JP2004333074A

JP2004333074A - Base plate heat-treatment apparatus

Info

Publication number: JP2004333074A
Application number: JP2003132555A
Authority: JP
Inventors: Shiko Matsuda; 至康松田; Takashi Nakabayashi; 貴中林; Shigeki Iijima; 重樹飯島
Original assignee: IHI Corp
Current assignee: IHI Corp
Priority date: 2003-05-12
Filing date: 2003-05-12
Publication date: 2004-11-25
Anticipated expiration: 2023-05-12
Also published as: JP4396135B2

Abstract

<P>PROBLEM TO BE SOLVED: To provide a base plate heat treatment apparatus, having a small total length, high accuracy of heat treatment for a base plate, high productivity and little fear of contaminating the base plate. <P>SOLUTION: Instead of the conventional base plate heat treatment apparatus for heat treating a base plate, this base plate heat treatment apparatus includes: a base plate transport rack for vertically supporting a base plate; a heat treatment furnace provided with a heat treatment chamber having a storing space for arranging a plurality of base plate transport stands in the longitudinal direction and storing the same and a plurality of heating sources disposed in the direction intersecting perpendicularly to the longitudinal direction; and a base plate transport feed mechanism for feeding the base plate transport stand with the surface of the base plate parallel to the longitudinal direction in the longitudinal direction of the storing space. When the base plate transport stand feed mechanism feeds the base plate transport stand in the longitudinal direction of the storing space, the base plate supported by the base plate transport stand passes a gap between the two or more heating sources. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明は、ガラス基板等の基板を熱処理する基板熱処理装置に係る。特に、基板の支持構造と基板を加熱するための構造に特徴のある基板熱処理装置に関する。
【０００２】
【従来の技術】
ガラス基板等の基板を熱処理する従来の基板熱処理装置は、炉と搬送装置とで構成される。
搬送装置は、ローラーにガラス基板を水平に乗せ、ローラーを回転して１枚づつガラス基板を炉内で搬送する。
炉は、ガラス基板の送り方向に長い空間をもっており、炉内温度が長手方向に所定の分布をもっている。ガラス基板が、炉内を搬送されると、所望の温度履歴を受ける。ガラス基板は、炉内を搬送される際に、加熱され、所定時間だけ所定温度に維持され、冷却されて、炉から取りだされる。一般に、炉長の中央部の温度が最高になる。
【０００３】
一般に、搬送装置のガラス基板を送るための送り速度は、炉の長手方向について、一定である。従って、高温の熱処理をするには炉の長さを長くする必要が生じる。
また、炉内には長手方向に温度勾配が生ずるので、炉内を搬送されるガラス基板の先端部と後端部とでは常に温度が異なっている。この温度差を小さくするには、炉の単位長さ当たりの温度勾配を小さく必要が有るので、炉の長さを長くする必要が生ずる。
また、ガラス基板を搬送用ローラーに平置して搬送するので、ガラス基板の表面に不純物が付着するおそれがあった。
また、ローラーハウスからは粉塵が発生するので、その粉塵が不純物となってガラス基板に付着しない様に注意が必要であった。
【０００４】
【特許文献１】
特開平１１−３７６６０号公報
【特許文献２】
特開平１１−２５８５４号広報
【０００５】
【発明が解決しようとする課題】
本発明は以上に述べた問題点に鑑み案出されたもので、全長が短く、基板の熱処理の精度が高く、生産性が高く、また基板の汚染の恐れの少ない基板熱処理装置を提供しようとする。
【０００６】
【課題を解決するための手段】
上記目的を達成するため、本発明に係る基板を熱処理する基板熱処理装置を、基板を縦置きに支持可能な基板搬送架台と、複数の前記基板搬送架台を長手方向に並べて収納可能な収納空間を持った熱処理室と前記熱処理室内に前記長手方向に交差する方向に配置された複数の加熱源とを有する熱処理炉と、基板の表面を前記長手方向に平行にして前記基板搬送架台を前記収納空間の前記長手方向に送り可能な基板搬送架台送り機構と、を備え、前記基板搬送架台送り機構が前記基板搬送架台を前記収納空間の前記長手方向に送る際に、前記基板搬送架台が支持する基板が前記複数の加熱源の互いの隙間を通過する、ものとした。
【０００７】
上記本発明の構成により、基板搬送架台が基板を縦置きに支持可能であり、熱処理炉の熱処理室が複数の前記基板搬送架台を長手方向に並べて収納可能な収納空間を持ち、熱処理炉の複数の加熱源が前記熱処理室内に前記長手方向に交差する方向に配置され、基板搬送架台送り機構が基板の表面を前記長手方向に平行にして前記基板搬送架台を前記収納空間の前記長手方向に送り可能であり、前記基板搬送架台送り機構が前記基板搬送架台を前記収納空間の前記長手方向に送る際に、前記基板搬送架台が支持する基板が前記複数の加熱源の互いの隙間を通過するので、基板搬送架台送り機構が収納空間に収納された基板搬送架台を前記熱処理炉の長手方向へ送ると、複数の加熱源が互いの隙間を通過する基板を加熱し、基板が熱処理される。
【０００８】
さらに、本発明に係る基板熱処理装置は、前記熱処理炉が前記収納空間を長手方向に複数の区画に間仕切る様に閉止し開放することの可能な間仕切り壁を有し、前記基板搬送架台が前記区画に収納可能になっているのが好ましい。
上記本発明の構成により、前記熱処理炉の間仕切り壁が前記熱処理室の前記収納空間を長手方向に複数の区画に間仕切る様に閉止し開放することができ、前記基板搬送架台が前記区画に収納可能であるので、前記収納空間を間仕切られてできた複数の区画で、互いに異なる熱処理の条件を設定することが容易になる。
【０００９】
さらに、本発明に係る基板熱処理装置は、前記複数の加熱源が前記区画毎に制御可能になっている、のが好ましい。
上記本発明の構成により、前記複数の加熱源が前記区画毎に制御可能になっているので、基板搬送架台に支持された基板を、区画ごとに互いに異なる条件で熱処理することが容易になる。
【００１０】
さらに、本発明に係る基板熱処理装置は、基板搬送架台送り機構が基板搬送架台を長手方向に並んだ前記区画に順次移動させ、前記複数の加熱源が前記区画毎に個別の温度制御をされ、基板搬送架台に支持された基板が所望の温度履歴を与えられる、のが好ましい。
上記本発明の構成により、基板搬送架台が長手方向に並んだ区画に順次移動し、基板搬送架台に支持された基板が区画毎に個別の温度制御で加熱され、所望の温度履歴をうけるので、間仕切り壁がない場合に比べ収納空間の長さを短くすることができる。
【００１１】
さらに、本発明に係る基板熱処理装置は、前記加熱源が前記熱処理室の上方からつり下げられている、が好ましい、
上記本発明の構成により、前記加熱源が前記熱処理室の上方からつり下げられているので、前記基板搬送架台が基板を下方から支持することで、前記加熱源と基板との機械的接触を防ぐことができる。
【００１２】
さらに、本発明に係る基板熱処理装置は、前記基板搬送架台が表面を平行に揃えて並んだ複数の基板を縦置きに支持可能である、のが好ましい。
上記本発明の構成により、前記基板搬送架台が表面を平行に揃えて並んだ複数の基板を縦置きに支持可能であるので、基板の単位当たりの熱処理のスループットを上げることができる。
【００１３】
さらに、本発明に係る基板熱処理装置は、前記基板搬送架台が、基板の縁を支持する支持部材と基板の表面に側面を向き合わせて前記複数の基板の群を挟む一対の壁構造とを有する、のが好ましい。
上記本発明の構成により、前記基板搬送架台の支持部材が基板の縁を支持し、前記基板搬送架台の一対の壁構造が、前記複数の基板の群を挟み、前記基板の熱処理する面に側面を向き合わせるので、加熱源により基板を加熱する際に、複数の基板の群の中での基板の熱処理する面の温度のばらつきを抑制できる。
【００１４】
さらに、本発明に係る基板熱処理装置は、前記壁部材が断熱材製の断熱部材と該断熱部材を隙間なく覆う金属板でできた被覆部材とを持つ、のが好ましい。
上記本発明の構成により、前記壁構造の断熱部材が断熱材製であり、前記壁構造の被覆部材が該断熱部材を隙間なく覆う金属板であるので、断熱部材が基板からの熱の放散を抑制し、被覆部材が断熱部材による基板の汚染を防止できる。
【００１５】
さらに、本発明に係る基板熱処理装置は、前記支持部材が基板の上の辺に係合する上桟と基板の下の辺に係合する下桟とを持つ、のが好ましい。
上記本発明の構成により、前記支持部材の上桟と下桟とが基板の上の辺と下の辺とに係合するので、基板を水平移動して桟へ係合でき、基板の基板搬送架台への搭載が容易にできる。
【００１６】
さらに、本発明に係る基板熱処理装置は、前記収納空間の上下方向に気体を通気可能な気体配管系を、備えるのが好ましい。
上記本発明の構成により、気体配管系が前記収納空間の上下方向に気体を通気可能であるので、基板を、表面を通過する様に、収納空間に流すことができる。
【００１７】
【発明の実施の形態】
以下、本発明の好ましい実施形態に係る基板熱処理装置を、図面を参照して説明する。なお、各図において、共通する部分には同一の符号を付し、重複した説明を省略する。
【００１８】
図１は、実施形態に係る基板熱処理装置の鳥瞰図である。図２は、実施形態に係る基板熱処理装置の部分鳥瞰図である。図３は、実施形態にかかる基板熱処理装置の側面断面図である。図４は、実施形態にかかる基板熱処理装置のＡ−Ａ断面図である。
基板熱処理装置１は、基板２を熱処理する装置であって、基板搬送架台１０と熱処理炉２０とロードロック装置６０とアンロードロック装置７０と基板搬送架台送り装置８０と気体配管系（図示せず）とで構成される。
【００１９】
基板搬送架台１０は、基板を縦置きに支持可能なものであって、台車１１と複数の支持部材１２と一対の壁構造１３とで構成される。
基板搬送架台１０は、表面を平行に揃えて並んだ複数の基板を縦置きに支持可能であるのが好ましい。
台車１１は、基板搬送架台の下部構造であって、所定の厚みの四辺形の台であり、両方の側面に車輪を設けられ、下面にラックが設けられている。ここで、説明の便宜の為に、車輪の転動方向を搬送方向と呼ぶ。搬送方向が、後述する長手方向に一致する。
例えば、台車１１は、断熱材製の断熱部材と該断熱部材を隙間なく覆う金属板でできた被覆部材とで構成される。
【００２０】
支持部材１２は、基板２の縁を支持する部材である。支持部材１２は、基板の上の辺に係合する上桟と下の辺に係合する下桟とを持つのが好ましい。
例えば、基板搬送架台１０は、複数の支持部材１２を搬送方向に直交する向きに並べて設けられる。一個の支持部材は、矩形に曲ったパイプとそのパイプの上部に設けられた上桟と下部に設けられた下桟とを持ち、矩形で形作る面が搬送方向に平行になるように、台車の上面に固定される。上桟は、下向きの溝をもち、下桟は、上向きの溝をもつ。上桟は、縦になった基板２の上辺に係合する。下桟は、縦になった基板２の下辺に係合する。
【００２１】
壁構造１３は、基板２の表面に側面を向かい合わせて複数の基板２の群を挟む壁である。壁構造１３は、断熱材製の断熱部材と該断熱部材を隙間なく覆う金属板でできた被覆部材とで構成されるのが好ましい。
例えば、壁構造は、基板２の面よりも広い側面をもった６面体であり、６面を覆う薄い金属板と６面体の内部に充満したアルミナブランケットで構成される。壁構造１３は、側面を搬送方向に平行にして、複数の支持部材の群を挟んで、搬送方向に向かった台車１１の左右の上部に固定される。
【００２２】
熱処理炉２０は、基板を加熱または冷却する炉であり、熱処理室３０と加熱源４０と間仕切り壁５０とで構成される。
熱処理室３０は、複数の基板搬送架台１０を長手方向に並べて収納可能な収納空間を持った部屋である。
熱処理室３０は、収納空間を長手方向に向かって上下左右を覆う壁構造を持つ。壁構造は、左右一対の側壁と天井壁と床壁とで構成される。その壁構造は、断熱材製の断熱部材と該断熱部材を隙間なく覆う金属板でできた被覆部材とで構成されるのが好ましい。
【００２３】
加熱源４０は、熱処理室３０の収納空間に長手方向に交差して水平方向に配置されたヒーターであり、後述する基板搬送架台送り機構８０が基板搬送架台１０を収納空間の長手方向に送る際に、基板搬送架台１０が支持する基板２が複数の加熱源４０の互いの隙間を通過する様になっている。
加熱源４０が熱処理室３０の上方からつり下げられているのが好ましい。
