JP2004095959A5 - - Google Patents

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Publication number
JP2004095959A5
JP2004095959A5 JP2002256884A JP2002256884A JP2004095959A5 JP 2004095959 A5 JP2004095959 A5 JP 2004095959A5 JP 2002256884 A JP2002256884 A JP 2002256884A JP 2002256884 A JP2002256884 A JP 2002256884A JP 2004095959 A5 JP2004095959 A5 JP 2004095959A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002256884A
Other languages
Japanese (ja)
Other versions
JP4211329B2 (en
JP2004095959A (en
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2002256884A external-priority patent/JP4211329B2/en
Priority to JP2002256884A priority Critical patent/JP4211329B2/en
Priority to KR1020057001748A priority patent/KR100891403B1/en
Priority to PCT/JP2003/009836 priority patent/WO2004013916A1/en
Priority to CN200710166948A priority patent/CN100595938C/en
Priority to KR1020087019079A priority patent/KR101052139B1/en
Priority to CNB038185342A priority patent/CN100358163C/en
Priority to CN200710166947A priority patent/CN100595937C/en
Priority to US10/522,887 priority patent/US7511311B2/en
Priority to EP03766716A priority patent/EP1553640A4/en
Priority to EP10184721.8A priority patent/EP2290715B1/en
Priority to CNB2007101669499A priority patent/CN100552997C/en
Priority to KR1020087019080A priority patent/KR101095753B1/en
Priority to AU2003252359A priority patent/AU2003252359A1/en
Publication of JP2004095959A publication Critical patent/JP2004095959A/en
Publication of JP2004095959A5 publication Critical patent/JP2004095959A5/ja
Priority to US12/155,841 priority patent/US8035118B2/en
Publication of JP4211329B2 publication Critical patent/JP4211329B2/en
Application granted granted Critical
Priority to US13/271,100 priority patent/US8330179B2/en
Priority to US13/711,444 priority patent/US8742438B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002256884A 2002-08-01 2002-09-02 Nitride semiconductor light emitting device and method of manufacturing light emitting device Expired - Fee Related JP4211329B2 (en)

Priority Applications (16)

Application Number Priority Date Filing Date Title
JP2002256884A JP4211329B2 (en) 2002-09-02 2002-09-02 Nitride semiconductor light emitting device and method of manufacturing light emitting device
CNB2007101669499A CN100552997C (en) 2002-08-01 2003-08-01 Semiconductor light-emitting elements and manufacture method thereof, use this light-emitting device
AU2003252359A AU2003252359A1 (en) 2002-08-01 2003-08-01 Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same
CN200710166948A CN100595938C (en) 2002-08-01 2003-08-01 Semiconductor light emitting device, manufacturing method thereof, and light emitting device using the same
KR1020087019079A KR101052139B1 (en) 2002-08-01 2003-08-01 Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same
CNB038185342A CN100358163C (en) 2002-08-01 2003-08-01 Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same
CN200710166947A CN100595937C (en) 2002-08-01 2003-08-01 Semiconductor light emitting device and light emitting device
US10/522,887 US7511311B2 (en) 2002-08-01 2003-08-01 Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
EP03766716A EP1553640A4 (en) 2002-08-01 2003-08-01 Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same
EP10184721.8A EP2290715B1 (en) 2002-08-01 2003-08-01 Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
KR1020057001748A KR100891403B1 (en) 2002-08-01 2003-08-01 Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same
KR1020087019080A KR101095753B1 (en) 2002-08-01 2003-08-01 Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same
PCT/JP2003/009836 WO2004013916A1 (en) 2002-08-01 2003-08-01 Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same
US12/155,841 US8035118B2 (en) 2002-08-01 2008-06-10 Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
US13/271,100 US8330179B2 (en) 2002-08-01 2011-10-11 Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
US13/711,444 US8742438B2 (en) 2002-08-01 2012-12-11 Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002256884A JP4211329B2 (en) 2002-09-02 2002-09-02 Nitride semiconductor light emitting device and method of manufacturing light emitting device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007152324A Division JP5214175B2 (en) 2007-06-08 2007-06-08 Nitride semiconductor light emitting device and method of manufacturing light emitting device

Publications (3)

