JP2004079569A - Substrate transport apparatus and substrate transport method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate transport apparatus, quite simplified in structure and extremely thin, for easily and steadily supporting a substrate on its side edges, and to provide a substrate transport method using the apparatus. <P>SOLUTION: The substrate transport apparatus comprises substrate side edge support means 12 and 13, each having a support 11 for supporting a substrate 101 at its side edges, a metal body 14 made of a shape memory alloy connected to the substrate side edge support means 12 and 13, and a control means 17 for supplying electric power to the metal body 14 as specified. Joule's heat is generated in the metal body 14 upon supply of electric power by the control means 17 and the substrate side edge support means 12 and 13 are driven by the metal body 14 when it expands and shrinks. The result is a thin fork 100, simplified in structure, not requiring an actuator or the like. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a substrate transfer device and a substrate transfer method, and is particularly suitable when applied to transfer a semiconductor wafer.
[0002]
[Prior art]
Conventionally, as a substrate transfer device that holds and transfers a substrate typified by a semiconductor wafer, a fork using a vacuum chuck, a fork that mounts and transfers a substrate on a guide, a fork that uses non-contact suction, and the like are used. ing.
[0003]
[Problems to be solved by the invention]
However, while a fork using a vacuum chuck is a compact and mature technology, it sucks and holds the substrate by vacuum suction, so that the dust on the suction surface is collected, and the dust is collected on the substrate. Is attached one after another. In addition, the problem of adhesion of dust cannot be avoided because the fork that transports the substrate placed on the guide also has a contact portion with the substrate. On the other hand, a fork using non-contact suction has a problem in that it is non-contact and causes little contamination, but it is difficult to reduce the thickness and the thickness is large, so that a sufficient clearance cannot be secured for a slot of a wafer carrier.
[0004]
The present invention has been made in view of the above problems, has an extremely simple configuration, is extremely thin, avoids adhesion of dust, enables easy and reliable holding on the side surface of a substrate, and has versatility. It is an object of the present invention to provide a substrate transport apparatus and a substrate transport method which realize an increase in reliability and an improvement in reliability.
[0005]
[Means for Solving the Problems]
As a result of intensive studies, the present inventor has reached various aspects of the invention described below.
[0006]
The substrate transfer device of the present invention has a substrate side holding unit having a holding unit for holding a side surface of a substrate, a metal body made of a shape memory alloy connected to the substrate side holding unit, and applying a predetermined power to the metal body. And a control unit for supplying the electric power, wherein the power supply of the control unit generates Joule heat in the metal body, and the expansion and contraction of the metal body drives the substrate side holding unit.
[0007]
In one aspect of the substrate transfer apparatus of the present invention, the substrate side surface holding means further includes a pair of shafts, and a rotation driving unit that rotationally drives each of the shafts, and each of the shafts has a clamp-like shape. And a controller configured to rotate the shaft by the control unit to drive the holding unit and to grip the side surface of the substrate.
[0008]
In one aspect of the substrate transfer device of the present invention, the metal body is in a wire shape, and is wound around the rotation drive unit.
[0009]
In one aspect of the substrate transfer apparatus of the present invention, the control unit controls the amount of power supplied to the metal body to adjust the strength of the holding unit in the state of holding the substrate.
[0010]
In one aspect of the substrate transport apparatus of the present invention, the apparatus further includes substrate main surface holding means for holding the substrate in a non-contact state with the main surface of the substrate.
[0011]
In one aspect of the substrate transfer apparatus of the present invention, the substrate main surface holding means supplies a gas to the substrate main surface to generate a negative pressure, and suction-holds the substrate in a non-contact state.
[0012]
In one aspect of the substrate transfer apparatus of the present invention, the pressure state at the suction holding position of the substrate is monitored, and if the pressure is negative, the substrate is in the vicinity of the substrate main surface holding means; The apparatus further includes a substrate detection unit that recognizes that the substrate is absent near the substrate main surface holding unit and determines whether the substrate can be held.
