JP2919837B2 - Wafer carrier - Google Patents
Wafer carrierInfo
- Publication number
- JP2919837B2 JP2919837B2 JP63054359A JP5435988A JP2919837B2 JP 2919837 B2 JP2919837 B2 JP 2919837B2 JP 63054359 A JP63054359 A JP 63054359A JP 5435988 A JP5435988 A JP 5435988A JP 2919837 B2 JP2919837 B2 JP 2919837B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- transfer arm
- semiconductor plate
- semiconductor
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
【発明の詳細な説明】 ［目次］ 概要 産業上の利用分野 従来の技術 発明が解決しようとする問題点 問題点を解決するための手段（第１図） 作用 実施例 一実施例 拡張 発明の効果 ［概要］ ウエーハを保持し搬送するウエーハ搬送具に関し、 確実にウエーハを保持でき、かつ、大きく加減速し高
速搬送してもウエーハが位置ずれしたり、ウエーハが損
傷したりすることがなく、さらに、真空中でもウエーハ
を確実に保持できるようにすることを目的とし、 ウエーハ搬送アームと、該ウエーハ搬送アームに固定
された半導体板と、該半導体板のウエーハ搬送アーム側
の面に接する、互いに離れた２つ以上の電極と、を備え
て構成する。Detailed Description of the Invention [Table of Contents] Overview Industrial application Field of the Invention Problems to be Solved by the Invention Means for Solving the Problems (FIG. 1) Action Embodiment One Embodiment Expansion Effect of the Invention [Summary] Regarding a wafer carrier that holds and transports a wafer, the wafer can be securely held, and even if the wafer is greatly accelerated and decelerated and transported at high speed, the wafer is not displaced or the wafer is damaged. A wafer transfer arm, a semiconductor plate fixed to the wafer transfer arm, and a wafer transfer arm, which are in contact with a surface of the semiconductor plate on the wafer transfer arm side, which are separated from each other. And two or more electrodes.
［産業上の利用分野］ 本発明は、ウエーハを保持し搬送するウエーハ搬送具
に関する。[Industrial Application Field] The present invention relates to a wafer carrier that holds and transports a wafer.
［従来の技術］ 作業時間を短縮化するために、ウエーハの高速搬送化
が強く要請されている。[Prior Art] In order to reduce the working time, there is a strong demand for high-speed transfer of wafers.
従来のウエーハ搬送具は、第４図に示す如く、ウエー
ハ搬送アーム１の先端部に、凹状のトレイ10が設けられ
て構成されており、これにウエーハ６を載せて保持し搬
送していた。As shown in FIG. 4, the conventional wafer transfer tool is configured such that a concave tray 10 is provided at the tip of a wafer transfer arm 1, and a wafer 6 is placed on the tray 10 and held and transferred.
また、他のウエーハ搬送具は、第５図に示す如く、ウ
エーハ搬送アーム１の先端部に、吸気口11、11が設けら
れて構成されており、ウエーハ６を負圧吸引して保持し
搬送していた。As shown in FIG. 5, another wafer transfer tool is provided with suction ports 11, 11 at the tip of a wafer transfer arm 1, and holds and transfers the wafer 6 by suctioning the wafer 6 under negative pressure. Was.
特開昭59−188135号公報に開示されるように、本願発
明者はジョンセン−ラーベック（Johnsen−rahbeck）効
果を用いた半導体基板吸着方法を案出した。この方法で
用いられている吸着装置は、２つの平面電極（金属又は
半導体）間に電圧を印加して、被吸着物である半導体基
板を吸着するものである。As disclosed in JP-A-59-188135, the present inventor has devised a method for adsorbing a semiconductor substrate using the Johnsen-rahbeck effect. The adsorption device used in this method applies a voltage between two planar electrodes (metal or semiconductor) to adsorb a semiconductor substrate as an object to be adsorbed.
［発明が解決しようとする問題点］ しかし、第４図に示すウエーハ搬送具８は、トレイ10
の凹状部内径がウエーハ外径よりやや大きいため、高速
搬送する場合には、加減速時、ウエーハが位置ずれした
り、凹部内壁に衝突してウエーハが欠けたり、ウエーハ
がトレイから飛び出して落下することもあった。[Problems to be Solved by the Invention] However, the wafer carrier 8 shown in FIG.
Because the inner diameter of the concave portion is slightly larger than the outer diameter of the wafer, when carrying at high speed, the wafer may shift during acceleration or deceleration, the wafer may be chipped by colliding with the inner wall of the recess, or the wafer may jump out of the tray and fall. There were things.
また、第５図に示すウエーハ搬送具９の場合は、大気
中で使用する場合は有効であるが、真空内では使用でき
ない。Further, the wafer transfer tool 9 shown in FIG. 5 is effective when used in the atmosphere, but cannot be used in a vacuum.
