JP2004095959A - Nitride semiconductor light emitting element - Google Patents

Nitride semiconductor light emitting element Download PDF

Info

Publication number
JP2004095959A
JP2004095959A JP2002256884A JP2002256884A JP2004095959A JP 2004095959 A JP2004095959 A JP 2004095959A JP 2002256884 A JP2002256884 A JP 2002256884A JP 2002256884 A JP2002256884 A JP 2002256884A JP 2004095959 A JP2004095959 A JP 2004095959A
Authority
JP
Japan
Prior art keywords
nitride semiconductor
light emitting
semiconductor layer
layer
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002256884A
Other languages
Japanese (ja)
Other versions
JP2004095959A5 (en
JP4211329B2 (en
Inventor
Takahiko Sakamoto
坂本 貴彦
Original Assignee
Nichia Chem Ind Ltd
日亜化学工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chem Ind Ltd, 日亜化学工業株式会社 filed Critical Nichia Chem Ind Ltd
Priority to JP2002256884A priority Critical patent/JP4211329B2/en
Priority claimed from PCT/JP2003/009836 external-priority patent/WO2004013916A1/en
Publication of JP2004095959A publication Critical patent/JP2004095959A/en
Publication of JP2004095959A5 publication Critical patent/JP2004095959A5/ja
Application granted granted Critical
Publication of JP4211329B2 publication Critical patent/JP4211329B2/en
Application status is Active legal-status Critical
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01015Phosphorus [P]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01045Rhodium [Rh]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]