[0013]
In one aspect of the substrate transport apparatus of the present invention, the apparatus further includes substrate positioning means for rotating the held substrate, detecting a detection unit provided on the substrate, and performing positioning.
[0014]
In one aspect of the substrate transfer apparatus of the present invention, the apparatus further includes a substrate recognizing means for judging the presence or absence of the substrate near the tip of the substrate side holding means based on the presence or absence of light transmission.
[0015]
In one aspect of the substrate transport apparatus of the present invention, the substrate transport device further includes a reversing means for arbitrarily reversing the front and back of the substrate, and holds the substrate with one of the front and back surfaces as a main surface.
[0016]
The substrate transfer method according to the present invention is characterized in that a predetermined power is supplied to a metal body made of a shape memory alloy, Joule heat is generated, and the metal body is expanded and contracted to rotate a clamp-shaped holding unit, thereby causing a side surface of the substrate to rotate. Is characterized by being held and held.
[0017]
In one aspect of the substrate transfer method of the present invention, while holding and holding the side surface of the substrate, a gas is supplied to the main surface of the substrate to generate a negative pressure, and the substrate is brought into a non-contact state. Hold by suction.
[0018]
In one aspect of the substrate transfer method of the present invention, the pressure state at the suction holding position of the substrate is monitored, and if the pressure is negative, the substrate is in the vicinity of the substrate main surface holding means; Recognizing that the substrate is absent near the substrate main surface holding means, it is determined whether the substrate can be held.
[0019]
In one aspect of the substrate transfer method of the present invention, the held substrate is rotated, and a detection unit provided on the substrate is detected to perform positioning.
[0020]
In one aspect of the substrate transfer method of the present invention, the presence or absence of the substrate near the tip of the substrate side holding means is determined by the presence or absence of light transmission.
[0021]
In one aspect of the substrate transfer method of the present invention, the front and back surfaces of the substrate are arbitrarily reversed, and the substrate is held with one of the front and back surfaces as a main surface.
[0022]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, specific embodiments of a substrate transfer apparatus and a transfer method thereof according to the present invention will be described with reference to the accompanying drawings. In the embodiments of the present invention, an embodiment using a semiconductor wafer as a “substrate” will be described. However, the “substrate” according to the present invention is not limited to this semiconductor wafer. It is also possible to apply to a substrate or the like.
[0023]
FIG. 1 is a schematic configuration diagram showing an embodiment of a fork 100 to which a substrate transfer device according to the present invention is applied.
The fork 100 according to the present embodiment is configured to be connected to the tip of an arm of an articulated transfer robot that transfers the semiconductor wafer 101. For example, the fork 100 holds and takes out the semiconductor wafer 101 stored in a carrier. , For transporting to a processing chamber where the next step is performed.
[0024]
The fork 100 has a substrate chuck mechanism on which a semiconductor wafer 101 to be transferred is disposed, and a clamp 11 for holding a side surface of the semiconductor wafer 101 by expansion and contraction by power supply to a wire 14 of a shape memory alloy; A substrate suction mechanism (substrate main surface holding means) for holding the main surface in a non-contact state, a mapping mechanism for detecting the presence or absence of the semiconductor wafer 101 to be conveyed, and a notch serving as a reference for the semiconductor wafer 101 Or, it is also provided with an orientation flat positioning mechanism and a reversing mechanism.
[0025]
The substrate chuck mechanism is provided with shafts 12 made of an insulator on both sides of the flat plate 50. Clamps 11 for holding the side surfaces of the semiconductor wafer 101 are provided at two places on each shaft 12, and the ends are respectively provided at the ends. A cylindrical rotor 13 made of a conductor such as aluminum is provided. A wire 14 made of a shape memory alloy is wound around each cylindrical rotor 13 so as to extend between the cylindrical rotors 13. Each end of the wire 14 is connected to one end of each spring 15 having the other end fixed. Each is connected. A power supply 17 for supplying electric power (voltage) to the wire 14 is connected to the other end of each spring 15 to constitute a substrate chuck mechanism.