上記公報の装置は、真空内で使用できるが、平面電極
への電圧印加をオフにしても吸着力が残存して、容易に
被吸着物を電極板から取り外すことができない。Although the apparatus disclosed in the above publication can be used in a vacuum, even if the voltage application to the flat electrode is turned off, the suction force remains, and the object to be sucked cannot be easily removed from the electrode plate.
この装置をウエーハ搬送具に適用するには、この取り
外しを容易にする必要がある。このために吸着用印加電
圧を低くすると、吸着力が弱くなるので、この装置を高
速のウエーハ搬送具に適用すると、その加減速時に上述
のようなウエーハの位置ずれや落下が生ずる原因とな
る。In order to apply this device to a wafer carrier, it is necessary to facilitate its removal. For this reason, if the applied voltage for suction is reduced, the suction force is weakened. Therefore, if this apparatus is applied to a high-speed wafer carrier, the above-mentioned wafer position shift or drop occurs during acceleration / deceleration.
本発明の目的は、上記問題点に鑑み、ウエーハを確実
に保持でき、大きく加減速して高速搬送する場合でもウ
エーハが位置ずれしたり、損傷したりすることがなく、
かつ、真空中でもウエーハを確実に保持、搬送できるウ
エーハ搬送具を提供することにある。SUMMARY OF THE INVENTION In view of the above problems, the object of the present invention is to be able to securely hold a wafer, and even when carrying out high-speed conveyance with large acceleration / deceleration, the wafer is not displaced or damaged,
Another object of the present invention is to provide a wafer transfer tool capable of securely holding and transferring a wafer even in a vacuum.
［問題点を解決するための手段］ 第１図は本発明の原理構成図である。[Means for Solving the Problems] FIG. 1 is a block diagram showing the principle of the present invention.
図中、１はウエーハ搬送アームであり、図示しない駆
動装置により移動される。In the figure, reference numeral 1 denotes a wafer transfer arm, which is moved by a driving device (not shown).
２は半導体板であり、ウエーハ搬送アーム１に固定さ
れている。Reference numeral 2 denotes a semiconductor plate, which is fixed to the wafer transfer arm 1.
３、３は互いに離れた１対の電圧印加用電極であり、
半導体板２の裏面に接している。Reference numerals 3 and 3 denote a pair of voltage applying electrodes separated from each other,
It is in contact with the back surface of semiconductor plate 2.
［作用］ 電極３、３間に電圧を印加すると、半導体板２の表面
に電荷が分布する。静電誘導により、半導体板２の表面
に接するウエーハには、該電荷と反対極性の電荷が分布
する。[Operation] When a voltage is applied between the electrodes 3, 3, electric charges are distributed on the surface of the semiconductor plate 2. Due to the electrostatic induction, charges of the opposite polarity to the charges are distributed on the wafer in contact with the surface of the semiconductor plate 2.
したがって、半導体板２とウエーハとの間には、ジョ
ンセン−ラーベック（Johnsen−rahbeck）効果による静
電吸引力が発生し、ウエーハが搬送アームに保持され
る。Therefore, an electrostatic attraction force is generated between the semiconductor plate 2 and the wafer due to the Johnsen-rahbeck effect, and the wafer is held by the transfer arm.
また、半導体板２が１枚であるので、電極間への電圧
印加をオフにすると、半導体板２内の正と負の電荷が中
和して、ウエーハを半導体板２から容易に取り外すこと
ができる。このために、吸着用印加電圧を高くしてウエ
ーハ搬送時の吸着力を充分なものにすることができる。Further, since the number of the semiconductor plates 2 is one, if the voltage application between the electrodes is turned off, the positive and negative charges in the semiconductor plates 2 are neutralized, and the wafer can be easily removed from the semiconductor plates 2. it can. For this reason, the applied voltage for suction can be increased to make the suction force at the time of wafer transfer sufficient.
［実施例］ （１）一実施例 第２図は本発明の一実施例に係るウエーハ搬送具の要
部斜視図である。Embodiment (1) One Embodiment FIG. 2 is a perspective view of a main part of a wafer carrier according to one embodiment of the present invention.
図中、1Aはウエーハ搬送アームであり、例えばアルミ
ニウム製である。In the figure, reference numeral 1A denotes a wafer transfer arm, which is made of, for example, aluminum.
2Aは半導体板であり、例えば比抵抗108〜９Ω・cm、
幅30mm、奥行30mm、厚さ1mmのSiC板である。2A is a semiconductor plate, for example, a specific resistance of 10 8 to 9 Ω · cm,
Width 30 mm, depth 30 mm, an S i C plate having a thickness of 1 mm.
