JP2004509429A5 - - Google Patents

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Publication number
JP2004509429A5
JP2004509429A5 JP2002508822A JP2002508822A JP2004509429A5 JP 2004509429 A5 JP2004509429 A5 JP 2004509429A5 JP 2002508822 A JP2002508822 A JP 2002508822A JP 2002508822 A JP2002508822 A JP 2002508822A JP 2004509429 A5 JP2004509429 A5 JP 2004509429A5
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JP
Japan
Prior art keywords
antenna
conductors
plasma reactor
plasma
symmetry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002508822A
Other languages
English (en)
Japanese (ja)
Other versions
JP5160717B2 (ja
JP2004509429A (ja
Filing date
Publication date
Priority claimed from US09/611,169 external-priority patent/US6685798B1/en
Priority claimed from US09/610,800 external-priority patent/US6409933B1/en
Priority claimed from US09/611,168 external-priority patent/US6414648B1/en
Priority claimed from US09/611,170 external-priority patent/US6694915B1/en
Priority claimed from US09/611,345 external-priority patent/US6462481B1/en
Application filed filed Critical
Priority claimed from PCT/US2001/020717 external-priority patent/WO2002005308A2/en
Publication of JP2004509429A publication Critical patent/JP2004509429A/ja
Publication of JP2004509429A5 publication Critical patent/JP2004509429A5/ja
Application granted granted Critical
Publication of JP5160717B2 publication Critical patent/JP5160717B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2002508822A 2000-07-06 2001-06-29 対称的な並列導体のコイルアンテナを有するプラズマリアクタ Expired - Lifetime JP5160717B2 (ja)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US09/611,170 2000-07-06
US09/611,345 2000-07-06
US09/610,800 US6409933B1 (en) 2000-07-06 2000-07-06 Plasma reactor having a symmetric parallel conductor coil antenna
US09/611,168 US6414648B1 (en) 2000-07-06 2000-07-06 Plasma reactor having a symmetric parallel conductor coil antenna
US09/611,169 2000-07-06
US09/611,170 US6694915B1 (en) 2000-07-06 2000-07-06 Plasma reactor having a symmetrical parallel conductor coil antenna
US09/610,800 2000-07-06
US09/611,168 2000-07-06
US09/611,345 US6462481B1 (en) 2000-07-06 2000-07-06 Plasma reactor having a symmetric parallel conductor coil antenna
US09/611,169 US6685798B1 (en) 2000-07-06 2000-07-06 Plasma reactor having a symmetrical parallel conductor coil antenna
PCT/US2001/020717 WO2002005308A2 (en) 2000-07-06 2001-06-29 A plasma reactor having a symmetric parallel conductor coil antenna

Publications (3)

Publication Number Publication Date
JP2004509429A JP2004509429A (ja) 2004-03-25
JP2004509429A5 true JP2004509429A5 (es) 2008-08-14
JP5160717B2 JP5160717B2 (ja) 2013-03-13

Family

ID=27541986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002508822A Expired - Lifetime JP5160717B2 (ja) 2000-07-06 2001-06-29 対称的な並列導体のコイルアンテナを有するプラズマリアクタ

Country Status (3)

