JP2004087546A5 - - Google Patents
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- Publication number
- JP2004087546A5 JP2004087546A5 JP2002243004A JP2002243004A JP2004087546A5 JP 2004087546 A5 JP2004087546 A5 JP 2004087546A5 JP 2002243004 A JP2002243004 A JP 2002243004A JP 2002243004 A JP2002243004 A JP 2002243004A JP 2004087546 A5 JP2004087546 A5 JP 2004087546A5
- Authority
- JP
- Japan
- Prior art keywords
- silane compound
- here
- formula
- hydrogenated
- integer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910000077 silane Inorganic materials 0.000 claims description 34
- -1 silane compound Chemical class 0.000 claims description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims description 16
- 238000000576 coating method Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 13
- 239000011856 silicon-based particle Substances 0.000 claims description 13
- 239000002612 dispersion medium Substances 0.000 claims description 11
- 150000004756 silanes Chemical class 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 239000006185 dispersion Substances 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 239000008096 xylene Substances 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 239000011863 silicon-based powder Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 1
- OZAIFHULBGXAKX-VAWYXSNFSA-N AIBN Substances N#CC(C)(C)\N=N\C(C)(C)C#N OZAIFHULBGXAKX-VAWYXSNFSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- TXWRERCHRDBNLG-UHFFFAOYSA-N cubane Chemical group C12C3C4C1C1C4C3C12 TXWRERCHRDBNLG-UHFFFAOYSA-N 0.000 description 1
- GCOJIFYUTTYXOF-UHFFFAOYSA-N hexasilinane Chemical compound [SiH2]1[SiH2][SiH2][SiH2][SiH2][SiH2]1 GCOJIFYUTTYXOF-UHFFFAOYSA-N 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- CVLHDNLPWKYNNR-UHFFFAOYSA-N pentasilolane Chemical compound [SiH2]1[SiH2][SiH2][SiH2][SiH2]1 CVLHDNLPWKYNNR-UHFFFAOYSA-N 0.000 description 1
- DOBUHXUCKMAKSP-UHFFFAOYSA-N pentasilolanylsilane Chemical compound [SiH3][SiH]1[SiH2][SiH2][SiH2][SiH2]1 DOBUHXUCKMAKSP-UHFFFAOYSA-N 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- RCJOMOPNGOSMJU-UHFFFAOYSA-N prismane Chemical group C12C3C4C1C4C32 RCJOMOPNGOSMJU-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002243004A JP4016419B2 (ja) | 2002-08-23 | 2002-08-23 | シリコン膜形成用組成物およびシリコン膜の形成方法 |
| US10/515,728 US7473443B2 (en) | 2002-08-23 | 2003-08-15 | Composition for forming silicon film and method for forming silicon film |
| DE60328302T DE60328302D1 (de) | 2002-08-23 | 2003-08-15 | Zusammensetzung zum bilden eines siliziumfilms und verfahren zum bilden eines siliziumfilms |
| CNB038014351A CN100423197C (zh) | 2002-08-23 | 2003-08-15 | 硅膜形成用组合物和硅膜的形成方法 |
| AU2003262236A AU2003262236A1 (en) | 2002-08-23 | 2003-08-15 | Composition for forming silicon film and method for forming silicon film |
| KR1020047005943A KR20050026692A (ko) | 2002-08-23 | 2003-08-15 | 실리콘막 형성용 조성물 및 실리콘막의 형성 방법 |
| EP03792692A EP1551057B1 (en) | 2002-08-23 | 2003-08-15 | Composition for forming a silicon film and method for forming a silicon film |
| PCT/JP2003/010380 WO2004019393A1 (ja) | 2002-08-23 | 2003-08-15 | シリコン膜形成用組成物およびシリコン膜の形成方法 |
