JP2004280121A - エッジ・フラグメントのタグ付けを使用してエッジ配置歪みを補正するサブミクロンic設計のための改善された方法および装置 - Google Patents
エッジ・フラグメントのタグ付けを使用してエッジ配置歪みを補正するサブミクロンic設計のための改善された方法および装置 Download PDFInfo
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- JP2004280121A JP2004280121A JP2004119603A JP2004119603A JP2004280121A JP 2004280121 A JP2004280121 A JP 2004280121A JP 2004119603 A JP2004119603 A JP 2004119603A JP 2004119603 A JP2004119603 A JP 2004119603A JP 2004280121 A JP2004280121 A JP 2004280121A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70541—Tagging, i.e. hardware or software tagging of features or components, e.g. using tagging scripts or tagging identifier codes for identification of chips, shots or wafers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
Abstract
【解決手段】本発明は、サブミクロン集積回路を設計するための改善された方法および装置を有利に提供する。集積回路(IC)設計にタグ識別名が提供される。タグ識別名は、隣接する形状の近接によるエッジ配置歪みを有するIC設計において、エッジ・フラグメントの特性を定義したものである。タグ識別名によって定義された特性をエッジ・フラグメントが有する場合、そのエッジ・フラグメントにタグが付けられる。タグを有する各エッジ・フラグメントに対して任意の補助形状が導入される。タグを有するエッジ・フラグメントおよび対応する補助形状に対して、モデルベース光学補正およびプロセス補正(OPC)が実行される。
【選択図】図6
Description
本発明は、集積回路(IC)設計の分野に関する。より詳細には、本発明は、ディープ・サブミクロンのICを設計する技術分野に関する。
集積回路(IC)が出現して以来、回路部品は益々小型化されている。ICは、極めて小さいパッケージ中にパッケージされた数百万個の部品を含む。より小型の集積化という新しい世代毎に、より多くの機能、つまりより多くの価値をICから引き出すことができるが、高度に集積化されたこれらのICを確実に製造するには、極めて重要な設計的挑戦が必要である。
本発明は、サブミクロン集積回路を設計するための改善された方法および装置を提供する。集積回路(IC)設計にタグ識別名が与えられる。タグ識別名は、隣接する形状の近接によるエッジ配置歪みを有するIC設計において、エッジ・フラグメントの特性を定義したものである。タグ識別名によって定義された特性をエッジ・フラグメントが有する場合、そのエッジ・フラグメントにタグが付けられる。タグを有する各エッジ・フラグメントに任意の補助形状が導入される。タグを有するエッジ・フラグメントおよび対応する補助形状に対して、モデルベースの光学補正およびプロセス補正(OPC)が実行される。
本発明を十分に理解するために、以下の詳細説明の中で多数の特定の詳細が説明されているが、本発明は、これらの特定の説明がなくても実施できること、示されている実施形態に制限されないこと、および様々な代替実施形態の中で実施できることについては、当分野の技術者には理解されよう。その他の実例では、良く知られている方法、手順、構成要素および回路については、詳細に記述されていない。
Claims (7)
- 1つまたは複数の隣接する形状の近接によるエッジ配置歪みを有するIC設計において、エッジ・フラグメントの特性を定義するための第1のタグ識別名を集積回路(IC)設計に与えるステップと、第1のエッジ・フラグメントが前記第1のタグ識別名によって定義された特性を有している場合、前記第1のエッジ・フラグメントに第1のタグを付けるステップと、前記第1のタグを有する各エッジ・フラグメントに対応する任意の補助形状を導入するステップと、前記第1のタグを有する各エッジ・フラグメントと、前記対応する任意の補助形状とに対して、モデルベース光学補正およびプロセス補正(OPC)を実行するステップとを含む方法。
- さらに、IC設計を記述する複数の幾何学データを、閉ループを画定する複数組の頂点に均一化するステップを含む請求項1に記載の方法。
- さらに、使用ルールに従って複数の幾何学データに頂点を追加することによって、IC設計を記述する前記複数の幾何学データをフラグメント化するステップを含む請求項1に記載の方法。
- 1つまたは複数の隣接する形状の近接によるエッジ配置歪みを有するIC設計において、エッジ・フラグメントの特性を定義するための第1のタグ識別名を集積回路(IC)設計に与え、第1のエッジ・フラグメントが前記第1のタグ識別名によって定義された特性を有している場合、前記第1のエッジ・フラグメントに第1のタグを付け、前記第1のタグを有する各エッジ・フラグメントに対応する任意の補助形状を導入し、前記第1のタグを有する各エッジ・フラグメントと、前記対応する任意の補助形状とに対して、モデルベース光学補正およびプロセス補正(OPC)を実行する複数の命令を記憶する記憶媒体を備えた製造品。
- 前記機械によって前記複数の命令が実行されると、さらに、IC設計を記述する複数の幾何学データを、閉ループを決める複数組の頂点に均一化する請求項4に記載の製造品。
