JP2004200674A - Hf制御されるscrタイプのスイッチ - Google Patents
Hf制御されるscrタイプのスイッチ Download PDFInfo
- Publication number
- JP2004200674A JP2004200674A JP2003404624A JP2003404624A JP2004200674A JP 2004200674 A JP2004200674 A JP 2004200674A JP 2003404624 A JP2003404624 A JP 2003404624A JP 2003404624 A JP2003404624 A JP 2003404624A JP 2004200674 A JP2004200674 A JP 2004200674A
- Authority
- JP
- Japan
- Prior art keywords
- high frequency
- switch
- frequency
- control
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000004804 winding Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 2
- 238000001465 metallisation Methods 0.000 description 13
- 238000002955 isolation Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000002457 bidirectional effect Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/722—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7408—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a capacitor or a resistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
【解決手段】整流されていない高周波電圧の数周期をスイッチゲートに印加することから成り、1つのHF半波の電力はSCRタイプのスイッチを始動するには不充分である。HF信号は従来のゲート接触の代わりに、絶縁膜を介して容量結合された半導体コンポーネントの感応エリアに向かい、感応サイリスタとして動作する。この絶縁膜はシリコン半導体コンポーネントで使用されるシリコン酸化膜層のひとつであっても良い。
【選択図】 図4
Description
11、21 アノード電流
20 ゲート/カソード電圧
41 N型カソード領域
42 P型のウェル
43 低濃度ドープされたN型層
44 P型アノード領域
45、72 絶縁層
51 N型領域
52 P型領域
53 より高濃度ドープされたN型領域
61 高周波線
71 巻線
73 基板
Claims (12)
- 整流されていない高周波電圧の数周期をスイッチゲートに印加することから成り、1つのHF半波の電力はSCRタイプのスイッチを始動するには不充分であることを特徴とするSCRタイプのスイッチを制御する方法。
- 前記HF電圧は10kHz〜数GHzの選択された周波数で振動することを特徴とする請求項1に記載の制御方法。
- 前記高周波は、コンポーネントの感応エリアの上に形成される絶縁層を経由して印加されることを特徴とする請求項1に記載の方法。
- 前記高周波はサイリスタのゲート領域に印加されることを特徴とする請求項3に記載の方法。
- 前記高周波はトライアックのゲート領域に印加されることを特徴とする請求項3に記載の方法。
- 前記高周波は高周波線を経由して印加されることを特徴とする請求項3に記載の方法。
- 前記高周波は巻線を経由して印加されることを特徴とする請求項3に記載の方法。
- 2つの主電極と、絶縁層(45)上に形成されコンポーネントの始動領域の上に配置される少なくとも1つの制御電極とを備え、該制御電極は整流されていないHF電源に接続されることを特徴とするSCRタイプのスイッチコンポーネント。
- 前記制御電極はサイリスタのゲート領域(42)上に配置されることを特徴とする請求項8に記載の方法。
- 前記制御電極はトライアックのゲート領域(52)上に配置されることを特徴とする請求項8に記載の方法。
- 前記制御電極は高周波線(61)であることを特徴とする請求項8に記載の方法。
- 前記高周波は巻線(71)を経由して印加されることを特徴とする請求項8に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0215322 | 2002-12-04 | ||
FR0215322 | 2002-12-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004200674A true JP2004200674A (ja) | 2004-07-15 |
JP4708699B2 JP4708699B2 (ja) | 2011-06-22 |
Family
ID=32310005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003404624A Expired - Fee Related JP4708699B2 (ja) | 2002-12-04 | 2003-12-03 | 高周波制御されるscrタイプのスイッチ |
Country Status (3)
Country | Link |
---|---|
US (1) | US7561408B2 (ja) |
EP (1) | EP1427107B1 (ja) |
JP (1) | JP4708699B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7461181B2 (en) * | 2005-04-25 | 2008-12-02 | Emulex Design & Manufacturing Corporation | Programming of configuration serial EEPROM via an external connector |
FR2895600A1 (fr) * | 2005-12-26 | 2007-06-29 | St Microelectronics Sa | Commutateur bidirectionnel a commande hf |
FR2960097A1 (fr) * | 2010-05-11 | 2011-11-18 | St Microelectronics Tours Sas | Composant de protection bidirectionnel |