Abstract

<P>PROBLEM TO BE SOLVED: To provide a structure of a nitride semiconductor light emitting element that can prevent short-circuiting on the side. <P>SOLUTION: The nitride semiconductor light emitting element is provided with a light emitting layer made of nitride semiconductor between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer. A trapezoidal conoidal laminated body is formed including the p-type nitride semiconductor layer and the light emitting layer, and the laminated body is buried in a metallic member so that its side is insulated. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a nitride semiconductor light emitting device.
[0002]
[Prior art]
In recent years, light-emitting elements using GaN-based compound semiconductors have been widely used as light-emitting elements that can emit blue light. In this GaN-based compound semiconductor light emitting device, a GaN-based compound semiconductor layer is grown on a sapphire substrate, which is an insulating substrate. Therefore, it is necessary to form a p-type electrode and an n-type electrode on the same surface side. (For example, see Patent Document 1). In the nitride semiconductor light emitting device in which the p-type electrode and the n-type electrode are formed on the same surface side, it is necessary to remove part of the p-type semiconductor layer and the light-emitting layer in order to form the n-type electrode. In particular, there is a problem that the area of the light emitting region is reduced.
[0003]
Therefore, recently, a method has been proposed in which a necessary GaN-based compound semiconductor layer is grown on a sapphire substrate, a warp prevention layer is formed thereon, and then the sapphire substrate is removed by polishing (for example, a patent) Reference 2). According to the method disclosed in Patent Document 2, it is possible to produce a nitride semiconductor light emitting device in which electrodes (an n-type electrode on one side and a p-type electrode on the other side) are formed on both sides. .
[0004]
[Patent Document 1]
JP-A-8-330629 (FIGS. 1 to 3)
[Patent Document 2]
JP 2001-313422 A (page 6, right column, line 8 to page 7, left column, line 42, FIGS. 8 and 9)
[0005]
[Problems to be solved by the invention]
However, the method disclosed in Patent Document 2 has a problem that the p-side layer and the n-side layer are easily short-circuited at the cut surface (side surface of the element after division) when divided into individual elements. .
Accordingly, an object of the present invention is to provide a structure of a nitride semiconductor light emitting device capable of preventing a short circuit on a side surface and a manufacturing method thereof.
[0006]
[Means for Solving the Problems]
In order to achieve the above object, a first nitride semiconductor light emitting device according to the present invention has a light emitting layer made of a nitride semiconductor between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer. In the nitride semiconductor light emitting device obtained,
A trapezoidal cone-shaped stacked body is formed so as to include at least the p-type nitride semiconductor layer and the light emitting layer, and the stacked body is embedded in a metal member so that side surfaces are insulated.
The second nitride semiconductor light emitting device according to the present invention includes a light emitting layer made of a nitride semiconductor between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer. In
A stack having a trapezoidal pyramid shape is formed so as to include at least the p-type nitride semiconductor layer and the light emitting layer, and the stack is held by a metal member provided so as to face along the surface of the stack. It is characterized by that.
In the nitride semiconductor light emitting device configured as described above, the stacked body is embedded in a metal member so that the side surface is insulated, and the side surface of the stacked body is not damaged during or after cutting. , Reliability can be improved.
In addition, since the nitride semiconductor light emitting device according to the present invention can be formed with electrodes on both sides, the light emitting region is larger than that of a conventional nitride semiconductor light emitting device in which positive and negative electrodes are provided on one surface. be able to.
[0007]
In the first and second nitride semiconductor elements according to the present invention, the surface of the metal member located on the opposite side of the stacked body is preferably a flat surface.
If it does in this way, when mounting an element, it will become possible to mount easily by mounting with the flat surface facing a mounting substrate.
In the first and second nitride semiconductor elements, a transparent electrode is formed on a surface of the two opposite surfaces of the n-type nitride semiconductor layer located on the opposite side of the stacked body. The light may be emitted through the transparent electrode.
In this way, current can be uniformly injected into the entire light emitting layer, and uniform light emission is possible. In this case, the transparent electrode is preferably made of ITO having high translucency and a low resistance value.
[0008]
In the first and second nitride semiconductor light emitting devices of the present invention, the p-type electrode formed between the stacked body and the metal member so as to be in ohmic contact with the p-type nitride semiconductor layer may be Rh. It is preferable to contain, and it can prevent peeling of an electrode by this.
[0009]
Furthermore, in the first and second nitride semiconductor light emitting devices of the present invention, the stacked body may include a part of the n-type nitride semiconductor layer, or the n-type nitride semiconductor layer. It may be configured to include all of the above.
[0010]
In the first and second nitride semiconductor light emitting devices of the present invention, the thickness of the metal member is preferably 50 μm or more in order to more reliably maintain the shape of the light emitting region.
[0011]
In the first and second nitride semiconductor light emitting devices of the present invention, a plurality of the stacked bodies may be provided, and a light emitting device is formed using the plurality of stacked bodies, thereby emitting a large area of light. An element can be configured.
Furthermore, in the light-emitting element including a plurality of the stacked bodies, the plurality of stacked bodies may be provided on a common n-type nitride semiconductor layer, or may be separated for each stacked body. Good.
[0012]
In the first and second nitride semiconductor light emitting devices of the present invention, the metal member may be a metal selected from the group consisting of Ti, Ag, Al, Ni, Pt, Au, Rh, Cu, W, or the like. It is preferably made of an alloy containing at least the metal.
[0013]
The method for manufacturing a light emitting device according to the present invention includes a first step of forming an n-type semiconductor layer, a light emitting layer, and a p type semiconductor layer on a substrate, and the p type semiconductor layer and the light emitting layer. A second step of forming a trapezoidal cone-shaped light emitting region; a third step of forming a metal member so as to cover the light emitting region; a fourth step of removing the substrate; and a metal member between the light emitting regions. And a fifth step of separating each light emitting element by cutting.
[0014]
In the method for manufacturing a light emitting element according to the present invention, it is preferable that the metal member is formed by plating in the third step.
[0015]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments according to the present invention will be described below with reference to the drawings.
Embodiment 1 FIG.
As shown in FIG. 1, the nitride semiconductor light emitting device according to the first embodiment of the present invention is provided so that a part of the nitride semiconductor layer constituting the light emitting region is embedded in the metal member 1, and the metal member. 1 holds the shape of the entire light emitting element.
[0016]
In the nitride semiconductor light emitting device of the first embodiment, the light emitting layer 12 is provided between the n-type nitride semiconductor layer 11 and the p-type nitride semiconductor layer 13 to form a light emitting region having a double hetero structure. A part of the p-type nitride semiconductor layer, the light emitting layer, and the n-type nitride semiconductor layer are processed into a trapezoidal cone shape (truncated cone shape). That is, in the present invention, the trapezoidal cone-shaped stacked body is formed so as to include at least the p-type nitride semiconductor layer and the light emitting layer. In the stacked body 2, a p-type ohmic electrode 22 is formed on almost the entire surface of the p-type nitride semiconductor layer 13, the peripheral portion of the p-type ohmic electrode 22, the inclined side surface 2 a of the stacked body 2, and the side surface 2 a thereof. An insulating layer 3 is formed to cover the continuous n-type nitride semiconductor layer 11.
[0017]
The laminate 2 configured as described above is held so as to be embedded in the metal member 1. The side surface of the laminate 2 is embedded in the metal member 1 through the insulating layer 3, and the surface of the laminate 2 on which the p-type ohmic electrode 22 is formed faces the metal member 1 through the p-type ohmic electrode 22. is doing. Further, a transparent electrode 21 is formed on a surface of the two opposite surfaces of the n-type nitride semiconductor layer 21 that is located on the opposite side of the stacked body 2, and an n-pad electrode 23 is formed on a part of the transparent electrode 21. Is formed.
[0018]
In the nitride semiconductor light emitting device of the first embodiment configured as described above, light emitted from the light emitting layer 12 of the multilayer body 2 is emitted from the opposite side of the metal member 1 through the transparent electrode 21.
[0019]
Next, a method for manufacturing the nitride semiconductor light emitting device of the first embodiment will be described.
In this manufacturing method, first, as shown in FIG. 2, an n-type nitride semiconductor layer 11, a light emitting layer 12, and a p-type nitride semiconductor layer 13 are formed on a sapphire substrate 10 via a buffer layer (not shown), for example. Grow in that order.
