JP2004170909A - Electro-optical device and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electro-optical device which can display images having high quality, such as higher brightness, by achieving a high aperture ratio/higher contrast. <P>SOLUTION: The electro-optical device is provided with, on a substrate, TFTs (Thin Film Transistors) (30), scanning lines (3a), data lines (6a), storage capacitors (70) and shielding layers (400), etc., while making a portion of a laminated structure. The respective components are formed in light shielding regions having a complementary relationship with regions where pixel electrodes (9a) are formed. As a result, the aperture ratio of the pixels is enhanced. <P>COPYRIGHT: (C)2004,JPO

Description

  The present invention belongs to the technical field of electro-optical devices such as liquid crystal devices and electronic devices. The present invention also belongs to the technical field such as an electrophoresis apparatus such as electronic paper, an EL (electroluminescence) apparatus, and an apparatus using an electron-emitting device (Field Emission Display and Surface-Conduction Electron-Emitter Display).

  Conventionally, an electro-optical device such as a liquid crystal device in which an image can be displayed by interposing an electro-optical material such as a liquid crystal between a pair of substrates and transmitting light so as to penetrate them is known. I have. Here, “displaying an image” refers to, for example, changing the state of an electro-optical material for each pixel, thereby changing the light transmittance, and making light having different gradations visible for each pixel. Is achieved.

  Such an electro-optical device includes, on one of the pair of substrates, pixel electrodes arranged in a matrix, scanning lines and data lines provided so as to sew between the pixel electrodes, and pixel switching. A device that can be driven in an active matrix by providing a TFT (Thin Film Transistor) or the like as an element for use is provided. In the electro-optical device capable of active matrix driving, the TFT is provided between the pixel electrode and the data line and controls conduction between the two. The TFT is electrically connected to a scanning line and a data line. According to this, ON / OFF of the TFT is controlled through the scanning line, and when the TFT is ON, the image signal supplied through the data line is applied to the pixel electrode, that is, light transmission is performed for each pixel. It is possible to change the rate.

  In the electro-optical device as described above, the various configurations as described above are formed on one substrate, but when these are developed in a plane, a large area is required, and the pixel aperture ratio, that is, In addition, there is a possibility that the ratio of the region through which light should pass through to the entire region of the substrate may be reduced. Therefore, in the related art, a method of three-dimensionally configuring the above-described various elements, that is, a method of laminating and configuring the various elements via an interlayer insulating film has been adopted. More specifically, a TFT and a scanning line having a function as a gate electrode film of the TFT are first formed on a substrate, a data line is formed thereon, and a pixel electrode is formed thereon. In this way, the size of the device can be reduced, and the aperture ratio of the pixels can be improved by appropriately setting the arrangement of various elements. For example, see Patent Document 1.

JP 2002-156652 A

  By the way, in such an electro-optical device, there is a basic demand for displaying a high-quality image, and in order to achieve this, particularly, a high aperture ratio of the electro-optical device, a high contrast of an image, and the like are required. It has been demanded. Here, the “aperture ratio” can be expressed by the total area of the substrate constituting the electro-optical device, or the ratio of the area of the light transmitting region to the total area of the image display region on the substrate, and this value can be obtained. The larger is the brighter the image. Further, in order to achieve high contrast of an image, for example, a potential storage characteristic of the pixel electrode is enhanced by electrically connecting a storage capacitor to the TFT and the pixel electrode.

  On the other hand, in the electro-optical device, further miniaturization and higher definition and high-frequency driving are required. However, it is difficult to simultaneously achieve the above-described high aperture ratio and miniaturization. This is because, if an image having a certain brightness or higher is to be displayed, an aperture ratio of a certain level or more is required. Must be kept almost constant. That is, in this case, it is substantially required to increase the area of the light transmission region.

  In addition, in order to achieve a high aperture ratio, it is not necessary to simply increase the area of the light transmission region. Doing so will affect the surrounding configuration. For example, as described above, in an electro-optical device, a storage capacitor may be provided in order to realize a high contrast. However, on the assumption that such a storage capacitor exists, a high aperture ratio is required. In order to achieve this, the storage capacity must be reduced. However, simply reducing the storage capacitance leads to a corresponding increase in the resistance of the pair of electrodes constituting the storage capacitor, and as a result, crosstalk and burn-in occur due to this. This causes a new problem. In the related art, the pair of electrodes has been formed of polysilicon, WSi (tungsten silicide), or the like. However, since the resistance of these materials cannot be said to be low, the above-described electrodes are used. The problem was even more serious.

  Alternatively, in addition to the storage capacitor described above, a TFT as a pixel switching element is provided on the substrate, but when realizing a high aperture ratio, light does not enter the TFT or its semiconductor layer. It is necessary to keep it. This is because such light incidence may cause a light leak current in the semiconductor layer and cause flicker or the like on an image. In realizing a high aperture ratio, it is generally considered that the area of the light shielding region is relatively reduced as compared with the area of the light transmitting region. It has a serious face. That is, the danger of light incidence on the semiconductor layer is greater.

  As described above, simply increasing the area of the light transmitting region cannot achieve a high aperture ratio, and in order to achieve the object, comprehensive measures from all aspects are taken. There is a need.

  The present invention has been made in view of the above problems, and provides an electro-optical device capable of displaying an image with high quality such as a brighter image by achieving a high aperture ratio and a high contrast. As an issue. Another object of the present invention is to provide an electronic apparatus including such an electro-optical device.

  In order to solve the above-mentioned problems, an electro-optical device according to the present invention has a data line extending on a substrate in a first direction, a scanning line extending in a second direction intersecting the data line, and the data line. An electro-optical device comprising a pixel electrode and a thin film transistor arranged so as to correspond to an intersecting region of a line and the scanning line, forming a part of a laminated structure, further comprising a semiconductor of the thin film transistor on the substrate. A storage capacitor formed above the layer and below the pixel electrode and electrically connected to a pixel potential, and an upper light-shielding film disposed between the data line and the pixel electrode; Wherein the upper light-shielding film defines at least a corner of a pixel opening area, and the scanning line, the data line, and the storage capacitor are formed in the light-shielding area. To.

  According to the electro-optical device of the present invention, first, since the scanning lines and the data lines, the pixel electrodes, and the thin film transistors are provided, active matrix driving can be performed. Further, in the electro-optical device, since the above-mentioned various components form a part of a laminated structure, miniaturization of the entire device can be achieved, and an appropriate arrangement of the various components is realized. By doing so, the pixel aperture ratio can be improved.

  Further, in the present invention, since the light-shielding layer is provided between the data line and the pixel electrode, it is possible to prevent the occurrence of capacitive coupling between the two. That is, it is possible to reduce the possibility of the potential fluctuation or the like occurring in the pixel electrode due to the energization of the data line, and it is possible to display a higher quality image.

In particular, according to the present invention, the provision of the storage capacitor can improve the potential holding characteristics of the pixel electrode. This makes it possible to display a high-contrast image.
Further, in the present invention, the dielectric film constituting the storage capacitor may be composed of a single layer or a plurality of layers including a film having a higher dielectric constant than a silicon oxide film.

  Therefore, in the storage capacitor according to the present invention, the charge storage characteristics are more excellent than in the past, whereby the potential holding characteristics in the pixel electrode can be further improved, and a higher quality image can be displayed. Becomes possible. Further, since the capacitance value of the storage capacitor can be increased in this manner, the area of the pair of electrodes constituting the storage capacitor can be reduced as compared with the related art. Therefore, according to the present invention, a higher aperture ratio can be achieved at the same time.

  In addition, in the present invention, the scanning line, the data line, the thin film transistor, and the storage capacitor are formed in a light shielding region. As a result, a configuration in which various elements in the laminated structure are not located in a region substantially coinciding with the light transmission region is realized, and the electro-optical device according to the present invention realizes and maintains an extremely high aperture ratio. Becomes possible. In such a configuration, even if the storage capacitor is formed in the light-shielding region, no particular problem occurs. That is, first, regarding the storage capacitor, in forming the storage capacitor so as to be confined in the light-shielding region, even if the planar spread of the pair of electrodes constituting the storage capacitor is somewhat suppressed, the storage capacitor is: As described above, if a dielectric film including a high dielectric constant material is provided and high charge storage characteristics are provided, almost desired performance can be exhibited. Second, as is clear from the above-described effects, the light-shielding layer can exhibit predetermined performance as long as it is formed so as to cover at least the data lines. If necessary, according to the present invention, the performance required for the various components in the laminated structure is fully exhibited (for example, high contrast of an image by installing a storage capacitor), and at the same time, these various components are By being installed in the light shielding area, it is possible to realize and maintain a very high aperture ratio. As described above, according to the electro-optical device of the present invention, by achieving a high aperture ratio and a high contrast, it is possible to display an image having a higher quality such as a brighter image.

As the “high dielectric constant material” in the present invention, in addition to silicon nitride described later, TaOx (tantalum oxide), BST (strontium barium titanate), PZT (zirconate titanate), TiO ₂ (titanium oxide) ), ZiO ₂ (zirconium oxide), HfO ₂ (hafnium oxide), and an insulating material containing at least one of SiON (silicon oxynitride) and SiN (silicon nitride). In particular, it increases TaOx, BST, _PZT, if using a high dielectric constant material such as TiO 2, ZiO ₂ and HfO _2, the capacitance value on a limited substrate region. Alternatively, when a material containing silicon such as SiO ₂ (silicon oxide), SiON (silicon oxynitride), and SiN is used, generation of stress in an interlayer insulating film or the like can be reduced.

  In one embodiment of the electro-optical device of the present invention, the electro-optical device includes a light-shielding relay film formed of the same film as the upper light-shielding film and electrically connecting the thin film transistor and the pixel electrode. The pixel aperture region is defined by the relay film.

According to this aspect, it is possible to suitably define the opening area. In addition, since the light-shielding relay layer for electrically connecting the thin film transistor and the pixel electrode is formed in the same manner as the light-shielding film, the electrical connection between the two can be performed more favorably. For example, it is conceivable that the relay layer and the light shielding film are made of a material compatible with ITO or the like forming the pixel electrode.
In one aspect of the electro-optical device according to the aspect of the invention, the upper light-shielding film may be connected to one electrode forming the storage capacitor. According to this aspect, a more flexible laminated structure can be constructed. For example, when it is desired to set the “one electrode of the storage capacitor” in this embodiment to a fixed potential, it is possible to maintain the electrode at a fixed potential by taking measures such as connecting the light-shielding film to a fixed potential power supply. It becomes possible.

  In the present invention, the pixel electrode may be electrically connected to another layer in the stacked structure via titanium or a compound thereof.

  According to this configuration, the pixel electrode and another layer in the laminated structure connected to the pixel electrode (for example, at least one of a pair of electrodes forming a storage capacitor, a relay layer described later, and the like can be assumed). Good electrical connection with the device. This is because the pixel electrode is usually made of a transparent conductive material such as ITO (Indium Tin Oxide) and IZO (Indium Zinc Oxide), and if this is brought into contact with aluminum or the like, so-called electrolytic corrosion will occur. As a result, a favorable electrical connection cannot be realized due to disconnection of aluminum or insulation due to formation of alumina. However, in this embodiment, since the pixel electrode is connected to the other layer via titanium or a compound thereof, the above-described problem does not occur.

  In this aspect, the interlayer insulating film disposed as a base of the pixel electrode further forms a part of the laminated structure, and the interlayer insulating film has a contact for electrical connection with the pixel electrode. Preferably, a hole is formed, and a film containing the titanium or a compound thereof is formed on at least the inner surface of the contact hole.

  According to such a configuration, first, electrical connection between the pixel electrode and other layers can be achieved without concern about the above-described electrolytic corrosion. At the same time, in the present configuration, since a contact hole is interposed between the pixel electrode and the other layers, it is possible to achieve more appropriate arrangement between the two in the laminated structure, or to improve the degree of freedom in layout. it can. In addition, at the same time, the proper arrangement of the various components in the laminated structure, more specifically, the arrangement that confine the various components in the light-shielding region, and the light transmission region is widened, better achieve the above-mentioned goal. Since it also means that it can be realized, it greatly contributes to the realization and maintenance of a high aperture ratio which is the object of the present invention.

  Furthermore, in the present configuration, at least on the inner surface of the contact hole, a film containing the titanium or the compound thereof, that is, a film having relatively excellent light-shielding performance is formed. Light leakage or the like can be prevented beforehand. That is, the film absorbs light or the like, so that the light that penetrates through the cavity of the contact hole can be blocked. Thereby, there is almost no possibility that light leakage or the like may occur on the image. Further, for the same reason, the light resistance of the thin film transistor or its semiconductor layer can be improved. This makes it possible to suppress the occurrence of light leakage current when light enters the semiconductor layer, and to prevent the occurrence of flicker or the like in an image due to the light leakage current. As described above, according to the present configuration, it is possible to display a higher quality image.

  In another aspect of the electro-optical device of the present invention, the data line is formed as the same film as one of the pair of electrodes constituting the storage capacitor.

  According to this aspect, the data line and one of the pair of electrodes forming the storage capacitor are formed as the same film, in other words, in the same layer or simultaneously in the manufacturing process. Thus, for example, it is not necessary to form both in separate layers and to separate them with an interlayer insulating film, and it is possible to prevent the stacked structure from having a higher layer. In this regard, the present invention is very advantageous in view of the fact that the above-mentioned shield layer is formed between the data line and the pixel electrode in the laminated structure, and the height is expected to be increased accordingly. The reason is that an excessively multi-layered structure impairs manufacturability and a manufacturing yield rate. Even if one of the data line and the pair of electrodes is formed at the same time as in the present embodiment, insulation can be achieved between the two by performing an appropriate patterning process on the film. There is no particular problem in this regard.

  As will be apparent from the description of the present embodiment, in the present invention, it is not always necessary to form the data line and at least one of the pair of electrodes constituting the storage capacitor as the same film. That is, both may be formed as separate layers.

  In another aspect of the electro-optical device of the present invention, a relay layer for electrically connecting at least one of the pair of electrodes constituting the storage capacitor and the pixel electrode is further provided as a part of the laminated structure.

  According to this aspect, the pixel electrode and one of the pair of electrodes of the storage capacitor, which respectively constitute a part of the laminated structure, are electrically connected by the relay layer which also constitutes a part of the laminated structure. become. Specifically, the contact hole may be formed. Thus, for example, the relay layer according to this embodiment has a two-layer structure, and the upper layer is made of a material compatible with ITO (Indium Tin Oxide), which is an example of a transparent conductive material generally used as a material for a pixel electrode. The lower layer can adopt a flexible structure such as a material compatible with one of the pair of electrodes constituting the storage capacitor, and can apply a voltage to the pixel electrode or a potential of the pixel electrode. Holding can be realized more suitably.

  Providing such a “relay layer” is preferable for optimizing the arrangement of the pixel electrodes and the storage capacitors. That is, according to the present embodiment, the arrangement of the relay layer and the storage capacitor can be devised so as to expand the light transmission region as much as possible, so that a higher aperture ratio can be achieved.

  In another aspect of the electro-optical device according to the invention, the relay layer includes an aluminum film and a nitride film.

  According to this aspect, for example, when the pixel electrode is made of ITO and this is brought into direct contact with aluminum, electrolytic corrosion occurs between the two, and disconnection of aluminum or insulation due to the formation of alumina or the like occurs. In view of the fact that it is not preferable, in this aspect, the pixel electrode and the relay layer are not brought into direct contact with the aluminum, but by bringing the ITO into contact with a nitride film, for example, a titanium nitride film. As a result, electrical connection with the storage capacitor can be realized. As described above, the present configuration provides an example of the above-mentioned “material having good compatibility”.

  In addition, since the silicon nitride film has an excellent effect of blocking the intrusion or diffusion of moisture, it is possible to prevent moisture from entering the semiconductor layer of the thin film transistor. In the present aspect, the above-described operation can be obtained by including the nitride film in the relay layer, thereby making it possible to prevent the occurrence of a problem that the threshold voltage of the thin film transistor increases as much as possible.

  In the aspect including the relay layer as described above, the light-shielding layer may be configured to be formed as the same film as the relay layer.

  According to such a configuration, since the relay layer and the shield layer are formed as the same film, it is possible to simultaneously form both configurations, thereby simplifying the manufacturing process or reducing the manufacturing cost. Cost reduction can be achieved.

  Further, in an embodiment having both the configuration according to this embodiment and the above-described embodiment in which one of the pair of electrodes forming the data line and the storage capacitor is formed as the same film, the data line, the storage capacitor, the relay layer, and the pixel electrode The arrangement mode, in particular, the stacking order and the like become suitable, and the above-described functions and effects can be more effectively enjoyed.

