JP2004079753A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP2004079753A
JP2004079753A JP2002237551A JP2002237551A JP2004079753A JP 2004079753 A JP2004079753 A JP 2004079753A JP 2002237551 A JP2002237551 A JP 2002237551A JP 2002237551 A JP2002237551 A JP 2002237551A JP 2004079753 A JP2004079753 A JP 2004079753A
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JP
Japan
Prior art keywords
substrate
processing
processed
film
processing gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002237551A
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English (en)
Japanese (ja)
Inventor
Mikio Suzuki
鈴木　幹夫
Hiroshi Jinriki
神力　博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2002237551A priority Critical patent/JP2004079753A/ja
Priority to TW092122511A priority patent/TWI235422B/zh
Priority to AU2003254941A priority patent/AU2003254941A1/en
Priority to PCT/JP2003/010376 priority patent/WO2004017397A1/fr
Publication of JP2004079753A publication Critical patent/JP2004079753A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2002237551A 2002-08-16 2002-08-16 半導体装置の製造方法 Pending JP2004079753A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002237551A JP2004079753A (ja) 2002-08-16 2002-08-16 半導体装置の製造方法
TW092122511A TWI235422B (en) 2002-08-16 2003-08-15 Manufacturing method for semiconductor device
AU2003254941A AU2003254941A1 (en) 2002-08-16 2003-08-15 Method for manufacturing semiconductor device
PCT/JP2003/010376 WO2004017397A1 (fr) 2002-08-16 2003-08-15 Procede de fabrication de dispositif a semi-conducteur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002237551A JP2004079753A (ja) 2002-08-16 2002-08-16 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
JP2004079753A true JP2004079753A (ja) 2004-03-11

Family

ID=31884439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002237551A Pending JP2004079753A (ja) 2002-08-16 2002-08-16 半導体装置の製造方法

Country Status (4)

Country Link
JP (1) JP2004079753A (fr)
AU (1) AU2003254941A1 (fr)
TW (1) TWI235422B (fr)
WO (1) WO2004017397A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005259966A (ja) * 2004-03-11 2005-09-22 Mitsui Eng & Shipbuild Co Ltd 薄膜形成方法
JP2006060170A (ja) * 2004-08-24 2006-03-02 Nec Electronics Corp キャパシタおよび半導体装置の製造方法
US8034727B2 (en) 2005-10-14 2011-10-11 Nec Corporation Method and apparatus for manufacturing semiconductor devices

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6537613B1 (en) * 2000-04-10 2003-03-25 Air Products And Chemicals, Inc. Process for metal metalloid oxides and nitrides with compositional gradients
EP1308992A4 (fr) * 2000-08-11 2006-01-18 Tokyo Electron Ltd Dispositif et traitement de substrat

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005259966A (ja) * 2004-03-11 2005-09-22 Mitsui Eng & Shipbuild Co Ltd 薄膜形成方法
JP2006060170A (ja) * 2004-08-24 2006-03-02 Nec Electronics Corp キャパシタおよび半導体装置の製造方法
US8034727B2 (en) 2005-10-14 2011-10-11 Nec Corporation Method and apparatus for manufacturing semiconductor devices

Also Published As

Publication number Publication date
AU2003254941A1 (en) 2004-03-03
TW200409208A (en) 2004-06-01
TWI235422B (en) 2005-07-01
WO2004017397A1 (fr) 2004-02-26

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