JP2004221369A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP2004221369A
JP2004221369A JP2003007764A JP2003007764A JP2004221369A JP 2004221369 A JP2004221369 A JP 2004221369A JP 2003007764 A JP2003007764 A JP 2003007764A JP 2003007764 A JP2003007764 A JP 2003007764A JP 2004221369 A JP2004221369 A JP 2004221369A
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Japan
Prior art keywords
forming
groove
semiconductor region
trench
oxide film
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Withdrawn
Application number
JP2003007764A
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English (en)
Japanese (ja)
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JP2004221369A5 (enrdf_load_stackoverflow
Inventor
Masaaki Ogino
正明 荻野
Hideaki Teranishi
秀明 寺西
Naoto Fujishima
直人 藤島
Setsuko Wakimoto
節子 脇本
Noriyuki Sugahara
紀之 須ケ原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Device Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Device Technology Co Ltd filed Critical Fuji Electric Device Technology Co Ltd
Priority to JP2003007764A priority Critical patent/JP2004221369A/ja
Publication of JP2004221369A publication Critical patent/JP2004221369A/ja
Publication of JP2004221369A5 publication Critical patent/JP2004221369A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]

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  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2003007764A 2003-01-16 2003-01-16 半導体装置の製造方法 Withdrawn JP2004221369A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003007764A JP2004221369A (ja) 2003-01-16 2003-01-16 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003007764A JP2004221369A (ja) 2003-01-16 2003-01-16 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2004221369A true JP2004221369A (ja) 2004-08-05
JP2004221369A5 JP2004221369A5 (enrdf_load_stackoverflow) 2005-11-04

Family

ID=32897760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003007764A Withdrawn JP2004221369A (ja) 2003-01-16 2003-01-16 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2004221369A (enrdf_load_stackoverflow)

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