  More particularly, according to the aspect in which the configuration according to this aspect and the above-described relay layer include the configuration including a nitride film, the light-shielding layer also includes the nitride film. Therefore, the above-described action of infiltrating moisture into the semiconductor layer of the thin film transistor can be obtained more widely on the surface of the substrate. Therefore, the effect of long-term operation of the thin film transistor can be more effectively enjoyed.

  As will be apparent from the description of the present embodiment, in the present invention, it is not always necessary to form the light-shielding layer and the relay layer as the same film. That is, both may be formed as separate layers.

  In another aspect of the electro-optical device of the present invention, at least one of the scanning line, the data line, and a pair of electrodes forming the storage capacitor is made of a light-shielding material, and the at least one of the stacked In the structure, a built-in light shielding film is formed.

  According to this aspect, various elements constituting the laminated structure on the substrate are made of a light-shielding material, and form a light-shielding film that defines a light-transmitting region. As a result, a so-called “built-in light-shielding film” is provided on the substrate, and light incident on the semiconductor layer of the thin film transistor causes a light leak current to generate a flicker on an image. It is possible to avoid it beforehand. That is, light resistance to the thin film transistor or its semiconductor layer can be improved. By the way, if the thin film transistor is formed in the lowermost layer on the substrate or a layer close to the lowermost layer, the scanning line, the data line, and the storage capacitor are all formed on the upper side of the thin film transistor. Such a light-shielding film can be referred to as an “upper light-shielding film”.

  Note that the “light-shielding material” in the present embodiment refers to at least one of refractory metals such as Ti (titanium), Cr (chromium), W (tungsten), Ta (tantalum), and Mo (molybdenum). It comprises a metal simple substance, an alloy, a metal silicide, a polysilicide, and a laminate of these. The “light-shielding material” may also include aluminum (Al).

  Further, in this embodiment, in particular, all of the above-described various elements may constitute the “built-in light-shielding film”, but preferably, at least one of the two elements extending in the direction intersecting with each other is preferable. The set may constitute the “built-in light shielding film”. For example, in a case where a capacitor line is formed along a second direction in which the scanning line extends, and a part of the capacitor line is one of a pair of electrodes forming the storage capacitor, It is preferable that the capacitance line and the data line are made of a light-shielding material, and these constitute a “built-in light-shielding film”. According to such a configuration, the shape of the “built-in light-shielding film” has a lattice shape, and it is possible to suitably correspond to the matrix arrangement which is usually adopted as the arrangement mode of the pixel electrodes.

  In another aspect of the electro-optical device of the present invention, one of the pair of electrodes forming the storage capacitor forms a part of a capacitance line formed along the second direction, and the capacitance line is And a multilayer film including a low resistance film.

  According to this aspect, first, one of the pair of electrodes constituting the storage capacitor (hereinafter, sometimes referred to as “one electrode” for simplicity) is arranged so as to be along the second direction, that is, the direction in which the scanning lines are formed. It constitutes a part of the formed capacitance line. Thus, for example, in order to set the one electrode to a fixed potential, it is necessary to separately provide a conductive material or the like for setting the fixed potential to each of the one electrodes of the storage capacitor that can be provided for each pixel. There is no such a case, and it is only necessary to adopt a mode in which each capacitor line is connected to a fixed potential source. Therefore, according to this aspect, the manufacturing process can be simplified, the manufacturing cost can be reduced, and the like.

  Further, in this embodiment, particularly, the capacitance line is formed of a multilayer film including a low resistance film. According to such a configuration, the function of the capacitor line can be enhanced (for example, in addition to the function as the fixed potential side capacitor electrode of the capacitor line, other functions can be realized). . In particular, the multilayer film according to the present invention includes a low-resistance film, that is, a material having a lower electric resistance than conventional polysilicon or WSi, such as a simple metal such as aluminum, copper, and chromium, or a material containing these metals. , It is possible to achieve high electrical conductivity. And, by achieving this high electrical conductivity, in this embodiment, the narrowing of the capacitance line, that is, the narrowing of the storage capacitance can be realized without any special restriction. Therefore, this embodiment greatly contributes to improving the aperture ratio. In other words, it is possible to prevent the occurrence of crosstalk or burn-in due to the increase in resistance, which has conventionally occurred when the capacitance line is narrowed.

  In addition, since the capacitance line in this embodiment is formed of a multilayer film including the above-described low-resistance film, in addition to the low-resistance film, a film made of another material for realizing a light shielding function capable of preventing light from entering the thin film transistor. Can be additionally provided as a component of the capacitance line.

  Further, when the capacitance line is formed of a multilayer film as in the present invention, the function as a storage capacitor can be stabilized. That is, for example, if only the purpose of reducing the resistance as exemplified above is to be achieved, the capacitance line may be constituted by only one such material. May not be fully fulfilled. However, according to the present invention, as described above, since the capacitance line is composed of two or more layers, even if a material having some special function is used in one layer, the capacitance line is accumulated in another layer. Since the material that should function as a capacitor can be used in a compensated manner, the above-described problem does not occur.

  In the present invention, since the above-described multi-functionality can be achieved in the capacitance line, the degree of freedom in designing the electro-optical device is also improved.

  In another aspect of the electro-optical device according to the present invention, the capacitance line has the low-resistance film in an upper layer and a film made of a light-absorbing material in a lower layer.

  According to this aspect, multi-functionalization as described below is achieved in the capacitance line. First, since the upper layer of the capacitance line has the low resistance film, for example, assuming that light is incident from the upper layer side, the light is reflected on the surface of the low resistance film. It is possible to prevent this from directly going to the thin film transistor. This is based on the fact that the material generally has a high light reflectance.

  On the other hand, since the lower layer of the capacitance line is made of a light-absorbing material such as polysilicon, for example, after being incident inside the electro-optical device, it is reflected on the surface of the low-resistance film or the lower surface of the data line. Thus, it is possible to prevent so-called stray light generated as a result of trying to reach the thin film transistor. That is, all or a part of such stray light is absorbed in the lower layer of the capacitor line, so that the possibility that the stray light reaches the thin film transistor can be reduced.

  Note that, in the present invention, it is assumed that the capacitance line is “composed of a multilayer film”. For example, in this embodiment, even if aluminum exists in the upper layer of the capacitance line and polysilicon exists in the lower layer, Further, a film made of another material exists in an upper layer, or a film made of another material exists further below the polysilicon, or a film made of another material exists between the aluminum and the polysilicon. Needless to say, the form may exist. In some cases, the structure may be aluminum, polysilicon, aluminum, or the like in order from the top.

  In another aspect of the electro-optical device according to the present invention, the low-resistance film is made of aluminum or an aluminum alloy.

  According to this aspect, since the aluminum is a very low-resistance material, the above-described effects can be more reliably achieved. Incidentally, the resistance value of aluminum is approximately 1/100 as compared with the above-described polysilicon and WSi.

  Further, according to the present configuration in which the capacitance line contains aluminum or an aluminum alloy, the following operation and effect can be obtained. In the related art, since the capacitance line is formed of polysilicon alone, WSi, or the like as described above, an interlayer insulating film or the like formed on the capacitance line is formed by a contraction force or a compression force caused by these materials. Although a large stress was generated, such a problem does not occur in the present embodiment. That is, in the related art, the thickness of the interlayer insulating film is limited by the presence of the stress, and if the thickness is too small, the interlayer insulating film may be damaged by the stress. In the present aspect, it is not necessary to consider the presence of such stress, and as a result, the thickness of the interlayer insulating film can be reduced as compared with the related art, and therefore, the overall size of the electro-optical device can be reduced. .

  In another aspect of the electro-optical device of the present invention, the storage capacitor includes the dielectric film and an upper electrode and a lower electrode sandwiching the dielectric film, and extends along a plane parallel to a surface of the substrate. By including the stacked first portion and the second portion stacked along a plane rising with respect to the surface of the substrate, the cross-sectional shape includes a convex shape.

  According to this aspect, for example, whether the lower electrode itself is formed so as to include a convex portion with respect to the substrate, or whether a convex member is formed at a predetermined position below the lower electrode, or the like. Accordingly, the dielectric film and the upper electrode located thereover have a bent shape when viewed in cross section. In this case, as compared with the conventional planar storage capacitor, only the area of the second portion in which the upper electrode, the dielectric film, and the lower electrode are stacked along the plane rising along the surface of the substrate. In other words, the effect of increasing the capacity can be expected only in the area of the convex side wall.

  Therefore, in the present invention, the capacitance can be increased without planarly increasing the area of the upper electrode and the lower electrode constituting the storage capacitor. This makes it possible to display a high-quality image without display unevenness or flicker.

In the present invention, the convex shape may be a tapered shape.
According to this aspect, the dielectric film and the upper electrode formed on the lower electrode can be suitably formed. That is, according to the convex shape including the tapered shape, for example, as is clear from the comparison with the convex shape including the vertical side wall portion, the corners of the convex shape are smooth, so that the tapered shape is reduced. When the dielectric film and the upper electrode are formed on the convex shape including the convex shape, there is almost no need to worry about deterioration of the coverage. Therefore, according to this aspect, it is possible to preferably form the dielectric film and the upper electrode.

  Further, when comparing the convex shape including the vertical side wall portion and the convex shape including the tapered shape according to the present embodiment, the height of both is the same, and the area of the upper surface of the convex shape is the same between both. In general, it can be said that the latter is preferable from the viewpoint of increasing the storage capacity because the latter can provide a larger area of the side wall part than the former.

  In another aspect of the electro-optical device of the present invention, the convex shape of the storage capacitor is formed along at least one of the scanning line and the data line.

  According to this aspect, when an interlayer insulating film or the like is laminated on the convex shape, a convex portion is formed on the convex shape, so that the convex portion is formed along at least one of the scanning line and the data line. The form in which the convex portion extends will appear. Therefore, in this case, a form in which the convex portion exists between adjacent pixel electrodes appears. Thus, when the electro-optical device according to the present embodiment is driven by the 1H inversion driving method, the 1S inversion driving method, or the dot inversion driving method, an adverse effect on an image due to a horizontal electric field generated between adjacent pixel electrodes is prevented. This makes it possible to reduce the number of images and display a higher quality image. Hereinafter, the circumstances will be described in detail.

  First, the 1H inversion driving method means that, for example, assuming pixel electrodes arranged in a square shape, in a certain frame or field, the pixel electrodes arranged in odd rows are set with reference to the potential of the common electrode. In addition to driving with the positive potential, the pixel electrodes arranged in even rows are driven with the negative potential, and in the next frame or field following this, odd-numbered rows have the negative polarity, contrary to the previous one. The even-numbered row is a driving method in which a state of driving with a positive polarity is continuously performed. On the other hand, the 1S inversion driving method is a driving method in which, in the description of the 1H inversion driving method described above, odd rows are replaced with “odd columns” and even rows are replaced with “even columns”. Further, the dot inversion driving method is a driving method in which the voltage polarity applied to each pixel electrode is inverted between pixel electrodes adjacent to each other in both the column direction and the row direction. By employing these driving methods, it is possible to suppress the deterioration of the electro-optical material such as the liquid crystal due to the application of the DC voltage component, or the occurrence of crosstalk and flicker on the image.

  However, in such an inversion driving method, pixel electrodes to which voltages of different polarities are applied are adjacent to each other, so that a so-called “lateral electric field” is generated. For example, in the 1H inversion driving method, a horizontal electric field is generated between a pixel electrode located in a certain row and a pixel electrode located in a row adjacent thereto. When such a lateral electric field is generated, the potential difference between the pixel electrode on the substrate and the common electrode on the opposite substrate (hereinafter, referred to as “vertical electric field”) is disturbed to cause poor alignment of the liquid crystal. Light leakage or the like occurs, resulting in deterioration of image quality such as reduction of contrast ratio.

  However, in this aspect, as described above, since the convex shape of the storage capacitor is formed along at least one of the scanning line and the data line, it is possible to suppress the generation of the horizontal electric field. It is.

  First, if the edge of the pixel electrode is formed so as to ride on the edge of the projection, the distance between the pixel electrode and the common electrode can be reduced, so that the vertical electric field is strengthened as compared with before. It is possible. Secondly, the horizontal electric field itself can be weakened depending on the dielectric constant of the projection regardless of whether or not the edge of the pixel electrode exists on the projection. Third, since the volume of the gap between the protrusion and the common electrode, that is, the volume of the liquid crystal located in the gap can be reduced, the influence of the transverse electric field on the liquid crystal is relatively reduced. It is possible.

  Incidentally, in the case of the 1H inversion driving method, it is preferable that the convex shape or the convex portion is formed along the scanning line, and in the case of the 1S inversion driving method, it is preferable to form it along the data line. Needless to say. Further, in the dot inversion driving method, it is preferable that the convex shape or the convex portion is formed along both the scanning line and the data line.

  As described above, according to this embodiment, it is possible to suitably realize the application of the vertical electric field to the liquid crystal, and it is possible to display an intended image.

  In another aspect of the electro-optical device of the present invention, the storage capacitor includes the dielectric film and an upper electrode and a lower electrode sandwiching the dielectric film, and the dielectric film includes a silicon nitride film and an oxide film. It is made of a silicon film.

According to this aspect, the dielectric film includes the silicon nitride film having a relatively high dielectric constant, and the area of the storage capacitor, that is, the area of the pair of electrodes constituting the storage capacitor is somewhat sacrificed. However, high charge storage characteristics can be enjoyed.
Thereby, the potential holding characteristic of the pixel electrode is remarkably improved, and a higher quality image can be displayed. In addition, since the area of the storage capacitor can be reduced, the pixel aperture ratio can be further improved.

  In addition, since the silicon nitride film has an excellent effect of blocking the intrusion or diffusion of moisture, it is possible to prevent moisture from entering the semiconductor layer included in the thin film transistor. In this regard, if moisture enters the semiconductor layer, the gate insulating film, or the like, a positive charge is generated at the interface between the semiconductor layer and the gate insulating film, which has a negative effect of gradually increasing the threshold voltage. In this embodiment, as described above, it is possible to effectively prevent moisture from penetrating into the semiconductor layer. Therefore, it is possible to prevent the occurrence of a problem that the threshold voltage of the thin film transistor increases as much as possible.

  Further, since the dielectric film contains a silicon oxide film in addition to the silicon nitride film, the dielectric film does not lower the breakdown voltage of the storage capacitor.

  As described above, according to the dielectric film of the present embodiment, it is possible to simultaneously enjoy a composite effect.

  In addition, in a mode in which the configuration of the dielectric film according to the present mode is added to the storage capacitor including the above-described convex shape, a significant capacity increasing effect can be expected. Therefore, such a configuration can be said to be one of the modes most suitable for the purpose of the present invention, that is, realizing and maintaining a high aperture ratio.

  Note that this embodiment includes a case where the dielectric film has a two-layer structure of a silicon oxide film and a silicon nitride film, and in some cases, such as a silicon oxide film, a silicon nitride film, and a silicon oxide film. This includes the case where a simple three-layer structure is obtained or the case where a three-layer structure is obtained.

  In another aspect of the electro-optical device of the present invention, an interlayer insulating film disposed as a base of the pixel electrode further forms a part of the laminated structure, and a surface of the interlayer insulating film is subjected to a planarization process. Have been.

  According to this aspect, since the surface of the interlayer insulating film disposed as the base of the pixel electrode is flattened, the alignment film that is usually formed on the interlayer insulating film is also flattened. It can be formed as having a smooth surface. That is, the uneven shape on the surface of the interlayer insulating film is not transferred to the surface of the alignment film. Therefore, the alignment state of the liquid crystal, which is an example of the electro-optical material that comes into contact with the alignment film, does not cause unnecessary disorder, and the possibility of causing light leakage or the like due to this is reduced. Therefore, a higher quality image can be displayed.

  Note that, specifically, for example, the CMP (Chemical Mechanical Polishing) process or the etch-back process corresponds to the “planarization process” in the present embodiment, but other various planarization technologies may be used. Of course.

  Here, the CMP treatment generally refers to a polishing liquid containing silica particles and the like at the corresponding contact portions while rotating both the substrate to be processed and the polishing cloth (pad) while bringing the respective surfaces into contact with each other. This is a technique for polishing the surface of the substrate to be processed by supplying the slurry (slurry) to balance the mechanical action and the chemical action, thereby flattening the surface.

