JP2004207660A - Light emitting diode - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent disconnection in a wire at sealing, and to prevent peeling in an interface between a sealing material and a substrate and disconnection of the wire even at a high temperature processing in a light emitting diode. <P>SOLUTION: In the light emitting diode 1, the light emitting element 3 is mounted on a ceramic substrate 2, and a surface electrode is bonded to a prescribed position of a circuit pattern 7 by two gold wires 4. A glass lens 5 is covered from above where a necessarily minimum space in which the light emitting element 3 and the wires 4 are stored and a resin injected hole 9a are formed. Sealing glass 8 is applied to four corners of plate-like parts of the glass lens 5 by a quarter of a circle. The plate-like part of the glass lens 5 and the ceramic substrate 2 are rigidly sealed at a high temperature (before or after 400°C). Transparent silicon resin 6 whose viscosity is low and which does not have possibility of disconnection of the wires 4 is injected from the resin injectied hole 9a after cooling. The space is filled with it and the light emitting element 3 and the wires 4 are sealed. Transparent silicon resin 6 is thermo-set and the diode is completed. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention provides an SMD (Surface Mount Type) that can reduce the difference in the coefficient of thermal expansion and prevent wire disconnection and interface peeling by using a heat-resistant substrate and a glass lens with a low coefficient of thermal expansion for the light emitting element. ) It relates to a light emitting diode.
[0002]
In this specification, the LED chip itself is referred to as a “light emitting element”, and the entirety including an optical device such as a package resin or a lens system on which the LED chip is mounted is referred to as a “light emitting diode” or “LED”. I do.
[0003]
[Prior art]
[Patent Document 1] Japanese Patent Application Laid-Open No. H11-112025 [Patent Document 2] Japanese Patent Application Laid-Open No. H11-177129 FIG. 5 shows an example of a conventional SMD light emitting diode. As shown in FIG. 5, the LED 31 has a circuit pattern 37 provided on a glass epoxy substrate 32 by metal (gold or silver) plating, and a light emitting element 33 is mounted on the surface side of the circuit pattern 37. Conduction is achieved by bonding from the electrode on the surface to the circuit pattern 37 insulated from each other by two wires 34. The entire structure is sealed with a transparent epoxy resin 36 to protect the light emitting element 33 and to function as a lens.
[0004]
However, since the glass epoxy substrate 32 has poor heat dissipation, there is no escape for heat generated when the light emitting element 33 emits light. As a result, the temperature of the light emitting element 33 increases, the luminous efficiency decreases, and the life is shortened. Therefore, instead of using the printed circuit board 32, a light emitting element is mounted on one of a pair of metal lead plates, the other lead plate and the light emitting element are bonded by wires, and the whole is sealed with a transparent epoxy resin. The following types of LEDs have been developed. In this type of LED, heat escapes from the metal lead plate on which the light emitting element is mounted, so that the problem of heat dissipation is solved.
[0005]
However, since the coefficient of thermal expansion of the transparent epoxy resin that seals the whole is nearly five times as large as that of metal, when passing through a reflow furnace at a high temperature (about 200 ° C. to 300 ° C.) during surface mounting, the coefficient of thermal expansion is There is a possibility that a defect such as peeling at the interface with the substrate or disconnection of the wire due to the difference between them may occur.
[0006]
Further, in the technique described in Patent Document 1, a ceramic substrate having good thermal conductivity and a low coefficient of thermal expansion and excellent heat resistance is used as a substrate, terminal electrodes are provided at both ends of the substrate, and light is emitted at the center of the substrate. The element is mounted, two electrodes on the surface and two terminal electrodes are connected by wires, respectively, and the whole is molded with a transparent epoxy resin to form a package. In this LED as well, the ceramic substrate has good heat conductivity, so there is no problem of heat dissipation, but since the whole is molded with a transparent epoxy resin, defects such as peeling at the interface with the substrate and disconnection of the wire are likely to occur. Then there is no change.
