JP2004083932A - 電解処理装置 - Google Patents
電解処理装置 Download PDFInfo
- Publication number
- JP2004083932A JP2004083932A JP2002242726A JP2002242726A JP2004083932A JP 2004083932 A JP2004083932 A JP 2004083932A JP 2002242726 A JP2002242726 A JP 2002242726A JP 2002242726 A JP2002242726 A JP 2002242726A JP 2004083932 A JP2004083932 A JP 2004083932A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- plating
- electrolytic
- substrate holder
- electric field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 claims abstract description 279
- 230000007246 mechanism Effects 0.000 claims abstract description 6
- 230000005684 electric field Effects 0.000 claims description 54
- 238000012545 processing Methods 0.000 claims description 37
- 239000003566 sealing material Substances 0.000 claims description 26
- 239000011148 porous material Substances 0.000 claims description 22
- 239000012811 non-conductive material Substances 0.000 claims description 12
- 239000008151 electrolyte solution Substances 0.000 claims description 4
- 238000005868 electrolysis reaction Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 abstract description 2
- 238000007747 plating Methods 0.000 description 123
- 239000000243 solution Substances 0.000 description 34
- 238000009713 electroplating Methods 0.000 description 28
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 25
- 229910052802 copper Inorganic materials 0.000 description 25
- 239000010949 copper Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 23
- 238000004140 cleaning Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 17
- 238000005530 etching Methods 0.000 description 16
- 230000002093 peripheral effect Effects 0.000 description 15
- 238000005498 polishing Methods 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 12
- 238000001035 drying Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 238000000866 electrolytic etching Methods 0.000 description 11
- 238000012937 correction Methods 0.000 description 9
- 238000005406 washing Methods 0.000 description 9
- 238000005192 partition Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- -1 polypropylene Polymers 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- 239000004743 Polypropylene Substances 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229920001155 polypropylene Polymers 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000007723 transport mechanism Effects 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 238000007781 pre-processing Methods 0.000 description 2
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical compound NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229920002449 FKM Polymers 0.000 description 1
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical compound [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- LMRFGCUCLQUNCZ-UHFFFAOYSA-N hydrogen peroxide hydrofluoride Chemical compound F.OO LMRFGCUCLQUNCZ-UHFFFAOYSA-N 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
Images
Landscapes
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002242726A JP2004083932A (ja) | 2002-08-22 | 2002-08-22 | 電解処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002242726A JP2004083932A (ja) | 2002-08-22 | 2002-08-22 | 電解処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004083932A true JP2004083932A (ja) | 2004-03-18 |
| JP2004083932A5 JP2004083932A5 (https=) | 2005-08-25 |
Family
ID=32051681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002242726A Withdrawn JP2004083932A (ja) | 2002-08-22 | 2002-08-22 | 電解処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004083932A (https=) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008121062A (ja) * | 2006-11-10 | 2008-05-29 | Ebara Corp | めっき装置及びめっき方法 |
| JP2013040404A (ja) * | 2011-08-15 | 2013-02-28 | Novellus Systems Inc | 半導体電気メッキ装置用のリップシールおよびコンタクト部 |
| US9746427B2 (en) | 2013-02-15 | 2017-08-29 | Novellus Systems, Inc. | Detection of plating on wafer holding apparatus |
| US9988734B2 (en) | 2011-08-15 | 2018-06-05 | Lam Research Corporation | Lipseals and contact elements for semiconductor electroplating apparatuses |
| US10053793B2 (en) | 2015-07-09 | 2018-08-21 | Lam Research Corporation | Integrated elastomeric lipseal and cup bottom for reducing wafer sticking |