例えば、加熱源４０は、ニクロム線等の電気を通電して発熱する電気ヒータである。
図１乃至図４は、基板搬送架台１０が搬送方向に搬送された際に、一つの支持部材が熱処理室３０の上方からつり下げられた加熱源４０の隙間に位置している、のを示している。
図４が、電気ヒーターの両端の端子が熱処理炉の天井部に固定され、電気ヒーターの本体部が熱処理炉の上部空間と下部空間とを縫うように配置される、のを示している。
【００２４】
間仕切り壁５０が熱処理室３０の収納空間を長手方向に複数の区画に間仕切る様に閉止しさらに開放することをできるのが好ましい。
基板搬送架台１０が区画に収納可能になっている。
図３は、４つの間仕切り壁５０が熱処理室３０を５つの区画に間仕切っており、それぞれの区画に基板搬送架台１０が収納されている、のを示している。熱処理室３０の夫々の区画を、第一昇温室３０ａ、第一保持室３０ｂ、第二昇温室３０ｃ、第三昇温室３０ｄ、第二保持室３０ｅと呼称する。
間仕切り壁５０は、電気駆動により、隣合った区画を閉止または開放できるゲート弁である。
【００２５】
複数の加熱源４０が区画毎に温度制御可能になっているのが好ましい。
図３は、加熱源４０が後述する間仕切り壁５０に間仕切られた区画ごとに独立している、のを示している。
図２は、区画に区切られた加熱源４０に相当する電気ヒータが、長手方向に３個、長手方向に直交する方向に７個に分割された、のを示している。従って、区画に収納された基板搬送架台に支持される複数の基板を熱処理する際に、総計２１個の電気ヒータを個別に温度制御して、基板毎の熱処理のむらと基板の表面の場所毎の熱処理のむらを抑制することが可能になる。
【００２６】
ロードロック装置６０は、熱処理炉２０の収納空間に周囲雰囲気が混入するのを防止しつつ品物を熱処理炉２０を入れる入口であり、ロードロック室６１と一対のロードロックゲート６２，６３で構成される。
ロードロック室６１は、基板搬送架台１０が収納可能な空間を持った部屋であり、前方に前部開口、後方に後部開口をもつ。ロードロックゲート６２，６３が、前部開口と後部開口に設けられる。ロードロックゲート６２、６３は、前部開口または後部開口を気密に閉止することができる。
一対のロードロックゲート６２、６３を交互に開閉して、基板搬送架台１０を熱処理炉２０の収納空間にロードできる。
【００２７】
アンロードドック装置７０は、熱処理炉２０の収納空間に周囲雰囲気が混入するのを防止しつつ品物を熱処理炉２０から出す出口であり、アンロードロック室７１と一対のアンロードロックゲート７２，７３で構成される。
アンロードロック室７１は、基板搬送架台１０が収納可能な空間を持った部屋であり、前方に前部開口、後方に後部開口をもつ。アンロードロックゲート７２，７３が、前部開口と後部開口に設けられる。アンロードロックゲート７２、７３は、前部開口または後部開口を気密に閉止することができる。
一対のアンロードロックゲート７２、７３を交互に開閉して、基板搬送架台１０を熱処理炉２０の収納空間からアンロードできる。
【００２８】
基板搬送架台送り装置８０は、基板２の表面を長手方向に平行にして基板搬送架台１０を収納空間の長手方向に送る装置であり、レール８１とラック８２とピニオン８３と駆動機構（図示せず）とで構成される。
レール８１は、基板搬送架台１０の車輪が転動するものであり、熱処理炉の下面に長手方向に伸びて設けられる。
ラック８２は、ラック歯の切られた長手部材であり、ラック歯を下に向けて基板搬送架台１０の下面に設けられる。
ピニオン８３は、ラックのラック歯に噛みあって、ラックを送る機械要素であり、回転送り方向を長手方向に一致させて、熱処理炉３０の収納空間の下部に回転軸を回転自在に固定される。
駆動機構（図示せず）は、ピニオンを回転させる機構である。
駆動機構がピニオン８３を回転させると、ラック８２を長手方向（搬送方向に一致する）に送り、基板搬送架台１０が、車輪をレール８１の上を転がせて、長手方向へ送られる。
【００２９】
気体配管系（図示せず）は、収納空間の上下方向に気体を通気可能な配管系である。例えば、気体配管系は、所定の流量の清浄空気を熱処理室３０の上部から収納空間へ入れ、熱処理室３０の下部から引く。
清浄空気が、基板搬送架台１０の支持する複数の基板の隙間を上方から下方へ流れる。
清浄空気が、基板から熱を奪っているので、加熱源が基板への入熱を減らすと、基板の温度が低下する。
【００３０】
次に、実施形態に係る基板熱処理装置１の作用を説明する。
図５は、実施形態に係る基板熱処理装置の温度履歴図の一例である。図６は、実施形態に係る基板熱処理装置のサイクルタイム図である。
【００３１】
最初に温度履歴を説明する。
第一昇温処理：基板を加熱し所定時間で室温からＴ１度までに昇温する。
第一保持処理：基板を所定時間Ｔ１度に維持する。
第二昇温処理：基板を加熱し所定時間でＴ１度からＴ２度に昇温する。
第三昇温処理：基板を加熱し所定時間でＴ２度からＴ３度に昇温する。
第二保持処理：基板を所定時間Ｔ３度に維持する。
冷却処理：基板を所定時間でＴ３度からＴ１度にする。
【００３２】
一つの基板搬送架台１０に支持された基板２に着目して、基板熱処理装置の作用を説明する。
基板搬送架台１０が、ロードロック室６１へ入る。基板の温度は、周囲環境の温度（室温）である。
基板搬送架台送り装置８０が、基板搬送架台１０を第一昇温室３０ａへ入れ、ロードロックゲート６３と間仕切り壁５０で、第一昇温室３０ａの前後の開口を閉止する。
加熱源４０が、熱処理室温度センサ４５の出力を基に温度制御をして、基板の温度を所定時間で室温からＴ１度までに昇温させる。温度制御パターンは、予めシミュレーションまたは試験により定められている。
以下、順次、基板搬送架台１０を第一昇温室３０ａ、第一保持室３０ｂ、第二昇温室３０ｃ、第三昇温室３０ｄ、第二保持室３０ｅ、アンロードロック室７１へと送り、所定の温度制御をおこなう。
アンロードロック室７１からアンロードされた基板搬送架台１０に支持された基板は所望の温度履歴をうけており、基板の熱処理が完了する。
【００３３】
上述の実施形態の基板熱処理装置１を用いれば、複数の基板２を基板搬送架台１０に縦置きに並べて、基板２の面が熱処理炉２０の長手方向に平行して、基板搬送架台１０を長手方向におくり、基板２が長手方向に直交して並んだ加熱源４０の隙間を通過する様にしたので、基板搬送架台１０が熱処理炉２０の収納空間に搬送されるにつれ、基板２は熱処理される。
また、間仕切り壁５０で収納空間を複数の区間に間仕切り、基板搬送架台１０がその区画に収納可能な様にしたので、区画毎に異なる熱処理をすることができる。
また、加熱源４０である電気ヒータを区画ごとに制御できる様にしたので、区画毎に異なる熱処理条件を設定することが容易になる。
また、基板２を乗せた基板搬送架台１０を順次区画に送るようにしたので、基板２が区画ごとに所定の熱処理をうけることができ、間仕切り壁５０がない従来熱処理炉に比べて、長手方向の熱処理炉２０の長さを短く出来る。
また、基板搬送架台１０に複数の基板２を乗せる様にしたので、複数の基板２を同時に熱処理でき、熱処理のスループットが向上する。
また、基板２を縦置きにしたので、基板２の表面の汚れをさけるのが容易になる。
また、加熱源４０を熱処理炉２０の上方から吊るしたので、加熱源４０の構造が簡単になる。
また、加熱源４０と基板搬送架台１０に積まれた複数の基板２との機械的干渉を防止するのが容易になる。
また、基板２を上下に配置した上桟と下桟に係合する様にしたので、基板の基板搬送架台への搭載が容易になり、自動化に適した構造となる。
また、気体配管系により、気体を収納空間の上下方向に通気する様にしたので、気体が並んだ複数の基板の隙間に流すのが容易であり、基板の気体を使用した処理が容易になる。
【００３４】
本発明は以上に述べた実施形態に限られるものではなく、発明の要旨を逸脱しない範囲で各種の変更が可能である。
図では、２台の基板搬送架台が並んで、一つの区画に入る例を示したがこれに限定されず、１台の基板搬送架台が一つの区画に入ってもよいし、３台以上の基板搬送架台が一つの区画に入ってもよい。
また、基板搬送架台が間を明けることなく順次後ろの区画に搬送される例で説明したが、これに限定されず、熱処理の要請によっては、基板搬送架台の搬送される速度が異なっていてもよい。
基板搬送架台送り装置をラック・ピニオン式で説明したがこれに限定されず、その他の搬送機構でもよい。
【００３５】
【発明の効果】
以上説明したように本発明の基板を熱処理する基板熱処理装置は、その構成により、以下の効果を有する。
複数の基板搬送架台を長手方向に並べて収納可能な収納空間を持った熱処理炉を用意し、基板を基板搬送架台に縦置きにし、その基板の表面を熱処理炉の長手方向に平行にして、基板搬送架台を長手方向に送り、基板を長手方向に直交して配置した加熱源の隙間に通すので、基板搬送架台送り機構が収納空間に収納された基板搬送架台を前記熱処理炉の長手方向へ送ると、複数の加熱源が互いの隙間を通過する基板を加熱し、基板が熱処理される。
また、間仕切り壁で収納空間を複数の区画に間仕切り、基板搬送架台がその区画に収納可能なので、前記収納空間を間仕切られてできた複数の区画で、互いに異なる熱処理の条件を設定することが容易になる。
また、加熱源を区画毎に制御可能にするので、基板搬送架台に支持された基板を、区画ごとに互いに異なる条件で熱処理することが容易になる。
また、基板搬送架台が長手方向に並んだ区画に順次移動し、基板搬送架台に支持された基板が区画毎に個別の温度制御で加熱され、所望の温度履歴をうけるので、間仕切り壁がない場合に比べ収納空間の長さを短くすることができる。
また、加熱源が熱処理室の上方からつり下げられているので、基板搬送架台が基板を下方から支持することで、前記加熱源と基板との機械的接触を防ぐことができる。
また、基板搬送架台が表面を平行に揃えて並んだ複数の基板を縦置きに支持するので、基板の単位枚数あたりの熱処理のスループットを上げることができる。
また、壁構造が前記複数の基板の群を挟み基板の熱処理する面に側面を向かい合わせるので、加熱源により基板を加熱する際に、複数の基板の群の中での基板の熱処理する面の温度のばらつきを抑制できる。
また、壁構造の被覆部材が該断熱部材を隙間なく覆う金属板であるので、断熱部材が基板からの熱の放散を抑制し、被覆部材が断熱部材による基板の汚染を防止できる。
また、桟が基板の上下の辺に係合するので、基板を水平移動して桟へ係合でき、基板の基板搬送架台への搭載が容易にできる。
また、前記収納空間の上下方向に気体を通気可能であるので、気体を、基板の表面を通過する様に、収納空間に流すことができる。
従って、全長が短く、基板の熱処理の精度が高く、生産性が高く、また基板の汚染の恐れの少ない基板熱処理装置を提供できる。
【００３６】
【図面の簡単な説明】
【図１】実施形態にかかる基板熱処理装置の鳥瞰図である。
【図２】実施形態にかかる基板熱処理装置の部分鳥瞰図である。
【図３】実施形態にかかる基板熱処理装置の側面断面図である。
【図４】実施形態にかかる基板熱処理装置のＡ−Ａ断面図である。
【図５】実施形態にかかる基板熱処理装置の温度履歴の一例図である。
【図６】実施形態にかかる基板熱処理装置のサイクルタイム図である。
【符号の説明】
１基板熱処理装置
２基板（ガラス基板）
１０基板搬送架台
２０熱処理炉
３０熱処理室
３０ａ第一昇温室
３０ｂ第一保持室
３０ｃ第二昇温室
３０ｄ第三昇温室
３０ｅ第二保持室
４０加熱源
４５熱処理室温度センサ
５０間仕切り壁
６０ロードロック装置
６１ロードロック室
６２ロードロックゲート
６３ロードロックゲート
７０アンロードロック装置
７１アンロードロック室
７２アンロードロックゲート
７３アンロードロックゲート
８０基板搬送架台送り装置
８１レール
８２ラック
８３ピニオン[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a substrate heat treatment apparatus for heat treating a substrate such as a glass substrate. In particular, the present invention relates to a substrate heat treatment apparatus characterized by a substrate support structure and a structure for heating the substrate.
[0002]
[Prior art]
A conventional substrate heat treatment apparatus for heat-treating a substrate such as a glass substrate includes a furnace and a transfer device.
The transfer device places a glass substrate horizontally on a roller, rotates the roller, and transfers the glass substrates one by one in a furnace.
The furnace has a long space in the feeding direction of the glass substrate, and the temperature in the furnace has a predetermined distribution in the longitudinal direction. As the glass substrate is transported in the furnace, it receives a desired temperature history. The glass substrate is heated when transported in the furnace, is maintained at a predetermined temperature for a predetermined time, is cooled, and is taken out of the furnace. Generally, the temperature at the center of the furnace length is highest.
[0003]
