New! View global litigation for patent families

WO2002061803A3 - Radiation emitter devices and method of making the same - Google Patents

Radiation emitter devices and method of making the same

Info

Publication number
WO2002061803A3
WO2002061803A3 PCT/US2002/001761 US0201761W WO2002061803A3 WO 2002061803 A3 WO2002061803 A3 WO 2002061803A3 US 0201761 W US0201761 W US 0201761W WO 2002061803 A3 WO2002061803 A3 WO 2002061803A3
Authority
WO
Grant status
Application
Patent type
Prior art keywords
radiation
emitter
zone
permeability
strength
Prior art date
Application number
PCT/US2002/001761
Other languages
French (fr)
Other versions
WO2002061803A2 (en )
Inventor
John K Roberts
Spencer D Reese
Original Assignee
Gentex Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01327Intermediate phases, i.e. intermetallics compounds
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12042LASER
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12044OLED
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/641Heat extraction or cooling elements characterized by the materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/52Details of devices
    • H01L51/5262Arrangements for extracting light from the device

Abstract

A radiation emitting device of the present invention includes at least one radiation emitter (35), first and second electrical lead (16-14) electrically coupled to the radiation emitter (35), and an integral encapsulant (12) configured to encapsulate the radiation emitter (35) and portions of the electrical leads. The encapsulant (12) has at least a first zone (30) and a second zone (32), where the second zone exhibits at least one different characteristic from the first zone. This different characteristics is one selected from the group consisting of mechanical strength, thermal conductivity, thermal expansion coefficient, specific heat, oxygen permeability, moisture permeability, adhesive strength, and trnsmittance. The radiation emitter is preferably a LED.
PCT/US2002/001761 2001-01-31 2002-01-23 Radiation emitter devices and method of making the same WO2002061803A3 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US26548901 true 2001-01-31 2001-01-31
US60/265,489 2001-01-31

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2002561259A JP2004524681A5 (en) 2002-01-23
US10490755 US20040180713A1 (en) 2001-09-26 2002-01-23 Game arrangement
CA 2430747 CA2430747C (en) 2001-01-31 2002-01-23 Radiation emitter devices and method of making the same
KR20037009965A KR20030095391A (en) 2001-01-31 2002-01-23 Radiation emitter device and method of making the same
EP20020709127 EP1358668A4 (en) 2001-01-31 2002-01-23 Radiation emitter devices and method of making the same

Publications (2)

Publication Number Publication Date
WO2002061803A2 true WO2002061803A2 (en) 2002-08-08
WO2002061803A3 true true WO2002061803A3 (en) 2002-10-03

Family

ID=23010659

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/001761 WO2002061803A3 (en) 2001-01-31 2002-01-23 Radiation emitter devices and method of making the same

Country Status (5)

Country Link
EP (1) EP1358668A4 (en)
KR (1) KR20030095391A (en)
CN (1) CN1502128A (en)
CA (1) CA2430747C (en)
WO (1) WO2002061803A3 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6921927B2 (en) * 2003-08-28 2005-07-26 Agilent Technologies, Inc. System and method for enhanced LED thermal conductivity
EP1617488A1 (en) * 2004-07-12 2006-01-18 Nan Ya Plastics Corporation Light emitting diode with improved heat dissipation and its manufacturing method
DE102005028748A1 (en) * 2004-10-25 2006-05-04 Osram Opto Semiconductors Gmbh Electromagnetic radiation-emitting semiconductor component and component housing
JP2009538531A (en) * 2006-05-23 2009-11-05 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド Illumination device, and a method
US9178121B2 (en) 2006-12-15 2015-11-03 Cree, Inc. Reflective mounting substrates for light emitting diodes
GB0822653D0 (en) * 2008-12-12 2009-01-21 Glory Science Co Ltd Method of manufacturing a light emitting unit
CN101901794B (en) 2009-05-25 2012-08-15 光宏精密股份有限公司 Plastic lead frame structure with reflective and conductor metal layer and preparation method thereof
CN102549493A (en) * 2009-09-15 2012-07-04 3M创新有限公司 Led projector and method
US9385285B2 (en) 2009-09-17 2016-07-05 Koninklijke Philips N.V. LED module with high index lens
CN102623626B (en) * 2012-03-30 2015-12-09 刘敬梅 And one kind led module, a display screen
CN103256508A (en) * 2013-05-17 2013-08-21 浙江福斯特电子科技有限公司 Star-like LED light source and manufacturing method thereof
CN105340090A (en) * 2013-06-28 2016-02-17 皇家飞利浦有限公司 Light emitting diode device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3739241A (en) * 1971-03-01 1973-06-12 Philips Corp Electroluminescent semiconductor device containing current controlling rectifying device
US4267559A (en) * 1979-09-24 1981-05-12 Bell Telephone Laboratories, Incorporated Low thermal impedance light-emitting diode package
US5700428A (en) * 1993-06-24 1997-12-23 Cma/Microdialuysis Research Ab Fluorescence detector, and a device for supporting a replacable sample cuvette in a fluorescence detector
US6084252A (en) * 1997-03-10 2000-07-04 Rohm Co., Ltd. Semiconductor light emitting device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3760237A (en) * 1972-06-21 1973-09-18 Gen Electric Solid state lamp assembly having conical light director
JP3447604B2 (en) * 1999-02-25 2003-09-16 株式会社シチズン電子 A surface-mount type light emitting diode and a manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3739241A (en) * 1971-03-01 1973-06-12 Philips Corp Electroluminescent semiconductor device containing current controlling rectifying device
US4267559A (en) * 1979-09-24 1981-05-12 Bell Telephone Laboratories, Incorporated Low thermal impedance light-emitting diode package
US5700428A (en) * 1993-06-24 1997-12-23 Cma/Microdialuysis Research Ab Fluorescence detector, and a device for supporting a replacable sample cuvette in a fluorescence detector
US6084252A (en) * 1997-03-10 2000-07-04 Rohm Co., Ltd. Semiconductor light emitting device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1358668A4 *