  In general, an etch-back process is a process in which a film having flatness such as a photoresist or an SOG (Spin On Glass) film is formed as a sacrificial film on a surface having irregularities, and the etching process for the sacrificial film is performed by the above-described process. This is a technique for flattening the surface by performing the process up to the surface having the unevenness (the unevenness is thus "equalized"). However, in the present invention, the above-mentioned sacrificial film is not always necessary. For example, more than filling the space inside the contact hole (that is, so as to overflow from the contact hole), an excess film of the filler is formed up to the surface of the interlayer insulating film. By completely etching the excess portion, a process in which the filler is left only inside the contact hole and a flat surface is exposed may be performed.

  As described above, in the configuration in which the surface of the interlayer insulating film is flattened, driving with different polarities for each scanning line or a row of pixel electrodes connected to the scanning line (that is, “1H inversion driving”) (See below), a horizontal electric field may be generated between adjacent pixel electrodes, and the alignment state of the liquid crystal may be disturbed. In this regard, as described later, a means for suppressing the generation of the lateral electric field by providing a convex portion on the surface of the interlayer insulating film or the like is preferably employed, but other means such as the following are also used. It can be preferably adopted.

  That is, the polarity inversion is performed not for each scanning line but for each field period (one vertical scanning period), that is, “1V inversion driving” is performed. According to this, during a certain field period, adjacent pixel electrodes are not driven with different polarities, so that a horizontal electric field cannot be generated in principle.

  However, adopting this 1V inversion drive causes the following problem. That is, each time the polarity is inverted, that is, every vertical scanning period, there is a problem that flicker is generated on the image.

  Therefore, in such a case, it is preferable to perform double-speed field inversion drive as described in detail in the embodiment below. Here, the double-speed field inversion drive means that one field period is half (for example, if the conventional one is driven at 120 [Hz]), "half" is preferably 1/60 [ s] or less.) Therefore, assuming 1V inversion driving, the period of polarity inversion is halved compared to before. By doing so, one vertical scanning period is shortened, that is, the screen with the positive polarity and the screen with the negative polarity are switched more quickly, and the above-mentioned flicker becomes less noticeable.

  As described above, according to the double-speed field inversion driving method, it is possible to display a higher quality image without flicker.

  In another aspect of the electro-optical device of the present invention, a plurality of the pixel electrodes are arranged in a plane, and a first pixel electrode group and a first cycle for inversion driving at a first cycle are provided. And a second pixel electrode group for inversion driving at a second period complementary to the main line, wherein at least one of the data line and the shield layer extends above the scanning line and intersects the scanning line. And a protruding portion protruding from the main line portion along the scanning line, comprising a counter electrode facing the plurality of pixel electrodes on a counter substrate disposed to face the substrate, wherein the pixel electrode on the substrate is provided. A projection is formed on the surface of the base under a region corresponding to a gap between pixel electrodes adjacent to each other across the scanning line when viewed in a plan view in accordance with the presence of the overhang.

  According to this aspect, the first pixel electrode group for inversion driving in the first cycle and the second pixel electrode group for inversion driving in the second cycle complementary to the first cycle are provided. Are arranged in a plane on the first substrate, and (i) adjacent pixel electrodes driven by driving voltages having mutually opposite polarities at each time at the time of inversion driving and (ii) at the time of inversion driving At each time, there are both adjacent pixel electrodes that are driven by drive voltages of the same polarity. These two types exist, for example, in an electro-optical device such as a matrix drive type liquid crystal device employing an inversion drive system such as the above-described 1H inversion drive system. Therefore, a horizontal electric field is generated between adjacent pixel electrodes belonging to different pixel electrode groups (that is, adjacent pixel electrodes to which potentials of opposite polarities are applied).

  Here, in the present invention, in particular, at least one of the data line and the shield layer includes an overhanging portion extending along the scanning line from a main line extending above the scanning line and intersecting the scanning line. Then, on the base surface of the pixel electrode, a projection is formed in a region serving as a gap between pixel electrodes adjacent to each other across a scanning line in plan view according to the presence of the overhang. In other words, the underlying surface of the pixel electrode is a surface on which convex portions having a predetermined height and a predetermined shape are positively formed.

  As a result, first, if the edge portion of each pixel electrode is formed so as to be located on this convex portion, a vertical electric field generated between each pixel electrode and the counter electrode is generated by the adjacent pixel electrode (in particular, This is relatively strengthened as compared with a horizontal electric field generated between pixel electrodes belonging to different pixel electrode groups. That is, since the electric field generally becomes stronger as the distance between the electrodes becomes shorter, the edge of the pixel electrode approaches the counter electrode by the height of the convex portion, and the vertical electric field generated between them becomes stronger. Second, regardless of whether or not the edge of each pixel electrode is located on this convex portion, a horizontal electric field generated between adjacent pixel electrodes (particularly, pixel electrodes belonging to different pixel electrode groups) is convex. The presence of the portion reduces the volume of the electro-optical material through which the transverse electric field passes, while reducing the volume of the electro-optical material through which the transverse electric field passes, and also reduces the volume of the transverse electric field with respect to the electro-optical material. The effect can be reduced. Therefore, it is possible to reduce the operation failure of the electro-optical material such as the alignment failure of the liquid crystal due to the lateral electric field associated with the inversion driving method. At this time, as described above, the edge of the pixel electrode may or may not be located on the protrusion, and may be located in the middle of the inclined or substantially vertical side surface of the protrusion. Is also good.

  In addition, the height and shape of the projections can be controlled much more accurately than the technology of adjusting the height of the edge of the pixel electrode by utilizing the existence of other wirings and elements located below the data line. is there. In the prior art, since a slight pattern shift in each of a large number of films is combined, it is basically difficult to make the height and shape of the unevenness in the finally formed uppermost layer as designed. For this reason, the operation failure of the electro-optical material such as the alignment failure of the liquid crystal due to the lateral electric field can be reliably reduced, and the reliability of the device can be improved.

  In addition, a light-shielding film for concealing a malfunctioning portion of the electro-optical material can be made smaller, so that the aperture ratio of each pixel can be increased without causing an image defect such as light leakage.

  As a result, it is possible to reliably reduce the operation failure due to the lateral electric field in the electro-optical material such as the liquid crystal by forming the convex portion corresponding to the protruding portion of the data line, and to provide a high contrast, bright and high quality image display liquid crystal. An electro-optical device such as a device can be manufactured relatively easily.

  The present invention is applicable to various types of electro-optical devices in addition to the transmission type and the reflection type.

  In another aspect of the electro-optical device of the present invention, a plurality of the pixel electrodes are arranged in a plane, and a first pixel electrode group and a first cycle for inversion driving at a first cycle are provided. And a second pixel electrode group for inverting driving at a second period complementary to the first and second pixel electrodes, and a counter electrode facing the plurality of pixel electrodes on a counter substrate disposed to face the substrate. And a projection formed in a region serving as a gap between pixel electrodes adjacent to each other, wherein the projection removes a planarization film once formed on the projection by etching, and after the removal. The convex portion has a gentle surface step formed by retreating the exposed surface of the convex portion.

  According to this aspect, a horizontal electric field is generated between adjacent pixel electrodes belonging to different pixel electrode groups, that is, between adjacent pixel electrodes to which potentials of opposite polarities are applied. Since the convex portion is positively formed by etching at the edge portion of the pixel electrode located at or adjacent to the pixel electrode, first, the edge portion of each pixel electrode is formed so as to be located on the convex portion. For example, the vertical electric field generated between each pixel electrode and the counter electrode is relatively increased as compared with the horizontal electric field generated between adjacent pixel electrodes. Second, regardless of whether or not the edge of each pixel electrode is located on this projection, the transverse electric field generated between adjacent pixel electrodes depends on the dielectric constant of the projection due to the presence of the projection. The effect of the lateral electric field on the electro-optical material can be reduced by reducing the volume of the electro-optical material through which the lateral electric field passes while being weakened. Therefore, it is possible to reduce the operation failure of the electro-optical material such as the alignment failure of the liquid crystal due to the lateral electric field associated with the inversion driving method. At this time, as described above, the edge of the pixel electrode may or may not be located on the protrusion, and may be located in the middle of the inclined or substantially vertical side surface of the protrusion. Is also good.

  In addition, a light-shielding film for concealing a malfunctioning portion of the electro-optical material can be made smaller, so that the aperture ratio of each pixel can be increased without causing an image defect such as light leakage.

  In particular, in the present invention, since a convex portion having a gentle step is formed, it is possible to effectively prevent the occurrence of an operation failure of the electro-optical device such as a liquid crystal alignment defect due to the step near the convex portion. It can be prevented before it happens. In particular, when a rubbing treatment is performed on an alignment film formed on a pixel electrode, if the steps of the projections are gentle, the rubbing can be performed relatively easily and can be performed satisfactorily without unevenness. Such an operation failure of the electro-optical material can be extremely effectively prevented.

  As a result, the operation failure due to the lateral electric field in the electro-optical material such as the liquid crystal can be reliably reduced by forming the convex portion, and the formation of the convex portion causes the operation failure due to the step in the electro-optical material such as the liquid crystal. This can be suppressed by a gradual step, and an electro-optical device such as a liquid crystal device that performs high-contrast, bright, high-quality image display can be realized.

  In another aspect of the electro-optical device of the present invention, a plurality of the pixel electrodes are arranged in a plane, and a first pixel electrode group and a first cycle for inversion driving at a first cycle are provided. And a second pixel electrode group for inverting driving at a second period complementary to the first and second pixel electrodes, and a counter electrode facing the plurality of pixel electrodes on a counter substrate disposed to face the substrate. And a convex pattern formed under the pixel electrode and as the same layer as at least one of the data line and the shield layer in order to form a convex portion in a region serving as a gap between adjacent pixel electrodes.

  According to this aspect, by forming the convex pattern formed below the pixel electrode and as the same layer as at least one of the data line and the shield layer, the above-described convex portion is formed. Here, the “convex pattern” can be formed so as to have a shape that is not continuous in a plane with at least one of the data line and the shield layer, and in that case, in comparison with the “overhang”, It can be said that there is a characteristic in that point. And in such a form, especially when the convex pattern is not formed as the same layer as the data line, the convex pattern is not electrically connected to the data line, and the potential of both is not changed. Generally, the parasitic capacitance is different, so that the parasitic capacitance between the convex pattern and the scanning line can be reduced.

  In the aspect in which the convex portion is formed, particularly, in a region serving as a gap between pixel electrodes that are adjacent to each other in plan view, the height is caused by the height of at least one of the data line, the shield layer, the overhang portion, and the convex pattern. And a light-shielding film extending along the first direction or the second direction and wider than the at least one line width.

  According to such a configuration, a light-shielding film wider than at least one line width of the data line, the shield layer, the overhang portion, and the convex pattern is provided. Even if light leakage or the like should occur due to poor alignment caused by the convex portions formed by the projections, the light-shielding film blocks the progress thereof, thereby reducing the possibility of adversely affecting the image. .

Now, in the present invention, it is possible to take various aspects as described above, but in the various aspects of the present invention described above, regardless of the form of citation of each claim described in the claims, It is basically possible to freely combine one embodiment with another. However, due to the nature of the matter, there may be conflicts. For example, with respect to a mode in which a film made of titanium or the like is formed on the inner surface of a contact hole for achieving electrical connection with a pixel electrode, the surface of an interlayer insulating film in which the contact hole is formed is formed. And combinations of the above-described modes for performing the flattening process. Of course, it is also possible to configure an electro-optical device having three or more aspects.
In addition, the electro-optical device according to the present invention may further include, on a substrate, a data line extending in a first direction, a scanning line extending in a second direction intersecting the data line, and the data line and the scanning line. An electro-optical device in which a pixel electrode and a thin film transistor arranged so as to correspond to an intersection region are provided as a part of a laminated structure, and further on the substrate, a layer above a semiconductor layer of the thin film transistor and A storage capacitor formed below the pixel electrode and electrically connected to a pixel potential; a shield layer disposed between the data line and the pixel electrode; and a lower layer formed below the semiconductor layer of the thin film transistor. A light-shielding film, which is provided as a part of the laminated structure, wherein the lower light-shielding film defines at least a corner of a pixel opening region, and includes the scan line, the data line, and the storage layer. The amount and the shield layer may be formed in the light shielding region.

  Further, as an aspect of the present invention, the shield layer may have a light shielding property.

  According to another embodiment of the invention, there is provided an electronic apparatus including the above-described electro-optical device. However, the various aspects are included.

  According to the electronic apparatus of the present invention, since the electronic apparatus includes the above-described electro-optical device of the present invention, it is possible to display a higher quality image by achieving a high aperture ratio and a high contrast. Various electronic devices such as a projection display device, a liquid crystal television, a mobile phone, an electronic organizer, a word processor, a viewfinder type or a monitor direct-view type video tape recorder, a workstation, a videophone, a POS terminal, and a touch panel can be realized.

  The operation and other advantages of the present invention will become more apparent from the embodiments explained below.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, the electro-optical device of the present invention is applied to a liquid crystal device.

(1st Embodiment)
First, the configuration of the pixel portion of the electro-optical device according to the first embodiment of the present invention will be described with reference to FIGS. Here, FIG. 1 is an equivalent circuit of various elements, wiring, and the like in a plurality of pixels formed in a matrix forming an image display area of the electro-optical device. FIG. 2 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed. FIG. 3 is a plan view mainly showing only main components of FIG. 2, specifically, only the data lines, the shield layer, and the pixel electrodes in order to show the positional relationship between the pixel electrodes. FIG. 4 is a sectional view taken along line AA ′ of FIG. In FIG. 4, the scale of each layer / member is made different so that each layer / member has a size recognizable in the drawing.

  In FIG. 1, a plurality of pixels formed in a matrix forming an image display area of the electro-optical device according to the present embodiment are each formed with a pixel electrode 9a and a TFT 30 for controlling switching of the pixel electrode 9a. The data line 6a to which the image signal is supplied is electrically connected to the source of the TFT 30. The image signals S1, S2,..., Sn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied to a plurality of adjacent data lines 6a for each group. Good.

  Also, the scanning line 3a is electrically connected to the gate of the TFT 30, and the scanning signals G1, G2,..., Gm are applied to the scanning line 3a in a pulsed manner in this order at a predetermined timing. It is configured. The pixel electrode 9a is electrically connected to the drain of the TFT 30, and by closing the switch of the TFT 30 as a switching element for a certain period, the image signals S1, S2,... Write at a predetermined timing.

  The image signals S1, S2,..., Sn of a predetermined level written in the liquid crystal as an example of the electro-optical material via the pixel electrodes 9a are held for a certain period between the pixel electrodes 9a and the counter electrode formed on the counter substrate. The liquid crystal modulates light by changing the orientation and order of the molecular assembly according to the applied voltage level, thereby enabling gray scale display. In the normally white mode, the transmittance for the incident light decreases according to the voltage applied in each pixel unit, and in the normally black mode, the light enters according to the voltage applied in each pixel unit Light transmittance is increased, and light having a contrast corresponding to an image signal is emitted from the electro-optical device as a whole.

  In order to prevent the held image signal from leaking, a storage capacitor 70 is added in parallel with a liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode. The storage capacitor 70 is provided side by side with the scanning line 3a, includes a fixed potential side capacitor electrode, and includes a capacitor electrode 300 fixed to a constant potential.

  Hereinafter, an actual configuration of the electro-optical device that realizes the above-described circuit operation using the data line 6a, the scanning line 3a, the TFT 30, and the like will be described with reference to FIGS.

  First, in FIG. 2, a plurality of pixel electrodes 9a are provided in a matrix on the TFT array substrate 10 (the outline is indicated by a dotted line portion 9a '), and each of the pixel electrodes 9a extends along the vertical and horizontal boundaries of the pixel electrode 9a. A data line 6a and a scanning line 3a are provided. The data line 6a has a laminated structure including an aluminum film or the like as described later, and the scanning line 3a is formed of, for example, a conductive polysilicon film. Further, the scanning line 3a is arranged so as to face a channel region 1a 'indicated by a hatched region in the semiconductor layer 1a, which rises to the right in the figure, and the scanning line 3a functions as a gate electrode. That is, pixel switching TFTs 30 are provided at the intersections of the scanning lines 3a and the data lines 6a, in which the main lines of the scanning lines 3a are opposed to each other as gate electrodes in the channel region 1a '.

  Next, as shown in FIG. 4, which is a cross-sectional view taken along the line AA ′ of FIG. 2, the electro-optical device is disposed to face the TFT array substrate 10 made of, for example, a quartz substrate, a glass substrate, or a silicon substrate. And a counter substrate 20 made of, for example, a glass substrate or a quartz substrate.