[0026]
FIG. 2 is a sectional configuration diagram of the fork 100 in the clamp 11.
As shown in FIG. 2, the clamps 11 are provided at two positions on each of the shafts 12 disposed on the fork 100, and are rotated from the horizontal position to the vertical position with respect to the semiconductor wafer 101 by rotating the shafts 12. And stands on the side, and holds the side surface of the semiconductor wafer 101. Further, the flat plate 50 is formed with a notch at a portion where the clamp 11 is provided so that the clamp 11 can be driven to rotate by 90 ° or more.
[0027]
Here, the configuration of the cylindrical rotor 13 that rotates the clamp 11 via the shaft 12 and its surroundings will be described. FIG. 3 is a sectional configuration diagram of the fork 100 in the cylindrical rotor 13.
[0028]
Wires 14 made of a shape memory alloy wound around the cylindrical rotors 13 are fixedly connected to the upper portions of the respective cylindrical rotors 13 between the respective cylindrical rotors 13 while being stretched without loosening. A spring 15 having one end connected to the lower part of the cylindrical rotor 13 is fixed at the other end with a screw 16. In a normal state where no voltage is applied from the power supply 17, the wire 14 and the spring 15 are configured so that the cylindrical rotor 13 does not move. That is, starting from each of the fixed screws 16, the spring 15, the cylindrical rotor 13, and the wire 14 are integrally formed to form a substantial loop. In addition, since one wire 14 is disposed between the cylindrical rotors 13, if the wire 14 is cut, the chucking operation of the semiconductor wafer 101 cannot be performed completely. Therefore, it is possible to avoid a problem of the semiconductor wafer 101 due to a malfunction of the chuck.
[0029]
The cylindrical rotor 13 is formed of a conductor such as aluminum, and a shaft 12 made of an insulator penetrates the center of the cylindrical rotor 13. The wire 14 stretched between the cylindrical rotors 13 is made of a titanium-nickel-based shape memory alloy and has a predetermined wiring resistance. Of the conductor.
[0030]
Hereinafter, a mechanism for chucking the semiconductor wafer 101 by the fork 100 will be described.
To perform the chucking operation, a voltage is applied from the power supply 17 to the screw 16. When a voltage is applied from the power supply 17 to the screw 16, a current flows through the wire 14 made of the shape memory alloy via the spring 15 and the cylindrical rotor 13. Here, the current flowing through the wire 14 flows due to the wiring resistance of the wire 14 because the resistance of the components of the spring 15 and the cylindrical rotor 13 is smaller than the resistance of the shape memory alloy. Further, since the shaft 12 is formed of an insulator, the shaft 12 is in a closed circuit, so that no current leaks to other parts.
[0031]
When an electric current flows through the wire 14 made of a shape memory alloy, Joule heat is generated, and the heat generated causes the wire 14 to contract. When the wire 14 contracts, each of the cylindrical rotors 13 is pulled inward to rotate, and the shaft 12 rotates toward the inside of the fork 100 accordingly. When the shaft 12 rotates toward the inside of the fork 100, the clamp 11 can be driven to hold the side surface of the semiconductor wafer 101 as shown in FIG. In this embodiment, the current is supplied to the wire 14 by the voltage from the power supply 17 via the spring 15 and the cylindrical rotor 13, but the power supply 17 is directly connected to both ends of the wire 14 to supply the current. It is also possible to configure so that
[0032]
Further, in order to drive the cylindrical rotor 13 to release the chuck of the semiconductor wafer 101, the application of the voltage from the power supply 17 is terminated. When the application of the voltage from the power supply 17 is stopped, the current stops flowing through the wire 14 made of the shape memory alloy, and the generation of the Joule heat associated therewith stops. Then, upon cooling, the wire 14 undergoes linear expansion and returns to its original length. When the wire 14 is stretched, the wire 14 stretched between the cylindrical rotors 13 becomes slack, but the spring 15 supported at the lower part of the cylindrical rotor 13 can pull the slack length. Then, the respective cylindrical rotors 13 are driven outward to move the clamps 11 to the original positions via the shafts 12. Thereby, the chuck of the semiconductor wafer 101 can be released.
