JP2004134568A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP2004134568A
JP2004134568A JP2002297365A JP2002297365A JP2004134568A JP 2004134568 A JP2004134568 A JP 2004134568A JP 2002297365 A JP2002297365 A JP 2002297365A JP 2002297365 A JP2002297365 A JP 2002297365A JP 2004134568 A JP2004134568 A JP 2004134568A
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JP
Japan
Prior art keywords
insulating film
voltage mos
breakdown voltage
gate insulating
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002297365A
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English (en)
Japanese (ja)
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JP2004134568A5 (enExample
Inventor
Jun Osanai
小山内　潤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
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Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP2002297365A priority Critical patent/JP2004134568A/ja
Publication of JP2004134568A publication Critical patent/JP2004134568A/ja
Publication of JP2004134568A5 publication Critical patent/JP2004134568A5/ja
Pending legal-status Critical Current

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2002297365A 2002-10-10 2002-10-10 半導体装置の製造方法 Pending JP2004134568A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002297365A JP2004134568A (ja) 2002-10-10 2002-10-10 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002297365A JP2004134568A (ja) 2002-10-10 2002-10-10 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2004134568A true JP2004134568A (ja) 2004-04-30
JP2004134568A5 JP2004134568A5 (enExample) 2005-10-27

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ID=32287088

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002297365A Pending JP2004134568A (ja) 2002-10-10 2002-10-10 半導体装置の製造方法

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JP (1) JP2004134568A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012195607A (ja) * 2012-06-13 2012-10-11 Lapis Semiconductor Co Ltd 高耐圧電界効果トランジスタ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012195607A (ja) * 2012-06-13 2012-10-11 Lapis Semiconductor Co Ltd 高耐圧電界効果トランジスタ

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