  As shown in FIG. 4, the pixel electrode 9a is provided on the side of the TFT array substrate 10, and an alignment film 16 on which a predetermined alignment process such as a rubbing process is performed is provided above the pixel electrode 9a. ing. The pixel electrode 9a is made of, for example, a transparent conductive film such as an ITO film. On the other hand, a counter electrode 21 is provided over the entire surface of the counter substrate 20, and an alignment film 22 on which a predetermined alignment process such as a rubbing process is performed is provided below the counter electrode 21. . The counter electrode 21 is made of a transparent conductive film such as an ITO film, like the pixel electrode 9a, and the alignment films 16 and 22 are made of a transparent organic film such as a polyimide film. An electro-optical material such as liquid crystal is sealed in a space surrounded by a sealing material (see FIGS. 19 and 20) described below between the TFT array substrate 10 and the opposing substrate 20 which are arranged so as to face each other. Is formed. The liquid crystal layer 50 assumes a predetermined alignment state by the alignment films 16 and 22 when no electric field is applied from the pixel electrode 9a. The liquid crystal layer 50 is made of, for example, an electro-optical material in which one or several kinds of nematic liquid crystals are mixed. The sealing material is an adhesive made of, for example, a photo-curing resin or a thermosetting resin for bonding the TFT substrate 10 and the counter substrate 20 around the periphery thereof, and is used for setting a distance between the two substrates to a predetermined value. Spacers such as glass fibers or glass beads are mixed.

  On the other hand, on the TFT array substrate 10, in addition to the pixel electrode 9a and the alignment film 16, various configurations including these are provided in a laminated structure. As shown in FIG. 4, the laminated structure includes, in order from the TFT array substrate 10, a first layer including the lower light-shielding film 11a, a second layer including the TFT 30 and the scanning line 3a, the storage capacitor 70, the data line 6a, and the like. , A fourth layer including the shield layer 400 and the like, and a fifth layer (uppermost layer) including the pixel electrode 9a and the alignment film 16 and the like. A base insulating film 12 is provided between the first and second layers, a first interlayer insulating film 41 is provided between the second and third layers, and a second interlayer insulating film 42 is provided between the third and fourth layers. A third interlayer insulating film 43 is provided between the fourth and fifth layers, respectively, to prevent short circuit between the above-described elements. In addition, the various insulating films 12, 41, 42, and 43 are also provided with, for example, contact holes for electrically connecting the high-concentration source region 1d in the semiconductor layer 1a of the TFT 30 and the data line 6a. I have. Hereinafter, each of these elements will be described in order from the bottom.

  First, the first layer includes, for example, a simple metal containing at least one of refractory metals such as Ti (titanium), Cr (chromium), W (tungsten), Ta (tantalum), and Mo (molybdenum). , An alloy, a metal silicide, a polysilicide, and a lower light-shielding film 11a formed by laminating them. The lower light-shielding film 11a is patterned in a lattice shape when viewed in a plan view, thereby defining an opening region of each pixel (see FIG. 2). In a region where the scanning line 3a and the data line 6a of the lower light-shielding film 11a intersect, a region is formed so as to project the corner of the pixel electrode 9a. The lower light-shielding film 11a is formed so as to cover the TFT 30, the scanning line 3a, the data line 6a, the storage capacitor 70, and a third relay layer 402 to be described later as viewed from below. The lower light-shielding film 11a may be extended from the image display area to the periphery thereof and connected to a constant potential source in order to prevent the potential fluctuation from adversely affecting the TFT 30.

  Next, a TFT 30 and a scanning line 3a are provided as a second layer. As shown in FIG. 4, the TFT 30 has an LDD (Lightly Doped Drain) structure, and includes a scanning line 3a that functions as a gate electrode as described above, for example, a scanning line made of a polysilicon film. A channel region 1a 'of the semiconductor layer 1a in which a channel is formed by an electric field from 3a, an insulating film 2 including a gate insulating film for insulating the scanning line 3a from the semiconductor layer 1a, a lightly doped source region 1b in the semiconductor layer 1a, A high concentration drain region 1c, a high concentration source region 1d and a high concentration drain region 1e are provided.

  The TFT 30 preferably has an LDD structure as shown in FIG. 4, but may have an offset structure in which impurities are not implanted in the low-concentration source region 1b and the low-concentration drain region 1c, or a part of the scanning line 3a. A self-aligned TFT in which a high concentration source region and a high concentration drain region are formed in a self-aligned manner by implanting impurities at a high concentration using a gate electrode formed of as a mask. Further, in the present embodiment, a single gate structure in which only one gate electrode of the pixel switching TFT 30 is disposed between the high-concentration source region 1d and the high-concentration drain region 1e has been described. Electrodes may be arranged. When a TFT is formed with a dual gate or triple gate or more as described above, a leak current at a junction between a channel and a source / drain region can be prevented, and a current in an off state can be reduced. Further, the semiconductor layer 1a constituting the TFT 30 may be a non-single-crystal layer or a single-crystal layer. For forming the single crystal layer, a known method such as a bonding method can be used. By using the semiconductor layer 1a as a single crystal layer, the performance of peripheral circuits in particular can be improved.

  Under the above-described lower light-shielding film 11a and below the TFT 30, a base insulating film 12 made of, for example, a silicon oxide film is provided. The base insulating film 12 has a function of interlayer insulating the TFT 30 from the lower light-shielding film 11a, and is formed over the entire surface of the TFT array substrate 10 so that the surface of the TFT array substrate 10 is roughened at the time of polishing the surface and dirt remaining after cleaning. It has a function of preventing a change in the characteristics of the pixel switching TFT 30.

  In the present embodiment, in particular, the base insulating film 12 has a groove having the same width as the channel length or a groove longer than the channel length (a groove formed in a contact hole shape) on both sides of the semiconductor layer 1a in plan view. ) 12cv is dug, and corresponding to the groove 12cv, the scanning line 3a stacked thereabove includes a portion formed in a concave shape on the lower side (in FIG. 2, it is not necessary to avoid complication). It was shown in the figure.) Further, since the scanning line 3a is formed so as to fill the entire groove 12cv, the horizontal protruding portion 3b integrally formed with the scanning line 3a is extended to the scanning line 3a. Has become. As a result, as shown in FIG. 2, the semiconductor layer 1a of the TFT 30 is covered from the side as viewed in plan, so that the incidence of light from at least this portion is suppressed. It has become. The horizontal protrusion 3b may be provided on only one side of the semiconductor layer 1a.

  Now, a storage capacitor 70 and a data line 6a are provided in the third layer following the second layer. The storage capacitor 70 includes a first relay layer 71 serving as a pixel potential side capacitor electrode electrically connected to the high concentration drain region 1 e and the pixel electrode 9 a of the TFT 30, and a capacitor electrode 300 serving as a fixed potential side capacitor electrode. It is formed by being opposed to each other with the dielectric film 75 interposed therebetween. According to the storage capacitor 70, the potential holding characteristic of the pixel electrode 9a can be significantly improved. In addition, as can be seen from the plan view of FIG. 2, the storage capacitor 70 according to the present embodiment is formed so as not to reach the light transmission region substantially corresponding to the formation region of the pixel electrode 9a. If it does, it is formed so that it may fit in the light shielding area. That is, in the storage capacitor 70, the lower light-shielding film 11 chamfers the corner of the pixel electrode 9a at a region overlapping the scanning line 3a between the adjacent data lines 6a and at a corner where the scanning line 3a and the data line 6a intersect. Formed in the area. As a result, the pixel aperture ratio of the entire electro-optical device is maintained relatively large, and a brighter image can be displayed.

  More specifically, the first relay layer 71 is made of, for example, a light-absorbing conductive polysilicon film and functions as a pixel potential side capacitance electrode. However, the first relay layer 71 may be formed of a single-layer film or a multilayer film containing a metal or an alloy. In the case of a multilayer film, the lower layer may be made of a light absorbing conductive polysilicon film, and the upper layer may be made of a light reflecting metal or alloy. The first relay layer 71 has a function of relay connection between the pixel electrode 9a and the high-concentration drain region 1e of the TFT 30 via the contact holes 83, 85, and 89, in addition to the function as the pixel potential side capacitor electrode. Have. As shown in FIG. 2, the first relay layer 71 is formed to have substantially the same shape as the planar shape of the capacitance electrode 300 described later.

  The capacitance electrode 300 functions as a fixed potential side capacitance electrode of the storage capacitor 70. In the first embodiment, in order to set the capacitance electrode 300 to a fixed potential, an electrical connection is made to the fixed potential shield layer 400 via the contact hole 87.

  However, in a mode in which the capacitor electrode 300 and the data line 6a are formed as separate layers as described later, preferably, for example, the capacitor electrode 300 is moved from the image display region 10a where the pixel electrode 9a is arranged to the periphery thereof. The capacitor electrode 300 may be maintained at a fixed potential by extending it and electrically connecting it to a constant potential source. Incidentally, the "constant potential source" described here may be a constant potential source of a positive power supply or a negative power supply supplied to the data line driving circuit 101, or a constant potential source supplied to the counter electrode 21 of the counter substrate 20. But it doesn't matter.

  In the present embodiment, particularly, the data line 6a is formed as the same film as the capacitor electrode 300. Here, the “same film” means that they are formed simultaneously as the same layer or in a manufacturing process. However, the space between the capacitor electrode 300 and the data line 6a is not formed continuously in a planar shape, but is separated from each other in patterning.

  Specifically, as shown in FIG. 2, the capacitor electrode 300 is formed so as to overlap with the formation region of the scanning line 3a, that is, while being divided along the X direction in the drawing. The layer 1a is formed so as to overlap in the longitudinal direction, that is, to extend in the Y direction in the drawing. More specifically, the capacitor electrode 300 includes a main line portion extending along the scanning line 3a, and a protruding portion (approximately in the drawing) protruding upward along the semiconductor layer 1a in a region adjacent to the semiconductor layer 1a in FIG. (A portion that looks like a trapezoid) and a constricted portion where a portion corresponding to a contact hole 85 described later is slightly constricted. Of these, the protrusion contributes to an increase in the formation area of the storage capacitor 70.

On the other hand, the data line 6a has a main line portion extending linearly along the Y direction in FIG. The high-concentration drain region 1e at the upper end in FIG. 2 of the semiconductor layer 1a has a shape that is bent to the right by 90 degrees at right angles so as to overlap the region of the protrusion of the storage capacitor 70. This is for avoiding the data line 6a and electrically connecting the semiconductor layer 1a and the storage capacitor 70 (see FIG. 4). The lower light-shielding film 11 also exists in a region where a contact hole 83 that electrically connects the semiconductor layer 1a and the first relay layer 71 of the storage capacitor 70 is formed.
In the present embodiment, patterning or the like is performed so that the above-described shape is exhibited, and the capacitor electrode 300 and the data line 6a are formed simultaneously.

Further, as shown in FIG. 4, the capacitor electrode 300 and the data line 6a are formed as a film having a two-layer structure of a lower layer made of conductive polysilicon and an upper layer made of aluminum. Of these, the data line 6a is electrically connected to the semiconductor layer 1a of the TFT 30 via a contact hole 81 penetrating an opening of the dielectric film 75 described later. Since the first relay layer 71 is made of a conductive polysilicon film, the electrical connection between the data line 6a and the semiconductor layer 1a is directly Is realized by the polysilicon film. That is, in order from the bottom, the polysilicon film of the first relay layer, the polysilicon film below the data line 6a, and the aluminum film thereabove. Therefore, it is possible to maintain good electrical connection between them. In the present embodiment, the data line 6a and the capacitor line 300 have a two-layer structure of a conductive polysilicon layer and an aluminum layer, but have a three-layer structure of a conductive polysilicon layer, an aluminum layer, and a titanium nitride layer in order from the bottom. You may.
According to this configuration, the titanium nitride layer functions as a barrier metal for preventing penetration of etching when the contact hole 87 is opened. Further, since the capacitor electrode 300 and the data line 6a include aluminum having relatively excellent light reflection performance and polysilicon including relatively excellent light absorption performance, they can function as a light shielding layer. That is, according to these, it is possible to block the progress of incident light (see FIG. 4) on the semiconductor layer 1a of the TFT 30 on the upper side.

  As shown in FIG. 4, the dielectric film 75 is, for example, a relatively thin silicon oxide film such as an HTO (High Temperature Oxide) film or an LTO (Low Temperature Oxide) film having a thickness of about 5 to 200 nm, or a silicon nitride film. Consists of From the viewpoint of increasing the storage capacitance 70, the thinner the dielectric film 75 is, the better the reliability of the film can be obtained. In the present embodiment, particularly, the dielectric film 75 has a two-layer structure such as a silicon oxide film 75a as a lower layer and a silicon nitride film 75b as an upper layer as shown in FIG. The upper silicon nitride film 75b is patterned so as to fit within the light shielding region (non-opening region). Thus, the presence of the silicon nitride film 75b having a relatively large dielectric constant allows the capacitance value of the storage capacitor 70 to be increased, and nevertheless, the presence of the silicon oxide film 75a The breakdown voltage of the storage capacitor 70 is not reduced. Thus, by making the dielectric film 75 have a two-layer structure, it is possible to enjoy two opposing effects. In addition, since the silicon nitride 75b having coloring properties is patterned so as not to be formed in a region through which light is transmitted, a decrease in transmittance can be prevented. Further, the presence of the silicon nitride film 75b makes it possible to prevent water from entering the TFT 30 before it occurs. As a result, in the present embodiment, a situation in which the threshold voltage of the TFT 30 rises does not occur, and the device can be operated for a relatively long time. In the present embodiment, the dielectric film 75 has a two-layer structure. In some cases, for example, a three-layer structure such as a silicon oxide film, a silicon nitride film, and a silicon oxide film, Or you may comprise so that it may have more laminated structures.

  Above the TFT 30 or the scanning line 3a described above and below the storage capacitor 70 or the data line 6a, for example, NSG (non-silicate glass), PSG (phosphorus silicate glass), BSG (boron silicate glass), BPSG ( A silicate glass film such as boron phosphorus silicate glass, a silicon nitride film, a silicon oxide film, or the like, or a first interlayer insulating film 41 preferably made of NSG is formed. In the first interlayer insulating film 41, a contact hole 81 for electrically connecting the high concentration source region 1d of the TFT 30 and the data line 6a is formed. In the first interlayer insulating film 41, a contact hole 83 for electrically connecting the high-concentration drain region 1e of the TFT 30 and the first relay layer 71 forming the storage capacitor 70 is opened.

  Note that, of the two contact holes, in the portion where the contact hole 81 is formed, an opening is formed so that the above-described dielectric film 75 is not formed, in other words, the dielectric film 75 is formed. I have. This is because it is necessary to establish electrical conduction between the high-concentration source region 1b and the data line 6a via the first relay layer 71 in the contact hole 81. Incidentally, if such an opening is provided in the dielectric film 75, when hydrogenation processing is performed on the semiconductor layer 1a of the TFT 30, hydrogen used for the processing is supplied to the semiconductor layer 1a through the opening. It is also possible to obtain the effect of being able to easily reach.

  In the present embodiment, the first interlayer insulating film 41 is baked at about 1000 ° C. to activate the ions implanted into the semiconductor layer 1a and the polysilicon film forming the scanning line 3a. You may.

  Now, a light-shielding shield layer 400 is formed on the fourth layer following the third layer. The shield layer 400 is formed in a lattice shape so as to extend in the X direction and the Y direction in FIG. 2 as shown in FIGS. 2 and 3 in plan view. In particular, a portion of the shield layer 400 extending in the Y direction in FIG. 2 is formed so as to cover the data line 6a and to be wider than the data line 6a. In addition, a portion extending in the X direction in FIG. 2 has a cutout near the center of one side of each pixel electrode 9a in order to secure a region for forming a third relay electrode 402 described later. . Further, substantially triangular portions are provided at the corners of the intersections of the shield layers 400 extending in the X and Y directions in FIG. 2 so as to correspond to the substantially trapezoidal protrusions of the capacitance electrode 300 described above. Has been. The light-shielding shield layer 400 may have the same width as the lower light-shielding film 11a, or may be wider or narrower than the lower light-shielding film 11a. However, except for the third relay layer 402, it is formed so as to cover the TFT 30, the scanning line 3a, the data line 6a, and the storage capacitor 70 when viewed from above. The shield layer 400 and the lower light-shielding film 11 define the corners of the pixel opening region, that is, four corners, and each side of the pixel opening region.

  The shield layer 400 extends from the image display area 10a in which the pixel electrode 9a is arranged to the periphery thereof, and is electrically connected to a constant potential source to have a fixed potential. The “constant potential source” described here may be a constant potential source of a positive power supply or a negative power supply supplied to the data line driving circuit 101 or a constant potential source supplied to the counter electrode 21 of the counter substrate 20. But it doesn't matter.