Country Link
EP (1) EP1301938A2 (es)
JP (1) JP5160717B2 (es)
WO (1) WO2002005308A2 (es)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3820188B2 (ja) 2002-06-19 2006-09-13 三菱重工業株式会社 プラズマ処理装置及びプラズマ処理方法
AU2002313941A1 (en) * 2002-07-26 2004-02-16 Plasmart Co. Ltd. Inductively coupled plasma generator having lower aspect ratio
US6852639B2 (en) 2002-07-31 2005-02-08 Infineon Technologies Ag Etching processing method for a material layer
KR100486724B1 (ko) 2002-10-15 2005-05-03 삼성전자주식회사 사행 코일 안테나를 구비한 유도결합 플라즈마 발생장치
JP2006216903A (ja) * 2005-02-07 2006-08-17 Hitachi High-Technologies Corp プラズマ処理装置
CN101136279B (zh) 2006-08-28 2010-05-12 北京北方微电子基地设备工艺研究中心有限责任公司 电感耦合线圈及电感耦合等离子体装置
JP5277473B2 (ja) 2006-11-28 2013-08-28 サムコ株式会社 プラズマ処理装置
US8956500B2 (en) 2007-04-24 2015-02-17 Applied Materials, Inc. Methods to eliminate “M-shape” etch rate profile in inductively coupled plasma reactor
JP5229995B2 (ja) * 2008-04-07 2013-07-03 株式会社アルバック アンテナ、交流回路、及びプラズマ処理装置
JP5551343B2 (ja) * 2008-05-14 2014-07-16 東京エレクトロン株式会社 誘導結合プラズマ処理装置
JP5231308B2 (ja) * 2009-03-31 2013-07-10 東京エレクトロン株式会社 プラズマ処理装置
US20110094994A1 (en) * 2009-10-26 2011-04-28 Applied Materials, Inc. Inductively coupled plasma apparatus
US20110094683A1 (en) * 2009-10-26 2011-04-28 Applied Materials, Inc. Rf feed structure for plasma processing
JP5851682B2 (ja) 2010-09-28 2016-02-03 東京エレクトロン株式会社 プラズマ処理装置
KR101202957B1 (ko) * 2010-10-19 2012-11-20 주성엔지니어링(주) 플라즈마 발생용 안테나 및 이를 포함하는 기판처리장치
CN105408984B (zh) 2014-02-06 2019-12-10 应用材料公司 用于启用轴对称以用于改进的流动传导性和均匀性的在线去耦合等离子体源腔室硬件设计
KR101712263B1 (ko) * 2014-04-22 2017-03-03 김일욱 헬리컬공명플라즈마 안테나 및 이를 구비하는 플라즈마 발생 장치
JP2015159118A (ja) * 2015-03-26 2015-09-03 東京エレクトロン株式会社 プラズマ処理装置
JP6668384B2 (ja) * 2015-06-15 2020-03-18 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ コイルアセンブリ、コイルアセンブリを用いてトレンチを形成する方法及びエッチングリアクタ
KR101932117B1 (ko) * 2017-08-11 2018-12-24 피에스케이 주식회사 기판 처리 장치, 기판 처리 방법 및 플라즈마 발생 유닛
US11521828B2 (en) * 2017-10-09 2022-12-06 Applied Materials, Inc. Inductively coupled plasma source
KR101972783B1 (ko) * 2017-10-13 2019-08-16 주식회사 유진테크 Icp 안테나 및 이를 포함하는 플라즈마 처리 장치
KR20220094272A (ko) * 2020-12-28 2022-07-06 세메스 주식회사 기판 처리 장치

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
JPS577100A (en) * 1980-06-16 1982-01-14 Nippon Electron Optics Lab Plasma generator
EP0468742B1 (en) * 1990-07-24 1996-03-27 Varian Australia Pty. Ltd. Inductively coupled plasma spectroscopy
US6074512A (en) * 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US5231334A (en) * 1992-04-15 1993-07-27 Texas Instruments Incorporated Plasma source and method of manufacturing
JP3105403B2 (ja) * 1994-09-14 2000-10-30 松下電器産業株式会社 プラズマ処理装置
US5753044A (en) * 1995-02-15 1998-05-19 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
ATE181637T1 (de) * 1994-10-31 1999-07-15 Applied Materials Inc Plasmareaktoren zur halbleiterscheibenbehandlung
US5919382A (en) * 1994-10-31 1999-07-06 Applied Materials, Inc. Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor
US5688357A (en) * 1995-02-15 1997-11-18 Applied Materials, Inc. Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor
US6252354B1 (en) * 1996-11-04 2001-06-26 Applied Materials, Inc. RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control
US6028395A (en) * 1997-09-16 2000-02-22 Lam Research Corporation Vacuum plasma processor having coil with added conducting segments to its peripheral part
US6028285A (en) * 1997-11-19 2000-02-22 Board Of Regents, The University Of Texas System High density plasma source for semiconductor processing

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