Publication Number Publication Date
JP2004095959A JP2004095959A (en) 2004-03-25
JP2004095959A5 true JP2004095959A5 (en) 2005-10-27
JP4211329B2 JP4211329B2 (en) 2009-01-21

Family

ID=32061974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002256884A Expired - Fee Related JP4211329B2 (en) 2002-08-01 2002-09-02 Nitride semiconductor light emitting device and method of manufacturing light emitting device

Country Status (1)

Country Link
JP (1) JP4211329B2 (en)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3818297B2 (en) * 2003-05-27 2006-09-06 松下電工株式会社 Semiconductor light emitting device
WO2006013698A1 (en) * 2004-08-02 2006-02-09 Nec Corporation Nitride semiconductor device and method for fabricating same
JP2006128659A (en) * 2004-09-29 2006-05-18 Sumitomo Chemical Co Ltd Nitride series semiconductor light emitting element and manufacturing method of the same
EP1810351B1 (en) * 2004-10-22 2013-08-07 Seoul Opto Device Co., Ltd. Gan compound semiconductor light emitting element
US7195944B2 (en) * 2005-01-11 2007-03-27 Semileds Corporation Systems and methods for producing white-light emitting diodes
KR100638732B1 (en) 2005-04-15 2006-10-30 삼성전기주식회사 Fabricating method of vertical structure nitride semiconductor light emitting device
JP4799041B2 (en) * 2005-04-28 2011-10-19 三洋電機株式会社 Nitride semiconductor device manufacturing method
JP2007081115A (en) * 2005-09-14 2007-03-29 Sony Corp Method for manufacturing semiconductor light emitting element
KR100714123B1 (en) * 2005-12-08 2007-05-02 한국전자통신연구원 Silicon light emitting device
KR100665361B1 (en) 2005-12-27 2007-01-09 삼성전기주식회사 Nitride light emitting diode package
JP5126875B2 (en) * 2006-08-11 2013-01-23 シャープ株式会社 Manufacturing method of nitride semiconductor light emitting device
JP2007019526A (en) * 2006-08-11 2007-01-25 Rohm Co Ltd Process for fabricating nitride semiconductor element
JP4835409B2 (en) * 2006-11-30 2011-12-14 豊田合成株式会社 III-V group semiconductor device and manufacturing method thereof
KR101371511B1 (en) * 2007-10-04 2014-03-11 엘지이노텍 주식회사 Light emitting device having vertical topology
KR101427875B1 (en) * 2007-12-03 2014-08-08 엘지전자 주식회사 Light emitting device having vertical topology and method for manufacturing the same
US7985979B2 (en) 2007-12-19 2011-07-26 Koninklijke Philips Electronics, N.V. Semiconductor light emitting device with light extraction structures
WO2009119847A1 (en) * 2008-03-28 2009-10-01 京セラ株式会社 Optical device and method of manufacturing optical device
JP5207944B2 (en) * 2008-12-11 2013-06-12 スタンレー電気株式会社 Manufacturing method of semiconductor light emitting device
KR101198758B1 (en) 2009-11-25 2012-11-12 엘지이노텍 주식회사 Vertical structured semiconductor light emitting device and method for producing thereof
US8283652B2 (en) * 2010-07-28 2012-10-09 SemiLEDs Optoelectronics Co., Ltd. Vertical light emitting diode (VLED) die having electrode frame and method of fabrication
TW201210074A (en) * 2010-08-20 2012-03-01 Chi Mei Lighting Tech Corp Light-emitting diode structure and method for manufacturing the same
US9496454B2 (en) 2011-03-22 2016-11-15 Micron Technology, Inc. Solid state optoelectronic device with plated support substrate
JP2012044232A (en) * 2011-12-02 2012-03-01 Toshiba Corp Semiconductor light emitting device
JP5368620B1 (en) * 2012-11-22 2013-12-18 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof
JP6215612B2 (en) * 2013-08-07 2017-10-18 ソニーセミコンダクタソリューションズ株式会社 LIGHT EMITTING ELEMENT, LIGHT EMITTING ELEMENT WAFER, AND ELECTRONIC DEVICE
JP5996045B2 (en) * 2015-06-22 2016-09-21 シチズンホールディングス株式会社 Semiconductor light emitting device
EP4118693A4 (en) * 2020-03-11 2024-06-05 Lumileds LLC Laser lift-off processing system including metal grid

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