| US10066311B2 (en) | 2011-08-15 | 2018-09-04 | Lam Research Corporation | Multi-contact lipseals and associated electroplating methods |
| US10087545B2 (en) | 2011-08-01 | 2018-10-02 | Novellus Systems, Inc. | Automated cleaning of wafer plating assembly |
| US10092933B2 (en) | 2012-03-28 | 2018-10-09 | Novellus Systems, Inc. | Methods and apparatuses for cleaning electroplating substrate holders |
| US10211056B2 (en) | 2014-04-25 | 2019-02-19 | Mitsubishi Electric Corporation | Semiconductor device manufacturing method |
| US10416092B2 (en) | 2013-02-15 | 2019-09-17 | Lam Research Corporation | Remote detection of plating on wafer holding apparatus |
| JP2019163529A (ja) * | 2018-03-20 | 2019-09-26 | 東芝メモリ株式会社 | 電解メッキ装置 |
| US10538855B2 (en) | 2012-03-30 | 2020-01-21 | Novellus Systems, Inc. | Cleaning electroplating substrate holders using reverse current deplating |
| CN111349960A (zh) * | 2018-12-21 | 2020-06-30 | 株式会社荏原制作所 | 用于将液体从基板保持件的密封件除去的方法 |
| CN114308527A (zh) * | 2021-11-09 | 2022-04-12 | 天芯互联科技有限公司 | 一种填胶装置及其填胶方法 |
| KR20220164696A (ko) * | 2021-06-04 | 2022-12-13 | 가부시키가이샤 에바라 세이사꾸쇼 | 도금 장치 |
-
2002
- 2002-08-22 JP JP2002242726A patent/JP2004083932A/ja not_active Withdrawn
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008121062A (ja) * | 2006-11-10 | 2008-05-29 | Ebara Corp | めっき装置及びめっき方法 |
| US10087545B2 (en) | 2011-08-01 | 2018-10-02 | Novellus Systems, Inc. | Automated cleaning of wafer plating assembly |
| US9988734B2 (en) | 2011-08-15 | 2018-06-05 | Lam Research Corporation | Lipseals and contact elements for semiconductor electroplating apparatuses |
| US11512408B2 (en) | 2011-08-15 | 2022-11-29 | Novellus Systems, Inc. | Lipseals and contact elements for semiconductor electroplating apparatuses |
| US10066311B2 (en) | 2011-08-15 | 2018-09-04 | Lam Research Corporation | Multi-contact lipseals and associated electroplating methods |
| JP2013040404A (ja) * | 2011-08-15 | 2013-02-28 | Novellus Systems Inc | 半導体電気メッキ装置用のリップシールおよびコンタクト部 |
| US10435807B2 (en) | 2011-08-15 | 2019-10-08 | Novellus Systems, Inc. | Lipseals and contact elements for semiconductor electroplating apparatuses |
| US12157950B2 (en) | 2011-08-15 | 2024-12-03 | Novellus Systems, Inc. | Lipseals and contact elements for semiconductor electroplating apparatuses |
| US10092933B2 (en) | 2012-03-28 | 2018-10-09 | Novellus Systems, Inc. | Methods and apparatuses for cleaning electroplating substrate holders |
| US10538855B2 (en) | 2012-03-30 | 2020-01-21 | Novellus Systems, Inc. | Cleaning electroplating substrate holders using reverse current deplating |
| US9746427B2 (en) | 2013-02-15 | 2017-08-29 | Novellus Systems, Inc. | Detection of plating on wafer holding apparatus |
| US10416092B2 (en) | 2013-02-15 | 2019-09-17 | Lam Research Corporation | Remote detection of plating on wafer holding apparatus |
| US10211056B2 (en) | 2014-04-25 | 2019-02-19 | Mitsubishi Electric Corporation | Semiconductor device manufacturing method |
| US10053793B2 (en) | 2015-07-09 | 2018-08-21 | Lam Research Corporation | Integrated elastomeric lipseal and cup bottom for reducing wafer sticking |
| US10982346B2 (en) | 2015-07-09 | 2021-04-20 | Lam Research Corporation | Integrated elastomeric lipseal and cup bottom for reducing wafer sticking |
| JP2019163529A (ja) * | 2018-03-20 | 2019-09-26 | 東芝メモリ株式会社 | 電解メッキ装置 |
| CN111349960A (zh) * | 2018-12-21 | 2020-06-30 | 株式会社荏原制作所 | 用于将液体从基板保持件的密封件除去的方法 |
| KR20220164696A (ko) * | 2021-06-04 | 2022-12-13 | 가부시키가이샤 에바라 세이사꾸쇼 | 도금 장치 |
| KR102518086B1 (ko) | 2021-06-04 | 2023-04-06 | 가부시키가이샤 에바라 세이사꾸쇼 | 도금 장치 |
| CN114308527A (zh) * | 2021-11-09 | 2022-04-12 | 天芯互联科技有限公司 | 一种填胶装置及其填胶方法 |
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Legal Events
| Date | Code | Title | Description |
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| A521 | Written amendment |
Effective date: 20050208 Free format text: JAPANESE INTERMEDIATE CODE: A523 |
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| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050208 |
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| A977 | Report on retrieval |
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| A761 | Written withdrawal of application |
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