Generally, the feeding speed for feeding the glass substrate of the transfer device is constant in the longitudinal direction of the furnace. Accordingly, it is necessary to increase the length of the furnace in order to perform high-temperature heat treatment.
Further, since a temperature gradient occurs in the furnace in the longitudinal direction, the temperature of the front end portion and the rear end portion of the glass substrate conveyed in the furnace are always different. In order to reduce this temperature difference, it is necessary to reduce the temperature gradient per unit length of the furnace, so that it is necessary to lengthen the furnace.
Further, since the glass substrate is transported by being placed flat on the transport roller, there is a possibility that impurities may adhere to the surface of the glass substrate.
Further, since dust is generated from the roller house, care must be taken so that the dust does not become an impurity and adhere to the glass substrate.
[0004]
[Patent Document 1]
JP-A-11-37660 [Patent Document 2]
Japanese Patent Application Laid-Open No. 11-25854
[Problems to be solved by the invention]
The present invention has been devised in view of the problems described above, and aims to provide a substrate heat treatment apparatus having a short overall length, high precision in heat treatment of a substrate, high productivity, and a low risk of contamination of the substrate. I do.
[0006]
[Means for Solving the Problems]
In order to achieve the above object, a substrate heat treatment apparatus for heat-treating a substrate according to the present invention is provided with a substrate transfer gantry capable of vertically supporting a substrate and a storage space capable of storing a plurality of the substrate transfer gantry in a longitudinal direction. A heat treatment furnace having a heat treatment chamber having therein and a plurality of heating sources disposed in the heat treatment chamber in a direction intersecting the longitudinal direction, and the substrate transfer gantry having a substrate surface parallel to the longitudinal direction and the storage space. A substrate transport gantry feed mechanism capable of feeding the substrate transport gantry in the longitudinal direction, wherein when the substrate transport gantry feed mechanism sends the substrate transport gantry in the longitudinal direction of the storage space, a substrate supported by the substrate transport gantry Pass through the gap between the plurality of heating sources.
[0007]
According to the configuration of the present invention, the substrate transfer gantry can support the substrate in a vertical position, the heat treatment chamber of the heat treatment furnace has a storage space capable of storing a plurality of the substrate transfer pedestals arranged in the longitudinal direction, and a plurality of heat treatment furnaces. A heating source is disposed in the heat treatment chamber in a direction intersecting the longitudinal direction, and a substrate transport gantry feed mechanism feeds the substrate transport gantry in the longitudinal direction of the storage space with the surface of the substrate parallel to the longitudinal direction. It is possible, and when the substrate transport gantry feeding mechanism sends the substrate transport gantry in the longitudinal direction of the storage space, the substrate supported by the substrate transport gantry passes through the gap between the plurality of heating sources. When the substrate transfer gantry feed mechanism sends the substrate transfer gantry accommodated in the accommodation space in the longitudinal direction of the heat treatment furnace, a plurality of heating sources heat the substrates passing through the gap between each other, and the substrates are heat-treated.
[0008]
Furthermore, the substrate heat treatment apparatus according to the present invention has a partition wall that can be closed and opened so that the heat treatment furnace partitions the storage space into a plurality of sections in the longitudinal direction, and the substrate transfer gantry is Preferably, it can be stored in a compartment.
According to the configuration of the present invention, the partition wall of the heat treatment furnace can be closed and opened so as to partition the storage space of the heat treatment chamber into a plurality of sections in a longitudinal direction, and the substrate transfer gantry is stored in the section. Since it is possible, it becomes easy to set mutually different heat treatment conditions in a plurality of partitions formed by partitioning the storage space.
[0009]
Further, in the substrate heat treatment apparatus according to the present invention, it is preferable that the plurality of heating sources can be controlled for each of the sections.
According to the configuration of the present invention, since the plurality of heating sources can be controlled for each of the sections, it becomes easy to heat-treat the substrate supported by the substrate transport gantry under different conditions for each section.
[0010]
Furthermore, in the substrate heat treatment apparatus according to the present invention, the substrate transfer gantry feed mechanism sequentially moves the substrate transfer gantry to the sections arranged in the longitudinal direction, and the plurality of heating sources are individually temperature-controlled for each of the sections, It is preferable that the substrate supported by the substrate carrier is provided with a desired temperature history.
According to the configuration of the present invention, the substrate transport gantry sequentially moves to the sections lined up in the longitudinal direction, and the substrate supported by the substrate transport gantry is heated by individual temperature control for each section and receives a desired temperature history, The length of the storage space can be reduced as compared with the case where there is no partition wall.
[0011]
Further, in the substrate heat treatment apparatus according to the present invention, preferably, the heating source is suspended from above the heat treatment chamber,
