MXPA03006413A - Dispositivos emisores de radiacion y metodo para elaborar los mismos. - Google Patents

Dispositivos emisores de radiacion y metodo para elaborar los mismos.

Info

Publication number
MXPA03006413A
MXPA03006413A MXPA03006413A MXPA03006413A MXPA03006413A MX PA03006413 A MXPA03006413 A MX PA03006413A MX PA03006413 A MXPA03006413 A MX PA03006413A MX PA03006413 A MXPA03006413 A MX PA03006413A MX PA03006413 A MXPA03006413 A MX PA03006413A
Authority
MX
Mexico
Prior art keywords
radiation emitter
zone
making
same
radiation
Prior art date
Application number
MXPA03006413A
Other languages
English (en)
Spanish (es)
Inventor
D Reese Spencer
Original Assignee
Gentex Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23010659&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=MXPA03006413(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Gentex Corp filed Critical Gentex Corp
Publication of MXPA03006413A publication Critical patent/MXPA03006413A/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
MXPA03006413A 2001-01-31 2002-01-23 Dispositivos emisores de radiacion y metodo para elaborar los mismos. MXPA03006413A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26548901P 2001-01-31 2001-01-31
PCT/US2002/001761 WO2002061803A2 (en) 2001-01-31 2002-01-23 Radiation emitter devices and method of making the same

Publications (1)

Publication Number Publication Date
MXPA03006413A true MXPA03006413A (es) 2004-04-20

Family

ID=23010659

Family Applications (1)

Application Number Title Priority Date Filing Date
MXPA03006413A MXPA03006413A (es) 2001-01-31 2002-01-23 Dispositivos emisores de radiacion y metodo para elaborar los mismos.

Country Status (8)

Country Link
EP (1) EP1358668A4 (zh)
JP (1) JP2004524681A (zh)
KR (1) KR20030095391A (zh)
CN (1) CN1502128A (zh)
AU (1) AU2002243628A1 (zh)
CA (1) CA2430747C (zh)
MX (1) MXPA03006413A (zh)
WO (1) WO2002061803A2 (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6921927B2 (en) * 2003-08-28 2005-07-26 Agilent Technologies, Inc. System and method for enhanced LED thermal conductivity
EP1617488A1 (en) * 2004-07-12 2006-01-18 Nan Ya Plastics Corporation Light emitting diode with improved heat dissipation and its manufacturing method
DE102005028748A1 (de) * 2004-10-25 2006-05-04 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung emittierendes Halbleiterbauelement und Bauelementgehäuse
JP4622922B2 (ja) * 2006-04-05 2011-02-02 パナソニック電工株式会社 スイッチ装置用ランプモジュールおよびその製造方法
WO2007139780A2 (en) * 2006-05-23 2007-12-06 Cree Led Lighting Solutions, Inc. Lighting device and method of making
JP2007324213A (ja) * 2006-05-30 2007-12-13 Stanley Electric Co Ltd 半導体表示装置
US9178121B2 (en) * 2006-12-15 2015-11-03 Cree, Inc. Reflective mounting substrates for light emitting diodes
KR101346342B1 (ko) * 2007-03-30 2013-12-31 서울반도체 주식회사 낮은 열저항을 갖는 발광 다이오드 램프
GB2466633A (en) * 2008-12-12 2010-07-07 Glory Science Co Ltd Method of manufacturing a light emitting unit
CN101901794B (zh) * 2009-05-25 2012-08-15 光宏精密股份有限公司 具反射及导体金属层的塑料导线架结构及其制备方法
EP2478412A4 (en) * 2009-09-15 2013-06-05 3M Innovative Properties Co LIGHT EMITTING DIODE PROJECTOR AND METHOD
US9385285B2 (en) * 2009-09-17 2016-07-05 Koninklijke Philips N.V. LED module with high index lens
CN102623626B (zh) * 2012-03-30 2015-12-09 刘敬梅 一种led及其模块、显示屏
CN103256508A (zh) * 2013-05-17 2013-08-21 浙江福斯特电子科技有限公司 星星状led光源和制作上述led光源的方法
CN105340090B (zh) * 2013-06-28 2018-11-09 亮锐控股有限公司 发光二极管器件
JP6454698B2 (ja) 2013-06-28 2019-01-16 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 発光ダイオードデバイス
DE102014202220B3 (de) 2013-12-03 2015-05-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung eines Deckelsubstrats und gehäustes strahlungsemittierendes Bauelement
JP6458685B2 (ja) * 2015-08-28 2019-01-30 日亜化学工業株式会社 発光装置の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2127239A5 (zh) * 1971-03-01 1972-10-13 Radiotechnique Compelec
US3760237A (en) * 1972-06-21 1973-09-18 Gen Electric Solid state lamp assembly having conical light director
US4267559A (en) * 1979-09-24 1981-05-12 Bell Telephone Laboratories, Incorporated Low thermal impedance light-emitting diode package
SE501428C2 (sv) * 1993-06-24 1995-02-13 Cma Microdialysis Res Ab Fluorescensdetektor jämte bäranordning för utbytbar provkuvett vid en fluorescensdetektor
JPH11103097A (ja) * 1997-07-30 1999-04-13 Rohm Co Ltd 半導体発光素子
JP3447604B2 (ja) * 1999-02-25 2003-09-16 株式会社シチズン電子 表面実装型発光ダイオード及びその製造方法

Also Published As

Publication number Publication date
WO2002061803A3 (en) 2002-10-03
KR20030095391A (ko) 2003-12-18
EP1358668A4 (en) 2006-04-19
CA2430747C (en) 2008-05-20
JP2004524681A (ja) 2004-08-12
EP1358668A2 (en) 2003-11-05
AU2002243628A1 (en) 2002-08-12
CA2430747A1 (en) 2002-08-08
CN1502128A (zh) 2004-06-02
WO2002061803A2 (en) 2002-08-08

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