[0033]
The substrate suction mechanism includes a substrate suction unit 21 that performs non-contact suction on the semiconductor wafer 101, a gas supply pipe 22 that communicates with the substrate suction unit 21, and nitrogen (N ₂ ) or a gas supply unit 23 for supplying argon (Ar), a pressure monitoring sensor 24 for monitoring the pressure of the substrate suction unit 21, and a pipe 25 connecting the substrate suction unit 21 and the pressure monitoring sensor 24. It is configured.
[0034]
Here, the principle of the non-contact suction of the semiconductor wafer 101 and the detection of the position of the semiconductor wafer 101 by the pressure monitoring sensor 24 will be described.
[0035]
4A and 4B are schematic diagrams illustrating the principle of non-contact suction of the semiconductor wafer 101. FIG. 4A is a cross-sectional view of the substrate suction unit 21, and FIG. The characteristic diagram is shown.
As shown in FIG. 4A, the substrate suction unit 21 is provided with a branch plate 26 that branches the nitrogen or argon gas supplied from the gas supply unit 23 through the gas supply pipe 22 into two. A pipe 25 connected to the pressure monitoring sensor 24 passes through the branch plate 26.
[0036]
When gas is discharged from the substrate suction unit 21 when the semiconductor wafer 101 is at a position on the substrate suction unit 21 in the vicinity of about 0.2 mm to 0.8 mm, the so-called Bernoulli's theorem states that the gas on the gas suction unit 21 The area A is in a negative pressure state. Thereby, the semiconductor wafer 101 can be sucked. Further, the area B on the gas suction section 21 has a positive pressure. FIG. 4B shows a pressure distribution in the substrate suction section 21 at this time.
[0037]
On the other hand, consider a case where the semiconductor wafer 101 does not exist near the substrate suction unit 21. Here, the case where there is no vicinity is a case where there is a distance of 1 mm or more with respect to the semiconductor wafer 101, for example. In this case, the area A described above is at atmospheric pressure due to the discharge of gas from the substrate suction unit 21.
[0038]
The pressure monitoring sensor 24 monitors whether the pressure in the area A on the substrate suction part 21 is negative pressure or atmospheric pressure via the pipe 25. If the pressure is negative, it can be determined that the semiconductor wafer 101 is present in the vicinity and is at a position where chucking is possible, while if the pressure is atmospheric pressure, the semiconductor wafer 101 is not present in the vicinity, It can be determined that the semiconductor wafer 101 is not at a position where chucking is possible.
[0039]
The notch / orientation flat aligning mechanism includes a rotation mechanism for rotating the semiconductor wafer 101 sucked in a non-contact manner and a notch / orientation flat detection mechanism for detecting the position of the notch or the orientation flat of the semiconductor wafer 101 rotated by the rotation mechanism. Done.
[0040]
The rotation mechanism includes a gas discharge unit 31 that supplies gas from the oblique direction to the semiconductor wafer 101 and rotates the semiconductor wafer 101, a gas supply pipe 32 communicating with the gas discharge unit 31, a gas discharge unit 31. And a gas supply unit 33 for supplying nitrogen or argon through a gas supply pipe 32. Here, since the gas discharged from the gas discharge unit 31 is supplied from a separate line from the gas supply unit 23, on / off control of the discharge is performed independently of the gas discharged from the substrate suction unit 21. Can be performed. Further, the fork 100 of the present embodiment is provided with two gas discharge units 31 for discharging a gas for rotating the semiconductor wafer 101, but may be configured by providing, for example, four gas discharge units 31. Good.
[0041]
The notch / oriflat detection mechanism is performed by the position detection sensor 41. The position detection sensor 41 is disposed above and below the fork 100 with the semiconductor wafer 101 interposed therebetween, and can detect the position of a notch or orientation flat for alignment in a processing step provided on the semiconductor wafer 101 by transmission. Has become.