According to the configuration of the present invention, since the heating source is suspended from above the heat treatment chamber, the substrate transfer gantry supports the substrate from below, thereby preventing mechanical contact between the heating source and the substrate. be able to.
[0012]
Furthermore, in the substrate heat treatment apparatus according to the present invention, it is preferable that the substrate transfer gantry can support a plurality of substrates arranged in parallel with their surfaces parallel to each other in a vertical position.
According to the configuration of the present invention, since the substrate transfer gantry can support a plurality of substrates arranged in parallel with their surfaces arranged in parallel, the throughput of the heat treatment per unit of the substrates can be increased.
[0013]
Furthermore, the substrate heat treatment apparatus according to the present invention, wherein the substrate transfer pedestal has a support member for supporting an edge of the substrate and a pair of wall structures sandwiching the group of the plurality of substrates with the side surfaces facing the surface of the substrate. Is preferred.
According to the configuration of the present invention, the support member of the substrate transfer gantry supports an edge of the substrate, and a pair of wall structures of the substrate transfer gantry sandwich the group of the plurality of substrates and have a side surface on a surface of the substrate to be heat-treated. When the substrate is heated by the heating source, it is possible to suppress variations in the temperature of the surface of the substrate to be subjected to the heat treatment in the group of the plurality of substrates.
[0014]
Further, in the substrate heat treatment apparatus according to the present invention, it is preferable that the wall member has a heat insulating member made of a heat insulating material and a covering member made of a metal plate that covers the heat insulating member without gaps.
According to the configuration of the present invention, since the heat insulating member of the wall structure is made of a heat insulating material, and the covering member of the wall structure is a metal plate that covers the heat insulating member without a gap, the heat insulating member dissipates heat from the substrate. Thus, the covering member can prevent the substrate from being contaminated by the heat insulating member.
[0015]
Further, in the substrate heat treatment apparatus according to the present invention, it is preferable that the support member has an upper crosspiece engaged with an upper side of the substrate and a lower crosspiece engaged with a lower side of the substrate.
According to the configuration of the present invention, since the upper and lower crosspieces of the support member engage with the upper side and the lower side of the substrate, the substrate can be horizontally moved and engaged with the crosspiece, and the substrate can be transferred to the substrate. It can be easily mounted on a gantry.
[0016]
Furthermore, it is preferable that the substrate heat treatment apparatus according to the present invention further includes a gas piping system that allows gas to flow in a vertical direction of the storage space.
According to the configuration of the present invention, since the gas piping system allows gas to flow in the vertical direction of the storage space, the substrate can flow into the storage space so as to pass through the surface.
[0017]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, a substrate heat treatment apparatus according to a preferred embodiment of the present invention will be described with reference to the drawings. In each of the drawings, common portions are denoted by the same reference numerals, and redundant description is omitted.
[0018]
FIG. 1 is a bird's-eye view of the substrate heat treatment apparatus according to the embodiment. FIG. 2 is a partial bird's-eye view of the substrate heat treatment apparatus according to the embodiment. FIG. 3 is a side sectional view of the substrate heat treatment apparatus according to the embodiment. FIG. 4 is an AA cross-sectional view of the substrate heat treatment apparatus according to the embodiment.
The substrate heat treatment apparatus 1 is an apparatus that heat-treats the substrate 2, and includes a substrate transfer gantry 10, a heat treatment furnace 20, a load lock device 60, an unload lock device 70, a substrate transfer gantry feed device 80, and a gas piping system (not shown). ).
[0019]
The substrate transfer gantry 10 is capable of supporting a substrate in a vertical position, and includes a carriage 11, a plurality of support members 12, and a pair of wall structures 13.
The substrate transfer gantry 10 is preferably capable of supporting a plurality of substrates arranged with their surfaces aligned in parallel in a vertical position.
The trolley 11 is a lower structure of the substrate transport gantry, and is a quadrilateral pedestal having a predetermined thickness. Wheels are provided on both side surfaces, and a rack is provided on the lower surface. Here, for convenience of explanation, the rolling direction of the wheels is referred to as a transport direction. The transport direction coincides with a longitudinal direction described later.
For example, the trolley 11 includes a heat insulating member made of a heat insulating material and a covering member made of a metal plate that covers the heat insulating member without any gap.
[0020]
The support member 12 is a member that supports the edge of the substrate 2. The support member 12 preferably has an upper crosspiece that engages the upper side of the substrate and a lower crosspiece that engages the lower side.
For example, the substrate transport gantry 10 is provided with a plurality of support members 12 arranged in a direction orthogonal to the transport direction. One supporting member has a pipe bent in a rectangular shape, an upper crosspiece provided in an upper part of the pipe, and a lower crosspiece provided in a lower part thereof. It is fixed on the upper surface. The upper cross has a downward groove, and the lower cross has an upward groove. The upper rail engages with the upper side of the vertical substrate 2. The lower rail engages with the lower side of the vertical substrate 2.
[0021]