[0007]
Therefore, in the technique described in Patent Document 2, low-melting-point (≒ 400 ° C.) glass is used instead of a transparent epoxy resin as a sealing material, and is directly mounted on a substrate without sandwiching the resin in the middle. The light emitting element is sealed. Thus, even when the substrate is passed through a high-temperature reflow furnace, the possibility of peeling or wire breakage at the interface with the substrate is low because both the low-melting glass and the ceramic substrate have low coefficients of thermal expansion.
[0008]
[Problems to be solved by the invention]
However, the low-melting glass has a much higher viscosity than a transparent thermosetting resin such as a transparent epoxy resin before being cured even in a molten state, so that the wire is disconnected at the time of sealing and peels off from the substrate or the light emitting element. Probability is high.
[0009]
Therefore, the present invention provides a light emitting diode in which the wire does not break even during sealing, and peeling or wire breaking does not occur at the interface between the sealing material and the substrate even during high temperature treatment such as a reflow furnace. Providing is an issue.
[0010]
[Means for Solving the Problems]
The light emitting diode according to claim 1, wherein the substrate has a low coefficient of thermal expansion and high heat resistance, a circuit pattern formed of a conductor on the substrate, a light emitting element mounted on a surface of the substrate, and the light emitting element. A metal member (wire) for conducting the circuit pattern, a glass lens covering the light emitting element and leaving only a space for accommodating the light emitting element and the metal member and a resin injection hole; A sealing material for sealing the glass lens; and a light-transmissive resin injected from the resin injection hole and filled in a space in which the light-emitting element and the metal member are accommodated.
[0011]
As described above, in this LED, a portion to be sealed with the light-transmitting resin is a minimum necessary space for accommodating the light-emitting element and the metal member, and the space and the resin injection hole are left around the light-emitting element with a glass lens. Covering. In addition, since a substrate having a low coefficient of thermal expansion and high heat resistance is used as the substrate, the difference in the coefficient of thermal expansion between the glass lens and the glass lens is small. And is not peeled off.
[0012]
Here, as a substrate having a low coefficient of thermal expansion and a high heat resistance, there is a ceramic substrate of aluminum nitride (AlN), alumina (Al ₂ O ₃ ) or the like.
[0013]
Further, since only the periphery of the wire is sealed by injecting a low-viscosity light-transmitting resin from the resin injection hole, there is no possibility that the wire is broken at the time of sealing. And, by making the portion to be sealed with the light-transmitting resin the minimum necessary space, the force applied to the wire due to the difference in the coefficient of thermal expansion can be minimized even when a high-temperature treatment such as a reflow furnace is performed. Therefore, disconnection of the wire can be prevented.
[0014]
In this way, a light emitting diode is obtained in which the wire does not break even during sealing, and peeling or wire breaking does not occur at the interface between the sealing material and the substrate even during high-temperature treatment such as in a reflow furnace.
[0015]
According to a second aspect of the present invention, in the light emitting diode according to the first aspect, the sealing material has a thermal expansion coefficient intermediate between that of the substrate and the glass lens.
[0016]
As a result, the difference in the coefficient of thermal expansion between the substrate and the sealing material, and the difference in the coefficient of thermal expansion between the sealing material and the glass lens is further reduced by the sealing material that enters between the substrate and the glass lens, which originally has a small difference in the coefficient of thermal expansion. In addition, peeling at each interface during high-temperature processing is more unlikely to occur.
[0017]
In this way, a light-emitting diode in which peeling at the interface between the glass lens, the sealing material, and the substrate is less likely to occur even during high-temperature treatment in a reflow furnace or the like.
[0018]
According to a third aspect of the present invention, in the light emitting diode according to the first or second aspect, the sealing material is sealing glass.
[0019]
The glass for sealing is also called “frit”, and can have various coefficients of thermal expansion by changing the components constituting the glass for sealing and the mixing ratio thereof. Therefore, the coefficient of thermal expansion between the substrate and the glass lens can be set to an intermediate value, and the difference in the coefficient of thermal expansion between the substrate and the sealing glass, and between the sealing glass and the glass lens, is further reduced. Peeling is less likely to occur. Further, the frit causes a chemical reaction between the substrate and the glass lens to seal, so that a stronger bonding force different from normal bonding can be obtained.