  As described above, the capacitance formed between the data line 6a and the pixel electrode 9a is formed so as to cover the entire data line 6a (see FIG. 3). It is possible to eliminate the influence of the coupling. That is, it is possible to avoid a situation in which the potential of the pixel electrode 9a fluctuates in accordance with the energization of the data line 6a, which may cause display unevenness or the like along the data line 6a on an image. Can be reduced. Also in the present embodiment, since the shield layer 400 is formed in a lattice shape, it is possible to suppress unnecessary capacitive coupling even at a portion where the scanning line 3a extends, so that unnecessary capacitive coupling does not occur. ing. In addition, the above-described triangular portion of the shield layer 400 can eliminate the influence of the capacitive coupling generated between the capacitor electrode 300 and the pixel electrode 9a. The effect will be obtained.

  In the fourth layer, a third relay layer 402, which is an example of the “relay layer” in the present invention, is formed as the same film as the shield layer 400. The third relay layer 402 has a function of relaying an electrical connection between the first relay layer 71 forming the storage capacitor 70 and the pixel electrode 9a via a contact hole 89 described later. The space between the shield layer 400 and the third relay layer 402 is not continuously formed in a planar shape, like the above-described capacitance electrode 300 and data line 6a. It is formed so that.

  On the other hand, the above-described shield layer 400 and third relay layer 402 have a two-layer structure of a lower layer made of aluminum and an upper layer made of titanium nitride. Accordingly, first, the titanium nitride is expected to have an effect as a barrier metal for preventing penetration of the etching when the contact hole 89 is opened. In the third relay layer 402, the lower layer made of aluminum is connected to the first relay layer 71 constituting the storage capacitor 70, and the upper layer made of titanium nitride is connected to the pixel electrode 9a made of ITO or the like. It is supposed to be. In this case, in particular, the latter connection will be performed well. In this regard, if the form in which aluminum and ITO are directly connected to each other is taken, electrolytic corrosion occurs between the two, and disconnection of aluminum or insulation due to formation of alumina, etc., makes a preferable electrical connection. In contrast to not being realized. As described above, in the present embodiment, since the electrical connection between the third relay layer 402 and the pixel electrode 9a can be satisfactorily realized, the voltage is applied to the pixel electrode 9a or the potential holding characteristic of the pixel electrode 9a. Can be maintained satisfactorily.

  Further, since the shield layer 400 and the third relay layer 402 include aluminum having relatively excellent light reflection performance and titanium nitride having relatively excellent light absorption performance, they can function as a light shielding layer. That is, according to these, it is possible to block the progress of the incident light (see FIG. 2) on the semiconductor layer 1a of the TFT 30 on the upper side. As described above, the same can be said for the above-described capacitance electrode 300 and data line 6a. In the present embodiment, the shield layer 400, the third relay layer 402, the capacitor electrode 300, and the data line 6a form a part of a laminated structure built on the TFT array substrate 10 and emit light from above to the TFT 30. Paying attention to the fact that it constitutes an upper light-shielding film that blocks incident light or “a part of the laminated structure”, it can function as an “internal light-shielding film”. According to the concept of “upper light-shielding film” or “built-in light-shielding film”, in addition to the above-described configuration, the scanning line 3a, the first relay layer 71, and the like can be considered as being included therein. In short, under the premise that it is understood in the broadest sense, any structure made of an opaque material constructed on the TFT array substrate 10 can be called an “upper light-shielding film” or an “internal light-shielding film”.

  Above the above-described data line 6a and below the shield layer 400, a silicate glass film such as NSG, PSG, BSG, BPSG, etc., a silicon nitride film, a silicon oxide film, or the like, or preferably a NSG A two-layer insulating film 42 is formed. In the second interlayer insulating film 42, a contact hole 87 for electrically connecting the shield layer 400 and the capacitor electrode 300, and a third relay layer 402 and the first relay layer 71 are electrically connected. Contact holes 85 for connection are respectively formed. In the first embodiment, since the third relay layer 402 is formed, the electrical connection between the pixel electrode 9a and the TFT 30 is established via three contact holes 83, 85, and 89, ie, , Through three interlayer insulating films 41, 42 and 43. As described above, by connecting the relatively short contact holes to establish electrical connection between the pixel electrode 9a and the TFT 30, the relatively short contact holes can be used rather than the relatively long contact holes. The ease of manufacturing the holes provides an advantage that the electro-optical device can be manufactured at lower cost and with higher reliability.

  In addition, the stress generated near the interface of the capacitor electrode 300 may be reduced by not performing the above-described firing on the first interlayer insulating film 41 on the second interlayer insulating film 42.

  Finally, in the fifth layer, the pixel electrodes 9a are formed in a matrix as described above, and the alignment film 16 is formed on the pixel electrodes 9a. The pixel electrode 9a may have a shape in which a corner is cut. Under the pixel electrode 9a, a silicate glass film such as NSG, PSG, BSG, or BPSG, a silicon nitride film, a silicon oxide film, or the like, or a third interlayer insulating film 43 preferably made of BPSG is formed. A contact hole 89 for electrically connecting the pixel electrode 9a and the third relay layer 402 is formed in the third interlayer insulating film 43. In the present embodiment, particularly, the surface of the third interlayer insulating film 43 is planarized by a CMP (Chemical Mechanical Polishing) process or the like, and a liquid crystal layer caused by a step due to various wirings, elements, and the like present below the surface. 50 misalignment is reduced. However, not only the flattening process is performed on the third interlayer insulating film 43 as described above, but also at least one of the TFT array substrate 10, the base insulating film 12, the first interlayer insulating film 41, and the second interlayer insulating film 42. The flattening process may be performed by digging a groove and embedding the wiring such as the data line 6a or the TFT 30 or the like. Alternatively, the flattening process may be performed only on the above-described groove without performing the flattening process on the third interlayer insulating film 43.

  In the electro-optical device according to the present embodiment having the above-described configuration, the following operation and effect can be obtained.

  First, in the above-described electro-optical device, the scanning line 3a and the data line 6a, and the storage capacitor 70 and the shield layer 400 are each in a region where the pixel electrode 9a is not formed, that is, in a complementary relationship with the region where the pixel electrode 9a is formed. It is formed in a certain light shielding area (see FIG. 2). As a result, a configuration is realized in which various elements in the stacked structure are not located in the pixel electrode formation region substantially coincident with the light transmission region, and the electro-optical device according to the present embodiment has an extremely high aperture ratio. It can be realized and maintained.

  In addition, in the present embodiment, although various elements such as the storage capacitor 70 and the shield layer 400 are formed so as to be confined in the light-shielding region, there is no particular problem in the operation of the electro-optical device. not. That is, as described above, since the dielectric film 75 as a component of the storage capacitor 70 includes the silicon nitride film 75b having a relatively large dielectric constant, the storage capacitor 70 is confined in the light-shielding region. Alternatively, even if it is formed so as to slightly suppress its planar spread, it is possible to enjoy sufficient charge storage characteristics. Further, since the shield layer 400 is formed so as to cover at least the data line 6a as well shown in FIG. 2, the data line 6a and the pixel electrode 9a are directly opposed to each other. Therefore, the effect of eliminating the influence of the capacitive coupling can be sufficiently enjoyed.

  As described above, according to the electro-optical device according to the present embodiment, by achieving a high aperture ratio and a high contrast, it is possible to display an image having higher quality such as a brighter image.

  (Second Embodiment: Case Where Shield Layer and Data Line are Formed on Separate Layers) Hereinafter, an electro-optical device according to a second embodiment of the present invention will be described with reference to FIGS. I do. Here, FIG. 5 is a view having the same meaning as FIG. 2 and is a plan view of a plurality of adjacent pixel groups of the TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed. FIG. 6 is a view having the same effect as FIG. 3 and is a cross-sectional view taken along line AA ′ of FIG. FIG. 7 is a plan view showing a characteristic aspect of forming a nitride film in the second embodiment. The electro-optical device according to the second embodiment has a configuration substantially similar to the configuration of the pixel portion of the electro-optical device according to the first embodiment. Therefore, in the following, only the main features of the second embodiment will be mainly described, and the description of the remaining portions will be omitted or simplified as appropriate.

  In the second embodiment, as shown in FIG. 6, as compared with FIG. 4, the point that the capacitor electrode 300 serving as the upper electrode and the data line 6 a constituting the storage capacitor 70 are not formed as the same film, and Thus, the number of interlayer insulating films has been increased. That is, there is a significant difference in that a “fourth interlayer insulating film 44” is further provided, and that the relay electrode 719 is formed as the same film as the gate electrode 3aa. Thus, in order from the top of the TFT array substrate 10, a first layer including the lower light-shielding film 11a also serving as a scanning line, a second layer including the TFT 30 having the gate electrode 3aa, a third layer including the storage capacitor 70, and a data line. A fourth layer including 6a and the like, a fifth layer on which the shield layer 404 is formed, and a sixth layer (uppermost layer) including the pixel electrode 9a and the alignment film 16 and the like. A base insulating film 12 is provided between the first and second layers, a first interlayer insulating film 41 is provided between the second and third layers, and a second interlayer insulating film 42 is provided between the third and fourth layers. , A third interlayer insulating film 43 is provided between the fourth and fifth layers, and a fourth interlayer insulating film 44 is provided between the fifth and sixth layers, respectively. Has been prevented.

  Further, instead of forming the scanning line 3a on the second layer in the first embodiment, in the second embodiment, a gate electrode 3aa instead of the scanning line 3a is formed, and the same film as the gate electrode 3aa is formed. A relay electrode 719 is newly formed. Hereinafter, the configuration in each layer will be described in more detail.

  First, a gate electrode 3aa is formed in the second layer so as to face the channel region 1a 'of the semiconductor layer 1a. The gate electrode 3aa is not formed linearly like the scanning line 3a of the first embodiment, and the semiconductor layer 1a or the channel region 1a 'is formed in an island shape on the TFT array substrate 10. Are formed in an island shape. Further, in the second embodiment, the bottom of the groove 12cv forming the contact hole has a depth in contact with the surface of the lower light-shielding film 11a of the first layer. 11a is formed in a stripe shape extending in the X direction in FIG. As a result, the gate electrode 3aa formed on the groove 12cv is electrically connected to the lower light-shielding film 11a via the groove 12cv. That is, in the second embodiment, a scanning signal is supplied to the gate electrode 3aa through the lower light-shielding film 11a. In other words, the lower light-shielding film 11a of the second embodiment functions as a scanning line.

  As shown in FIG. 5, the lower light-shielding film 11a according to the second embodiment has a protrusion along the direction in which the data line 6a extends. Thus, the lower light-shielding film 11a of the second embodiment also exhibits a light-shielding function comparable to that of the lattice-shaped lower light-shielding film 11a of the first embodiment. However, the protruding portions extending from the adjacent lower light-shielding films 11a do not contact each other, and are electrically insulated from each other. Otherwise, the lower light-shielding film 11a cannot function as a scanning line. In the region where the lower light-shielding film 11a intersects with the data line 6a, a region is formed so as to protrude the corner of the pixel electrode 9a. The lower light-shielding film 11a covers the TFT 30, the scanning line 3a, the data line 6a, the storage capacitor 70, the shield relay layer 6a1, the second relay layer 6a2, and the third relay layer 406 as viewed from below. Is formed.

  In the second embodiment, in particular, the relay electrode 719 is formed as the same film as the gate electrode 3aa. As shown in FIG. 5, the relay electrode 719 is formed in an island shape so as to be located substantially at the center of one side of each pixel electrode 9a as shown in FIG. Since the relay electrode 719 and the gate electrode 3aa are formed as the same film, if the latter is made of, for example, a conductive polysilicon film, the former is also made of a conductive polysilicon film.

Next, in the third layer, the first relay layer 71, the dielectric film 75, and the capacitor electrode 300 that constitute the storage capacitor 70 are formed. The first relay layer 71 is formed of polysilicon. Since the capacitor electrode 300 is no longer formed at the same time as the data line 6a, as in the first embodiment, aluminum is used for the purpose of paying attention to the electrical connection between the data line 6a and the TFT 30. It is not always necessary to adopt a two-layer structure of a film and a conductive polysilicon film. Accordingly, the capacitor electrode 300 includes, for example, at least one of refractory metals such as Ti, Cr, W, Ta, and Mo, as in the lower light-shielding film 11a, a simple metal, an alloy, a metal silicide, It is preferable to use a light-shielding material such as polysilicide or a laminate thereof. According to this, the capacitor electrode 300 can better exhibit the function as the above-described “upper light-shielding film” or “built-in light-shielding film” (however, regarding the material forming the capacitor electrode 300 according to the second embodiment, , See below). Further, for the same reason, that is, since the capacitor electrode 300 and the data line 6a are formed in different layers, it is not necessary to achieve electrical insulation between them in the same plane. Therefore, the capacitor electrode 300 can be formed as a part of a capacitor line extending in the direction of the scanning line 3a.
Since this storage capacitor 70 is formed between the TFT 30 and the data line 6a, as shown in FIG. 5, it is formed in a cross shape in the extending direction of the scanning line 3a and the extending direction of the data line 6a. . Thereby, the storage capacitance can be increased, and the light-shielding capacitance electrode 300 can enhance the light-shielding effect on the TFT 30. Further, when the storage capacitor 70 is formed at the corner of the pixel electrode 6a where the lower light-shielding film 11 and the shield layer 400 are formed, the storage capacitance can be further increased and the light-shielding property can be improved.

  As described above, the first interlayer insulating film 41 is formed above the gate electrode 3aa and the relay electrode 719 and below the storage capacitor 70, and the first interlayer insulating film 41 is substantially the same as described above. In addition, a silicate glass film such as NSG, PSG, BSG, or BPSG, a silicon nitride film, a silicon oxide film, or the like may be used. Further, a contact hole 881 is formed in the first interlayer insulating film 41 so as to have an electrical connection point on the lower surface of the first relay layer 71 in FIG. 6. Thereby, electrical connection between the first relay layer 71 and the relay electrode 719 is achieved. The first interlayer insulating film 41 is provided with a contact hole 882 that is formed so as to penetrate the second interlayer insulating film 42, which will be described later, in order to establish electrical connection with a second relay layer 6a2 described later. Have been.

  On the other hand, in the fourth layer, the data line 6a may be made of aluminum alone or an aluminum alloy.

  In the second embodiment, in particular, as described above, the data lines 6a made of aluminum or the like are arranged in order from the lower layer, such as a layer made of aluminum (see reference numeral 41A), a layer made of titanium nitride (see reference numeral 41TN), and a nitride layer. It is formed as a film having a three-layer structure of a layer made of a silicon film (see reference numeral 401). The silicon nitride film 401 is patterned to have a slightly larger size so as to cover the lower aluminum layer and titanium nitride layer. Since the data line 6a contains aluminum, which is a relatively low-resistance material, supply of image signals to the TFT 30 and the pixel electrode 9a can be realized without interruption. On the other hand, the formation of the silicon nitride film having a relatively excellent effect of blocking the intrusion of moisture on the data line 6a can improve the moisture resistance of the TFT 30 and can prolong its life. The silicon nitride film is preferably a plasma silicon nitride film.

  Silicon Nitride Film 401 The silicon nitride film 401 according to the present embodiment includes, in addition to the data lines 6a, the pixel electrodes 9a arranged in a matrix and the data lines 6a and the scanning lines arranged so as to sew these gaps. It is also formed in a square shape around the image display area 10a defined as the area where 3a is formed. Note that the thickness of the titanium nitride film and the silicon nitride film 401 is preferably set to, for example, about 10 to 100 nm, and more preferably about 10 to 30 nm.

  As described above, the silicon nitride film 401 according to the present embodiment is entirely formed on the TFT array substrate 10 in a shape schematically shown in FIG. In FIG. 7, the silicon nitride film 401 existing around the image display area 10a prevents moisture from penetrating into CMOS (Complementary MOS) type TFTs constituting the data line driving circuit 101 and the scanning line driving circuit 104 described later. (See FIG. 19). However, since nitride is expected to have a lower etching rate in dry etching and the like than other general materials, it is difficult to form the silicon nitride film 401 in a region around the image display region 10a. If it is necessary to form a contact hole or the like in the region, a hole corresponding to the position of the contact hole may be formed in the silicon nitride film 401 in advance. If this is performed at the same time as performing the patterning as shown in FIG. 7, this contributes to simplification of the manufacturing process.