Also Published As

Publication number Publication date Type
WO2002061803A2 (en) 2002-08-08 application
EP1358668A2 (en) 2003-11-05 application
CN1502128A (en) 2004-06-02 application
JP2004524681A (en) 2004-08-12 application
CA2430747C (en) 2008-05-20 grant
EP1358668A4 (en) 2006-04-19 application
CA2430747A1 (en) 2002-08-08 application
KR20030095391A (en) 2003-12-18 application

Similar Documents

Publication Publication Date Title
US20040061206A1 (en) Discrete package having insulated ceramic heat sink
US7217005B2 (en) Light emitting diode lamp module
US6505954B2 (en) Safe light emitting device
US20060054914A1 (en) Composite heat conductive structure for a LED package
JP2008010591A (en) Light emitting device, manufacturing method thereof, package, and substrate for mounting light emitting element
JP2007214522A (en) Light source device and illuminator using same
JP2002203989A (en) Light emitting device and its manufacturing method
US20040238930A1 (en) Surface-mountable light-emitting diode structural element
JP2000031546A (en) Led aggregate module
JPS61218139A (en) Semiconductor device
WO2002103813A1 (en) Nitride semiconductor light emitting element and light emitting device using it
WO2002089219A1 (en) Light-emitting apparatus
WO1998010508A1 (en) Semiconductor device
WO2003058726A1 (en) Semiconductor light-emitting device, light-emitting display, method for manufacturing semiconductor light-emitting device, and method for manufacturing light-emitting display
US20010040300A1 (en) Semiconductor package with heat dissipation opening
US7582496B2 (en) LED package using Si substrate and fabricating method thereof
WO2012095758A2 (en) Lighting device
JPH0487213A (en) Anisotropic conductive film and its manufacture
JPH11289098A (en) Optoelectronic semiconductor device and illuminating lamp or lamp
JPH03142847A (en) Semiconductor integrated circuit device
WO2001015242A1 (en) Method for the production of an optoelectronic component with a lens
US20090159904A1 (en) Light source device, light source module, and method of making the light source device
US3148305A (en) Electric incandescent lamp with a rectifying diode mounted within the lamp base
US20110090699A1 (en) Bulb-type lighting source
JPS60178647A (en) Semiconductor device

Legal Events

Date Code Title Description
AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

AK Designated states

Kind code of ref document: A2

Designated state(s): AT AU BG BR CA CH CN CZ DE DK ES FI GB GE HU ID IL IN JP KR MX NO NZ PL PT RO RU SE SG SI SK TR UA YU ZA

121 Ep: the epo has been informed by wipo that ep was designated in this application
AK Designated states

Kind code of ref document: A3

Designated state(s): AT AU BG BR CA CH CN CZ DE DK ES FI GB GE HU ID IL IN JP KR MX NO NZ PL PT RO RU SE SG SI SK TR UA YU ZA

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

WWE Wipo information: entry into national phase

Ref document number: 2430747

Country of ref document: CA

WWE Wipo information: entry into national phase

Ref document number: 2002709127

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: PA/a/2003/006413

Country of ref document: MX

WWE Wipo information: entry into national phase

Ref document number: 2002561259

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 1020037009965

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 028042891

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 2002709127

Country of ref document: EP

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

WWP Wipo information: published in national office

Ref document number: 1020037009965

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 10490755

Country of ref document: US