Next, a trapezoidal cone-shaped stacked body 2 is formed between the elements by etching until the n-type nitride semiconductor layer is exposed (FIG. 3).
The laminated body 2 having the trapezoidal cone shape can be processed into a trapezoidal cone shape corresponding to the shape of the mask by, for example, forming a mask in a predetermined trapezoidal cone shape and etching using the mask.
[0020]
Specifically, first, a mask M1 having a trapezoidal cross section is formed on the p-type nitride semiconductor layer 13 as shown in FIG. The mask M1 is formed using a material that can be etched at a constant rate by reactive ion etching.
Next, the semiconductor layers (p-type nitride semiconductor layer 13, light emitting layer 12, and n-type nitride semiconductor layer 11) formed on the sapphire substrate 10 are etched from above the mask M1 by reactive ion etching. In this etching step, the mask M1 itself together with the semiconductor layer is removed little by little by etching. In addition, in FIG.11 (b), it is the part from which the part which attached | subjected the code | symbol of R1 between a broken line and a continuous line was removed.
This etching is continued until the surface of the n-type nitride semiconductor layer 11 is exposed around the stacked portion 2 (FIG. 11C).
In this way, the trapezoidal cone-shaped laminated portion 2 corresponding to the shape of the mask M1 is formed.
In the present method, a desired trapezoidal cone-shaped stacked portion 2 can be formed by setting the shape of the mask M1 in consideration of the etching rate by RIE of the mask material and the nitride semiconductor material.
[0021]
As an etching means for processing the laminate 2 by the above-described method, dry etching such as reactive ion beam etching and ion milling can be used in addition to reactive ion etching.
Further, the processing of the trapezoidal cone-shaped laminated portion 2 may use an undercutting (side etching) phenomenon by using isotropic etching means such as wet etching. When this undercutting is used, the trapezoidal cone shape can be easily processed, but the processing accuracy is inferior to the method using dry etching described above.
[0022]
In addition, the inclination angle of the inclined side surface 2a of the stacked body 2 (angle formed with the main surface of the sapphire substrate 10) is 30 in order to increase the extraction efficiency of light output through the n-type nitride semiconductor layer. It is preferably set in the range of degrees to 80 degrees, more preferably set to 45 degrees.
In the present invention, as the truncated cone, various trapezoidal cones such as a truncated cone cone, a pyramid (square pyramid, hexagonal pyramid, etc.) trapezoidal cone, and the like can be applied.
[0023]
After forming the trapezoidal cone-shaped stacked portion 2 as described above, the p-type ohmic electrode 22 is formed on almost the entire upper surface of the stacked portion 2 (the surface of the p-type nitride semiconductor layer 13).
Here, in this specification, the upper bottom surface refers to the smaller one of the two surfaces facing each other in parallel with each other in the trapezoidal cone shape, and in the case of the bottom surface of the laminate 2, The larger of the faces.
As the p-type ohmic electrode 22, an electrode made of Ni / Au, Ni / Pt, or Pd / Pt can be used. However, in the present invention, the Rh layer is formed by p-type nitridation such as Rh / Au, Rh / Pt, etc. It is preferable to use an electrode formed as a layer in contact with the physical semiconductor layer 13. As described above, when Rh is formed as the first layer in contact with the p-type nitride semiconductor layer 13, it is possible to prevent the p-type ohmic electrode 22 from being separated from the p-type nitride semiconductor layer 13 after the metal member 1 is formed. .
The combination indicated by (/) is that the metal described before (/) is formed as the first layer in contact with the p-type nitride semiconductor layer 13, and the second layer formed on the first layer is formed. It means that it was made of the metal described after (/).
[0024]
After forming the p-type ohmic electrode 22 on the p-type nitride semiconductor layer of each stacked body 2, as shown in FIG. 5, the central portion of each p-type ohmic electrode 22 (refers to a portion excluding the peripheral portion). An insulating film 3 is formed so as to cover the entire surface of the substrate except for.
The insulating film 3 can be suitably formed using an inorganic insulating film such as SiO 2 , TiO 2 , Al 2 O 3 , Si 3 N 4 , ZrO 2, etc., but is formed using an organic insulating film. May be.
Thereafter, wiring electrodes 24 for connecting the plurality of stacked portions 2 are formed as necessary (FIG. 6).
Next, the reflective layer 24 is formed. The reflective layer 24 is formed using a highly light reflective material such as Ag, Pt, Rh, Al. In the case where one light emitting element is constituted by a plurality of stacked portions, the reflective layer 24 may also serve as an electrode for wiring. In particular, the side surface of the trapezoidal cone-shaped laminated body is inclined, and the reflective layer is provided so as to face this, so that the light use efficiency is dramatically improved.
In the present invention, the insulating film 3 may also serve as a reflective layer.
Specific examples of the insulating film 3 that can be used as the reflective layer include SiO 2 , TiO 2 , Al 2 O 3 , Ta 2 O 5 , ZrO 2 , Nb 2 O 5 , and Y 2 O 3 . More preferably, the insulating film 3 which also serves as a reflective layer having a multilayer structure is formed by alternately forming a combination of two materials having different refractive indexes from among these materials. For example, a reflective layer having a multilayer structure is formed by laminating 10 to 20 layers in combination of TiO 2 / SiO 2 .
[0025]
Next, for example, the metal member 1 is formed on the entire surface by plating or the like (FIG. 7). In the present invention, the metal member 1 is primarily intended to maintain the shape of the light emitting element after removing the sapphire substrate 10 in a later step, and is therefore thick (preferably 50 μm). As described above, it is more preferable to form the film in the range of 100 to 200 μm.
In the present invention, the metal member 1 only needs to fulfill this purpose first. For this purpose, for example, various metals such as Ti, Ag, Al, Ni, Pt, Au, Rh, Cu, and W are used. Can be used.
[0026]
In the first embodiment, the metal member 1 is required to have good adhesion with the reflective film 24. Further, when the reflective film 24 is not formed, the metal member 1 is required to have good adhesion between the insulating film 3 and the p-type ohmic electrode 22, particularly the insulating film 3. In that case, Ti, W, Al, and Ni are mentioned as materials having good adhesion to the insulating film 3 made of the above-described materials.
[0027]
Moreover, you may make it abbreviate | omit the reflection layer 24 by forming the metal member 1 itself with a material with a high reflectance. Examples of such a metal material include Ag, Al, Pt, and Rh.
[0028]
In the present invention, in addition to the primary function of maintaining the shape of the light emitting element, the metal member 1 has a multilayer structure in which a plurality of layers having respective functions are stacked in order to perform a light reflection function and the like. It is good. For example, a first metal film that has a high reflectivity with respect to emitted light and has good adhesion to the insulating film 3, the p-type ohmic electrode 22, and the like can be formed as a base layer and can be formed thick on the first metal film. The metal member 1 can be configured by forming two metal films.
[0029]
In the present invention, since the metal member 1 needs to be formed relatively thick, it is preferable to form the metal member 1 by using electroless plating or electroplating with a high film forming speed.
Specifically, electroplating such as Ni, Cu, Al and Au, and electroless plating such as Ni and Cu can be used.
In particular, the electroless Ni plating is preferable in that the strength of the electroless Ni plating is higher than that of Au, Cu, and Ag, so that the warpage of the wafer can be reduced and the electrical contact is unnecessary, and Ni is the uniformity of the plating layer, the deposition rate, It is an excellent material in terms of solder wettability, bump strength, and corrosion resistance.
[0030]
Next, as shown in FIG. 8, the sapphire substrate 10 is removed by irradiating a laser from the substrate 10 side. At this stage, since the relatively thick metal member 1 is formed, various methods such as polishing and etching can be used as a method for removing the substrate 10 in addition to laser irradiation.
[0031]
Then, an n-type electrode 21 which is a transparent electrode is formed on the surface of the n-type nitride semiconductor layer 11 exposed by removing the substrate 10 (FIG. 9). The n-type electrode 21 can be formed of W / Al, V / Al, W / Pt / Au, ZnO, ITO, Mo, or the like. In order to increase the light extraction efficiency, it is preferable to use ZnO or ITO, and it is more preferable to use ITO because it is an inexpensive and easily available material.
When the transparent electrode 21 is formed using this ITO, it is preferable to perform heat treatment in order to reduce the resistance value, and the preferable heat treatment temperature is 100 ° C to 500 ° C, and the more preferable heat treatment temperature is 200 ° C to 400 ° C. ° C.
[0032]
Next, the n pad electrode 23 is formed corresponding to each stacked body 2, and the insulating film 4 covering the peripheral portion of the n pad electrode 23 and the transparent electrode 21 is formed.
Then, the wafer is divided between the stacked portions to obtain individual light emitting elements.
Here, in the present invention, the division position when dividing into individual elements is at least a position away from the inclined side surface 2a of the multilayer body 2, and the inclined side surface 2a is separated from the side surface of the element after division. .
[0033]
In the nitride semiconductor light-emitting device according to the first embodiment of the present invention configured as described above, the division position when dividing the device is away from the inclined side surface 2a of the multilayer body 2, and thus the inclination of the multilayer body 2 The PN junction surface of the side surface 2a is not damaged.