  In the fourth layer, the same layer as the data line 6a is used as the shield layer relay layer 6a1 and the second relay layer 6a2 (however, the meaning is slightly different from the "second relay layer" in the first embodiment). Is formed. The former is a relay layer for electrically connecting the light-shielding shield layer 404 and the capacitor electrode 300, and the latter is a relay layer for electrically connecting the pixel electrode 9a and the first relay layer 71. It is a relay layer. It goes without saying that these are made of the same material as the data lines 6a.

As described above, the second interlayer insulating film 42 is formed above the storage capacitor 70 and below the data line 6a, the shield relay layer 6a1, and the second relay layer 6a2. The film 42 may be composed of a silicate glass film such as NSG, PSG, BSG, or BPSG, a silicon nitride film, a silicon oxide film, or the like, in substantially the same manner as described above.
When aluminum is used for the capacitor electrode 300, it is necessary to form a film at a low temperature by plasma CVD. In the second interlayer insulating film 42, a contact hole 801 and the contact hole 882 are formed so as to correspond to the relay layer 6a1 for the shield layer and the second relay layer 6a2.

Next, a light-shielding shield layer 404 is formed on the fifth layer. For example, similarly to the above-described shield layer 400, it may have a two-layer structure in which an upper layer is made of titanium nitride and a lower layer is made of aluminum. In some cases, ITO or other conductive material may be used. May be configured. The shield layer 404 is electrically connected to the capacitor electrode 300 via the shield layer relay layer 6a1 described above. As a result, the shield layer 404 has a fixed potential, and eliminates the influence of capacitive coupling generated between the pixel electrode 9a and the data line 6a as in the first embodiment. The light-shielding shield layer 400 may have the same width as the lower light-shielding film 11a, or may be wider or narrower than the lower light-shielding film 11a. However, except for the third relay layer 406, it is formed so as to cover the TFT 30, the scanning line 3a, the data line 6a, and the storage capacitor 70 when viewed from above. The shield layer 400 and the lower light-shielding film 11 define the corners of the pixel opening region, that is, four corners, and each side of the pixel opening region.
Further, a third relay layer 406 is formed on the fifth layer as the same film as the shield layer 404.

  The third interlayer insulating film 43 is formed above the data line 6a and below the shield layer 404 as described above. The material and the like forming the third interlayer insulating film 43 may be the same as those of the second interlayer insulating film 42 described above. However, when the data line 6a or the like contains aluminum or the like as described above, the third interlayer insulating film 43 is preferably formed by a low-temperature forming method such as a plasma CVD method in order to avoid exposing the same to a high-temperature environment. It is preferable to use a film method.

  In the third interlayer insulating film 43, a contact hole 803 for electrically connecting the shield layer 404 to the shield layer relay layer 6a1 is formed. And a contact hole 804 corresponding to the third relay layer 406 is formed.

  The remaining configuration is such that the pixel electrode 9a and the alignment film 16 are formed in the sixth layer, and the fourth interlayer insulating film 44 is formed between the sixth layer and the fifth layer. 44, a contact hole 89 for electrically connecting the pixel electrode 9a to the third relay layer 406 is formed.

  In the above-described configuration, the third relay layer 406 comes into direct contact with the pixel electrode 9a made of ITO or the like. Therefore, considering this, it is preferable that the shield layer 404 and the third relay layer 406 have a two-layer structure made of aluminum and titanium nitride, as in the first embodiment. Further, even if the shield layer 404 and the third relay layer 406 are made of ITO, between the shield layer 404 and the shield layer relay layer 6a1, or between the third relay layer 406 and the second relay layer 6a2, the ITO and aluminum There is no need to worry about the occurrence of galvanic corrosion since direct contact can be avoided. Alternatively, in the second embodiment, as described above, since the capacitor electrode 300 can be configured as a part of the capacitor line, in order to set the capacitor electrode 300 to a fixed potential, the capacitor line must be connected to the image display area. What is necessary is just to set it as the form extended to outside 10a and connected to a constant potential source. In this case, the capacitance line including the capacitance electrode 300 can be connected to a constant potential source by itself, and the shield layer 404 can also be connected to a constant potential source by itself. Therefore, when such a configuration is employed, it is not necessary to provide the contact holes 801 and 803 for electrically connecting the two. Therefore, in this case, when selecting the material for forming the shield layer 404 and the capacitor electrode 300 and selecting the material for the shield layer relay layer 6a1 (the shield relay layer 6a1 is no longer necessary in the first place). It is not necessary to consider the occurrence of “electrolytic corrosion”.

  In the electro-optical device according to the second embodiment having the above-described configuration, first, it is apparent that substantially the same operation and effect as those in the above-described first embodiment are exerted. That is, similarly to the first embodiment, by achieving a high aperture ratio and a high contrast, it is possible to display a high-quality image such as a brighter image.

  In the second embodiment, in particular, since the silicon nitride film 401 is formed on the data line 6a and around the image display area 10a, it is possible to further improve the moisture resistance of the TFT 30. Become. That is, as described above, the nitride film or the nitride is excellent in the function of blocking the intrusion or diffusion of moisture, so that the infiltration of moisture into the semiconductor layer 1a of the TFT 30 can be prevented. In the second embodiment, in addition to this, a nitride film may be used for the shield layer 404, the third relay layer 406, and the like, and the dielectric film 75 forming the storage capacitor 70. If a film is provided, the effect of preventing moisture penetration will be exhibited more effectively. However, it is needless to say that a form in which no “nitride film” is provided may be adopted.

  In the second embodiment, since the silicon nitride film 401 exists only on the data line 6a except for the region outside the image display region 10a in the new fourth layer, a large internal stress concentrates. The silicon nitride film 401 itself breaks down due to its internal stress, and the stress acts on the outside, so that the silicon nitride film 401 exists around the silicon nitride film 401, for example, the third interlayer insulating film 43 or the like. There is no possibility that cracks will occur. This is clearer assuming that the nitride film is provided on the entire surface of the TFT array substrate 10.

  Further, since the thickness of the titanium nitride film and the silicon nitride film 401 in the second embodiment is relatively small, about 10 to 100 nm, and more preferably about 10 to 30 nm, Can be enjoyed more effectively.

  In addition, in the second embodiment, in particular, since the relay electrode 719 is provided, the following operation and effect can be obtained. That is, in FIG. 4, in order to achieve the electrical connection between the TFT 30 and the pixel electrode 9a, as in the contact hole 85 in FIG. It was necessary to make contact on the "upper surface" in FIG.

  However, in such a mode, in the step of forming the capacitor electrode 300 and the dielectric film 75, when etching the precursor film thereof, the first relay layer 71 located immediately below the precursor film is soundly left. A very difficult manufacturing process of performing the etching of the precursor film must be performed. In particular, when a high dielectric constant material is used as the dielectric film 75 as in the present invention, etching is generally difficult, and the etching rate of the capacitor electrode 300 and the etching rate of the high dielectric constant material are not uniform. And the like also overlap, so that the difficulty of the manufacturing process is further increased. Therefore, in such a case, there is a high possibility that so-called “penetration” or the like is caused in the first relay layer 71. In such a case, in the worst case, a short circuit may occur between the capacitor electrode 300 constituting the storage capacitor 70 and the first relay layer 71.

  However, by providing the relay electrode 719 as in this embodiment, an electrical connection point is provided on the “lower surface” of the first relay layer 71 in the drawing, thereby realizing an electrical connection between the TFT 30 and the pixel electrode 9a. By doing so, the above-described problem does not occur. This is because, as is evident from FIG. 6, in the present embodiment, there is no need to perform a step of leaving the first relay layer 71 while etching the precursor film of the capacitor electrode 300 and the dielectric film 75.

  As described above, according to the present embodiment, it is not necessary to go through the difficult etching process as described above, so that the electrical connection between the first relay layer 71 and the pixel electrode 9a can be satisfactorily realized. This is because electrical connection between the two is realized via the relay electrode 719. Furthermore, for the same reason, according to the present embodiment, the possibility that a short circuit occurs between the capacitor electrode 300 and the first relay layer 71 is extremely small. That is, it is possible to preferably form the storage capacitor 70 without defects.

  In addition, in the second embodiment, in particular, as described above, since the capacitor electrode 300 can be formed as a part of the capacitor line, each of the capacitor electrodes provided corresponding to each pixel can be formed. In this case, it is not necessary to separately provide a conductive material or the like for setting these to a fixed potential, and it is only necessary to adopt a mode such as connecting each capacitor line to a fixed potential source. Therefore, according to the present embodiment, the manufacturing process can be simplified, the manufacturing cost can be reduced, and the like.

  In addition, the capacitance line including the capacitance electrode may be formed to have a two-layer structure including the aluminum film and the polysilicon film, as in the first embodiment. If the capacitor line includes an aluminum film, the capacitor line can enjoy high electrical conductivity. Thus, in such an embodiment, the narrowing of the capacitance line, that is, the narrowing of the storage capacitor 70 can be realized without any special restriction. Therefore, in the second embodiment, the aperture ratio can be further improved. In other words, in other words, since the capacitance line is conventionally formed of a single material such as polysilicon or WSi, if the aperture ratio is reduced to increase the aperture ratio, the material has a high resistance. For this reason, crosstalk and burn-in have occurred, but in the second embodiment, there is no risk of suffering such a problem.

  Incidentally, in such a form, since the aluminum film has light reflectivity and the polysilicon film has light absorbency, as described in the first embodiment, the capacitance line functions as a light shielding layer. It can be expected that it will. Further, in such a capacity line, the internal stress can be reduced as compared with the conventional one (the internal stress of aluminum is smaller than that of WSi or the like). Therefore, in this embodiment, it is possible to make the third interlayer insulating film 43 and the like, which are in contact with the capacitance line, as thin as possible, and it is possible to further reduce the size of the electro-optical device.

(Third Embodiment: Configuration of Storage Capacitor)
Hereinafter, the configuration of the storage capacitor according to the second embodiment, more specifically, an embodiment in which the storage capacitor is configured to be three-dimensional will be described with reference to FIGS. 8 and 9. Here, FIG. 8 is a cross-sectional view taken along the line BB ′ of FIG. 5 when a storage capacitor 70DFB having a three-dimensional structure described later is formed, and FIG. 9 is a diagram illustrating the storage capacitor 70DFB corresponding to one pixel. It is a perspective view which shows the three-dimensional structure of. Note that FIG. 9 does not illustrate all the configurations illustrated in FIGS. 5 and 6. For example, some components such as the dielectric film 75 configuring the storage capacitor 70 DFB may be appropriately illustrated. It has been omitted. In FIG. 9, for simplicity, the capacitance electrode 300DFB is not illustrated as having a two-layer structure.

  8 and 9, the storage capacitor 70DFB includes a portion formed along the direction in which the semiconductor layer 1a or the data line 6a extends (hereinafter, referred to as a “three-dimensional portion”) and the lower light-shielding film 11a. (Hereinafter, referred to as a “planar portion”).

  In the former three-dimensional portion, a convex portion 71DFBA is formed as a part of the first relay layer 71DFB, and a capacitor is formed by forming a dielectric film and a capacitor electrode 300DFB on the convex portion 71DFBA. It is configured. Thereby, the storage capacitor 70DFB has a structure including a portion where the first relay layer 71DFB, the dielectric film, and the capacitor electrode 300DFB form a laminated structure along a plane rising with respect to the surface of the substrate. The cross-sectional shape of the storage capacitor 70DFB includes a convex shape.

  Here, it is preferable that the height of such a convex shape or the height H of the convex portion 71DFBA (see FIG. 9) be about 50 to 1000 nm. If it is less than this range, the effect of increasing the storage capacity cannot be sufficiently obtained, and if it is more than this range, the steps will be too large, and disadvantages such as poor alignment in the liquid crystal layer 50 due to the steps will occur. Is caused.

  On the other hand, the latter planar portion is formed so that the first relay layer 71DFB, the dielectric film, and the capacitor electrode 300DFB form a laminated structure, each having a planar shape along a plane parallel to the surface of the substrate. Have been.

  The three-dimensional portion and the two-dimensional portion each have a continuous structure. That is, between the two portions, the first relay layer 71DFB is the first relay layer 71DFB, and the capacitor electrode 300DFB is the capacitor electrode 300DFB, each of which has an integrated structure, and constitutes one capacitor as a whole. More specifically, when the first relay layer 71 is viewed in a plan view, as is particularly apparent in FIG. 9, a portion extending along the direction of the data line 6a and extending between the two contact holes 81, and a portion extending downward from the portion. The portion extending in the direction of the side light-shielding film 11a and extending to the adjacent TFT 30 has a so-called “T-shaped” shape due to the extending portion. In addition, when viewed in a plan view, the capacitor electrode 300 is formed so as to overlap with the lower light-shielding film 11a as described above, and more specifically, the main line portion extending along the lower light-shielding film 11a. And protrusions projecting upward and downward along the data line 6a from locations intersecting the data line 6a in the figure. Of these, the protruding portion contributes to an increase in the formation region of the storage capacitor 70DFB by utilizing the region above the lower light-shielding film 11a and the region below the data line 6a.

  Incidentally, as described above, since the portion of the storage capacitor 70 extending to the data line 6a is formed as a three-dimensional portion including a convex shape, as shown in FIG. On the surface of the formed interlayer insulating film, a protrusion 43A is formed via a shield layer 404 and the like. That is, as shown in FIG. 8, a barrier is provided between the pixel electrodes 9a adjacent to each other in the left-right direction.

  As can be seen from FIG. 9, the storage capacitor 70DFB having such a configuration is formed so as to be confined in a light-shielding area including the area where the scanning line 3a and the data line 6a are formed. There is nothing to bring.

  In the electro-optical device according to the present embodiment having such a configuration, the following operation and effect can be obtained due to the existence of the storage capacitor 70DFB.

  First, in the present embodiment, since the cross-sectional shape of the storage capacitor 70DFB is configured to include a convex shape, the effect of increasing the capacitance can be expected only in the area of the side surface of the convex shape. This becomes clear from a comparison between FIG. 9 which has already been referred to and FIG. 10 which is a diagram having the same purpose as the diagram but shows a configuration example of the storage capacitor 70 which does not include a three-dimensional portion. In FIG. 10, the storage capacitor 70 has a lower electrode and an upper electrode formed by the relay layer 71 and the capacitor electrode 300 which are formed in a plane, and the data as shown in FIG. The configuration has no three-dimensional portion along the line 6a (corresponding to the storage capacitor 70 itself shown in the cross-sectional view of FIG. 6).

  As is clear from FIGS. 9 and 10, in the present embodiment, the convex portion 71 DFBA having a height H is a part of the first relay layer 71 DFBA substantially by the length L between the contact holes 81 and 83. It can be seen that the storage capacitor 70DFB in FIG. 9 has an overall area increased by about 2HL as a whole as compared with FIG. Here, "L" represents the length of the capacitor electrode 300DFB along the data line 6a. It goes without saying that the area of 2HL corresponds to the area of the side wall portion of the three-dimensional portion.

  Therefore, according to the present embodiment, the area of the capacitor electrode 300DFB as the fixed-potential-side capacitor electrode and the first relay layer 71DFB as the pixel-potential-side capacitor electrode, which constitute the storage capacitor 70DFB, are not planarly increased. Since the capacity can be increased, it is possible to increase the storage capacity 70DFB while maintaining a high aperture ratio, thereby displaying a high-quality image without display unevenness and flicker. You can do it.

Further, in the present embodiment, as described above, in order to make the cross-sectional shape of the storage capacitor 70DFB include a convex shape, the first relay layer 71DFB is formed with the convex portion 71DFBA which is a part thereof. As a result, its manufacture is easy.
That is, since the convex portion 71DFBA or the convex shape can be formed during the process of forming the first relay layer 71DFB, for example, a material is separately prepared or another process is performed to form the convex shape. In view of this, the manufacturing cost can be reduced correspondingly.

  Further, in the present embodiment, since the portion including the convex shape of the storage capacitor 70DFB is formed along the data line 6a, the following operation and effect can be obtained. That is, when the electro-optical device according to the present embodiment is driven by the 1S inversion driving method, it is possible to suppress the generation of the lateral electric field generated between the pixel electrodes adjacent to each other across the data line 6a. It is. This is because, as shown in FIG. 8, the second interlayer insulating film 42, the shield layer 404, etc. are formed on the surface of the fourth interlayer insulating film 44 formed on the convex portion 71DFBA which is a part of the first relay layer 71DFB. This is due to the fact that the convex portion 43A is formed through the intermediate portion. That is, first, if the pixel electrode 9a is formed so that the edge of the pixel electrode 9a is mounted on the convex portion 43A, the distance between the counter electrode 21 and the pixel electrode 9a becomes G1 as shown in FIG. This is because the vertical electric field and the electric field applied in the vertical direction in FIG. 8 can be increased accordingly.