[0042]
The mapping mechanism is performed by a mapping sensor 51 disposed at the curved distal end portions at both ends of the fork 100. As shown in FIG. 5, two mapping sensors 51 provided at the tip of the fork 100 allow the semiconductor wafer 101 to move when the fork 100 is driven to the carrier 102 in which the plurality of semiconductor wafers 101 are stored. The presence or absence can be detected by the presence or absence of light transmission. That is, if the semiconductor wafer 101 is near the tip of the fork 100, the light is blocked by this, and if not, the light is transmitted. With this mapping mechanism, it is also possible to detect the absent position of the semiconductor wafer 101 on the carrier 102 one by one, and to count the total number of semiconductor wafers stored in the carrier 102.
[0043]
The reversing mechanism is for reversing the fork 100 itself up and down. Since the main surface of the semiconductor wafer 101 can be held in a non-contact manner by the substrate suction mechanism, by having the reversing mechanism, both the front and back surfaces of the semiconductor wafer 101 can be suctioned and conveyed as the main surfaces. it can.
[0044]
Next, a procedure for transferring the semiconductor wafer 101 stored in the carrier to the processing chamber will be described.
[0045]
First, when the fork 100 moves before the carrier, the mapping mechanism is driven. In this mapping, as described above, the presence / absence of the semiconductor wafer 101 is detected by performing transmission detection using the two mapping sensors 51 provided at the tip of the fork 100.
[0046]
Subsequently, when the semiconductor wafer 101 is detected by the mapping sensor 51, the fork 100 moves on the semiconductor wafer 101, and performs position detection for performing non-contact suction and temporary chuck of the semiconductor wafer 101. Here, the temporary chuck is performed because it is necessary to rotate the semiconductor wafer 101 in order to detect the notch / orientation flat position of the semiconductor wafer 101 thereafter. In addition, the non-contact suction is performed by suction using the Bernoulli's theorem by discharging the gas from the substrate suction unit 21 as described above, and the position detection for performing the temporary chuck is performed by the pressure of the substrate suction unit 21. Is detected by the pressure monitoring sensor 24. If the pressure of the substrate suction unit 21 is a negative pressure by the pressure monitoring sensor 24, the semiconductor wafer 101 is located in the vicinity where temporary chucking is possible.
[0047]
Subsequently, after the pressure monitoring sensor 24 detects that the semiconductor wafer 101 is at a position where chucking is possible, a DC voltage or a pulse voltage is applied from the power supply 17 to drive the substrate chucking mechanism. When a predetermined voltage is applied from the power supply 17, a current flows through the shape memory alloy wire 14 through the cylindrical rotor 13 made of a conductor such as aluminum. Here, the wire 14 is made of a titanium-nickel based shape memory alloy and has a predetermined wiring resistance. The current flowing through the wire 14 flows from a power source 17 via a spring 15 connected to the cylindrical rotor 13. Since the spring 15 is formed of an iron-based metal, the shape memory of the wire 14 itself is actually stored. Determined by the resistance of the alloy.
[0048]
When an electric current flows through the wire 14, Joule heat is generated, and the wire 14 contracts in a range of about 0 to 5% depending on the magnitude of the generated heat. When the wire 14 contracts, each cylindrical rotor 13 rotates toward the inside of the fork 100. When the cylindrical rotor 13 rotates, the clamp 11 is driven via the shaft 12 from a horizontal position to a position for holding the side surface of the semiconductor wafer 101. Since the driving amount of the clamp 11 can be controlled by the magnitude of the voltage from the power supply 17, the strength of the chuck with respect to the semiconductor wafer 101 can be controlled. Here, the voltage applied from the power supply 17 is lower than the voltage of the complete chuck performed later because of the temporary chuck.