- さらに、使用ルールに従って複数の幾何学データに頂点を追加することによって、IC設計を記述する前記複数の幾何学データをフラグメント化する請求項4に記載の製造品。
- 1つまたは複数の隣接する形状の近接によるエッジ配置歪みを有するIC設計において、エッジ・フラグメントの特性を定義するための第1のタグ識別名を集積回路(IC)設計に与える第1の回路と、第1のエッジ・フラグメントが前記第1のタグ識別名によって定義された特性を有している場合、前記第1のエッジ・フラグメントに第1のタグを付ける第2の回路と、前記第1のタグを有する各エッジ・フラグメントに対応する任意の補助形状を導入する第3の回路と、前記第1のタグを有する各エッジ・フラグメントと、前記対応する任意の補助形状とに対して、モデルベース光学補正およびプロセス補正(OPC)を実行する第4の回路とを備える装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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US09/302,557 US6249904B1 (en) | 1999-04-30 | 1999-04-30 | Method and apparatus for submicron IC design using edge fragment tagging to correct edge placement distortion |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2000615855A Division JP3603027B6 (ja) | 1999-04-30 | 2000-03-13 | エッジ・フラグメントのタグ付けを使用してエッジ配置歪みを補正するサブミクロンic設計のための改善された方法および装置 |
Publications (3)
Publication Number | Publication Date |
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JP2004280121A true JP2004280121A (ja) | 2004-10-07 |
JP2004280121A5 JP2004280121A5 (ja) | 2006-06-29 |
JP4104574B2 JP4104574B2 (ja) | 2008-06-18 |
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JP2004119603A Expired - Lifetime JP4104574B2 (ja) | 1999-04-30 | 2004-04-14 | エッジ・フラグメントのタグ付けを使用してエッジ配置歪みを補正するサブミクロンic設計のための改善された方法および装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6249904B1 (ja) |
JP (1) | JP4104574B2 (ja) |
AU (1) | AU4970800A (ja) |
WO (1) | WO2000067076A1 (ja) |
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US6081658A (en) * | 1997-12-31 | 2000-06-27 | Avant! Corporation | Proximity correction system for wafer lithography |
US6189136B1 (en) * | 1998-07-20 | 2001-02-13 | Philips Electronics, North America Corp. | Design level optical proximity correction methods |
-
1999
- 1999-04-30 US US09/302,557 patent/US6249904B1/en not_active Expired - Lifetime
-
2000
- 2000-03-13 WO PCT/US2000/006631 patent/WO2000067076A1/en active Application Filing
- 2000-03-13 AU AU49708/00A patent/AU4970800A/en not_active Abandoned
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2004
- 2004-04-14 JP JP2004119603A patent/JP4104574B2/ja not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7691543B2 (en) | 2005-05-02 | 2010-04-06 | Elpida Memory, Inc. | Mask data creation method |
Also Published As
Publication number | Publication date |
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JP4104574B2 (ja) | 2008-06-18 |
JP2002543471A (ja) | 2002-12-17 |
US6249904B1 (en) | 2001-06-19 |
WO2000067076A1 (en) | 2000-11-09 |
AU4970800A (en) | 2000-11-17 |
JP3603027B2 (ja) | 2004-12-15 |
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