681A JP2002561259A JP2002561259A JP2004524681A JP 2004524681 A JP2004524681 A JP 2004524681A JP 2002561259 A JP2002561259 A JP 2002561259A JP 2002561259 A JP2002561259 A JP 2002561259A JP 2004524681 A JP2004524681 A JP 2004524681A
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emitting device
radiation
radiation emitting
emitter
region
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Japanese (ja)
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JP2004524681A5 (zh
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ロバーツ，ジョン・ケイ
リース，スペンサー・ディー
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ジェンテクス・コーポレーション
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Publication of JP2004524681A publication Critical patent/JP2004524681A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
JP2002561259A 2001-01-31 2002-01-23 放射線エミッタ装置及びその製造方法 Pending JP2004524681A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26548901P 2001-01-31 2001-01-31
PCT/US2002/001761 WO2002061803A2 (en) 2001-01-31 2002-01-23 Radiation emitter devices and method of making the same

Publications (2)

Publication Number Publication Date
JP2004524681A true JP2004524681A (ja) 2004-08-12
JP2004524681A5 JP2004524681A5 (zh) 2005-05-26

Family

ID=23010659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002561259A Pending JP2004524681A (ja) 2001-01-31 2002-01-23 放射線エミッタ装置及びその製造方法

Country Status (8)

Country Link
EP (1) EP1358668A4 (zh)
JP (1) JP2004524681A (zh)
KR (1) KR20030095391A (zh)
CN (1) CN1502128A (zh)
AU (1) AU2002243628A1 (zh)
CA (1) CA2430747C (zh)
MX (1) MXPA03006413A (zh)
WO (1) WO2002061803A2 (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007280714A (ja) * 2006-04-05 2007-10-25 Matsushita Electric Works Ltd スイッチ装置用ランプモジュールおよびその製造方法
JP2007324213A (ja) * 2006-05-30 2007-12-13 Stanley Electric Co Ltd 半導体表示装置
JP2009538531A (ja) * 2006-05-23 2009-11-05 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド 照明装置、および、製造方法
JP2011055013A (ja) * 2006-12-15 2011-03-17 Cree Inc 発光ダイオードのための反射性マウント基板
JP2011216919A (ja) * 2007-03-30 2011-10-27 Seoul Semiconductor Co Ltd 低い熱抵抗を有する発光ダイオードランプ
JP2017045929A (ja) * 2015-08-28 2017-03-02 日亜化学工業株式会社 発光装置の製造方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6921927B2 (en) * 2003-08-28 2005-07-26 Agilent Technologies, Inc. System and method for enhanced LED thermal conductivity
EP1617488A1 (en) * 2004-07-12 2006-01-18 Nan Ya Plastics Corporation Light emitting diode with improved heat dissipation and its manufacturing method
DE102005028748A1 (de) * 2004-10-25 2006-05-04 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung emittierendes Halbleiterbauelement und Bauelementgehäuse
GB2466633A (en) * 2008-12-12 2010-07-07 Glory Science Co Ltd Method of manufacturing a light emitting unit
CN101901794B (zh) * 2009-05-25 2012-08-15 光宏精密股份有限公司 具反射及导体金属层的塑料导线架结构及其制备方法
EP2478412A4 (en) * 2009-09-15 2013-06-05 3M Innovative Properties Co LIGHT EMITTING DIODE PROJECTOR AND METHOD
US9385285B2 (en) * 2009-09-17 2016-07-05 Koninklijke Philips N.V. LED module with high index lens
CN102623626B (zh) * 2012-03-30 2015-12-09 刘敬梅 一种led及其模块、显示屏
CN103256508A (zh) * 2013-05-17 2013-08-21 浙江福斯特电子科技有限公司 星星状led光源和制作上述led光源的方法
CN105340090B (zh) * 2013-06-28 2018-11-09 亮锐控股有限公司 发光二极管器件
JP6454698B2 (ja) 2013-06-28 2019-01-16 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 発光ダイオードデバイス
DE102014202220B3 (de) 2013-12-03 2015-05-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung eines Deckelsubstrats und gehäustes strahlungsemittierendes Bauelement

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2127239A5 (zh) * 1971-03-01 1972-10-13 Radiotechnique Compelec
US3760237A (en) * 1972-06-21 1973-09-18 Gen Electric Solid state lamp assembly having conical light director
US4267559A (en) * 1979-09-24 1981-05-12 Bell Telephone Laboratories, Incorporated Low thermal impedance light-emitting diode package
SE501428C2 (sv) * 1993-06-24 1995-02-13 Cma Microdialysis Res Ab Fluorescensdetektor jämte bäranordning för utbytbar provkuvett vid en fluorescensdetektor
JPH11103097A (ja) * 1997-07-30 1999-04-13 Rohm Co Ltd 半導体発光素子
JP3447604B2 (ja) * 1999-02-25 2003-09-16 株式会社シチズン電子 表面実装型発光ダイオード及びその製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007280714A (ja) * 2006-04-05 2007-10-25 Matsushita Electric Works Ltd スイッチ装置用ランプモジュールおよびその製造方法
JP4622922B2 (ja) * 2006-04-05 2011-02-02 パナソニック電工株式会社 スイッチ装置用ランプモジュールおよびその製造方法
JP2009538531A (ja) * 2006-05-23 2009-11-05 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド 照明装置、および、製造方法
JP2007324213A (ja) * 2006-05-30 2007-12-13 Stanley Electric Co Ltd 半導体表示装置
JP2011055013A (ja) * 2006-12-15 2011-03-17 Cree Inc 発光ダイオードのための反射性マウント基板
US9178121B2 (en) 2006-12-15 2015-11-03 Cree, Inc. Reflective mounting substrates for light emitting diodes
JP2011216919A (ja) * 2007-03-30 2011-10-27 Seoul Semiconductor Co Ltd 低い熱抵抗を有する発光ダイオードランプ
JP2017045929A (ja) * 2015-08-28 2017-03-02 日亜化学工業株式会社 発光装置の製造方法

Also Published As

Publication number Publication date
WO2002061803A3 (en) 2002-10-03
KR20030095391A (ko) 2003-12-18
EP1358668A4 (en) 2006-04-19
CA2430747C (en) 2008-05-20
MXPA03006413A (es) 2004-04-20
EP1358668A2 (en) 2003-11-05
AU2002243628A1 (en) 2002-08-12
CA2430747A1 (en) 2002-08-08
CN1502128A (zh) 2004-06-02
WO2002061803A2 (en) 2002-08-08

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