The wall structure 13 is a wall that sandwiches a group of the plurality of substrates 2 with the side surface facing the surface of the substrate 2. The wall structure 13 is preferably composed of a heat insulating member made of a heat insulating material and a covering member made of a metal plate that covers the heat insulating member without any gap.
For example, the wall structure is a hexahedron having a side surface wider than the surface of the substrate 2, and is composed of a thin metal plate covering the six surfaces and an alumina blanket filling the inside of the hexahedron. The wall structure 13 is fixed to the upper left and right sides of the carriage 11 facing the transport direction with the side surfaces parallel to the transport direction and sandwiching a group of a plurality of support members.
[0022]
The heat treatment furnace 20 is a furnace for heating or cooling a substrate, and includes a heat treatment chamber 30, a heating source 40, and a partition wall 50.
The heat treatment room 30 is a room having a storage space in which a plurality of substrate transfer pedestals 10 can be stored in a line in the longitudinal direction.
The heat treatment chamber 30 has a wall structure that covers up, down, left and right in the longitudinal direction of the storage space. The wall structure includes a pair of left and right side walls, a ceiling wall, and a floor wall. The wall structure is preferably constituted by a heat insulating member made of a heat insulating material and a covering member made of a metal plate that covers the heat insulating member without any gap.
[0023]
The heating source 40 is a heater that is disposed horizontally in the storage space of the heat treatment chamber 30 so as to intersect with the longitudinal direction and that the substrate transfer gantry feeding mechanism 80 described later feeds the substrate transfer gantry 10 in the longitudinal direction of the storage space. In addition, the substrate 2 supported by the substrate carrier 10 passes through a gap between the plurality of heating sources 40.
Preferably, the heating source 40 is suspended from above the heat treatment chamber 30.
For example, the heating source 40 is an electric heater that generates heat by passing electricity such as a nichrome wire.
FIGS. 1 to 4 show that one support member is located in the gap of the heating source 40 suspended from above the heat treatment chamber 30 when the substrate transfer gantry 10 is transferred in the transfer direction. ing.
FIG. 4 shows that the terminals at both ends of the electric heater are fixed to the ceiling of the heat treatment furnace, and the main body of the electric heater is arranged so as to sew the upper space and the lower space of the heat treatment furnace.
[0024]
It is preferable that the partition wall 50 can be closed and further opened so as to partition the storage space of the heat treatment chamber 30 into a plurality of sections in the longitudinal direction.
The substrate carrier 10 can be stored in a section.
FIG. 3 shows that four partition walls 50 partition the heat treatment chamber 30 into five sections, and the substrate transfer gantry 10 is stored in each section. Each section of the heat treatment room 30 is called a first heating room 30a, a first holding room 30b, a second heating room 30c, a third heating room 30d, and a second holding room 30e.
The partition wall 50 is a gate valve that can close or open adjacent sections by electric drive.
[0025]
It is preferable that the plurality of heating sources 40 can control the temperature for each section.
FIG. 3 shows that the heating source 40 is independent for each section partitioned by a partition wall 50 described later.
FIG. 2 shows that the electric heater corresponding to the heating source 40 divided into sections is divided into three in the longitudinal direction and seven in the direction orthogonal to the longitudinal direction. Therefore, when heat-treating a plurality of substrates supported by the substrate transfer gantry accommodated in the section, a total of 21 electric heaters are individually temperature-controlled, so that the heat treatment unevenness of each substrate and the location of each surface of the substrate are different. It is possible to suppress unevenness of the heat treatment.
[0026]
The load lock device 60 is an entrance into which articles are placed in the heat treatment furnace 20 while preventing the ambient atmosphere from entering the storage space of the heat treatment furnace 20, and includes a load lock chamber 61 and a pair of load lock gates 62 and 63. You.
The load lock chamber 61 is a room having a space in which the substrate transfer gantry 10 can be stored, and has a front opening in the front and a rear opening in the rear. Load lock gates 62 and 63 are provided at the front opening and the rear opening. The load lock gates 62 and 63 can airtightly close the front opening or the rear opening.
By opening and closing the pair of load lock gates 62 and 63 alternately, the substrate transfer gantry 10 can be loaded into the storage space of the heat treatment furnace 20.
[0027]
The unload dock device 70 is an outlet for taking out articles from the heat treatment furnace 20 while preventing the ambient atmosphere from being mixed into the storage space of the heat treatment furnace 20, and includes an unload lock chamber 71 and a pair of unload lock gates 72, 73. It consists of.
The unload lock chamber 71 is a room having a space in which the substrate transfer gantry 10 can be stored, and has a front opening in the front and a rear opening in the rear. Unload lock gates 72 and 73 are provided at the front opening and the rear opening. The unload lock gates 72, 73 can airtightly close the front opening or the rear opening.
By opening and closing the pair of unload lock gates 72 and 73 alternately, the substrate transfer gantry 10 can be unloaded from the storage space of the heat treatment furnace 20.
[0028]
The substrate transfer gantry feeding device 80 is a device for feeding the substrate transfer gantry 10 in the longitudinal direction of the storage space with the surface of the substrate 2 parallel to the longitudinal direction, and includes a rail 81, a rack 82, a pinion 83, and a drive mechanism (not shown) ).