[0020]
In this way, a light-emitting diode in which peeling at the interface between the glass lens, the sealing material, and the substrate is more unlikely to occur even during high-temperature treatment in a reflow furnace or the like.
[0021]
According to a fourth aspect of the present invention, in the light emitting diode according to any one of the first to third aspects, the light transmitting resin is a transparent silicone resin.
[0022]
Transparent silicone resin is a light-transmitting resin that is extremely elastic even after thermosetting. Since the wire is absorbed, disconnection of the wire can be prevented.
[0023]
In this way, a light emitting diode in which the wire is less likely to break even during high-temperature treatment in a reflow furnace or the like is obtained.
[0024]
A light emitting diode according to a fifth aspect of the present invention is the light emitting diode according to any one of the first to fourth aspects, wherein the resin injection hole is provided on the substrate instead of being provided on the glass lens.
[0025]
As a result, the glass lens only needs to be provided with a minimum space for accommodating the light emitting element and the wire, and the processing of the glass lens becomes easy. Further, by providing two or more resin injection holes near the light emitting element avoiding directly below the wire, when light-transmissive resin is injected from one resin injection hole, air in the space is expelled from another resin injection hole. Therefore, it can be completely filled without leaving air bubbles.
[0026]
In this way, the wire is not broken even during sealing, and peeling or wire breaking at the interface between the sealing material and the substrate does not occur even during high-temperature treatment such as a reflow furnace, which further facilitates manufacturing. Light emitting diode.
[0027]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0028]
Embodiment 1
First, a light emitting diode according to a first embodiment of the present invention will be described with reference to FIGS. FIG. 1A is a plan view showing an entire configuration of a light emitting diode according to a first embodiment of the present invention, and FIG. 1B is a cross-sectional view taken along line AA of FIG. FIG. 2 is a longitudinal sectional view showing the entire configuration of the light emitting diode according to the first embodiment of the present invention, and is a sectional view taken along line BB of FIG. FIG. 3 is a longitudinal sectional view showing a method for mass-producing the light emitting diode according to the first embodiment of the present invention.
[0029]
As shown in FIG. 1, a ceramic substrate 2 of a through hole (not shown) in which a circuit pattern 7 is formed by silver plating has four corners cut out by quarter circles, and a substantially square glass is formed thereon. A plate-shaped portion around the lens 5 is placed. That is, as shown in the vertical cross-sectional view in the diagonal direction of FIG. 1B, the plate-like portions of the glass lens 5 protrude from the ceramic substrate 2 at the four corners of a substantially square. A light emitting element 3 is mounted on the ceramic substrate 2, and two electrodes provided on the surface of the light emitting element 3 are respectively connected to predetermined positions of a circuit pattern 7 of the ceramic substrate 2 by two gold wires 4. Bonding.
[0030]
Then, a glass lens 5 having a minimum necessary space for accommodating the light emitting element 3 and the wire 4 and the resin injection hole 9a is covered thereon, and four corners of the plate portion of the glass lens 5 are used as sealing materials. The sealing glass 8 is applied by a quarter circle, and the plate portion of the glass lens 5 and the ceramic substrate 2 are firmly sealed at a high temperature (around 400 ° C.). The mounted light emitting element 3 can withstand the high temperature of about 400 ° C., and the light emitting characteristics do not deteriorate at all. The ceramic substrate 2 is made of aluminum nitride (AlN) ceramic, has a low coefficient of thermal expansion (4.5 × 10 ⁻⁶ / ° C.), and has high heat resistance.
