JP2004134785A - ビームホモジナイザおよびレーザ照射装置、並びに半導体装置の作製方法 - Google Patents

ビームホモジナイザおよびレーザ照射装置、並びに半導体装置の作製方法 Download PDF

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JP2004134785A
JP2004134785A JP2003325322A JP2003325322A JP2004134785A JP 2004134785 A JP2004134785 A JP 2004134785A JP 2003325322 A JP2003325322 A JP 2003325322A JP 2003325322 A JP2003325322 A JP 2003325322A JP 2004134785 A JP2004134785 A JP 2004134785A
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laser
rectangular
irradiated
beam spot
side direction
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JP2003325322A
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JP2004134785A5 (enExample
Inventor
Koichiro Tanaka
田中　幸一郎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2003325322A 2002-09-19 2003-09-17 ビームホモジナイザおよびレーザ照射装置、並びに半導体装置の作製方法 Withdrawn JP2004134785A (ja)

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JP2003325322A JP2004134785A (ja) 2002-09-19 2003-09-17 ビームホモジナイザおよびレーザ照射装置、並びに半導体装置の作製方法

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JP2002272812 2002-09-19
JP2003325322A JP2004134785A (ja) 2002-09-19 2003-09-17 ビームホモジナイザおよびレーザ照射装置、並びに半導体装置の作製方法

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JP2004134785A5 JP2004134785A5 (enExample) 2006-11-02

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006046495A1 (en) 2004-10-27 2006-05-04 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, and laser irradiation method, laser irradiation apparatus, and laser annealing method of non-single crystalline semiconductor film using the same
US7387954B2 (en) 2004-10-04 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
US8237085B2 (en) 2006-11-17 2012-08-07 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and laser irradiation method
CN119703340A (zh) * 2024-12-30 2025-03-28 长沙麓邦光电科技有限公司 一种高功率超快激光整形方法、设备、介质及产品

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0727993A (ja) * 1993-07-07 1995-01-31 Matsushita Electric Ind Co Ltd 光ビーム均一化光学系
JPH08327942A (ja) * 1995-06-01 1996-12-13 Microlas Lasersyst Gmbh レーザビームから鮮鋭な照射線を生成する光学装置
JPH08338962A (ja) * 1995-06-13 1996-12-24 Toshiba Corp ビームホモジナイザ及びレーザ加工装置
JPH09234579A (ja) * 1996-02-28 1997-09-09 Semiconductor Energy Lab Co Ltd レーザー照射装置
JPH09275081A (ja) * 1996-02-06 1997-10-21 Semiconductor Energy Lab Co Ltd レーザー照射装置及びレーザー照射方法
JPH11212021A (ja) * 1998-01-27 1999-08-06 Toshiba Corp レーザ光照射装置
JP2001007045A (ja) * 1999-06-25 2001-01-12 Mitsubishi Electric Corp レーザ熱処理用光学系およびレーザ熱処理装置
JP2002141302A (ja) * 2000-11-02 2002-05-17 Mitsubishi Electric Corp レーザアニーリング用レーザ光学系とこれを用いたレーザアニーリング装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0727993A (ja) * 1993-07-07 1995-01-31 Matsushita Electric Ind Co Ltd 光ビーム均一化光学系
JPH08327942A (ja) * 1995-06-01 1996-12-13 Microlas Lasersyst Gmbh レーザビームから鮮鋭な照射線を生成する光学装置
JPH08338962A (ja) * 1995-06-13 1996-12-24 Toshiba Corp ビームホモジナイザ及びレーザ加工装置
JPH09275081A (ja) * 1996-02-06 1997-10-21 Semiconductor Energy Lab Co Ltd レーザー照射装置及びレーザー照射方法
JPH09234579A (ja) * 1996-02-28 1997-09-09 Semiconductor Energy Lab Co Ltd レーザー照射装置
JPH11212021A (ja) * 1998-01-27 1999-08-06 Toshiba Corp レーザ光照射装置
JP2001007045A (ja) * 1999-06-25 2001-01-12 Mitsubishi Electric Corp レーザ熱処理用光学系およびレーザ熱処理装置
JP2002141302A (ja) * 2000-11-02 2002-05-17 Mitsubishi Electric Corp レーザアニーリング用レーザ光学系とこれを用いたレーザアニーリング装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7387954B2 (en) 2004-10-04 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
US7916987B2 (en) 2004-10-04 2011-03-29 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
US8326102B2 (en) 2004-10-04 2012-12-04 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
US8670641B2 (en) 2004-10-04 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
WO2006046495A1 (en) 2004-10-27 2006-05-04 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, and laser irradiation method, laser irradiation apparatus, and laser annealing method of non-single crystalline semiconductor film using the same
US7664365B2 (en) 2004-10-27 2010-02-16 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, and laser irradiation method, laser irradiation apparatus, and laser annealing method of non-single crystalline semiconductor film using the same
US8237085B2 (en) 2006-11-17 2012-08-07 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and laser irradiation method
CN119703340A (zh) * 2024-12-30 2025-03-28 长沙麓邦光电科技有限公司 一种高功率超快激光整形方法、设备、介质及产品

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