Moreover, since the dividing position when dividing into elements is separated from the inclined side surface 2a of the multilayer body 2, it is possible to prevent a short circuit of the PN junction surface due to cutting waste when the metal member 1 is cut.
[0034]
Further, in the nitride semiconductor light emitting device according to the first embodiment of the present invention, since the electrodes are formed on both sides of the stacked body 2, one electrode is formed like the device in which the electrodes are formed on the same surface side. Therefore, it is not necessary to remove a part of the light emitting layer. Thereby, since the light emitting region can be secured without reducing the area of the light emitting layer, the light emission efficiency can be improved.
[0035]
Further, in the nitride semiconductor light emitting device according to the first embodiment of the present invention, since the electrodes are formed on both sides of the multilayer body 2, it is possible to easily flow a current uniformly over the entire light emitting layer, and the entire light emitting layer Can be emitted uniformly and efficiently.
In particular, in the case where one light emitting element is constituted by a plurality of stacked portions, a light emitting element excellent in uniformity within the light emitting surface can be provided in a relatively wide area.
[0036]
Further, in the nitride semiconductor light emitting device of the first embodiment, since the transparent electrode 21 is formed on almost the entire surface of the n-type nitride semiconductor layer, other current can be uniformly injected into the entire light emitting layer. The entire light emitting layer can emit light uniformly.
However, the present invention is not limited to this, and instead of the transparent electrode 21, a network-like (lattice-like) n-type electrode is formed on almost the entire surface of the n-type nitride semiconductor layer, and light is transmitted from between the lattices. An output may be made, or an n-type electrode may be formed on a part of the n-type nitride semiconductor layer.
Since an n-type nitride semiconductor can have a smaller resistance value than a p-type nitride semiconductor, current easily diffuses in the n-type nitride semiconductor layer, and even when a lattice-shaped n-type electrode is used, The grating (the area of the portion where no electrode is formed) can be increased, and light can be emitted without much blocking by the electrode. Further, even when an n-type electrode is formed on a part of the n-type nitride semiconductor layer, a current can be injected into a relatively wide range of light-emitting layers.
[0037]
Modified example.
In the first embodiment described above, the n-type nitride semiconductor layer 11 is etched halfway in the thickness direction so that the stacked body includes at least a part of the n-type nitride semiconductor layer. However, the present invention is not limited to this, and the stacked portion 102a may be formed by etching only the p-type nitride semiconductor layer 13 and the light emitting layer 12, as shown in FIG. As shown in FIG. 13, after the p-type nitride semiconductor layer 13 and the light emitting layer 12 are etched, the n-type nitride semiconductor layer 11 is continuously etched until the sapphire substrate is exposed. The stacked portion 102b may be formed by the semiconductor layer 13, the light emitting layer 12, and the n-type nitride semiconductor layer 11.
[0038]
Embodiment 2. FIG.
The nitride semiconductor light emitting device according to the second embodiment of the present invention is a light emitting device in which four stacked bodies 102a are arranged as an example, as shown in FIG.
That is, as shown in FIG. 17, the nitride semiconductor light emitting device of the second embodiment has a total of 16 quadrangular pyramid-shaped stacks 102a (four p-type nitride semiconductor layers and light emitting layers). Is arranged on one surface of the n-type nitride semiconductor layer 11 to constitute a light emitting device having a relatively large area.
In the nitride semiconductor light emitting device of the second embodiment, the transparent electrode 23 common to all the stacked bodies 102a is formed as an n-type ohmic electrode on the entire other surface of the n-type nitride semiconductor layer 11. One n-pad electrode 23 is formed at the center.
Further, in the nitride semiconductor light emitting device of the second embodiment, the 16 laminated bodies 102a constitute one light emitting element, and the division position is at least a position away from the inclined side surface 2a of the laminated body 2. In this way, it is divided between the stacked portions.
[0039]
Since the nitride semiconductor light emitting device of the second embodiment configured as described above is separated from the inclined side surface 2a of the stacked body 2 at the time of dividing into the elements, the PN of the inclined side surface 2a of the stacked body 2 The joint surface is not damaged, and the PN joint surface can be prevented from being short-circuited by cutting waste when the metal member 1 is cut.
[0040]
Moreover, in the nitride semiconductor light emitting device of the first embodiment according to the present invention, the luminous efficiency can be improved for the same reason as the nitride semiconductor light emitting device of the first embodiment, and the entire light emitting layer can be made uniform and Light can be emitted efficiently.
[0041]
The nitride semiconductor light emitting device of the second embodiment described above does not include the n-type nitride semiconductor layer 11, and uses the stacked body 102a in which the p-type nitride semiconductor layer 13 and the light emitting layer 12 are stacked. Configured. However, the present invention is not limited to this, and as illustrated in FIG. 15, a stacked body 102 b in which an n-type nitride semiconductor layer 11, a p-type nitride semiconductor layer 13, and a light emitting layer 12 are stacked is used. It may be configured.
[0042]
In the nitride semiconductor light emitting device of the second embodiment described above, the n-type nitride semiconductor layer 11 is formed on the wafer so as to be separated between the light emitting devices without being separated for each stacked body in one light emitting device. After that, the n-type nitride semiconductor layer 11 may be divided for each element at the separated portion (FIG. 16).
[0043]
In addition, the nitride semiconductor light emitting device of the second embodiment is configured using the quadrangular pyramid-shaped stacked body 102a, but the present invention is not limited to this, and the truncated cone-shaped stacked body 102b is used. You may make it comprise (FIG. 18).
[0044]
【The invention's effect】
As described above in detail, the nitride semiconductor light emitting device according to the present invention is a nitride having a light emitting layer made of a nitride semiconductor between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer. In the semiconductor light emitting device, a trapezoidal cone-shaped laminate is formed so as to include the p-type nitride semiconductor layer and the light emitting layer, and the laminate is embedded in a metal member so that the side surface is insulated. The side surfaces of the laminate are not damaged when or after cutting. Therefore, according to the nitride semiconductor light emitting device according to the present invention, the reliability can be improved.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a nitride semiconductor light-emitting element according to a first embodiment of the present invention.
2 is a cross-sectional view after forming a semiconductor layer on a sapphire substrate in the method for manufacturing a nitride semiconductor light-emitting element according to the first embodiment of the present invention. FIG.
3 is a cross-sectional view after forming a stacked body by etching a semiconductor layer on a sapphire substrate in the manufacturing method of Embodiment 1. FIG.
4 is a cross-sectional view after forming a p-type electrode on each stacked body in the manufacturing method of Embodiment 1. FIG.
5 is a cross-sectional view after forming an insulating layer 3 in the manufacturing method of Embodiment 1. FIG.
6 is a cross-sectional view after a reflective layer 24 is formed in the manufacturing method of Embodiment 1. FIG.
7 is a cross-sectional view after forming the metal member 1 in the manufacturing method of the first embodiment. FIG.
8 is a cross-sectional view after the sapphire substrate is peeled off in the manufacturing method of Embodiment 1. FIG.
9 is a cross-sectional view after forming a transparent electrode on an n-type nitride semiconductor layer after peeling off a sapphire substrate in the manufacturing method of Embodiment 1. FIG.
10 is a cross-sectional view after forming an n-pad electrode and an insulating film 4 after forming a transparent electrode in the manufacturing method of Embodiment 1. FIG.
11 is a cross-sectional view showing a method of forming a trapezoidal cone-shaped laminated body in the manufacturing method of Embodiment 1. FIG.
12 is a cross sectional view of a nitride semiconductor device according to a modification of the first embodiment. FIG.
13 is a cross-sectional view of a nitride semiconductor device according to a modification different from FIG. 12 of the first embodiment. FIG.
14 is a cross-sectional view of the nitride semiconductor device of the second embodiment. FIG.
15 is a cross sectional view of a nitride semiconductor device according to Modification 1 of Embodiment 2. FIG.
16 is a cross-sectional view of a nitride semiconductor device according to Modification 2 of Embodiment 2. FIG.
17 is a plan view of the nitride semiconductor device of the second embodiment. FIG.
18 is a plan view of a nitride semiconductor device according to Modification 3 of Embodiment 2. FIG.
[Explanation of symbols]
1 ... Metal member,
2 ... Laminated body,
2a ... side,
3 ... Insulating layer,
10 ... sapphire substrate,
11 ... n-type nitride semiconductor layer,
12 ... light emitting layer,
13 ... p-type nitride semiconductor layer,
21 ... Transparent electrode,
22 ... p-type ohmic electrode,
23 ... n pad electrode,
M1 ... Mask.