[0031]
Therefore, although the difference in the coefficient of thermal expansion between the glass lens 5 and the glass lens 5 having the same low coefficient of thermal expansion is small, since the sealing glass 8 has an intermediate coefficient of thermal expansion between the AlN substrate 2 and the glass lens 5, The difference in the coefficient of thermal expansion between the AlN substrate 2 and the sealing glass 8 and between the sealing glass 8 and the glass lens 5 is further reduced, and the AlN substrate 2 is subjected to a high-temperature treatment such as passing through a reflow furnace (about 200 ° C. to 300 ° C.). The interface between the substrate 2 and the sealing glass 8 and the interface between the sealing glass 8 and the glass lens 5 are not separated, and the AlN substrate 2 and the glass lens 5 are tightly sealed.
[0032]
The reason why the sealing glass 8 is applied to the four corners of the plate-shaped portion of the glass lens 5 is that the sealing glass 8 is generally black, so that the glass 8 is kept away from the light emitting element 3 so as not to adversely affect the light emission characteristics. is there. In the case of white sealing glass, it may be applied to a portion closer to the center.
[0033]
Next, the injection of the light transmitting resin will be described with reference to FIG. As shown in FIG. 2, on the lower surface of the glass lens 5 sealed with the AlN substrate 2, a minimum necessary space for accommodating the light emitting element 3 and the wire 4 and a resin injection hole 9a are formed. A transparent silicone resin 6 as a light-transmitting resin is injected from the resin injection hole 9a, and the space is filled to seal the light emitting element 3 and the wire 4. Since the viscosity of the transparent silicone resin 6 before heat curing is low, the wire 4 does not break due to the injection of the transparent silicone resin 6. Thereafter, the LED 1 of the first embodiment is completed by thermally curing the transparent silicone resin 6.
[0034]
As described above, by minimizing the volume to be sealed with the light transmitting resin 6, the tension applied to the wire 4 due to the difference in the coefficient of thermal expansion during the high-temperature processing is also minimized, and the wire 4 is prevented from breaking. Can be. Further, the use of the transparent silicone resin 6 as the light-transmitting resin allows the transparent silicone resin 6 to have elasticity even after thermosetting. The wire 4 can be more reliably prevented from being broken.
[0035]
In this way, in the LED 1 of the first embodiment, the wire 4 does not break even during sealing, and peeling at the interface between the sealing material and the substrate or the wire breakage during high-temperature processing such as a reflow furnace. The LED is free from disconnection.
[0036]
Next, a method of mass-producing the LED 1 according to the first embodiment will be described with reference to FIG. First, a ceramic (AlN) substrate 2 having many times the length and width of the LED 1 is prepared, a through hole (not shown) is opened in a necessary portion, and a circuit pattern 7 is formed by silver plating or the like. Then, cuts 2a are made in advance on the back surface of the AlN substrate 2 at the positions where they are finally cut and separated. Then, the light emitting elements 3 are successively mounted at predetermined positions on the surface of the AlN substrate 2, and gold wires 4 are bonded to two surface electrodes of the mounted light emitting elements 3, respectively. Each of the circuit patterns 7 is bonded at a predetermined position.
[0037]
When the mounting of all the light emitting elements 3 and the wires 4 is completed in this way, the glass lens 5 is covered from above and sealed. That is, as shown in FIG. 3, the minimum required space 9 for accommodating the light emitting element 3 and the wire 4 on the lower surface of the glass lens 5 and the resin injection hole 9a are connected vertically and horizontally, and the AlN substrate 2 Ones of almost the same size are prepared. Then, glass for sealing is applied to a predetermined position on the upper surface of the AlN substrate 2 or the lower surface of the glass lens 5, and a glass glass 5 is connected from above the AlN substrate 2, and the sealing temperature (400) (Around ℃).
[0038]
After cooling, the LED 1 (each of which is still filled with a sealing resin) is cleaved using a cut 2a on the lower surface of the AlN substrate 2 which has been previously inserted, or cut by a dicing machine or the like. Not). Then, as described with reference to FIG. 2, the transparent silicone resin is injected from the resin injection hole 9a to fill the space 9, the light emitting element 3 and the wire 4 are sealed, and the transparent silicone resin is thermally cured. Thus, the LEDs 1 of the first embodiment can be mass-produced.