[0049]
Subsequently, after the semiconductor wafer 101 is temporarily chucked, a nitrogen or argon gas is supplied from the gas supply unit 33 and discharged from the gas discharge unit 31 to the semiconductor wafer 101 in an oblique direction, and the semiconductor wafer 101 is rotated. . Then, the position of the notch or the orientation flat of the semiconductor wafer 101 is detected by a position detection sensor 41 provided on the surface of the fork 100 on the circumference of the semiconductor wafer 101. Immediately after the notch or the orientation flat is detected by the position detection sensor 41, the supply of the gas from the gas supply unit 33 is terminated, and the rotation of the semiconductor wafer 101 is stopped.
[0050]
Subsequently, after the alignment of the notch or the orientation flat of the semiconductor wafer 101 is completed, the semiconductor wafer 101 that has been temporarily chucked is completely chucked. In order to perform this complete chuck, a voltage higher than the voltage at the time of the temporary chuck is applied from the power supply 17. Due to the voltage from the power supply 17, a larger current flows through the wire 14 than at the time of the temporary chuck. As a result, the contraction rate of the wire 14 also increases, so that the driving amount of the clamp 11 can be increased, and the semiconductor wafer 101 can be completely chucked.
[0051]
Subsequently, the semiconductor wafer 101 chucked by the fork 100 is transferred from the carrier to a predetermined position in the processing chamber. After the semiconductor wafer 101 is transported, the supply of the gas from the gas supply unit 23 ends, and the suction of the semiconductor wafer 101 ends.
[0052]
Subsequently, the voltage application from the power supply 17 is terminated, and the current application to the wire 14 made of the shape memory alloy is terminated. Along with this, the length of the contracted wire 14 returns to its original length even after linear expansion, and the clamp 11 can be driven to release the chuck of the semiconductor wafer 101.
[0053]
Through the above operations, the semiconductor wafer 101 stored in the carrier 102 can be transferred to the processing chamber.
[0054]
According to the present embodiment, Joule heat is generated by supplying power to the wire 14 made of the shape memory alloy, and the clamp 11 that chucks the semiconductor wafer 101 can be driven by the expansion and contraction of the wire 14 due to the generated Joule heat. Therefore, it is possible to provide a simple and thin fork 100 without installing an actuator or the like.
[0055]
Further, non-contact adsorption of the semiconductor wafer 101 is realized by utilizing the effect of Bernoulli's theorem by discharging the gas from the substrate suction unit 21, so that the semiconductor wafer 101 can be transported without causing particles to adhere thereto. At the same time, the mechanism of the lift pins provided at the transfer destination for placing the semiconductor wafer 101 can be omitted. Further, by installing the reversing mechanism on the fork 100, the semiconductor wafer 101 can be conveyed from both the front surface and the back surface, so that the degree of freedom of conveyance can be improved.
[0056]
In addition, since the semiconductor wafer 101 is rotated by supplying the gas from the gas discharge unit 31 to the semiconductor wafer 101 in an oblique direction and the position detection sensor 41 for detecting the position of the notch / orientation flat of the rotated semiconductor wafer 101 is provided. The trouble of positioning in the processing chamber for performing the next step can be omitted.
[0057]
Further, since the mapping sensor 51 is provided at the tip of the fork 100, the presence or absence of the semiconductor wafer 101 transferred from the carrier can be confirmed. Further, processing such as counting the number of semiconductor wafers 101 stored in the carrier can be performed.
[0058]
【The invention's effect】
ADVANTAGE OF THE INVENTION According to this invention, the board | substrate conveyance apparatus and board | substrate conveyance which enable it to hold | maintain the side surface of a board | substrate easily and reliably with a very simple structure, and to realize the increase in versatility and the improvement of reliability. A method can be provided.
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram showing a fork to which a substrate transfer device according to the present invention is applied.
FIG. 2 is a sectional configuration diagram of a fork in a clamp.
FIG. 3 is a sectional configuration diagram of a fork in a cylindrical rotor.
FIG. 4 is a schematic diagram illustrating the principle of suction of a semiconductor wafer by non-contact.