Claims (15)

  1. In a nitride semiconductor light emitting device having a light emitting layer made of a nitride semiconductor between an n type nitride semiconductor layer and a p type nitride semiconductor layer,
    A nitride having a trapezoidal pyramid shape formed so as to include at least the p-type nitride semiconductor layer and the light emitting layer, and the laminate is embedded in a metal member so that a side surface is insulated. Semiconductor light emitting device.
  2. In a nitride semiconductor light emitting device having a light emitting layer made of a nitride semiconductor between an n type nitride semiconductor layer and a p type nitride semiconductor layer,
    A stack having a trapezoidal pyramid shape is formed so as to include at least the p-type nitride semiconductor layer and the light emitting layer, and the stack is held by a metal member provided so as to face along the surface of the stack. A nitride semiconductor light emitting device characterized by the above.
  3. The nitride semiconductor light-emitting element according to claim 1, wherein a surface of the metal member located on the opposite side of the laminate is a flat surface.
  4. The nitriding as described in any one of Claims 1-3 in which the transparent electrode is formed in the surface located in the other side of the said laminated body among the two surfaces which the said n-type nitride semiconductor layer opposes. Semiconductor light emitting device.
  5. The nitride semiconductor light emitting device according to claim 4, wherein the transparent electrode is ITO.
  6. 6. The nitriding according to claim 1, wherein the p-type electrode formed between the stacked body and the metal member so as to be in ohmic contact with the p-type nitride semiconductor layer includes Rh. Semiconductor light emitting device.
  7. The nitride semiconductor light emitting element according to claim 1, wherein the stacked body includes a part of the n-type nitride semiconductor layer.
  8. The nitride semiconductor light emitting element according to claim 1, wherein the stacked body is configured to include all of the n-type nitride semiconductor layer.
  9. The nitride semiconductor light-emitting element according to claim 1, wherein the metal member has a thickness of 50 μm or more.
  10. The nitride semiconductor light-emitting device according to claim 1, comprising a plurality of the stacked bodies.
  11. The nitride semiconductor light emitting element according to claim 10, wherein the plurality of stacked bodies are provided on a common n-type nitride semiconductor layer.
  12. The nitride semiconductor light emitting device according to claim 10, wherein the n-type nitride semiconductor is separated for each stacked body.
  13. The metal member is made of a metal selected from the group consisting of Ti, Ag, Al, Ni, Pt, Au, Rh, Cu, W, or the like, or an alloy containing at least the metal. The nitride semiconductor light-emitting device according to one.
  14. A first step of forming an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on a substrate;
    A second step of forming a trapezoidal cone-shaped light emitting region so as to include the p-type semiconductor layer and the light emitting layer;
    A third step of forming a metal member so as to cover the light emitting region;
    A fourth step of removing the substrate;
    And a fifth step of separating each light emitting element by cutting a metal member between the light emitting regions.
  15. The method for manufacturing a light-emitting element according to claim 14, wherein in the third step, the metal member is formed by plating.
JP2002256884A 2002-09-02 2002-09-02 Nitride semiconductor light emitting device and method of manufacturing light emitting device Active JP4211329B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002256884A JP4211329B2 (en) 2002-09-02 2002-09-02 Nitride semiconductor light emitting device and method of manufacturing light emitting device