[0039]
Embodiment 2
Next, a light emitting diode according to a second embodiment of the present invention will be described with reference to FIG. FIG. 4A is a plan view illustrating the entire configuration of the light emitting diode according to the second embodiment of the present invention, and FIG. 4B is a cross-sectional view taken along line CC of FIG.
[0040]
As shown in FIG. 4, the LED 11 according to the second embodiment has four corners of a through-hole (not shown) in which a circuit pattern 17 is formed by silver plating on the ceramic substrate 12 similarly to the first embodiment. The plate-shaped portion around the substantially square glass lens 15 is mounted thereon. The ceramic substrate 12 is also made of aluminum nitride (AlN), and a light emitting element 13 is mounted on the AlN substrate 12, and two electrodes provided on the surface of the light emitting element 13 are two gold wires. At 14, each is bonded to a predetermined position of the circuit pattern 17 of the AlN substrate 12.
[0041]
Then, a glass lens 15 in which a necessary minimum space for accommodating the light emitting element 13 and the wire 14 is formed is placed thereon, and sealing glass 18 as a sealing material is provided at four corners of the plate portion of the glass lens 15. Is applied by quarter circles, and the plate-like portion of the glass lens 15 and the AlN substrate 12 are firmly sealed at a high temperature (around 400 ° C.). The mounted light emitting element 13 can withstand such a high temperature of about 400 ° C., and the light emitting characteristics do not deteriorate at all. The AlN substrate 12 has a low coefficient of thermal expansion and a high heat resistance.
[0042]
Therefore, although the difference in the coefficient of thermal expansion between the glass lens 15 and the glass lens 15 having a low coefficient of thermal expansion is small, the sealing glass 18 also has a coefficient of thermal expansion between the AlN substrate 12 and the glass lens 15 in the second embodiment. Is used, the difference in the thermal expansion coefficient between the AlN substrate 12 and the sealing glass 18 and between the sealing glass 18 and the glass lens 15 is further reduced, such as through a reflow furnace (about 200 ° C. to 300 ° C.). The interface between the AlN substrate 12 and the glass for sealing 18 and the interface between the glass for sealing 18 and the glass lens 15 do not peel off even after the high-temperature treatment, and the AlN substrate 12 and the glass lens 15 are tightly sealed.
[0043]
Next, injection of the light transmitting resin will be described. As shown in FIG. 4, in the second embodiment, two positions of the AlN substrate 12 are communicated with the minimum necessary space for accommodating the light emitting element 13 and the wire 14 provided on the lower surface of the glass lens 15. A resin injection hole 19 is formed. A transparent silicone resin 16 as a light-transmitting resin is injected from these resin injection holes 19, and the space is filled to seal the light emitting element 13 and the wire 14. Since the viscosity of the transparent silicone resin 16 before heat curing is extremely low, the wire 14 does not break due to the injection of the transparent silicone resin 16.
[0044]
Here, if the transparent silicone resin 16 is injected only from one of the resin injection holes 19, the air is expelled from the other resin injection hole 19, so that the filling can be easily performed without leaving air bubbles. Thereafter, the LED 11 of the second embodiment is completed by thermally curing the transparent silicone resin 16.
[0045]
As described above, by minimizing the volume to be sealed with the light-transmitting resin 16, the tension applied to the wire 14 due to the difference in the coefficient of thermal expansion during high-temperature processing is also minimized, and the wire 14 is prevented from being disconnected. Can be. Further, the use of the transparent silicone resin 16 as the light-transmitting resin allows the transparent silicone resin 16 to have elasticity even after thermosetting. The wire 14 can be more reliably prevented from breaking. Further, since the two resin injection holes 19 are formed in the AlN substrate 12, the injection of the transparent silicone resin 16 is facilitated, and the processing of the glass lens 15 is also facilitated.