The rail 81 is a wheel on which the wheels of the substrate carrier 10 roll, and is provided on the lower surface of the heat treatment furnace so as to extend in the longitudinal direction.
The rack 82 is a longitudinal member having rack teeth cut, and is provided on the lower surface of the substrate transfer gantry 10 with the rack teeth facing downward.
The pinion 83 is a mechanical element that meshes with the rack teeth of the rack and feeds the rack. The rotation feed direction coincides with the longitudinal direction, and the rotation shaft is rotatably fixed to the lower part of the storage space of the heat treatment furnace 30. .
The drive mechanism (not shown) is a mechanism for rotating the pinion.
When the drive mechanism rotates the pinion 83, the rack 82 is sent in the longitudinal direction (corresponding to the transfer direction), and the substrate transfer gantry 10 is sent in the longitudinal direction by rolling the wheels on the rail 81.
[0029]
The gas piping system (not shown) is a piping system which can ventilate gas in the up and down direction of the storage space. For example, in the gas piping system, clean air having a predetermined flow rate is introduced into the storage space from the upper part of the heat treatment chamber 30 and pulled from the lower part of the heat treatment chamber 30.
The clean air flows from the upper part to the lower part in the gap between the plurality of substrates supported by the substrate transfer frame 10.
Since the clean air is removing heat from the substrate, the temperature of the substrate decreases as the heating source reduces heat input to the substrate.
[0030]
Next, the operation of the substrate heat treatment apparatus 1 according to the embodiment will be described.
FIG. 5 is an example of a temperature history diagram of the substrate heat treatment apparatus according to the embodiment. FIG. 6 is a cycle time diagram of the substrate heat treatment apparatus according to the embodiment.
[0031]
First, the temperature history will be described.
First temperature raising process: The substrate is heated and the temperature is raised from room temperature to T1 degrees for a predetermined time.
First holding process: The substrate is maintained at a predetermined time T1.
Second temperature raising process: The substrate is heated and the temperature is raised from T1 to T2 in a predetermined time.
Third temperature raising process: The substrate is heated and the temperature is raised from T2 degrees to T3 degrees for a predetermined time.
Second holding process: The substrate is maintained at T3 degrees for a predetermined time.
Cooling process: The substrate is changed from T3 degrees to T1 degrees for a predetermined time.
[0032]
The operation of the substrate heat treatment apparatus will be described, focusing on the substrate 2 supported on one substrate transfer gantry 10.
The substrate transfer gantry 10 enters the load lock chamber 61. The temperature of the substrate is the temperature of the surrounding environment (room temperature).
The substrate transfer gantry feeding device 80 puts the substrate transfer gantry 10 into the first temperature raising chamber 30a, and closes the front and rear openings of the first temperature raising chamber 30a with the load lock gate 63 and the partition wall 50.
The heating source 40 controls the temperature based on the output of the heat treatment chamber temperature sensor 45, and raises the temperature of the substrate from room temperature to T1 in a predetermined time. The temperature control pattern is determined in advance by simulation or test.
Hereinafter, the substrate transfer gantry 10 is sequentially sent to the first heating chamber 30a, the first holding chamber 30b, the second heating chamber 30c, the third heating chamber 30d, the second holding chamber 30e, and the unload lock chamber 71, and Perform temperature control.
The substrate supported by the substrate transfer gantry 10 unloaded from the unload lock chamber 71 has a desired temperature history, and the heat treatment of the substrate is completed.
[0033]
If the substrate heat treatment apparatus 1 of the above-described embodiment is used, the plurality of substrates 2 are vertically arranged on the substrate transfer gantry 10, the surface of the substrate 2 is parallel to the longitudinal direction of the heat treatment furnace 20, and the substrate transfer gantry 10 is The substrate 2 is passed through the gap between the heating sources 40 arranged perpendicular to the longitudinal direction, so that the substrate 2 is subjected to the heat treatment as the substrate transfer pedestal 10 is transferred to the storage space of the heat treatment furnace 20. You.
Further, since the storage space is partitioned into a plurality of sections by the partition walls 50, and the substrate transfer gantry 10 can be stored in the sections, different heat treatments can be performed for each section.
Further, since the electric heater as the heating source 40 can be controlled for each section, it is easy to set different heat treatment conditions for each section.
In addition, since the substrate transfer gantry 10 on which the substrates 2 are placed is sequentially sent to the sections, the substrates 2 can be subjected to a predetermined heat treatment for each section, and the longitudinal direction is smaller than that of the conventional heat treatment furnace having no partition wall 50. The length of the heat treatment furnace 20 can be reduced.
Further, since the plurality of substrates 2 are placed on the substrate transfer gantry 10, the plurality of substrates 2 can be heat-treated at the same time, and the throughput of the heat treatment is improved.
In addition, since the substrate 2 is placed vertically, it is easy to prevent the surface of the substrate 2 from being stained.
Further, since the heating source 40 is suspended from above the heat treatment furnace 20, the structure of the heating source 40 is simplified.
Further, it becomes easy to prevent mechanical interference between the heating source 40 and the plurality of substrates 2 stacked on the substrate transfer gantry 10.
Further, since the substrate 2 is engaged with the upper and lower rails arranged vertically, the mounting of the substrate on the substrate transfer gantry becomes easy, and the structure suitable for automation is obtained.