Applications Claiming Priority (16)

Application Number Priority Date Filing Date Title
JP2002256884A JP4211329B2 (en) 2002-09-02 2002-09-02 Nitride semiconductor light emitting device and method of manufacturing light emitting device
PCT/JP2003/009836 WO2004013916A1 (en) 2002-08-01 2003-08-01 Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same
CNB2007101669499A CN100552997C (en) 2002-08-01 2003-08-01 Semiconductor luminous element, manufacturing method thereof, and luminous device using the same
KR1020057001748A KR100891403B1 (en) 2002-08-01 2003-08-01 Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same
CN200710166947A CN100595937C (en) 2002-08-01 2003-08-01 Semiconductor light emitting device and light emitting device
CNB038185342A CN100358163C (en) 2002-08-01 2003-08-01 Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same
CN200710166948A CN100595938C (en) 2002-08-01 2003-08-01 Semiconductor light emitting device, manufacturing method thereof, and light emitting device using the same
EP10184721.8A EP2290715B1 (en) 2002-08-01 2003-08-01 Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
EP03766716A EP1553640A4 (en) 2002-08-01 2003-08-01 Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same
KR1020087019079A KR101052139B1 (en) 2002-08-01 2003-08-01 Semiconductor light emitting device, manufacturing method thereof and light emitting device using same
KR1020087019080A KR101095753B1 (en) 2002-08-01 2003-08-01 Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same
AU2003252359A AU2003252359A1 (en) 2002-08-01 2003-08-01 Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same
US10/522,887 US7511311B2 (en) 2002-08-01 2003-08-01 Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
US12/155,841 US8035118B2 (en) 2002-08-01 2008-06-10 Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
US13/271,100 US8330179B2 (en) 2002-08-01 2011-10-11 Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
US13/711,444 US8742438B2 (en) 2002-08-01 2012-12-11 Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same

Publications (3)

Publication Number Publication Date
JP2004095959A true JP2004095959A (en) 2004-03-25
JP2004095959A5 JP2004095959A5 (en) 2005-10-27
JP4211329B2 JP4211329B2 (en) 2009-01-21

Family

ID=32061974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002256884A Active JP4211329B2 (en) 2002-09-02 2002-09-02 Nitride semiconductor light emitting device and method of manufacturing light emitting device

Country Status (1)

Country Link
JP (1) JP4211329B2 (en)

