JP2004095959A5 - - Google Patents
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- JP2004095959A5 JP2004095959A5 JP2002256884A JP2002256884A JP2004095959A5 JP 2004095959 A5 JP2004095959 A5 JP 2004095959A5 JP 2002256884 A JP2002256884 A JP 2002256884A JP 2002256884 A JP2002256884 A JP 2002256884A JP 2004095959 A5 JP2004095959 A5 JP 2004095959A5
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Priority Applications (16)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002256884A JP4211329B2 (en) | 2002-09-02 | 2002-09-02 | Nitride semiconductor light emitting device and method of manufacturing light emitting device |
CNB2007101669499A CN100552997C (en) | 2002-08-01 | 2003-08-01 | Semiconductor light-emitting elements and manufacture method thereof, use this light-emitting device |
AU2003252359A AU2003252359A1 (en) | 2002-08-01 | 2003-08-01 | Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same |
CN200710166948A CN100595938C (en) | 2002-08-01 | 2003-08-01 | Semiconductor light emitting device, manufacturing method thereof, and light emitting device using the same |
KR1020087019079A KR101052139B1 (en) | 2002-08-01 | 2003-08-01 | Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same |
CNB038185342A CN100358163C (en) | 2002-08-01 | 2003-08-01 | Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same |
CN200710166947A CN100595937C (en) | 2002-08-01 | 2003-08-01 | Semiconductor light emitting device and light emitting device |
US10/522,887 US7511311B2 (en) | 2002-08-01 | 2003-08-01 | Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same |
EP03766716A EP1553640A4 (en) | 2002-08-01 | 2003-08-01 | Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same |
EP10184721.8A EP2290715B1 (en) | 2002-08-01 | 2003-08-01 | Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same |
KR1020057001748A KR100891403B1 (en) | 2002-08-01 | 2003-08-01 | Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same |
KR1020087019080A KR101095753B1 (en) | 2002-08-01 | 2003-08-01 | Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same |
PCT/JP2003/009836 WO2004013916A1 (en) | 2002-08-01 | 2003-08-01 | Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same |
US12/155,841 US8035118B2 (en) | 2002-08-01 | 2008-06-10 | Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same |
US13/271,100 US8330179B2 (en) | 2002-08-01 | 2011-10-11 | Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same |
US13/711,444 US8742438B2 (en) | 2002-08-01 | 2012-12-11 | Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002256884A JP4211329B2 (en) | 2002-09-02 | 2002-09-02 | Nitride semiconductor light emitting device and method of manufacturing light emitting device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007152324A Division JP5214175B2 (en) | 2007-06-08 | 2007-06-08 | Nitride semiconductor light emitting device and method of manufacturing light emitting device |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004095959A JP2004095959A (en) | 2004-03-25 |
JP2004095959A5 true JP2004095959A5 (en) | 2005-10-27 |
JP4211329B2 JP4211329B2 (en) | 2009-01-21 |
Family
ID=32061974
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002256884A Expired - Fee Related JP4211329B2 (en) | 2002-08-01 | 2002-09-02 | Nitride semiconductor light emitting device and method of manufacturing light emitting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4211329B2 (en) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3818297B2 (en) * | 2003-05-27 | 2006-09-06 | 松下電工株式会社 | Semiconductor light emitting device |
WO2006013698A1 (en) * | 2004-08-02 | 2006-02-09 | Nec Corporation | Nitride semiconductor device and method for fabricating same |
JP2006128659A (en) * | 2004-09-29 | 2006-05-18 | Sumitomo Chemical Co Ltd | Nitride series semiconductor light emitting element and manufacturing method of the same |
EP1810351B1 (en) * | 2004-10-22 | 2013-08-07 | Seoul Opto Device Co., Ltd. | Gan compound semiconductor light emitting element |
US7195944B2 (en) * | 2005-01-11 | 2007-03-27 | Semileds Corporation | Systems and methods for producing white-light emitting diodes |
KR100638732B1 (en) | 2005-04-15 | 2006-10-30 | 삼성전기주식회사 | Fabricating method of vertical structure nitride semiconductor light emitting device |
JP4799041B2 (en) * | 2005-04-28 | 2011-10-19 | 三洋電機株式会社 | Nitride semiconductor device manufacturing method |
JP2007081115A (en) * | 2005-09-14 | 2007-03-29 | Sony Corp | Method for manufacturing semiconductor light emitting element |
KR100714123B1 (en) * | 2005-12-08 | 2007-05-02 | 한국전자통신연구원 | Silicon light emitting device |
KR100665361B1 (en) | 2005-12-27 | 2007-01-09 | 삼성전기주식회사 | Nitride light emitting diode package |
JP5126875B2 (en) * | 2006-08-11 | 2013-01-23 | シャープ株式会社 | Manufacturing method of nitride semiconductor light emitting device |
JP2007019526A (en) * | 2006-08-11 | 2007-01-25 | Rohm Co Ltd | Process for fabricating nitride semiconductor element |
JP4835409B2 (en) * | 2006-11-30 | 2011-12-14 | 豊田合成株式会社 | III-V group semiconductor device and manufacturing method thereof |
KR101371511B1 (en) * | 2007-10-04 | 2014-03-11 | 엘지이노텍 주식회사 | Light emitting device having vertical topology |
KR101427875B1 (en) * | 2007-12-03 | 2014-08-08 | 엘지전자 주식회사 | Light emitting device having vertical topology and method for manufacturing the same |
US7985979B2 (en) | 2007-12-19 | 2011-07-26 | Koninklijke Philips Electronics, N.V. | Semiconductor light emitting device with light extraction structures |
WO2009119847A1 (en) * | 2008-03-28 | 2009-10-01 | 京セラ株式会社 | Optical device and method of manufacturing optical device |
JP5207944B2 (en) * | 2008-12-11 | 2013-06-12 | スタンレー電気株式会社 | Manufacturing method of semiconductor light emitting device |
KR101198758B1 (en) | 2009-11-25 | 2012-11-12 | 엘지이노텍 주식회사 | Vertical structured semiconductor light emitting device and method for producing thereof |
US8283652B2 (en) * | 2010-07-28 | 2012-10-09 | SemiLEDs Optoelectronics Co., Ltd. | Vertical light emitting diode (VLED) die having electrode frame and method of fabrication |
TW201210074A (en) * | 2010-08-20 | 2012-03-01 | Chi Mei Lighting Tech Corp | Light-emitting diode structure and method for manufacturing the same |
US9496454B2 (en) | 2011-03-22 | 2016-11-15 | Micron Technology, Inc. | Solid state optoelectronic device with plated support substrate |
JP2012044232A (en) * | 2011-12-02 | 2012-03-01 | Toshiba Corp | Semiconductor light emitting device |
JP5368620B1 (en) * | 2012-11-22 | 2013-12-18 | 株式会社東芝 | Semiconductor light emitting device and manufacturing method thereof |
JP6215612B2 (en) * | 2013-08-07 | 2017-10-18 | ソニーセミコンダクタソリューションズ株式会社 | LIGHT EMITTING ELEMENT, LIGHT EMITTING ELEMENT WAFER, AND ELECTRONIC DEVICE |
JP5996045B2 (en) * | 2015-06-22 | 2016-09-21 | シチズンホールディングス株式会社 | Semiconductor light emitting device |
EP4118693A4 (en) * | 2020-03-11 | 2024-06-05 | Lumileds LLC | Laser lift-off processing system including metal grid |
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2002
- 2002-09-02 JP JP2002256884A patent/JP4211329B2/en not_active Expired - Fee Related