  Second, regardless of whether the edge of the pixel electrode 9a exists on the protrusion 43A or not, the lateral electric field itself can be weakened depending on the dielectric constant of the protrusion 43A. Thirdly, as the gap between the projection 43A and the counter electrode 21 is narrowed from G1 to G3 as shown in FIG. 8, the volume thereof, that is, the volume of the liquid crystal layer 50 located in the gap, is increased. Can be reduced, so that the influence of the lateral electric field on the liquid crystal layer 50 can be relatively reduced.

  As described above, according to the present embodiment, it is possible to suppress the generation of the lateral electric field that may occur across the data line 6a, and thus the alignment state of the liquid crystal molecules in the liquid crystal layer 50 due to the lateral electric field. It is possible to reduce the possibility that the image will be disturbed, so that a high-quality image can be displayed.

  In FIGS. 8 and 9, the cross-sectional shape of the convex portion 71DFBA is rectangular, but the present invention is not limited to such a form. For example, the cross-sectional shape may be substantially trapezoidal (that is, the convex portion 71DFBA may be substantially trapezoidal in the viewpoint of FIG. 8). In this case, when the dielectric film and the capacitor electrode 300DFB serving as the upper electrode are formed on the convex portion, since the angular portion does not exist as shown in FIGS. There is almost no need to worry about deterioration. Therefore, according to such an embodiment, it is possible to preferably form the dielectric film and the capacitor electrode.

(Fourth Embodiment: Modification of Interlayer Insulating Film as Base of Pixel Electrode)
Hereinafter, as the fourth embodiment of the present invention, in the electro-optical device according to the above-described first embodiment, the configuration related to the third interlayer insulating film 43 disposed as the base of the pixel electrode 9a, and more specifically, Matters related to a modification of the planarization process for the interlayer insulating film 43 and the like will be described with reference to FIGS. Here, FIG. 11 is an explanatory diagram for describing a generation mechanism of the lateral electric field. FIG. 12 is a view having the same concept as FIG. 6 relating to the electro-optical device according to the second embodiment described above, in which a projection for preventing generation of a lateral electric field is provided (however, the accumulation FIG. 13 is a cross-sectional view taken along the line GG ′ of FIG. 5 when the protrusion is provided.

  In the above description, the third interlayer insulating film 43 has been described to be subjected to the CMP (Chemical Mechanical Polishing) process so that the surface thereof is almost completely flat. It is not limited. In the following, a description will be given of a mode that can achieve the same or a higher effect than the above mode.

  With the above-described embodiment, it is possible to form the pixel electrode 9a and the alignment film 16 flat, so that it is possible to prevent the alignment state of the liquid crystal layer 50 from being disturbed. There is a possibility that such a problem will occur.

  That is, in the electro-optical device as in the present embodiment, generally, in order to prevent deterioration of the electro-optical material due to application of a DC voltage, and to prevent crosstalk and flicker in a display image, the polarity of the voltage applied to each pixel electrode 9a. In some cases, an inversion driving method of inverting the data according to a predetermined rule is employed. More specifically, the so-called “1H inversion driving method” will be described as follows.

  First, as shown in FIG. 11A, during the period of displaying the image signal of the n-th (where n is a natural number) field or frame, the liquid crystal drive voltage indicated by + or-for each pixel electrode 9a. The polarity is not inverted, and the pixel electrodes 9a are driven with the same polarity for each row. Thereafter, as shown in FIG. 11B, when displaying the image signal of the (n + 1) th field or one frame, the voltage polarity of the liquid crystal driving voltage in each pixel electrode 9a is inverted, and the (n + 1) th field or one frame of the one frame is displayed. During the period of displaying the image signal, the polarity of the liquid crystal drive voltage indicated by + or-is not inverted for each pixel electrode 9a, and the pixel electrodes 9a are driven with the same polarity for each row. Then, the states shown in FIGS. 11A and 11B are repeated at a cycle of one field or one frame. This is the driving by the 1H inversion driving method. As a result, image display with reduced crosstalk and flicker can be performed while avoiding deterioration of the liquid crystal due to the application of the DC voltage. Note that the 1H inversion driving method is advantageous in that there is almost no vertical crosstalk as compared with a 1S inversion driving method described later.

  However, as can be seen from FIGS. 11A and 11B, in the 1H inversion driving method, a horizontal electric field is generated between the pixel electrodes 9a adjacent in the vertical direction (Y direction) in the drawing. In these figures, the horizontal electric field generation region C1 is always near the gap between the pixel electrodes 9a adjacent to each other in the Y direction. When such a lateral electric field is applied, a vertical electric field (that is, an electric field in a direction perpendicular to the substrate surface) between the opposing pixel electrode and the counter electrode is applied to the electro-optical material. In addition, a malfunction of the electro-optical material such as a poor alignment of the liquid crystal occurs, and light leakage or the like occurs in this portion, resulting in a problem that a contrast ratio is reduced.

  On the other hand, it is possible to cover the region where the horizontal electric field is generated with the light-shielding film. In particular, such a horizontal electric field increases as the distance between adjacent pixel electrodes decreases due to the miniaturization of the pixel pitch. Therefore, these problems become more serious as the definition of the electro-optical device becomes higher. I will.

Therefore, in the present embodiment, the pixel electrodes 9a vertically adjacent to each other in FIG. 11 (that is, the pixel electrodes 9a adjacent to each other to which a potential of the opposite polarity is applied) with respect to the third interlayer insulating film 43. Forms a convex portion 430 extending in a stripe shape in the lateral direction.
According to the presence of the convex portion 430, it is possible to strengthen the vertical electric field near the edge of the pixel electrode 9a disposed on the convex portion 430 and to reduce the horizontal electric field. More specifically, as shown in FIGS. 12 and 13, the distance between the vicinity of the edge of the pixel electrode 9 a arranged on the convex portion 430 and the counter electrode 21 is reduced by the height of the convex portion 430. Therefore, in the horizontal electric field generation region C1 shown in FIG. 12, the vertical electric field between the pixel electrode 9a and the counter electrode 21 can be increased. In FIGS. 12 and 13, since the gap between the adjacent pixel electrodes 9a is constant, the magnitude of the lateral electric field that increases as the gap is reduced is also constant.

  Therefore, by making the vertical electric field more dominant in the horizontal electric field generation region C1 shown in FIG. 11, poor alignment of the liquid crystal due to the horizontal electric field can be prevented. Further, the presence of the convex portion 430 made of an insulating film weakens the strength of the lateral electric field, and reduces the liquid crystal portion receiving the lateral electric field by an amount corresponding to the replacement of the convex portion 430 where the lateral electric field exists. The effect on the liquid crystal layer 50 can be reduced.

In addition, such a convex part 430 is specifically formed as follows, for example.
Hereinafter, a specific mode for forming the convex portion 430 will be described with reference to FIGS. FIG. 14 is a perspective view of a data line and elements formed on the same layer as the data line in the electro-optical device according to the second embodiment. FIG. 15 is a perspective view of a data line and elements formed on the same layer as the data line. In these drawings, only the configuration for forming the convex portion 430 is illustrated, and all other components are not illustrated.

  Now, as to a specific mode for forming the protrusion 430, first, as shown in FIG. 14, the data line 6a and the relay for the shield layer formed in the electro-optical device according to the second embodiment described above. An embodiment using the layer 6a1 and the second relay layer 6a2 is conceivable. That is, as described with reference to FIG. 5, the data line 6a has a main line portion extending linearly in the Y direction in FIG. 5, and the relay layer 6a1 for the shield layer and the second relay layer 6a2 , From the data line 6a in the X direction in FIG. If the data line 6a, the relay layer 6a1 for the shield layer, and the second relay layer 6a2 are used, the surface of the fourth interlayer insulating film 44 as the base of the pixel electrode 9a may be formed due to the height of the data line 6a. The protrusion 430 can be naturally formed (see FIG. 14). In this case, it can be considered that the above-mentioned relay layer 6a1 for shield layer and the second relay layer 6a2 correspond to the "overhang portion" or the "convex pattern" in the present invention.

  Second, as shown in FIG. 15, a mode in which the shield layer 400 and the third relay layer 402 formed in the electro-optical device according to the above-described second embodiment are used is considered. That is, as described with reference to FIG. 5, the shield layer 400 is formed in a lattice shape, and the third relay layer 402 is formed as the same layer as the shield layer 400. If such a shield layer 400 and the third relay layer 402 are used, the protrusions 430 are naturally formed on the surface of the fourth interlayer insulating film 44 as a base of the pixel electrode 9a due to the height of the shield layer 400 and the third relay layer 402. (See FIG. 15). In this case, the “overhang portion” or the “convex pattern” according to the present invention exists in the shield layer 400 shown in FIG. 5 so as to bridge a portion extending in the Y direction. A portion extending in the X direction can be considered to correspond.

  In each of the above cases, it is more preferable that the surface of the data line 6a or the surface of the interlayer insulating film formed as a base of the shield layer 400 be subjected to an appropriate flattening process. This is because the height of the projection 430 can be strictly determined in this manner. In addition, the manner in which the protrusions are formed using the shield layer or the data lines as described above can be similarly applied to the first embodiment.

  Third, by modifying the structure of the lower layer of the pixel electrode 9a as described above, the third interlayer insulating film 43 as a base of the pixel electrode 9a (corresponding to the first embodiment) or the fourth layer. In addition to the configuration in which the convex portion 430 is provided on the surface of the interlayer insulating film 44, the convex portion 430 is formed directly on the surface of the third interlayer insulating film 43 or the surface of the fourth interlayer insulating film 44 in some cases. Alternatively, a configuration may be adopted in which a new film is formed and a patterning process is performed on the film to form the convex portion 430.

  The protruding portion 430 can be formed as described above, but it is preferable that the step formed by such a protruding portion 430 be made more gentle. In order to form this “gradual” convex portion, for example, after forming a steep convex portion, a flattening film is formed on the convex portion and the periphery thereof, and then the flattening film is removed. This can be realized by, for example, performing an etch-back step of retreating the surface of the projection exposed after the removal of the planarization film.

  By providing such a "slow" convex portion, the rubbing process for the alignment film 16 can be relatively easily performed and the rubbing process can be performed well without unevenness. Can be prevented beforehand. In this regard, if the angle of the surface of the convex portion changes steeply, a discontinuous surface is generated in the electro-optical material such as liquid crystal, and a malfunction of the electro-optical material such as a poor alignment of the liquid crystal occurs. It is very different.

  Further, the 1H inversion drive has been described above, but the present invention is not limited to such a drive system. For example, a 1S inversion driving method in which pixel electrodes in the same column are driven by a potential of the same polarity and the voltage polarity is reversed in a frame or field cycle for each column is also relatively easy to control, and a high-quality image display is achieved. Although used as a possible inversion drive method, the present invention is applicable to this. Further, a dot inversion driving method for inverting the voltage polarity applied to each pixel electrode between pixel electrodes adjacent to each other in both the column direction and the row direction has been developed. It goes without saying that it is possible to apply.

  In addition, as described above, in the form in which the convex portion 430 is provided, the possibility that the alignment defect of the liquid crystal occurs due to this is increased. Therefore, in some cases, the line width of the above-described upper light-shielding film or built-in light-shielding film, or the lower light-shielding film 11a may be slightly widened. In this way, it is possible to prevent light leakage or the like caused by the alignment defect caused by the protrusion 430 from affecting the image. However, since this measure is a countermeasure against the viewpoint of improving the aperture ratio, it is preferable to implement the measure after appropriately balancing it.

(Fifth Embodiment: Double-speed field inversion drive)
Hereinafter, a fifth embodiment will be described with reference to FIGS. 16 and 17.
Here, FIG. 16 is a timing chart regarding a scanning signal showing a conventional voltage application method for the pixel electrode 9a, and FIG. 17 is the same timing chart according to the fifth embodiment. The pixel unit described with reference to FIGS. 1 to 4 and the like is “driven” based on such a timing chart.

  The fifth embodiment has a feature in a method of driving the pixel electrode 9a. Particularly, when the surface of the interlayer insulating film below the pixel electrode 9a is flattened as in the present embodiment, a specific operation and effect is exhibited. To do.

  First, a method of applying a voltage to the pixel electrode 9a in the fifth embodiment will be briefly described with reference to a timing chart shown in FIG. As shown in this figure, the scanning lines 3a are sequentially applied with the scanning signals G1, G2,..., Gm from the one located on the first row to the one located on the last row ( (See FIG. 1). Here, "selection" means that the TFT 30 connected to the scanning line 3a is in a state where it can be energized. Then, during the period in which the scanning line 3a of each row is selected (one horizontal scanning period (1H)), the image signals S1, S2,..., Sn are sent to the TFT 30, and eventually to the pixel electrode 9a, via the data line 6a. (This point is not shown in FIG. 16). Accordingly, each pixel electrode 9a has a predetermined potential, and a predetermined potential difference is generated between the pixel electrode 9a and the potential of the counter electrode 21. That is, the liquid crystal layer 50 is charged with a predetermined charge.

  Incidentally, a period in which all the scanning lines 3a are selected from the first row to the last row is called one field period or one vertical scanning period (1F). In addition, in this driving method, the driving whose polarity is inverted is performed between the n-th field and the (n + 1) -th field (hereinafter, may be referred to as “1V inversion driving”. G1 ”).

  In the 1V inversion drive, unlike the 1H inversion drive described above, the adjacent pixel electrodes 9a are not driven by electric fields having different polarities. Therefore, a horizontal electric field is generated in principle. do not do. Therefore, even if the surface of the interlayer insulating film located below the pixel electrode 9a is flattened as in the present embodiment, the generation of the horizontal electric field is reduced in the same manner as in the above-described embodiment in which the protrusions and the like are provided. It is not necessary to pay special attention to the cause of the problem.

  However, when the 1V inversion drive as described above is adopted, the following problem occurs. That is, each time the polarity is inverted, that is, every vertical scanning period, there is a problem that flicker is generated on the image.

  Therefore, in such a case, it is preferable to perform the double-speed field inversion drive as shown in FIG. Here, the double-speed field inversion drive means that one field period is half (for example, if the conventional one is driven at 120 [Hz]), "half" is preferably 1/60 [ s] or less.) Therefore, assuming 1V inversion driving, the period of polarity inversion is halved compared to before. 17 and FIG. 16, it can be seen that the former has a shorter one horizontal scanning period (1H) and a shorter one vertical scanning period (1F) than the latter. Specifically, it is set to "1/2" as shown in the figure.

  By doing so, one vertical scanning period is shortened, that is, the screen with the positive polarity and the screen with the negative polarity are switched more quickly, and the above-mentioned flicker becomes less noticeable.

  As described above, according to the double-speed field inversion driving method, it is possible to display a higher quality image without flicker.

  Further, according to such a double-speed field inversion driving method, it is possible to relatively increase the potential holding characteristics of each pixel electrode 9a as compared with the driving method which does not use such a method. This is because the fact that the length of one field period is reduced by half means that the time required for each pixel electrode 9a to maintain a certain predetermined potential is reduced by half in the conventional case. . In this regard, in the present embodiment, since the high-performance storage capacitor 70 is provided for each pixel, it is not possible to prevent the voltage from attenuating during the field period. However, there is no doubt that the above-described effect of improving the relative potential holding characteristics is beneficial for displaying a higher quality image. This fifth embodiment is effective for the embodiments described above and below.

(Sixth embodiment: Modification of contact hole for electrical connection with pixel electrode)
Hereinafter, as a sixth embodiment of the present invention, FIG. 18 will be described with respect to matters relating to a modification of a contact hole for electrically connecting to the pixel electrode 9a in the electro-optical device according to the above-described first embodiment. It will be described with reference to FIG. Here, FIG. 18 is a view having the same meaning as FIG. 4, and a film made of titanium (hereinafter, referred to as “Ti film”) is formed on the inner surface of the contact hole for making electrical connection with the pixel electrode 9a. Is a cross-sectional view showing a characteristically different aspect. The electro-optical device according to the sixth embodiment has a configuration substantially similar to the configuration of the pixel portion of the electro-optical device according to the first embodiment. Therefore, hereinafter, the main description will be added only to the characteristic portions in the sixth embodiment, and the description of the remaining portions will be omitted or simplified as appropriate.

  In the sixth embodiment, as shown in FIG. 18, as compared with FIG. 4, the third relay layer 402 is not formed, and the electrical connection between the pixel electrode 9a and the first relay layer 71 is improved. There is a great difference in that a Ti film 891a is formed on the inner surface of the contact hole 891.