| TW092123202A TW200418724A (en) | 2002-08-23 | 2003-08-22 | Composition for forming silicon film and method for forming silicon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002243004A JP4016419B2 (ja) | 2002-08-23 | 2002-08-23 | シリコン膜形成用組成物およびシリコン膜の形成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004087546A JP2004087546A (ja) | 2004-03-18 |
| JP2004087546A5 true JP2004087546A5 (enrdf_load_stackoverflow) | 2005-05-26 |
| JP4016419B2 JP4016419B2 (ja) | 2007-12-05 |
Family
ID=32051879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002243004A Expired - Fee Related JP4016419B2 (ja) | 2002-08-23 | 2002-08-23 | シリコン膜形成用組成物およびシリコン膜の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4016419B2 (enrdf_load_stackoverflow) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004186320A (ja) * | 2002-12-02 | 2004-07-02 | Jsr Corp | シリコン膜形成用組成物および太陽電池 |
| JP4761041B2 (ja) * | 2005-02-23 | 2011-08-31 | ソニー株式会社 | シリコン膜の形成方法 |
| JP4725735B2 (ja) * | 2006-08-25 | 2011-07-13 | Ｊｓｒ株式会社 | ガスバリア用シリカ膜積層フィルムの製造方法 |
| US8632702B2 (en) * | 2007-01-03 | 2014-01-21 | Nanogram Corporation | Silicon/germanium particle inks, doped particles, printing and processes for semiconductor applications |
| DE102007050288A1 (de) * | 2007-10-18 | 2009-04-23 | Otto Hauser | Halbleiterbauteil |
| JP2011192908A (ja) * | 2010-03-16 | 2011-09-29 | Toshiba Corp | ポリシリコン膜の製造方法、太陽電池及び電子デバイス |
| US8895962B2 (en) * | 2010-06-29 | 2014-11-25 | Nanogram Corporation | Silicon/germanium nanoparticle inks, laser pyrolysis reactors for the synthesis of nanoparticles and associated methods |
| JP5921088B2 (ja) * | 2011-05-27 | 2016-05-24 | 帝人株式会社 | 未焼結シリコン粒子膜及び半導体シリコン膜、並びにそれらの製造方法 |
| JP5253561B2 (ja) * | 2011-02-04 | 2013-07-31 | 帝人株式会社 | 半導体デバイスの製造方法、半導体デバイス、並びに分散体 |
| JP6099304B2 (ja) * | 2010-12-10 | 2017-03-22 | 帝人株式会社 | 半導体積層体、半導体デバイス、及びそれらの製造方法 |
| CN103348448A (zh) | 2010-12-10 | 2013-10-09 | 帝人株式会社 | 半导体层叠体、半导体装置，以及它们的制造方法 |
| JP2013105991A (ja) * | 2011-11-16 | 2013-05-30 | Teijin Ltd | 半導体積層体、半導体デバイス、及びそれらの製造方法 |
| TW201307622A (zh) * | 2011-04-15 | 2013-02-16 | Showa Denko Kk | 矽膜之製造方法 |
| JP5676363B2 (ja) * | 2011-05-26 | 2015-02-25 | 国立大学法人広島大学 | 光起電力素子およびその製造方法 |
| CA2752844A1 (en) * | 2011-09-19 | 2013-03-19 | Hydro-Quebec | Method for preparing a particulate of si or siox-based anode material, and material thus obtained |
| JP5818972B2 (ja) * | 2012-03-30 | 2015-11-18 | 帝人株式会社 | 半導体積層体及びその製造方法、半導体デバイスの製造方法、半導体デバイス、ドーパント組成物、ドーパント注入層、並びにドープ層の形成方法 |
| WO2014014057A1 (ja) | 2012-07-20 | 2014-01-23 | 旭化成株式会社 | 半導体膜及び半導体素子 |
| JP7187316B2 (ja) * | 2015-11-03 | 2022-12-12 | カネカ アメリカズ ホールディング，インコーポレイティド | 誘電率の調整によるナノ粒子の分散安定性の制御及び界面活性剤フリーナノ粒子の固有誘電率の決定 |
| SE540184C2 (en) | 2016-07-29 | 2018-04-24 | Exeger Operations Ab | A light absorbing layer and a photovoltaic device including a light absorbing layer |
| WO2018021952A1 (en) | 2016-07-29 | 2018-02-01 | Exeger Operations Ab | A light absorbing layer and a photovoltaic device including a light absorbing layer |
| EP3652763B1 (en) | 2017-07-12 | 2021-03-31 | Exeger Operations AB | A photovoltaic device having a light absorbing layer including a plurality of grains of a doped semiconducting material |
| US10535527B2 (en) * | 2017-07-13 | 2020-01-14 | Applied Materials, Inc. | Methods for depositing semiconductor films |
-
2002
- 2002-08-23 JP JP2002243004A patent/JP4016419B2/ja not_active Expired - Fee Related
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