５は絶縁板であり、幅及び奥行は半導体板2Aと同一で
あって、ウエーハ搬送アーム1aの先端上面に接着されて
いる。Reference numeral 5 denotes an insulating plate having the same width and depth as the semiconductor plate 2A, and is adhered to the upper surface of the tip of the wafer transfer arm 1a.
また、3A、3Aは電極板であり、例えば幅10mm、奥行20
mmの金属膜で形成され、半導体板2Aの一側面に無電解メ
ッキ等の手法によってパターン形成される。電極膜3A、
3A間の距離ｄは、例えば5mmである。3A and 3A are electrode plates, for example, a width of 10 mm and a depth of 20 mm.
It is formed of a metal film having a thickness of mm, and is patterned on one side surface of the semiconductor plate 2A by a method such as electroless plating. Electrode film 3A,
The distance d between 3A is, for example, 5 mm.
４、４は電気リード線であり、図示しない電圧供給源
と電極板3A、3A間を接続する。Reference numerals 4 and 4 denote electric leads for connecting a voltage supply source (not shown) to the electrode plates 3A and 3A.
上記の如く構成されたウエーハ搬送具13において、電
圧供給源より電極3A、3A間に電圧を印加し、第３図に示
す如く、ウエーハ６を静電吸着して保持する。上記具体
的数値の構成で、電極板3A、3A間に直流電圧400Vを印加
し、直径６インチ、厚さ0.6mmウエーハ６の吸着力を測
定したところ、400gf/cm2もあった。またこのときの電
流値は、数十μＡしかなかった。In the wafer carrier 13 configured as described above, a voltage is applied between the electrodes 3A from the voltage supply source, and the wafer 6 is electrostatically attracted and held as shown in FIG. With the configuration of the above specific numerical values, when a DC voltage of 400 V was applied between the electrode plates 3A and 3A and the suction force of the wafer 6 having a diameter of 6 inches and a thickness of 0.6 mm was measured, it was 400 gf / cm 2 . The current value at this time was only several tens μA.
このような半導体板の代わりに誘電体板を用いること
も考えられるが、この場合の静電吸着力は数10g/cm2程
度しか得られず、ジョンセンラーベック効果を利用した
本実施例のものと比べると格段の差異があり、効果が著
しい。It is conceivable to use a dielectric plate instead of such a semiconductor plate, but in this case, an electrostatic attraction force of only about several tens g / cm 2 can be obtained, and the present embodiment using the Johnsen-Rahbek effect is used. There is a remarkable difference compared to the one, and the effect is remarkable.
（２）拡張 なお、本発明は他にも種々の変形例が含まれる。(2) Extension The present invention includes various other modifications.
例えば、上記実施例では搬送アームをアルミニウムで
構成した場合を説明したが、搬送アームを絶縁材料で構
成すれば、絶縁板５が不要になる。For example, in the above embodiment, the case where the transfer arm is made of aluminum is described. However, if the transfer arm is made of an insulating material, the insulating plate 5 becomes unnecessary.
また、第５図に示す如く、ウエーハ位置決め用の円弧
状段差部を搬送アームに形成してもよい。In addition, as shown in FIG. 5, an arc-shaped step for positioning the wafer may be formed on the transfer arm.
さらに、電極板に印加する電圧は吸引力の点で直流の
方が好ましいが、商用周波数程度の低周波数であれば、
交流であってもよい。Furthermore, the voltage applied to the electrode plate is preferably direct current in terms of attractive force, but if the frequency is as low as a commercial frequency,
It may be an exchange.
また、電極板は２枚以上あればよく、その形状も任意
であり、例えば円板電極と、この円板に同心で内径が該
円板の外形より大きいリング板状の電極（１枚以上）と
を用いてもよい。The number of the electrode plates may be two or more, and the shape is arbitrary. For example, a disk electrode and a ring-shaped electrode (one or more) concentric with the disk and having an inner diameter larger than the outer shape of the disk May be used.
［発明の効果］ 以上説明したように、本発明に係るウエーハ搬送具で
は、ウエーハ搬送アームに半導体板を固定し、半導体板
の裏面に、互いに離れた２つの電極を接しており、電極
間に電圧を印加すると、半導体板の表面と、これに接し
たウエーハとの間にジョンセン−ラーベック効果による
強い静電吸引力が生じ、したがって、確実にウエーハを
保持でき、大きく加減速し高速搬送してもウエーハ位置
ずれしたりウエーハが損傷したりすることがないという
優れた効果を奏し、高速搬送による作業時間の短縮化に
寄与するところが大きい。[Effects of the Invention] As described above, in the wafer transfer tool according to the present invention, the semiconductor plate is fixed to the wafer transfer arm, and two electrodes separated from each other are in contact with the back surface of the semiconductor plate. When a voltage is applied, a strong electrostatic attraction force is generated between the surface of the semiconductor plate and the wafer in contact with the semiconductor plate due to the Johnsen-Rahbek effect, so that the wafer can be reliably held, greatly accelerated / decelerated, and conveyed at high speed. This also has an excellent effect of preventing the wafer from being displaced or being damaged, and greatly contributes to shortening the working time by high-speed transport.