[0046]
In this manner, in the LED 11 of the second embodiment, the wire 14 does not break even during sealing, and peeling at the interface between the sealing material and the substrate during high-temperature processing such as in a reflow furnace or the wire There is no disconnection and the LED is easier to manufacture.
[0047]
In each of the above-described embodiments, the circuit patterns 7 and 17 are formed by silver plating having a high blue reflectance, since a blue light-emitting element is used as the light-emitting elements 3 and 13. An element may be used. When a red light emitting element is used, it is desirable to form a circuit pattern by gold plating having high red reflectance.
[0048]
Further, in each of the above embodiments, the case where AlN is used as the substrate material has been described. However, any material having a low coefficient of thermal expansion and high heat resistance may be used. However, a material having high thermal conductivity is desirable, for example, Al ₂ O ₃ or the like.
[0049]
Further, in each of the above embodiments, the transparent silicone resin is used as the light transmitting resin for sealing the light emitting element and the wire, but other resin materials such as a transparent epoxy resin may be used.
[0050]
In addition, the light emitting element is not limited to one in which an electrode is formed on an upper surface and is electrically connected by a wire, and may be one in which an electrode is formed on a lower surface and is electrically connected by a bump or the like. .
[0051]
The configuration, shape, quantity, material, size, connection relationship, and the like of other portions of the light emitting diode are not limited to the above embodiments.
[0052]
【The invention's effect】
As described above, the light emitting diode according to the first aspect of the present invention includes a substrate having a low coefficient of thermal expansion and high heat resistance, a circuit pattern formed of a conductor on the substrate, and a light emitting device mounted on the surface of the substrate. An element, a metal member (wire) that establishes conduction between the light emitting element and the circuit pattern, a glass lens that covers the periphery of the light emitting element except for a space for accommodating the light emitting element and the wire and a resin injection hole, A sealing material for sealing the substrate surface and the glass lens; and a light transmissive resin injected from the resin injection hole and filled in a space in which the light emitting element and the wire fit.
[0053]
As described above, in this LED, the part to be sealed with the light-transmitting resin is a necessary minimum space for the light emitting element and the wire, and the space around the light emitting element is covered with the glass lens leaving the space and the resin injection hole. I have. In addition, since a substrate having a low coefficient of thermal expansion and high heat resistance is used as the substrate, the difference in the coefficient of thermal expansion between the glass lens and the glass lens is small. And is not peeled off.
[0054]
Further, since only the periphery of the wire is sealed by injecting a low-viscosity light-transmitting resin from the resin injection hole, there is no possibility that the wire is broken at the time of sealing. And, by making the portion to be sealed with the light-transmitting resin the minimum necessary space, the force applied to the wire due to the difference in the coefficient of thermal expansion can be minimized even when a high-temperature treatment such as a reflow furnace is performed. Therefore, disconnection of the wire can be prevented.
[0055]
In this way, a light emitting diode is obtained in which the wire does not break even during sealing, and peeling or wire breaking does not occur at the interface between the sealing material and the substrate even during high-temperature treatment such as in a reflow furnace.
[0056]
According to a second aspect of the present invention, in the light emitting diode according to the first aspect, the sealing material has a thermal expansion coefficient intermediate between that of the substrate and the glass lens.
[0057]
As a result, the difference in the coefficient of thermal expansion between the substrate and the sealing material, and the difference in the coefficient of thermal expansion between the sealing material and the glass lens is further reduced by the sealing material that enters between the substrate and the glass lens, which originally has a small difference in the coefficient of thermal expansion. In addition, peeling at each interface during high-temperature processing is more unlikely to occur.
[0058]
In this way, a light-emitting diode in which peeling at the interface between the glass lens, the sealing material, and the substrate is less likely to occur even during high-temperature treatment in a reflow furnace or the like.
[0059]
According to a third aspect of the present invention, in the light emitting diode according to the first or second aspect, the sealing material is sealing glass.
