JP2004251789A - 温度測定装置及び被処理基板 - Google Patents
温度測定装置及び被処理基板 Download PDFInfo
- Publication number
- JP2004251789A JP2004251789A JP2003043210A JP2003043210A JP2004251789A JP 2004251789 A JP2004251789 A JP 2004251789A JP 2003043210 A JP2003043210 A JP 2003043210A JP 2003043210 A JP2003043210 A JP 2003043210A JP 2004251789 A JP2004251789 A JP 2004251789A
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- substrate
- temperature
- temperature sensor
- processed
- dimensional
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 title claims abstract description 172
- 238000000034 method Methods 0.000 claims abstract description 33
- 238000012545 processing Methods 0.000 claims description 26
- 239000011810 insulating material Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 description 21
- 239000010408 film Substances 0.000 description 19
- 239000000523 sample Substances 0.000 description 17
- 238000009529 body temperature measurement Methods 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 14
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 238000001816 cooling Methods 0.000 description 9
- 238000005259 measurement Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000005679 Peltier effect Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000012827 research and development Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002313 adhesive film Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
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- 238000007796 conventional method Methods 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
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- 238000005530 etching Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 229910052618 mica group Inorganic materials 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
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- 238000007650 screen-printing Methods 0.000 description 1
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- 229910001220 stainless steel Inorganic materials 0.000 description 1
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- 238000007619 statistical method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Images
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003043210A JP2004251789A (ja) | 2003-02-20 | 2003-02-20 | 温度測定装置及び被処理基板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003043210A JP2004251789A (ja) | 2003-02-20 | 2003-02-20 | 温度測定装置及び被処理基板 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004251789A true JP2004251789A (ja) | 2004-09-09 |
| JP2004251789A5 JP2004251789A5 (enrdf_load_stackoverflow) | 2005-06-02 |
Family
ID=33026278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003043210A Pending JP2004251789A (ja) | 2003-02-20 | 2003-02-20 | 温度測定装置及び被処理基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004251789A (enrdf_load_stackoverflow) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007178253A (ja) * | 2005-12-28 | 2007-07-12 | Tokyo Electron Ltd | 温度測定装置および温度測定方法 |
| JP2007187619A (ja) * | 2006-01-16 | 2007-07-26 | Tokyo Electron Ltd | ウェハ型温度センサ、温度測定装置、熱処理装置および温度測定方法 |
| JP2010004037A (ja) * | 2008-06-16 | 2010-01-07 | Asml Netherlands Bv | リソグラフィ装置、メトロロジー装置及び当該装置の使用方法 |
| JP2011109040A (ja) * | 2009-11-20 | 2011-06-02 | Nikon Corp | 半導体基板ホルダ及び温度検出装置 |
| JP2013181931A (ja) * | 2012-03-05 | 2013-09-12 | Hitachi High-Technologies Corp | 温度計測装置 |
| JP2016128805A (ja) * | 2014-12-19 | 2016-07-14 | コミサリア ア レネルジー アトミック エ オ ゼネルジー アルテルナティブＣｏｍｍｉｓｓａｒｉａｔ Ａ Ｌ’Ｅｎｅｒｇｉｅ Ａｔｏｍｉｑｕｅ Ｅｔ Ａｕｘ Ｅｎｅｒｇｉｅｓ Ａｌｔｅｒｎａｔｉｖｅｓ | 差温センサ |
-
2003
- 2003-02-20 JP JP2003043210A patent/JP2004251789A/ja active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007178253A (ja) * | 2005-12-28 | 2007-07-12 | Tokyo Electron Ltd | 温度測定装置および温度測定方法 |
| JP2007187619A (ja) * | 2006-01-16 | 2007-07-26 | Tokyo Electron Ltd | ウェハ型温度センサ、温度測定装置、熱処理装置および温度測定方法 |
| JP2010004037A (ja) * | 2008-06-16 | 2010-01-07 | Asml Netherlands Bv | リソグラフィ装置、メトロロジー装置及び当該装置の使用方法 |
| US8982316B2 (en) | 2008-06-16 | 2015-03-17 | Asml Netherlands B.V. | Lithographic apparatus, a metrology apparatus and a method of using the apparatus |
| JP2011109040A (ja) * | 2009-11-20 | 2011-06-02 | Nikon Corp | 半導体基板ホルダ及び温度検出装置 |
| JP2013181931A (ja) * | 2012-03-05 | 2013-09-12 | Hitachi High-Technologies Corp | 温度計測装置 |
| JP2016128805A (ja) * | 2014-12-19 | 2016-07-14 | コミサリア ア レネルジー アトミック エ オ ゼネルジー アルテルナティブＣｏｍｍｉｓｓａｒｉａｔ Ａ Ｌ’Ｅｎｅｒｇｉｅ Ａｔｏｍｉｑｕｅ Ｅｔ Ａｕｘ Ｅｎｅｒｇｉｅｓ Ａｌｔｅｒｎａｔｉｖｅｓ | 差温センサ |
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