In addition, since the gas is ventilated in the up and down direction of the storage space by the gas piping system, it is easy to flow the gas through the gap between the plurality of substrates arranged, and the processing using the gas of the substrate becomes easy. .
[0034]
The present invention is not limited to the embodiments described above, and various changes can be made without departing from the gist of the invention.
In the figure, an example is shown in which two substrate transfer frames are arranged side by side and enter one section. However, the present invention is not limited to this, and one substrate transfer table may be included in one section or three or more. The substrate transport gantry may enter one section.
In addition, although the example has been described in which the substrate transport gantry is sequentially transported to the later section without leaving a gap, the present invention is not limited to this. Depending on the request for heat treatment, even if the transport speed of the substrate transport gantry is different. Good.
Although the substrate transfer gantry feed device has been described as a rack and pinion type, the present invention is not limited to this, and other transfer mechanisms may be used.
[0035]
【The invention's effect】
As described above, the substrate heat treatment apparatus for heat treating a substrate of the present invention has the following effects depending on the configuration.
Prepare a heat treatment furnace with a storage space that can store a plurality of substrate transfer gantry in the longitudinal direction, place the substrate vertically on the substrate transfer gantry, make the surface of the substrate parallel to the longitudinal direction of the heat treatment furnace, Since the transport gantry is fed in the longitudinal direction and the substrate is passed through the gap between the heating sources arranged perpendicular to the longitudinal direction, the substrate transport gantry feed mechanism sends the substrate transport gantry stored in the storage space in the longitudinal direction of the heat treatment furnace. Then, the plurality of heating sources heat the substrate passing through the gap between each other, and the substrate is heat-treated.
Further, since the storage space is partitioned into a plurality of partitions by the partition walls, and the substrate transfer gantry can be stored in the partition, it is easy to set different heat treatment conditions in the plurality of partitions formed by partitioning the storage space. become.
In addition, since the heating source can be controlled for each section, it becomes easy to heat-treat the substrate supported by the substrate transport gantry under different conditions for each section.
In addition, the substrate transport gantry moves sequentially to the sections arranged in the longitudinal direction, and the substrate supported by the substrate transport gantry is heated by individual temperature control for each section and receives a desired temperature history, so that there is no partition wall. The length of the storage space can be shortened as compared with the case.
Further, since the heating source is suspended from above the heat treatment chamber, the substrate transfer gantry supports the substrate from below, so that mechanical contact between the heating source and the substrate can be prevented.
In addition, since the substrate transfer gantry supports a plurality of substrates arranged vertically with their surfaces aligned in parallel, the throughput of heat treatment per unit number of substrates can be increased.
Also, since the wall structure faces the heat-treated surface of the substrate with the plurality of substrates interposed therebetween, when the substrate is heated by the heating source, the heat-treated surface of the substrate in the plurality of substrates is heated. Variation in temperature can be suppressed.
In addition, since the covering member having the wall structure is a metal plate that covers the heat insulating member without any gap, the heat insulating member can suppress heat dissipation from the substrate, and the covering member can prevent the heat insulating member from contaminating the substrate.
Further, since the bar is engaged with the upper and lower sides of the substrate, the substrate can be horizontally moved and engaged with the bar, so that the substrate can be easily mounted on the substrate carrier.
Further, since gas can be ventilated in the vertical direction of the storage space, the gas can flow into the storage space so as to pass through the surface of the substrate.
Therefore, it is possible to provide a substrate heat treatment apparatus having a short overall length, high accuracy of heat treatment of the substrate, high productivity, and less risk of contamination of the substrate.
[0036]
[Brief description of the drawings]
FIG. 1 is a bird's-eye view of a substrate heat treatment apparatus according to an embodiment.
FIG. 2 is a partial bird's-eye view of the substrate heat treatment apparatus according to the embodiment.
FIG. 3 is a side sectional view of the substrate heat treatment apparatus according to the embodiment.
FIG. 4 is a cross-sectional view taken along line AA of the substrate heat treatment apparatus according to the embodiment.
FIG. 5 is an example diagram of a temperature history of the substrate heat treatment apparatus according to the embodiment.
FIG. 6 is a cycle time diagram of the substrate heat treatment apparatus according to the embodiment.
[Explanation of symbols]
1 substrate heat treatment apparatus 2 substrate (glass substrate)
DESCRIPTION OF SYMBOLS 10 Substrate transfer stand 20 Heat treatment furnace 30 Heat treatment chamber 30a First heating chamber 30b First holding chamber 30c Second heating chamber 30d Third heating chamber 30e Second holding chamber 40 Heat source 45 Heat treatment chamber temperature sensor 50 Partition wall 60 Load lock device 61 Load lock chamber 62 Load lock gate 63 Load lock gate 70 Unload lock device 71 Unload lock chamber 72 Unload lock gate 73 Unload lock gate 80 Substrate transfer rack feeder 81 Rail 82 Rack 83 Pinion