  More specifically, unlike the first embodiment, since the third relay layer 402 is not formed in the fourth layer, the electrical connection between the first relay layer 71 and the pixel electrode 9a is made by the second interlayer insulating layer. This is realized by a contact hole 891 formed through the film 42 and the third interlayer insulating film 43. A Ti film 891a is formed on the inner surface of the contact hole 891. The Ti film 891 only needs to contain at least titanium, and may contain the compound. For example, titanium nitride, silicon nitride, or the like may be used. ITO constituting the pixel electrode 9a is formed inside the contact hole 891 so as to cover the surface of the Ti film 891a.

  In the electro-optical device according to the sixth embodiment having such a configuration, the third relay layer 402 made of the aluminum film and the titanium nitride film is provided in the first embodiment, thereby reducing the risk of so-called electrolytic corrosion. Similarly, the pixel electrode 9a made of ITO comes in direct contact with the Ti film 891a, so that the danger of electrolytic corrosion can be avoided. Therefore, also in the sixth embodiment, it is possible to apply a voltage to the pixel electrode 9a or to maintain a good potential holding characteristic in the pixel electrode 9a.

Further, according to the above-described Ti film 891a, since the titanium has relatively excellent light-shielding performance, light leakage due to the contact hole 891 can be prevented. That is, the Ti film 891a absorbs light or the like, so that it is possible to block the progress of light that penetrates the driving portion of the contact hole. Thereby, there is almost no possibility that light leakage or the like may occur on the image.
Further, for the same reason, the light resistance of the TFT 30 or the semiconductor layer 1a thereof can be improved. Accordingly, it is possible to suppress the occurrence of light leakage current when light enters the semiconductor layer 1a, and to prevent the occurrence of flicker or the like on an image due to the light leakage current. As described above, in the electro-optical device according to the sixth embodiment, a higher quality image can be displayed.

  The configuration of the electro-optical device shown in FIG. 18 according to the sixth embodiment differs from the configuration of FIG. 4 described as the first embodiment and FIG. 6 described as the second embodiment in that the TFT array substrate 10 It can be said that this enriches the specific embodiment of the laminated structure above.

  That is, FIG. 18 according to the sixth embodiment can be said to have a simpler structure due to the omission of the second relay layer 402 and the resulting reduction in the number of contact holes as compared with FIGS. 4 and 6. In order to improve the aperture ratio, it is more advantageous in arranging various elements constituting the laminated structure so as to be confined in the light shielding region. However, in FIG. 4, as described above, there is an advantage that the cost can be reduced by shortening the contact holes 83, 85, and 89. In FIG. 6, the capacitance electrode 300 is configured as a part of the capacitance line. The advantage that cost reduction can be achieved by being possible is obtained. That is, in various aspects of the electro-optical device disclosed in the present embodiment, not only the aperture ratio can be improved, but also other accompanying effects can be individually exhibited. It cannot be determined in a straightforward manner. As described above, the sixth embodiment, together with the above-described first embodiment and the like, provides one of the optimal modes that can be considered when embodying the present invention, and at the same time, provides the present invention. This is to enrich the specific embodiment of such a laminated structure.

(Overall configuration of electro-optical device)
The overall configuration of the electro-optical device according to each embodiment configured as described above will be described with reference to FIGS. 19 is a plan view of the TFT array substrate together with the components formed thereon as viewed from the counter substrate 20, and FIG. 20 is a cross-sectional view taken along the line HH 'of FIG.

  19 and 20, in the electro-optical device according to the present embodiment, the TFT array substrate 10 and the opposing substrate 20 are arranged to face each other. A liquid crystal 50 is sealed between the TFT array substrate 10 and the opposing substrate 20, and the TFT array substrate 10 and the opposing substrate 20 are formed by a sealing material provided in a sealing area located around the image display area 10a. They are mutually bonded by 52.

  The sealing material 52 is made of, for example, an ultraviolet curable resin, a thermosetting resin, or the like, and is hardened by ultraviolet light, heating, or the like in order to bond the two substrates together. In the sealing material 52, if the liquid crystal device according to the present embodiment is a small-sized liquid crystal device such as a projector, which performs enlarged display, the distance between the two substrates (gap between the substrates) is set to a predetermined value. And a gap material (spacer) such as glass fiber or glass beads. Alternatively, such a gap material may be included in the liquid crystal layer 50 if the liquid crystal device is a large-sized liquid crystal device such as a liquid crystal display or a liquid crystal television that displays images at the same magnification.

  In a region outside the sealing material 52, a data line driving circuit 101 for driving the data line 6 a by supplying an image signal to the data line 6 a at a predetermined timing and an external circuit connection terminal 102 are connected to one side of the TFT array substrate 10. The scanning line driving circuit 104 that drives the scanning line 3a by supplying a scanning signal to the scanning line 3a at a predetermined timing is provided along two sides adjacent to this one side. I have.

  If the delay of the scanning signal supplied to the scanning line 3a does not matter, it goes without saying that the scanning line driving circuit 104 may be provided on only one side. Further, the data line driving circuits 101 may be arranged on both sides along the side of the image display area 10a.

On one remaining side of the TFT array substrate 10, a plurality of wirings 105 for connecting between the scanning line driving circuits 104 provided on both sides of the image display area 10a are provided.
In at least one of the corners of the counter substrate 20, a conductive material 106 for electrically connecting the TFT array substrate 10 and the counter substrate 20 is provided.

  In FIG. 20, on the TFT array substrate 10, an alignment film is formed on the pixel electrode 9a after the pixel switching TFT and the wiring such as the scanning line and the data line are formed. On the other hand, on the counter substrate 20, an alignment film is formed on the uppermost layer in addition to the counter electrode 21. The liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several kinds of nematic liquid crystals are mixed, and takes a predetermined alignment state between the pair of alignment films.

  Note that, on the TFT array substrate 10, in addition to the data line driving circuit 101, the scanning line driving circuit 104, etc., a sampling circuit for applying an image signal to the plurality of data lines 6a at a predetermined timing, a plurality of data lines 6a, a precharge circuit for supplying a precharge signal of a predetermined voltage level prior to the image signal, an inspection circuit for inspecting the quality, defects, and the like of the electro-optical device during manufacturing or shipping are formed. Is also good.

(Electronics)
Next, an overall configuration, particularly an optical configuration, of an embodiment of a projection color display device as an example of an electronic apparatus using the electro-optical device described above in detail as a light valve will be described. FIG. 21 is a schematic cross-sectional view of the projection type color display device.

  In FIG. 21, a liquid crystal projector 1100, which is an example of a projection type color display device according to the present embodiment, prepares three liquid crystal modules each including a liquid crystal device in which a driving circuit is mounted on a TFT array substrate, and each of them has a light valve for RGB. The projector is configured as a projector used as 100R, 100G, and 100B. In the liquid crystal projector 1100, when the projection light is emitted from a lamp unit 1102 of a white light source such as a metal halide lamp, three mirrors 1106 and two dichroic mirrors 1108 light components R, G, and R corresponding to the three primary colors of RGB. B, and are led to light valves 100R, 100G, and 100B corresponding to each color. In this case, in particular, the B light is guided through a relay lens system 1121 including an entrance lens 1122, a relay lens 1123, and an exit lens 1124 in order to prevent light loss due to a long optical path. The light components corresponding to the three primary colors modulated by the light valves 100R, 100G, and 100B are combined again by the dichroic prism 1112, and then projected as a color image on the screen 1120 via the projection lens 1114.

  The present invention is not limited to the above-described embodiment, and can be appropriately modified within the scope not departing from the gist of the invention or the idea read from the entirety of the claims and the specification, and an electro-optical device with such a modification. And electronic devices are also included in the technical scope of the present invention. As the electro-optical device, the present invention can be applied to an electrophoretic device, an EL (electroluminescence) device, a device using an electron-emitting device (Field Emission Display, Surface-Conduction Electron-Emitter Display, etc.).

FIG. 2 is a circuit diagram showing an equivalent circuit such as various elements and wiring provided in a plurality of pixels in a matrix forming an image display area in the electro-optical device according to the first embodiment of the present invention. FIG. 2 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed in the electro-optical device according to the first embodiment of the present invention. It is the top view which extracted only the principal part in FIG. It is AA 'sectional drawing of FIG. FIG. 10 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed in the electro-optical device according to the second embodiment of the present invention. It is AA 'sectional drawing of FIG. FIG. 4 is a plan view showing a manner of forming a nitride film (on data lines and outside an image display area). FIG. 3 is a sectional view taken along line BB ′ of FIG. 2. FIG. 3 is a perspective view showing a three-dimensional configuration of a storage capacitor corresponding to one pixel. FIG. 10 is a perspective view illustrating a configuration of a storage capacitor serving as a comparative example with respect to FIG. 9. FIG. 4 is an explanatory diagram for describing a generation mechanism of a horizontal electric field. FIG. 5 is a view having the same meaning as in FIG. 4, which is in a form provided with a convex portion for preventing generation of a lateral electric field. FIG. 3 is a cross-sectional view taken along the line GG ′ of FIG. 2, showing a form in which a convex portion for preventing generation of a lateral electric field is provided. FIG. 14 is a perspective view showing a specific mode (a mode using a data line, a relay layer for a shield layer, and a second relay layer) for forming the protrusions shown in FIGS. 12 and 13 according to a modification of the second embodiment. is there. FIG. 14 is a perspective view showing a specific mode (a mode using a shield layer and a third relay layer) for forming the protrusions shown in FIGS. 12 and 13 according to a modification of the second embodiment. 6 is a timing chart showing a conventional voltage application method for a pixel electrode. 15 is a timing chart illustrating a method for applying a voltage to a pixel electrode according to a fifth embodiment of the present invention. FIG. 13 is a view having the same concept as FIG. 4 according to the sixth embodiment of the present invention, in which a Ti film is formed on an inner surface of a contact hole for electrical connection with a pixel electrode. FIG. FIG. 2 is a plan view of the TFT array substrate in the electro-optical device according to the embodiment of the present invention, together with the components formed thereon, viewed from the counter substrate side. It is HH 'sectional drawing of FIG. 1 is a schematic cross-sectional view illustrating a color liquid crystal projector as an example of a projection type color display device that is an embodiment of an electronic apparatus according to the invention.

Explanation of reference numerals

1a semiconductor layer 3a scanning line 6a data line 6a1 shield layer relay layer 6a2 second relay layer 9a pixel electrode 10 TFT array substrate 11a lower light-shielding film 16 alignment film 20 counter substrate 30 TFT
Reference numeral 43: third interlayer insulating film 430, convex portion 50, liquid crystal layer 70, storage capacitor 71, first relay layer 71 DFBA, convex portion 75, dielectric film 75a, silicon oxide film 75b, silicon nitride films 81, 82, 83 , 85, 87, 89, 891 contact hole 891a Ti film 300 capacitor electrode 400, 404 shield layer 402 second relay layer

Claims (21)

A data line extending in a first direction, a scanning line extending in a second direction intersecting the data line, and an intersection area of the data line and the scanning line are arranged on the substrate. An electro-optical device in which a pixel electrode and a thin film transistor are provided as part of a stacked structure,
Further on the substrate,
A storage capacitor formed above the semiconductor layer of the thin film transistor and below the pixel electrode, and electrically connected to a pixel potential;
An upper light-shielding film disposed between the data line and the pixel electrode, and provided as a part of the laminated structure;
The upper light-shielding film defines at least a corner of the pixel opening area,
The electro-optical device according to claim 1, wherein the scanning line, the data line, and the storage capacitor are formed in a light shielding area.   A light-blocking relay film formed of the same film as the upper light-shielding film and electrically connecting the thin film transistor and the pixel electrode is provided, and the pixel opening region is defined by the light-shielding film and the relay film. The electro-optical device according to claim 1, wherein:   The electro-optical device according to claim 2, wherein the upper light-shielding film is connected to one electrode forming the storage capacitor. An interlayer insulating film disposed as a base of the pixel electrode further forms a part of the laminated structure,
A contact hole for electrical connection with the pixel electrode is formed in the interlayer insulating film,
4. The electro-optical device according to claim 1, wherein a film containing the titanium or a compound thereof is formed on at least an inner surface of the contact hole.   2. The electro-optical device according to claim 1, wherein the data line is formed as the same film as one of a pair of electrodes forming the storage capacitor.   2. The electro-optic device according to claim 1, wherein a relay layer for electrically connecting at least one of the pair of electrodes constituting the storage capacitor and the pixel electrode is further provided as a part of the laminated structure. apparatus.   The electro-optical device according to claim 6, wherein the relay layer comprises an aluminum film and a nitride film.   The electro-optical device according to claim 1, wherein at least one of the pair of electrodes forming the scanning line, the data line, and the storage capacitor is made of a light-shielding material. One of a pair of electrodes constituting the storage capacitor constitutes a part of a capacitance line formed along the second direction,
2. The electro-optical device according to claim 1, wherein the capacitance line is formed of a multilayer film including a low resistance film.   10. The electro-optical device according to claim 9, wherein the capacitance line has the low-resistance film in an upper layer and a film made of a light-absorbing material in a lower layer.   The electro-optical device according to claim 9, wherein the low resistance film is made of aluminum or an alloy of aluminum. The storage capacity is:
A first portion comprising the dielectric film and an upper electrode and a lower electrode sandwiching the dielectric film, the first portion being stacked along a plane parallel to the surface of the substrate, and rising to the surface of the substrate The electro-optical device according to claim 1, wherein the electro-optical device includes a second portion stacked along a plane, so that a cross-sectional shape thereof includes a convex shape.   13. The electro-optical device according to claim 12, wherein the convex shape of the storage capacitor is formed along at least one of the scanning line and the data line.   2. The storage capacitor according to claim 1, wherein the storage film includes the dielectric film, an upper electrode and a lower electrode sandwiching the dielectric film, and the dielectric film includes a silicon nitride film and a silicon oxide film. An electro-optical device according to claim 1. An interlayer insulating film disposed as a base of the pixel electrode further forms a part of the laminated structure,
The electro-optical device according to claim 1, wherein a surface of the interlayer insulating film is subjected to a planarization process. A plurality of the pixel electrodes are planarly arranged, and a first pixel electrode group for inversion driving at a first period and an inversion driving at a second period complementary to the first period. A second pixel electrode group for
At least one of the data line and the shield layer includes a main line portion extending above the scanning line and intersecting the scanning line, and a projecting portion extending from the main line portion along the scanning line,
Comprising a counter electrode facing the plurality of pixel electrodes on a counter substrate disposed to face the substrate;
On the base surface of the pixel electrode on the substrate, a projection is formed in a region serving as a gap between pixel electrodes adjacent to each other across the scanning line when viewed in a plan view according to the presence of the overhanging portion. The electro-optical device according to claim 15, wherein: A plurality of the pixel electrodes are planarly arranged, and a first pixel electrode group for inversion driving at a first period and an inversion driving at a second period complementary to the first period. A second pixel electrode group for
A counter electrode facing the plurality of pixel electrodes on a counter substrate disposed to face the substrate;
A projection formed in a region serving as a gap between pixel electrodes that are adjacent to each other when viewed two-dimensionally,
The convex portion is formed by removing a flattening film once formed on the convex portion by etching and retreating the surface of the convex portion exposed after the removal, and is configured by a convex portion having a gentle surface step. The electro-optical device according to claim 15, wherein: A plurality of the pixel electrodes are planarly arranged, and a first pixel electrode group for inversion driving at a first period and an inversion driving at a second period complementary to the first period. A second pixel electrode group for
A counter electrode facing the plurality of pixel electrodes on a counter substrate disposed to face the substrate;
In order to form a convex portion in a region serving as a gap between pixel electrodes adjacent to each other in plan view, a convex pattern formed as the same layer as at least one of the data line and the shield layer under the pixel electrode. The electro-optical device according to claim 15, comprising: A data line extending in a first direction, a scanning line extending in a second direction intersecting the data line, and an intersection area of the data line and the scanning line are arranged on the substrate. An electro-optical device in which a pixel electrode and a thin film transistor are provided as part of a stacked structure,
Further on the substrate,
A storage capacitor formed above the semiconductor layer of the thin film transistor and below the pixel electrode, and electrically connected to a pixel potential;
A shield layer disposed between the data line and the pixel electrode;
A lower light-shielding film formed in a layer lower than the semiconductor layer of the thin film transistor, and provided as a part of the laminated structure;
The lower light-shielding film defines at least a corner of the pixel opening area,
The electro-optical device according to claim 1, wherein the scanning line, the data line, the storage capacitor, and the shield layer are formed in a light shielding region.   20. The electro-optical device according to claim 19, wherein the shield layer has a light shielding property. An electronic apparatus comprising the electro-optical device according to any one of claims 1 to 20.

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