また、本発明のウエーハ搬送具は大気中のみならず真
空中であっても確実にウエーハを保持できるという優れ
た効果も奏する。Further, the wafer transfer tool of the present invention also has an excellent effect that the wafer can be reliably held not only in the atmosphere but also in a vacuum.
さらに、電圧印加のオン・オフにより着脱を制御でき
るので、制御装置の構成が簡単になるという優れた効果
もある。Further, since the attachment / detachment can be controlled by turning on / off the voltage application, there is an excellent effect that the configuration of the control device is simplified.
第１図は本発明に係るウエーハ搬送具の原理構成図 第２図は本発明に係るウエーハ搬送具の一実施例要部斜
視図、 第３図は第２図に示すウエーハ搬送具の使用状況を示す
要部斜視図、 第４図は及び第５図は従来のウエーハ搬送具の構成を示
す要部斜視図である。 図中、 １、1Aはウエーハ搬送アーム ２、2Aは半導体板 ３、3Aは電極 ５は絶縁板FIG. 1 is a diagram illustrating the principle of the configuration of a wafer carrier according to the present invention. FIG. 2 is a perspective view of an essential part of an embodiment of the wafer carrier according to the present invention. FIG. FIGS. 4 and 5 are perspective views of the essential parts showing the configuration of a conventional wafer carrier. In the figure, 1, 1A is a wafer transfer arm 2, 2A is a semiconductor plate 3, 3A is an electrode 5, an insulating plate
Claims (2)
することにより該半導体板の表面と該表面に接した搬送
対象のウエーハとの間にジョンセン−ラーベック効果に
よる静電吸引力を生じさせて該ウエーハを保持するため
のものであることを特徴とするウエーハ搬送具。1. A semiconductor device comprising: a wafer transfer arm; one semiconductor plate fixed to the wafer transfer arm; and two electrodes separated from each other and in contact with a back surface of the semiconductor plate. Is for generating electrostatic attraction force by the Johnsen-Rahbek effect between the surface of the semiconductor plate and the wafer to be transported in contact with the surface by applying a voltage between the electrodes to hold the wafer. A wafer carrier, characterized in that:
108〜109Ω・cm内の値であることを特徴とする請求項１
記載のウエーハ搬送具。2. The single semiconductor plate has a specific resistance in a range.
2. A value within a range of 10 8 to 10 9 Ω · cm.
The described wafer carrier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63054359A JP2919837B2 (en) | 1988-03-08 | 1988-03-08 | Wafer carrier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63054359A JP2919837B2 (en) | 1988-03-08 | 1988-03-08 | Wafer carrier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01227453A JPH01227453A (en) | 1989-09-11 |
| JP2919837B2 true JP2919837B2 (en) | 1999-07-19 |
Family
ID=12968442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63054359A Expired - Fee Related JP2919837B2 (en) | 1988-03-08 | 1988-03-08 | Wafer carrier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2919837B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH043956A (en) * | 1990-04-20 | 1992-01-08 | Fujitsu Ltd | Electrostatic chuck equipment |
| KR0156263B1 (en) * | 1991-05-28 | 1998-12-01 | 이노우에 아키라 | Ion injection device |
| KR100316535B1 (en) * | 1999-12-31 | 2001-12-12 | 박종섭 | Electro static lifting apparatus for wafer |
| WO2003028065A2 (en) * | 2001-09-24 | 2003-04-03 | Fei Company | Electrostatic manipulating apparatus |
| SG125948A1 (en) * | 2003-03-31 | 2006-10-30 | Asml Netherlands Bv | Supporting structure for use in a lithographic apparatus |
| WO2012014442A1 (en) * | 2010-07-28 | 2012-02-02 | 株式会社アルバック | Substrate conveyance device and holding device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5928354A (en) * | 1982-08-10 | 1984-02-15 | Toshiba Corp | Thin film for electrostatic chuck |
| JPS61273441A (en) * | 1985-05-23 | 1986-12-03 | Canon Inc | Wafer transfer device |
| JPS62264128A (en) * | 1986-05-09 | 1987-11-17 | Tokyo Electron Ltd | Wafer conveying device |
| JPS62277234A (en) * | 1986-05-23 | 1987-12-02 | Canon Inc | Electrostatic chuck device |
-
1988
- 1988-03-08 JP JP63054359A patent/JP2919837B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01227453A (en) | 1989-09-11 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |