AU2003254941A1 - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device

Info

Publication number
AU2003254941A1
AU2003254941A1 AU2003254941A AU2003254941A AU2003254941A1 AU 2003254941 A1 AU2003254941 A1 AU 2003254941A1 AU 2003254941 A AU2003254941 A AU 2003254941A AU 2003254941 A AU2003254941 A AU 2003254941A AU 2003254941 A1 AU2003254941 A1 AU 2003254941A1
Authority
AU
Australia
Prior art keywords
semiconductor device
manufacturing semiconductor
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003254941A
Inventor
Hiroshi Shinriki
Mikio Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2003254941A1 publication Critical patent/AU2003254941A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
AU2003254941A 2002-08-16 2003-08-15 Method for manufacturing semiconductor device Abandoned AU2003254941A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002237551A JP2004079753A (en) 2002-08-16 2002-08-16 Method of manufacturing semiconductor device
JP2002-237551 2002-08-16
PCT/JP2003/010376 WO2004017397A1 (en) 2002-08-16 2003-08-15 Method for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
AU2003254941A1 true AU2003254941A1 (en) 2004-03-03

Family

ID=31884439

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003254941A Abandoned AU2003254941A1 (en) 2002-08-16 2003-08-15 Method for manufacturing semiconductor device

Country Status (4)

Country Link
JP (1) JP2004079753A (en)
AU (1) AU2003254941A1 (en)
TW (1) TWI235422B (en)
WO (1) WO2004017397A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4283140B2 (en) * 2004-03-11 2009-06-24 三井造船株式会社 Thin film formation method
JP2006060170A (en) * 2004-08-24 2006-03-02 Nec Electronics Corp Method for manufacturing capacitor and semiconductor device
JPWO2007043709A1 (en) 2005-10-14 2009-04-23 日本電気株式会社 Semiconductor device manufacturing method and manufacturing apparatus thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6537613B1 (en) * 2000-04-10 2003-03-25 Air Products And Chemicals, Inc. Process for metal metalloid oxides and nitrides with compositional gradients
EP1308992A4 (en) * 2000-08-11 2006-01-18 Tokyo Electron Ltd Device and method for processing substrate

Also Published As

Publication number Publication date
TW200409208A (en) 2004-06-01
TWI235422B (en) 2005-07-01
WO2004017397A1 (en) 2004-02-26
JP2004079753A (en) 2004-03-11

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase