JP2004104088A5 - - Google Patents

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Publication number
JP2004104088A5
JP2004104088A5 JP2003184397A JP2003184397A JP2004104088A5 JP 2004104088 A5 JP2004104088 A5 JP 2004104088A5 JP 2003184397 A JP2003184397 A JP 2003184397A JP 2003184397 A JP2003184397 A JP 2003184397A JP 2004104088 A5 JP2004104088 A5 JP 2004104088A5
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JP
Japan
Prior art keywords
layer
nitride semiconductor
semiconductor device
well
barrier layer
Prior art date
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Application number
JP2003184397A
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English (en)
Japanese (ja)
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JP2004104088A (ja
JP3951973B2 (ja
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Priority to JP2003184397A priority Critical patent/JP3951973B2/ja
Priority claimed from JP2003184397A external-priority patent/JP3951973B2/ja
Publication of JP2004104088A publication Critical patent/JP2004104088A/ja
Publication of JP2004104088A5 publication Critical patent/JP2004104088A5/ja
Application granted granted Critical
Publication of JP3951973B2 publication Critical patent/JP3951973B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003184397A 2003-06-27 2003-06-27 窒化物半導体素子 Expired - Fee Related JP3951973B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003184397A JP3951973B2 (ja) 2003-06-27 2003-06-27 窒化物半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003184397A JP3951973B2 (ja) 2003-06-27 2003-06-27 窒化物半導体素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP12981098A Division JP3857417B2 (ja) 1998-05-13 1998-05-13 窒化物半導体素子

Publications (3)

Publication Number Publication Date
JP2004104088A JP2004104088A (ja) 2004-04-02
JP2004104088A5 true JP2004104088A5 (enExample) 2005-10-06
JP3951973B2 JP3951973B2 (ja) 2007-08-01

Family

ID=32290611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003184397A Expired - Fee Related JP3951973B2 (ja) 2003-06-27 2003-06-27 窒化物半導体素子

Country Status (1)

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JP (1) JP3951973B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5149093B2 (ja) * 2003-06-26 2013-02-20 住友電気工業株式会社 ＧａＮ基板及びその製造方法、並びに窒化物半導体素子及びその製造方法
US7709284B2 (en) * 2006-08-16 2010-05-04 The Regents Of The University Of California Method for deposition of magnesium doped (Al, In, Ga, B)N layers
KR100674862B1 (ko) * 2005-08-25 2007-01-29 삼성전기주식회사 질화물 반도체 발광 소자
JP2010512661A (ja) 2006-12-11 2010-04-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 高特性無極性ｉｉｉ族窒化物光デバイスの有機金属化学気相成長法（ｍｏｃｖｄ）による成長
JP2008244360A (ja) * 2007-03-28 2008-10-09 Furukawa Electric Co Ltd:The 半導体発光素子
EP2045374A3 (en) 2007-10-05 2011-02-16 Sumitomo Electric Industries, Ltd. Method of manufacturing a GaN substrate and a GaN epitaxial wafer
JP5181885B2 (ja) * 2007-10-05 2013-04-10 住友電気工業株式会社 ＧａＮ基板の製造方法、エピウエハの製造方法、半導体素子の製造方法およびエピウエハ
JP4912386B2 (ja) 2008-11-26 2012-04-11 シャープ株式会社 ＩｎＧａＮ層の製造方法
JP5504618B2 (ja) * 2008-12-03 2014-05-28 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子及びその製造方法
JP5143076B2 (ja) * 2009-04-09 2013-02-13 シャープ株式会社 窒化物半導体発光素子の製造方法
US8218595B2 (en) * 2010-05-28 2012-07-10 Corning Incorporated Enhanced planarity in GaN edge emitting lasers

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