JP2004186186A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP2004186186A
JP2004186186A JP2002347828A JP2002347828A JP2004186186A JP 2004186186 A JP2004186186 A JP 2004186186A JP 2002347828 A JP2002347828 A JP 2002347828A JP 2002347828 A JP2002347828 A JP 2002347828A JP 2004186186 A JP2004186186 A JP 2004186186A
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JP
Japan
Prior art keywords
active layer
insulating film
layer
groove
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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JP2002347828A
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English (en)
Japanese (ja)
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JP2004186186A5 (enExample
Inventor
Hideki Kimura
英樹 木村
Hisao Kawasaki
久夫 川崎
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Toshiba Corp
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Toshiba Corp
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Priority to JP2002347828A priority Critical patent/JP2004186186A/ja
Publication of JP2004186186A publication Critical patent/JP2004186186A/ja
Publication of JP2004186186A5 publication Critical patent/JP2004186186A5/ja
Abandoned legal-status Critical Current

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JP2002347828A 2002-11-29 2002-11-29 半導体装置およびその製造方法 Abandoned JP2004186186A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002347828A JP2004186186A (ja) 2002-11-29 2002-11-29 半導体装置およびその製造方法

Applications Claiming Priority (1)

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JP2002347828A JP2004186186A (ja) 2002-11-29 2002-11-29 半導体装置およびその製造方法

Publications (2)

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JP2004186186A true JP2004186186A (ja) 2004-07-02
JP2004186186A5 JP2004186186A5 (enExample) 2005-09-02

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ID=32750898

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JP2002347828A Abandoned JP2004186186A (ja) 2002-11-29 2002-11-29 半導体装置およびその製造方法

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JP (1) JP2004186186A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009054807A (ja) * 2007-08-27 2009-03-12 Sanken Electric Co Ltd ヘテロ接合型電界効果半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009054807A (ja) * 2007-08-27 2009-03-12 Sanken Electric Co Ltd ヘテロ接合型電界効果半導体装置

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