EP2528233A1 (en) * | 2011-05-24 | 2012-11-28 | Siemens Aktiengesellschaft | Coupling circuit for coupling a control circuit to a semiconductor switch |
KR102269017B1 (ko) | 2016-09-05 | 2021-06-25 | 지멘스 악티엔게젤샤프트 | 전기 에너지 저장 유닛을 방전시키기 위한 방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4834663A (ja) * | 1971-09-07 | 1973-05-21 | ||
JPS58500876A (ja) * | 1981-04-16 | 1983-05-26 | スクエア−デイ−カンパニ− | ソリツド・ステ−ト消弧素子 |
JPS62290349A (ja) * | 1986-06-05 | 1987-12-17 | Semiconductor Res Found | サイリスタ装置 |
JPH098300A (ja) * | 1995-04-20 | 1997-01-10 | Toshiba Corp | 半導体装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3344310A (en) * | 1966-01-13 | 1967-09-26 | Gen Electric | Universal lamp control circuit with high voltage producing means |
US3663950A (en) * | 1970-01-19 | 1972-05-16 | Struthers Dunn | Quad ac power switch with synch |
US3598889A (en) * | 1970-05-27 | 1971-08-10 | Henry N Switsen | Music frequency selector circuit |
US3824444A (en) * | 1973-07-05 | 1974-07-16 | Cutler Hammer Inc | Controlled rectifier systems and flexible gate pulse control circuits therefor |
US4296296A (en) * | 1979-08-13 | 1981-10-20 | General Electric Company | Controllable-duty-cycle power supply for microwave oven magnetron and the like |
BE889496A (fr) * | 1981-07-03 | 1981-11-03 | Dumont Gilbert C | Inverseur statique polyphase |
JPS5846678A (ja) * | 1981-09-14 | 1983-03-18 | Oki Electric Ind Co Ltd | Pnpn半導体スイツチ |
US4630092A (en) * | 1984-06-04 | 1986-12-16 | General Motors Corporation | Insulated gate-controlled thyristor |
US4760432A (en) * | 1985-11-04 | 1988-07-26 | Siemens Aktiengesellschaft | Thyristor having controllable emitter-base shorts |
JP2612690B2 (ja) * | 1986-06-06 | 1997-05-21 | 株式会社小糸製作所 | 交流電力制御装置 |
US4713723A (en) * | 1986-07-01 | 1987-12-15 | Kaufman Lance R | Isolation transformer |
JP2633585B2 (ja) * | 1987-10-16 | 1997-07-23 | 株式会社東芝 | 半導体装置 |
US5546038A (en) * | 1995-06-30 | 1996-08-13 | Harris Corporation | SCR inductor transient clamp |
DE19718432A1 (de) * | 1996-05-09 | 1997-11-13 | Fuji Electric Co Ltd | Thyristor mit isoliertem Gate |
US20020066904A1 (en) * | 1999-12-03 | 2002-06-06 | Han-Tzong Yuan | Solid-state relay having integrated organic light-emitting diodes |
-
2003
- 2003-12-02 EP EP03300242A patent/EP1427107B1/fr not_active Expired - Fee Related
- 2003-12-03 US US10/727,189 patent/US7561408B2/en not_active Expired - Lifetime
- 2003-12-03 JP JP2003404624A patent/JP4708699B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4834663A (ja) * | 1971-09-07 | 1973-05-21 | ||
JPS58500876A (ja) * | 1981-04-16 | 1983-05-26 | スクエア−デイ−カンパニ− | ソリツド・ステ−ト消弧素子 |
JPS62290349A (ja) * | 1986-06-05 | 1987-12-17 | Semiconductor Res Found | サイリスタ装置 |
JPH098300A (ja) * | 1995-04-20 | 1997-01-10 | Toshiba Corp | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
EP1427107A1 (fr) | 2004-06-09 |
US20040135620A1 (en) | 2004-07-15 |
EP1427107B1 (fr) | 2011-09-14 |
JP4708699B2 (ja) | 2011-06-22 |
US7561408B2 (en) | 2009-07-14 |
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