FIG. 5 is a schematic diagram illustrating a mapping mechanism.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 11 Clamp 12 Shaft 13 Cylindrical rotor 14 Wire 15 Spring 16 Screw 17 Power supply 21 Substrate suction part 22, 32 Gas supply pipe 23, 33 Gas supply part 24 Pressure monitoring sensor 25 Pipe 26 Branch plate 31 Gas discharge part 41 Position detection sensor 50 Flat plate 51 Mapping sensor

Claims (16)

Substrate side surface holding means having a holding portion for holding the side surface of the substrate,
A metal body made of a shape memory alloy connected to the substrate side holding means,
Control means for supplying a predetermined power to the metal body,
A substrate transport apparatus, wherein Joule heat is generated in the metal body by power supply from the control means, and the substrate side holding means is driven by expansion and contraction of the metal body. The substrate side surface holding means further includes a pair of shafts, and a rotation driving unit that rotationally drives each of the shafts, wherein each of the shafts is provided with the clamp-shaped holding unit,
2. The substrate transport apparatus according to claim 1, wherein the control unit rotates the shaft to drive the holding unit to grip a side surface of the substrate. 3. The substrate transfer device according to claim 2, wherein the metal body has a wire shape and is wound around the rotation drive unit. The substrate according to any one of claims 1 to 3, wherein the control unit adjusts the strength of the substrate holding state of the holding unit by controlling an amount of electric power supplied to the metal body. Transport device. The substrate transfer device according to any one of claims 1 to 4, further comprising a substrate main surface holding unit configured to hold the substrate in a non-contact state with the main surface of the substrate. 6. The substrate transport according to claim 5, wherein the substrate main surface holding unit supplies a gas to the substrate main surface to generate a negative pressure, and suction-holds the substrate in a non-contact state. apparatus. The pressure state at the suction holding position of the substrate is monitored, and if the pressure is negative, the substrate is in the vicinity of the substrate main surface holding unit; if the pressure is atmospheric pressure, the substrate is in the vicinity of the substrate main surface holding unit. 7. The substrate transfer apparatus according to claim 6, further comprising a substrate detection unit that recognizes the absence and determines whether the substrate can be held. 8. The apparatus according to claim 1, further comprising: a substrate positioning unit configured to rotate the held substrate, detect a detection unit provided on the substrate, and perform positioning. 9. Substrate transfer device. The substrate transfer apparatus according to claim 1, further comprising a substrate recognition unit configured to determine the presence or absence of the substrate in the vicinity of the tip of the substrate side surface holding unit based on the presence or absence of light transmission. 10. The substrate transport according to claim 1, further comprising a reversing means for arbitrarily reversing the front and back of the substrate, wherein the substrate is held by using one of the front and back surfaces as a main surface. apparatus. A substrate transport method for holding and transporting a substrate,
A predetermined electric power is supplied to a metal body made of a shape memory alloy to generate Joule heat, and the metal body is expanded and contracted to rotate a clamp-shaped holding portion, thereby holding and holding the side surface of the substrate. A substrate transfer method characterized by the above-mentioned. The method according to claim 1, wherein a side surface of the substrate is gripped and held, and a gas is supplied to a main surface of the substrate to generate a negative pressure, and the substrate is suction-held in a non-contact state. 12. The substrate transfer method according to item 11. The pressure state at the suction holding position of the substrate is monitored, and if the pressure is negative, the substrate is in the vicinity of the substrate main surface holding unit; if the pressure is atmospheric pressure, the substrate is in the vicinity of the substrate main surface holding unit. The method according to claim 12, further comprising recognizing the absence and determining whether the substrate can be held. 14. The substrate transfer method according to claim 11, wherein the held substrate is rotated, and a detection unit provided on the substrate is detected to perform positioning. The method according to any one of claims 11 to 14, wherein the presence or absence of the substrate near the tip of the substrate side holding means is determined based on the presence or absence of light transmission. The substrate transport method according to any one of claims 11 to 15, wherein the front and rear surfaces of the substrate are arbitrarily reversed, and the substrate is held using one of the front and rear surfaces as a main surface.

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