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006013698A1 (en) * 2004-08-02 2006-02-09 Nec Corporation Nitride semiconductor device and method for fabricating same
JP2006128659A (en) * 2004-09-29 2006-05-18 Sumitomo Chemical Co Ltd Nitride series semiconductor light emitting element and manufacturing method of the same
JP2006303429A (en) * 2005-04-15 2006-11-02 Samsung Electro Mech Co Ltd Manufacturing method for nitride semiconductor light-emitting element of vertical structure
JP2006310657A (en) * 2005-04-28 2006-11-09 Sanyo Electric Co Ltd Nitride semiconductor element and method for manufacturing the same
KR100665361B1 (en) 2005-12-27 2007-01-09 삼성전기주식회사 Nitride light emitting diode package
JP2007019526A (en) * 2006-08-11 2007-01-25 Rohm Co Ltd Process for fabricating nitride semiconductor element
JP2007081115A (en) * 2005-09-14 2007-03-29 Sony Corp Method for manufacturing semiconductor light emitting element
EP1856745A2 (en) * 2005-01-11 2007-11-21 SemiLEDs Corporation Systems and methods for producing white-light light emitting diodes
JP2008066704A (en) * 2006-08-11 2008-03-21 Sharp Corp Nitride semiconductor light emitting element and manufacturing method thereof
JP2008518436A (en) * 2004-10-22 2008-05-29 ソウル オプト−デバイス カンパニー リミテッド GaN-based compound semiconductor light emitting device and manufacturing method thereof
JP2008140872A (en) * 2006-11-30 2008-06-19 Toyoda Gosei Co Ltd Group iii-v semiconductor device and manufacturing method thereof
WO2009119847A1 (en) * 2008-03-28 2009-10-01 京セラ株式会社 Optical device and method of manufacturing optical device
JP2010141084A (en) * 2008-12-11 2010-06-24 Stanley Electric Co Ltd Method of manufacturing semiconductor light-emitting element
JP2011508414A (en) * 2007-12-19 2011-03-10 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Semiconductor light emitting device having light extraction structure
WO2011065723A2 (en) * 2009-11-25 2011-06-03 고려대학교 산학협력단 Vertical-structure semiconductor light emitting element and a production method therefor
JP4838857B2 (en) * 2005-12-08 2011-12-14 韓國電子通信研究院Electronics and Telecommunications Research Institute Silicon light emitting device
JP2012044171A (en) * 2010-08-20 2012-03-01 Chi Mei Lighting Technology Corp Light-emitting diode structure and method of manufacturing the same
JP2012044232A (en) * 2011-12-02 2012-03-01 Toshiba Corp Semiconductor light emitting device
KR101275366B1 (en) * 2010-07-28 2013-06-17 세미엘이디즈 옵토일렉트로닉스, 컴퍼니 리미티드 Vertical light emitting diode(led) die having electrode frame and method of fabrication
JP2014515183A (en) * 2011-03-22 2014-06-26 マイクロン テクノロジー, インク. Solid optoelectronic device having a plated support substrate
KR101427875B1 (en) * 2007-12-03 2014-08-08 엘지전자 주식회사 Light emitting device having vertical topology and method for manufacturing the same
JP2015032809A (en) * 2013-08-07 2015-02-16 ソニー株式会社 Light-emitting element, light-emitting element wafer, and electronic apparatus
EP2198467A4 (en) * 2007-10-04 2015-08-12 Lg Innotek Co Ltd Light emitting device and method for fabricating the same
JP2015188109A (en) * 2015-06-22 2015-10-29 シチズンホールディングス株式会社 Semiconductor light emitting element
US10483481B2 (en) 2016-10-19 2019-11-19 Micron Technology, Inc. Solid state optoelectronic device with plated support substrate

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5368620B1 (en) * 2012-11-22 2013-12-18 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof

Cited By (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006013698A1 (en) * 2004-08-02 2006-02-09 Nec Corporation Nitride semiconductor device and method for fabricating same
JP2006128659A (en) * 2004-09-29 2006-05-18 Sumitomo Chemical Co Ltd Nitride series semiconductor light emitting element and manufacturing method of the same
JP2008518436A (en) * 2004-10-22 2008-05-29 ソウル オプト−デバイス カンパニー リミテッド GaN-based compound semiconductor light emitting device and manufacturing method thereof
US7999279B2 (en) 2004-10-22 2011-08-16 Seoul Opto Device Co., Ltd. GaN compound semiconductor light emitting element and method of manufacturing the same
JP2012124523A (en) * 2004-10-22 2012-06-28 Postech Foundation Gan-based compound semiconductor light-emitting element, and method of manufacturing the same
US8274094B2 (en) 2004-10-22 2012-09-25 Seoul Opto Device Co., Ltd. GaN compound semiconductor light emitting element and method of manufacturing the same
US8143640B2 (en) 2004-10-22 2012-03-27 Seoul Opto Device Co., Ltd. GaN compound semiconductor light emitting element and method of manufacturing the same
JP2014179654A (en) * 2004-10-22 2014-09-25 Seoul Viosys Co Ltd GaN-BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND METHOD OF MANUFACTURING THE SAME
US8039861B2 (en) 2004-10-22 2011-10-18 Seoul Opto Device Co., Ltd. GaN compound semiconductor light emitting element and method of manufacturing the same
US8008101B2 (en) 2004-10-22 2011-08-30 Seoul Opto Device Co., Ltd. GaN compound semiconductor light emitting element and method of manufacturing the same
EP1856745A2 (en) * 2005-01-11 2007-11-21 SemiLEDs Corporation Systems and methods for producing white-light light emitting diodes
EP1856745A4 (en) * 2005-01-11 2013-01-09 Semileds Corp Systems and methods for producing white-light light emitting diodes
JP2006303429A (en) * 2005-04-15 2006-11-02 Samsung Electro Mech Co Ltd Manufacturing method for nitride semiconductor light-emitting element of vertical structure
JP4698411B2 (en) * 2005-04-15 2011-06-08 サムソン エルイーディー カンパニーリミテッド. Method of manufacturing vertical structure nitride semiconductor light emitting device
US8021901B2 (en) 2005-04-15 2011-09-20 Samsung Led Co., Ltd. Method of fabricating vertical structure nitride semiconductor light emitting device
JP2006310657A (en) * 2005-04-28 2006-11-09 Sanyo Electric Co Ltd Nitride semiconductor element and method for manufacturing the same
JP2007081115A (en) * 2005-09-14 2007-03-29 Sony Corp Method for manufacturing semiconductor light emitting element
JP4838857B2 (en) * 2005-12-08 2011-12-14 韓國電子通信研究院Electronics and Telecommunications Research Institute Silicon light emitting device
KR100665361B1 (en) 2005-12-27 2007-01-09 삼성전기주식회사 Nitride light emitting diode package
TWI395351B (en) * 2006-08-11 2013-05-01 Sharp Kk Nitride semiconductor light emitting device and method of manufacturing the same
US8324639B2 (en) 2006-08-11 2012-12-04 Sharp Kabushiki Kaisha Nitride semiconductor light emitting device
JP2008066704A (en) * 2006-08-11 2008-03-21 Sharp Corp Nitride semiconductor light emitting element and manufacturing method thereof
JP2007019526A (en) * 2006-08-11 2007-01-25 Rohm Co Ltd Process for fabricating nitride semiconductor element
US9029884B2 (en) 2006-08-11 2015-05-12 Sharp Kabushiki Kaisha Nitride semiconductor light emitting device
JP2008140872A (en) * 2006-11-30 2008-06-19 Toyoda Gosei Co Ltd Group iii-v semiconductor device and manufacturing method thereof
EP2198467A4 (en) * 2007-10-04 2015-08-12 Lg Innotek Co Ltd Light emitting device and method for fabricating the same
KR101427875B1 (en) * 2007-12-03 2014-08-08 엘지전자 주식회사 Light emitting device having vertical topology and method for manufacturing the same
US9142726B2 (en) 2007-12-19 2015-09-22 Philips Lumileds Lighting Company Llc Semiconductor light emitting device with light extraction structures
US9935242B2 (en) 2007-12-19 2018-04-03 Lumileds Llc Semiconductor light emitting device with light extraction structures
JP2011508414A (en) * 2007-12-19 2011-03-10 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Semiconductor light emitting device having light extraction structure
US10164155B2 (en) 2007-12-19 2018-12-25 Lumileds Llc Semiconductor light emitting device with light extraction structures
WO2009119847A1 (en) * 2008-03-28 2009-10-01 京セラ株式会社 Optical device and method of manufacturing optical device
JPWO2009119847A1 (en) * 2008-03-28 2011-07-28 京セラ株式会社 Optical device and method for manufacturing optical device
JP2010141084A (en) * 2008-12-11 2010-06-24 Stanley Electric Co Ltd Method of manufacturing semiconductor light-emitting element
US8932890B2 (en) 2009-11-25 2015-01-13 Lg Innotek Co., Ltd. Vertical-structure semiconductor light emitting element and a production method therefor
WO2011065723A2 (en) * 2009-11-25 2011-06-03 고려대학교 산학협력단 Vertical-structure semiconductor light emitting element and a production method therefor
WO2011065723A3 (en) * 2009-11-25 2011-09-29 고려대학교 산학협력단 Vertical-structure semiconductor light emitting element and a production method therefor
KR101198758B1 (en) 2009-11-25 2012-11-12 엘지이노텍 주식회사 Vertical structured semiconductor light emitting device and method for producing thereof
KR101275366B1 (en) * 2010-07-28 2013-06-17 세미엘이디즈 옵토일렉트로닉스, 컴퍼니 리미티드 Vertical light emitting diode(led) die having electrode frame and method of fabrication
JP2012044171A (en) * 2010-08-20 2012-03-01 Chi Mei Lighting Technology Corp Light-emitting diode structure and method of manufacturing the same
JP2014515183A (en) * 2011-03-22 2014-06-26 マイクロン テクノロジー, インク. Solid optoelectronic device having a plated support substrate
US9496454B2 (en) 2011-03-22 2016-11-15 Micron Technology, Inc. Solid state optoelectronic device with plated support substrate
JP2012044232A (en) * 2011-12-02 2012-03-01 Toshiba Corp Semiconductor light emitting device
US9716127B2 (en) 2013-08-07 2017-07-25 Sony Semiconductor Solutions Corporation Light-emitting element having an optical function film including a reflection layer
JP2015032809A (en) * 2013-08-07 2015-02-16 ソニー株式会社 Light-emitting element, light-emitting element wafer, and electronic apparatus
JP2015188109A (en) * 2015-06-22 2015-10-29 シチズンホールディングス株式会社 Semiconductor light emitting element
US10483481B2 (en) 2016-10-19 2019-11-19 Micron Technology, Inc. Solid state optoelectronic device with plated support substrate