Claims

A substrate heat treatment apparatus for heat treating a substrate,
A board transfer platform capable of supporting the board vertically,
A heat treatment furnace having a heat treatment chamber having a storage space capable of storing a plurality of the substrate transfer frames arranged in the longitudinal direction and a plurality of heating sources arranged in the heat treatment chamber in a direction intersecting the longitudinal direction,
A substrate transport gantry feed mechanism capable of feeding the substrate transport gantry in the longitudinal direction of the storage space with the surface of the substrate parallel to the longitudinal direction,
With
When the substrate transfer gantry feed mechanism sends the substrate transfer gantry in the longitudinal direction of the storage space, the substrate supported by the substrate transfer gantry passes through the gap between the plurality of heating sources,
A substrate heat treatment apparatus, comprising:

The heat treatment furnace has a partition wall that can be closed and opened so as to partition the storage space into a plurality of sections in the longitudinal direction,
The substrate transfer gantry can be stored in the section,
The substrate heat treatment apparatus according to claim 1, wherein:

The plurality of heating sources are controllable for each section,
The substrate heat treatment apparatus according to claim 2, wherein:

The substrate transport gantry feed mechanism sequentially moves the substrate transport gantry to the sections arranged in the longitudinal direction, the plurality of heating sources are individually temperature-controlled for each of the sections, and a substrate supported by the substrate transport gantry is a desired one. Given temperature history,
The substrate heat treatment apparatus according to claim 2, wherein:

The heating source is suspended from above the heat treatment chamber,
The substrate heat treatment apparatus according to claim 1, wherein:

The substrate transfer platform can support a plurality of substrates arranged in parallel with their surfaces aligned in parallel,
The substrate heat treatment apparatus according to claim 1, wherein:

The substrate transport gantry has a pair of wall structures sandwiching the group of the plurality of substrates with side surfaces facing the surface of the substrate and a supporting member that supports an edge of the substrate,
The substrate heat treatment apparatus according to claim 6, wherein:

The wall structure has a heat insulating member made of a heat insulating material and a covering member made of a metal plate that covers the heat insulating member without gaps,
The substrate heat treatment apparatus according to claim 7, wherein:

The support member has an upper crosspiece engaged with the upper side of the substrate and a lower crosspiece engaged with the lower side of the substrate,
The substrate heat treatment apparatus according to claim 7, wherein:

A gas piping system capable of venting gas in the vertical direction of the storage space,
The substrate heat treatment apparatus according to claim 1, further comprising: