JP2004134785A - ビームホモジナイザおよびレーザ照射装置、並びに半導体装置の作製方法 - Google Patents
ビームホモジナイザおよびレーザ照射装置、並びに半導体装置の作製方法 Download PDFInfo
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- JP2004134785A JP2004134785A JP2003325322A JP2003325322A JP2004134785A JP 2004134785 A JP2004134785 A JP 2004134785A JP 2003325322 A JP2003325322 A JP 2003325322A JP 2003325322 A JP2003325322 A JP 2003325322A JP 2004134785 A JP2004134785 A JP 2004134785A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000004065 semiconductor Substances 0.000 title claims description 62
- 238000000034 method Methods 0.000 title claims description 26
- 230000003287 optical effect Effects 0.000 claims abstract description 114
- 239000000758 substrate Substances 0.000 claims description 29
- 239000013078 crystal Substances 0.000 claims description 24
- 238000005224 laser annealing Methods 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 238000003491 array Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 62
- 238000010586 diagram Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 238000005401 electroluminescence Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 230000001427 coherent effect Effects 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000000644 propagated effect Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003325322A JP2004134785A (ja) | 2002-09-19 | 2003-09-17 | ビームホモジナイザおよびレーザ照射装置、並びに半導体装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002272812 | 2002-09-19 | ||
| JP2003325322A JP2004134785A (ja) | 2002-09-19 | 2003-09-17 | ビームホモジナイザおよびレーザ照射装置、並びに半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004134785A true JP2004134785A (ja) | 2004-04-30 |
| JP2004134785A5 JP2004134785A5 (enExample) | 2006-11-02 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003325322A Withdrawn JP2004134785A (ja) | 2002-09-19 | 2003-09-17 | ビームホモジナイザおよびレーザ照射装置、並びに半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004134785A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006046495A1 (en) | 2004-10-27 | 2006-05-04 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, and laser irradiation method, laser irradiation apparatus, and laser annealing method of non-single crystalline semiconductor film using the same |
| US7387954B2 (en) | 2004-10-04 | 2008-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device |
| US8237085B2 (en) | 2006-11-17 | 2012-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus, and laser irradiation method |
| CN119703340A (zh) * | 2024-12-30 | 2025-03-28 | 长沙麓邦光电科技有限公司 | 一种高功率超快激光整形方法、设备、介质及产品 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0727993A (ja) * | 1993-07-07 | 1995-01-31 | Matsushita Electric Ind Co Ltd | 光ビーム均一化光学系 |
| JPH08327942A (ja) * | 1995-06-01 | 1996-12-13 | Microlas Lasersyst Gmbh | レーザビームから鮮鋭な照射線を生成する光学装置 |
| JPH08338962A (ja) * | 1995-06-13 | 1996-12-24 | Toshiba Corp | ビームホモジナイザ及びレーザ加工装置 |
| JPH09234579A (ja) * | 1996-02-28 | 1997-09-09 | Semiconductor Energy Lab Co Ltd | レーザー照射装置 |
| JPH09275081A (ja) * | 1996-02-06 | 1997-10-21 | Semiconductor Energy Lab Co Ltd | レーザー照射装置及びレーザー照射方法 |
| JPH11212021A (ja) * | 1998-01-27 | 1999-08-06 | Toshiba Corp | レーザ光照射装置 |
| JP2001007045A (ja) * | 1999-06-25 | 2001-01-12 | Mitsubishi Electric Corp | レーザ熱処理用光学系およびレーザ熱処理装置 |
| JP2002141302A (ja) * | 2000-11-02 | 2002-05-17 | Mitsubishi Electric Corp | レーザアニーリング用レーザ光学系とこれを用いたレーザアニーリング装置 |
-
2003
- 2003-09-17 JP JP2003325322A patent/JP2004134785A/ja not_active Withdrawn
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0727993A (ja) * | 1993-07-07 | 1995-01-31 | Matsushita Electric Ind Co Ltd | 光ビーム均一化光学系 |
| JPH08327942A (ja) * | 1995-06-01 | 1996-12-13 | Microlas Lasersyst Gmbh | レーザビームから鮮鋭な照射線を生成する光学装置 |
| JPH08338962A (ja) * | 1995-06-13 | 1996-12-24 | Toshiba Corp | ビームホモジナイザ及びレーザ加工装置 |
| JPH09275081A (ja) * | 1996-02-06 | 1997-10-21 | Semiconductor Energy Lab Co Ltd | レーザー照射装置及びレーザー照射方法 |
| JPH09234579A (ja) * | 1996-02-28 | 1997-09-09 | Semiconductor Energy Lab Co Ltd | レーザー照射装置 |
| JPH11212021A (ja) * | 1998-01-27 | 1999-08-06 | Toshiba Corp | レーザ光照射装置 |
| JP2001007045A (ja) * | 1999-06-25 | 2001-01-12 | Mitsubishi Electric Corp | レーザ熱処理用光学系およびレーザ熱処理装置 |
| JP2002141302A (ja) * | 2000-11-02 | 2002-05-17 | Mitsubishi Electric Corp | レーザアニーリング用レーザ光学系とこれを用いたレーザアニーリング装置 |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7387954B2 (en) | 2004-10-04 | 2008-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device |
| US7916987B2 (en) | 2004-10-04 | 2011-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device |
| US8326102B2 (en) | 2004-10-04 | 2012-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device |
| US8670641B2 (en) | 2004-10-04 | 2014-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device |
| WO2006046495A1 (en) | 2004-10-27 | 2006-05-04 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, and laser irradiation method, laser irradiation apparatus, and laser annealing method of non-single crystalline semiconductor film using the same |
| US7664365B2 (en) | 2004-10-27 | 2010-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, and laser irradiation method, laser irradiation apparatus, and laser annealing method of non-single crystalline semiconductor film using the same |
| US8237085B2 (en) | 2006-11-17 | 2012-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus, and laser irradiation method |
| CN119703340A (zh) * | 2024-12-30 | 2025-03-28 | 长沙麓邦光电科技有限公司 | 一种高功率超快激光整形方法、设备、介质及产品 |
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