Also Published As

Publication number Publication date
JP4211329B2 (en) 2009-01-21

Similar Documents

Publication Publication Date Title
US9397266B2 (en) Lateral semiconductor light emitting diodes having large area contacts
EP1601019B1 (en) Light emitting diode chip with monolithically integrated diode for electrostatic discharge protection and method of forming the same
US7429750B2 (en) Solid-state element and solid-state element device
EP2162928B1 (en) Method for the production of a plurality of optoelectronic components, and optoelectronic component
JP5016808B2 (en) Nitride semiconductor light emitting device and method for manufacturing nitride semiconductor light emitting device
KR101028965B1 (en) Light emitting diode including barrier layers and manufacturing methods therefor
US8384118B2 (en) LED assembly having maximum metal support for laser lift-off of growth substrate
US9224919B2 (en) Semiconductor light emitting device
US7115915B2 (en) Light-emitting diode
JP4841378B2 (en) Manufacturing method of vertical structure light emitting diode
JP5126875B2 (en) Manufacturing method of nitride semiconductor light emitting device
JP5362704B2 (en) Optoelectronic semiconductor body and manufacturing method thereof
CN100487890C (en) Systems and methods for removing operating heat from a light emitting diode
JP4885521B2 (en) Package integrated thin film LED
US7211833B2 (en) Light emitting diodes including barrier layers/sublayers
CN101442096B (en) Vertical-structure gallium nitride light-emitting diode element and its manufacturing method
KR100579028B1 (en) Semiconductor element and method for producing the same
JP5432234B2 (en) Mounting for semiconductor light emitting devices
JP5890498B2 (en) Radiation emitting semiconductor chip
JP2011517085A (en) Light emitting device and manufacturing method thereof
JP4996706B2 (en) Semiconductor light emitting device and manufacturing method thereof
KR101396121B1 (en) Method for handling a semiconductor wafer assembly
JP5223102B2 (en) Flip chip type light emitting device
US20080210955A1 (en) Group III-V semiconductor device and method for producing the same
TWI420693B (en) Light emitting device and fabrication thereof

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050902

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050902

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20060328

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20060328

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20060418

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070410

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20070611

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070611

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20071106

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080107

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080415

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080616

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20081007

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20081020

R150 Certificate of patent or registration of utility model

Ref document number: 4211329

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111107

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111107

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111107

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121107

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121107

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131107

Year of fee payment: 5

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250