JP2004158845A - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP2004158845A
JP2004158845A JP2003355837A JP2003355837A JP2004158845A JP 2004158845 A JP2004158845 A JP 2004158845A JP 2003355837 A JP2003355837 A JP 2003355837A JP 2003355837 A JP2003355837 A JP 2003355837A JP 2004158845 A JP2004158845 A JP 2004158845A
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JP
Japan
Prior art keywords
laser
semiconductor film
film
laser beam
crystalline semiconductor
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Withdrawn
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JP2003355837A
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English (en)
Japanese (ja)
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JP2004158845A5 (https=
Inventor
Shinji Maekawa
慎志 前川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2003355837A priority Critical patent/JP2004158845A/ja
Publication of JP2004158845A publication Critical patent/JP2004158845A/ja
Publication of JP2004158845A5 publication Critical patent/JP2004158845A5/ja
Withdrawn legal-status Critical Current

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  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2003355837A 2002-10-17 2003-10-16 半導体装置の作製方法 Withdrawn JP2004158845A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003355837A JP2004158845A (ja) 2002-10-17 2003-10-16 半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002303659 2002-10-17
JP2003355837A JP2004158845A (ja) 2002-10-17 2003-10-16 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2004158845A true JP2004158845A (ja) 2004-06-03
JP2004158845A5 JP2004158845A5 (https=) 2006-11-09

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ID=32827975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003355837A Withdrawn JP2004158845A (ja) 2002-10-17 2003-10-16 半導体装置の作製方法

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JP (1) JP2004158845A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006093212A (ja) * 2004-09-21 2006-04-06 Sumitomo Heavy Ind Ltd 多結晶層の形成方法、半導体装置の製造方法、及び半導体装置
JP2008153261A (ja) * 2006-12-14 2008-07-03 Mitsubishi Electric Corp レーザアニール装置
WO2020208774A1 (ja) * 2019-04-11 2020-10-15 シャープ株式会社 発光素子および表示装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006093212A (ja) * 2004-09-21 2006-04-06 Sumitomo Heavy Ind Ltd 多結晶層の形成方法、半導体装置の製造方法、及び半導体装置
JP2008153261A (ja) * 2006-12-14 2008-07-03 Mitsubishi Electric Corp レーザアニール装置
WO2020208774A1 (ja) * 2019-04-11 2020-10-15 シャープ株式会社 発光素子および表示装置

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