JP2004186186A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
- Publication number
- JP2004186186A JP2004186186A JP2002347828A JP2002347828A JP2004186186A JP 2004186186 A JP2004186186 A JP 2004186186A JP 2002347828 A JP2002347828 A JP 2002347828A JP 2002347828 A JP2002347828 A JP 2002347828A JP 2004186186 A JP2004186186 A JP 2004186186A
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- Prior art keywords
- active layer
- insulating film
- layer
- groove
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002347828A JP2004186186A (ja) | 2002-11-29 | 2002-11-29 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002347828A JP2004186186A (ja) | 2002-11-29 | 2002-11-29 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004186186A true JP2004186186A (ja) | 2004-07-02 |
| JP2004186186A5 JP2004186186A5 (enExample) | 2005-09-02 |
Family
ID=32750898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002347828A Abandoned JP2004186186A (ja) | 2002-11-29 | 2002-11-29 | 半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004186186A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009054807A (ja) * | 2007-08-27 | 2009-03-12 | Sanken Electric Co Ltd | ヘテロ接合型電界効果半導体装置 |
-
2002
- 2002-11-29 JP JP2002347828A patent/JP2004186186A/ja not_active Abandoned
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009054807A (ja) * | 2007-08-27 | 2009-03-12 | Sanken Electric Co Ltd | ヘテロ接合型電界効果半導体装置 |
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