JP2004134785A5 - - Google Patents

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Publication number
JP2004134785A5
JP2004134785A5 JP2003325322A JP2003325322A JP2004134785A5 JP 2004134785 A5 JP2004134785 A5 JP 2004134785A5 JP 2003325322 A JP2003325322 A JP 2003325322A JP 2003325322 A JP2003325322 A JP 2003325322A JP 2004134785 A5 JP2004134785 A5 JP 2004134785A5
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JP
Japan
Prior art keywords
laser
short side
irradiated surface
semiconductor device
manufacturing
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Withdrawn
Application number
JP2003325322A
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English (en)
Japanese (ja)
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JP2004134785A (ja
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Priority to JP2003325322A priority Critical patent/JP2004134785A/ja
Priority claimed from JP2003325322A external-priority patent/JP2004134785A/ja
Publication of JP2004134785A publication Critical patent/JP2004134785A/ja
Publication of JP2004134785A5 publication Critical patent/JP2004134785A5/ja
Withdrawn legal-status Critical Current

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JP2003325322A 2002-09-19 2003-09-17 ビームホモジナイザおよびレーザ照射装置、並びに半導体装置の作製方法 Withdrawn JP2004134785A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003325322A JP2004134785A (ja) 2002-09-19 2003-09-17 ビームホモジナイザおよびレーザ照射装置、並びに半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002272812 2002-09-19
JP2003325322A JP2004134785A (ja) 2002-09-19 2003-09-17 ビームホモジナイザおよびレーザ照射装置、並びに半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2004134785A JP2004134785A (ja) 2004-04-30
JP2004134785A5 true JP2004134785A5 (enExample) 2006-11-02

Family

ID=32301716

Family Applications (1)

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JP2003325322A Withdrawn JP2004134785A (ja) 2002-09-19 2003-09-17 ビームホモジナイザおよびレーザ照射装置、並びに半導体装置の作製方法

Country Status (1)

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JP (1) JP2004134785A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7387954B2 (en) 2004-10-04 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
WO2006046495A1 (en) 2004-10-27 2006-05-04 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, and laser irradiation method, laser irradiation apparatus, and laser annealing method of non-single crystalline semiconductor film using the same
US8237085B2 (en) 2006-11-17 2012-08-07 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and laser irradiation method
CN119703340B (zh) * 2024-12-30 2025-10-10 长沙麓邦光电科技有限公司 一种高功率超快激光整形方法、设备、介质及产品

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0727993A (ja) * 1993-07-07 1995-01-31 Matsushita Electric Ind Co Ltd 光ビーム均一化光学系
DE19520187C1 (de) * 1995-06-01 1996-09-12 Microlas Lasersystem Gmbh Optik zum Herstellen einer scharfen Beleuchtungslinie aus einem Laserstrahl
JPH08338962A (ja) * 1995-06-13 1996-12-24 Toshiba Corp ビームホモジナイザ及びレーザ加工装置
JP3917231B2 (ja) * 1996-02-06 2007-05-23 株式会社半導体エネルギー研究所 レーザー照射装置およびレーザー照射方法
JPH09234579A (ja) * 1996-02-28 1997-09-09 Semiconductor Energy Lab Co Ltd レーザー照射装置
JPH11212021A (ja) * 1998-01-27 1999-08-06 Toshiba Corp レーザ光照射装置
JP3562389B2 (ja) * 1999-06-25 2004-09-08 三菱電機株式会社 レーザ熱処理装置
JP2002141302A (ja) * 2000-11-02 2002-05-17 Mitsubishi Electric Corp レーザアニーリング用レーザ光学系とこれを用いたレーザアニーリング装置

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