JP2004146823A5 - - Google Patents

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Publication number
JP2004146823A5
JP2004146823A5 JP2003345276A JP2003345276A JP2004146823A5 JP 2004146823 A5 JP2004146823 A5 JP 2004146823A5 JP 2003345276 A JP2003345276 A JP 2003345276A JP 2003345276 A JP2003345276 A JP 2003345276A JP 2004146823 A5 JP2004146823 A5 JP 2004146823A5
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JP
Japan
Prior art keywords
laser
scanning
laser beam
irradiated
laser light
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Application number
JP2003345276A
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English (en)
Japanese (ja)
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JP2004146823A (ja
JP4498716B2 (ja
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Priority to JP2003345276A priority Critical patent/JP4498716B2/ja
Priority claimed from JP2003345276A external-priority patent/JP4498716B2/ja
Publication of JP2004146823A publication Critical patent/JP2004146823A/ja
Publication of JP2004146823A5 publication Critical patent/JP2004146823A5/ja
Application granted granted Critical
Publication of JP4498716B2 publication Critical patent/JP4498716B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003345276A 2002-10-03 2003-10-03 レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法 Expired - Fee Related JP4498716B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003345276A JP4498716B2 (ja) 2002-10-03 2003-10-03 レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002291545 2002-10-03
JP2003345276A JP4498716B2 (ja) 2002-10-03 2003-10-03 レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2004146823A JP2004146823A (ja) 2004-05-20
JP2004146823A5 true JP2004146823A5 (fr) 2006-11-16
JP4498716B2 JP4498716B2 (ja) 2010-07-07

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ID=32473426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003345276A Expired - Fee Related JP4498716B2 (ja) 2002-10-03 2003-10-03 レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法

Country Status (1)

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JP (1) JP4498716B2 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7569166B2 (en) 2003-06-26 2009-08-04 Sekisui Chemical Co., Ltd. Binder resin for coating paste
WO2007069516A1 (fr) 2005-12-16 2007-06-21 Semiconductor Energy Laboratory Co., Ltd. Appareil et procede d'irradiation par laser, et procede de fabrication de dispositif a semiconducteurs
JP5500573B2 (ja) * 2009-05-19 2014-05-21 株式会社日本製鋼所 半導体不純物の活性化方法
CN102290342B (zh) * 2011-09-05 2013-07-03 清华大学 一种采用六边形束斑的激光扫描退火方法
SG10201503478UA (en) * 2012-06-11 2015-06-29 Ultratech Inc Laser annealing systems and methods with ultra-short dwell times
ES2609481T3 (es) 2012-07-04 2017-04-20 Saint-Gobain Glass France Dispositivo y procedimiento para el procesamiento por láser de sustratos de gran superficie utilizando al menos dos puentes
JP6665624B2 (ja) * 2015-03-27 2020-03-13 日本製鉄株式会社 試験装置およびそれを備えた電子顕微鏡
CN111863342B (zh) * 2019-04-28 2021-08-27 上海微电子装备（集团）股份有限公司 一种ito退火工艺
JPWO2021256434A1 (fr) * 2020-06-18 2021-12-23

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0795538B2 (ja) * 1986-05-02 1995-10-11 旭硝子株式会社 レ−ザ−アニ−ル装置
JP2001326363A (ja) * 2000-03-08 2001-11-22 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法

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