[0060]
The glass for sealing is also called “frit”, and can have various coefficients of thermal expansion by changing the components constituting the glass for sealing and the mixing ratio thereof. Therefore, the coefficient of thermal expansion between the substrate and the glass lens can be set to an intermediate value, and the difference in the coefficient of thermal expansion between the substrate and the sealing glass, and between the sealing glass and the glass lens, is further reduced. Peeling is less likely to occur. Further, the frit causes a chemical reaction between the substrate and the glass lens to seal, so that a stronger bonding force different from normal bonding can be obtained.
[0061]
In this way, a light-emitting diode in which peeling at the interface between the glass lens, the sealing material, and the substrate is more unlikely to occur even during high-temperature treatment in a reflow furnace or the like.
[0062]
According to a fourth aspect of the present invention, in the light emitting diode according to any one of the first to third aspects, the light transmitting resin is a transparent silicone resin.
[0063]
Transparent silicone resin is a light-transmitting resin that is extremely elastic even after thermosetting. Since the wire is absorbed, disconnection of the wire can be prevented.
[0064]
In this way, a light-emitting diode in which the wire is less likely to break even during a high-temperature treatment in a reflow furnace or the like is obtained.
[0065]
A light emitting diode according to a fifth aspect of the present invention is the light emitting diode according to any one of the first to fourth aspects, wherein the resin injection hole is provided on the substrate instead of being provided on the glass lens.
[0066]
Thus, the glass lens only needs to be provided with a minimum space in which the light emitting element and the wire can be accommodated, and the processing of the glass lens becomes easy. Also, by providing two or more resin injection holes near the light emitting element avoiding directly below the wire, when light transmitting resin is injected from one resin injection hole, air in the space is expelled from another resin injection hole. Therefore, it can be completely filled without leaving air bubbles.
[0067]
In this way, the wire does not break even during sealing, and no peeling or breaking of the wire occurs at the interface between the sealing material and the substrate during high-temperature treatment such as in a reflow furnace, which further facilitates manufacturing. Light emitting diode.
[Brief description of the drawings]
FIG. 1A is a plan view showing an entire configuration of a light emitting diode according to a first embodiment of the present invention, and FIG. 1B is a cross-sectional view taken along line AA of FIG.
FIG. 2 is a longitudinal sectional view showing the entire configuration of the light emitting diode according to the first embodiment of the present invention, and is a sectional view taken along line BB of FIG. 1 (a).
FIG. 3 is a longitudinal sectional view illustrating a method for mass-producing the light emitting diode according to the first embodiment of the present invention.
FIG. 4A is a plan view showing an entire configuration of a light emitting diode according to a second embodiment of the present invention, and FIG. 4B is a cross-sectional view taken along line CC of FIG.
FIG. 5 is a longitudinal sectional view showing an example of a conventional SMD light emitting diode.
[Explanation of symbols]
1,11 light emitting diode 2,12 substrate 3,13 light emitting element 4,14 wire 5,15 glass lens 6,16 light transmitting resin 7,17 circuit pattern 8,18 sealing material 9 space 9a, 19 resin injection hole

Claims (5)

A substrate with low coefficient of thermal expansion and high heat resistance;
A circuit pattern formed of a conductor on the substrate,
A light-emitting element mounted on the substrate surface,
A metal member for conducting the light emitting element and the circuit pattern,
A glass lens covering the light emitting element and leaving only a space and a resin injection hole for the light emitting element and the metal member,
A sealing material for sealing the substrate surface and the glass lens,
A light-emitting diode, comprising: a light-transmitting resin injected from the resin injection hole to fill a space in which the light-emitting element and the metal member are accommodated. The light emitting diode according to claim 1, wherein the sealing material has a coefficient of thermal expansion between the substrate and the glass lens. The light emitting diode according to claim 1, wherein the sealing material is sealing glass. The light emitting diode according to claim 1, wherein the light transmitting resin is a transparent silicone resin. The light emitting diode according to any one of claims 1 to 4, wherein the resin injection hole is provided in the substrate instead of being provided in the glass lens.

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