JP2003531495A - 成形バネ及びその製造及び使用方法 - Google Patents
成形バネ及びその製造及び使用方法Info
- Publication number
- JP2003531495A JP2003531495A JP2001577609A JP2001577609A JP2003531495A JP 2003531495 A JP2003531495 A JP 2003531495A JP 2001577609 A JP2001577609 A JP 2001577609A JP 2001577609 A JP2001577609 A JP 2001577609A JP 2003531495 A JP2003531495 A JP 2003531495A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- element material
- interconnection
- contact
- assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- 229910001285 shape-memory alloy Inorganic materials 0.000 claims description 40
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 35
- 230000008569 process Effects 0.000 claims description 31
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 2
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- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 2
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
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- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910021585 Nickel(II) bromide Inorganic materials 0.000 description 1
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- HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 description 1
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- DLDJFQGPPSQZKI-UHFFFAOYSA-N but-2-yne-1,4-diol Chemical compound OCC#CCO DLDJFQGPPSQZKI-UHFFFAOYSA-N 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
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- VNTLIPZTSJSULJ-UHFFFAOYSA-N chromium molybdenum Chemical compound [Cr].[Mo] VNTLIPZTSJSULJ-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
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- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
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- GPUMPJNVOBTUFM-UHFFFAOYSA-N naphthalene-1,2,3-trisulfonic acid Chemical compound C1=CC=C2C(S(O)(=O)=O)=C(S(O)(=O)=O)C(S(=O)(=O)O)=CC2=C1 GPUMPJNVOBTUFM-UHFFFAOYSA-N 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical class Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
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- ZSJFLDUTBDIFLJ-UHFFFAOYSA-N nickel zirconium Chemical compound [Ni].[Zr] ZSJFLDUTBDIFLJ-UHFFFAOYSA-N 0.000 description 1
- IPLJNQFXJUCRNH-UHFFFAOYSA-L nickel(2+);dibromide Chemical class [Ni+2].[Br-].[Br-] IPLJNQFXJUCRNH-UHFFFAOYSA-L 0.000 description 1
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- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
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Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
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- G01R1/06755—Material aspects
- G01R1/06761—Material aspects related to layers
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L24/11—Manufacturing methods
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R1/067—Measuring probes
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- G01R1/06733—Geometry aspects
- G01R1/06744—Microprobes, i.e. having dimensions as IC details
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- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
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- G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H01L2924/0001—Technical content checked by a classifier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H—ELECTRICITY
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- H—ELECTRICITY
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- H01L2924/01—Chemical elements
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- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
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- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10329—Gallium arsenide [GaAs]
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- H01L2924/14—Integrated circuits
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Connecting Device With Holders (AREA)
- Battery Mounting, Suspending (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/547,560 | 2000-04-12 | ||
US09/547,560 US6640432B1 (en) | 2000-04-12 | 2000-04-12 | Method of fabricating shaped springs |
US09/547,561 | 2000-04-12 | ||
US09/547,561 US7458816B1 (en) | 2000-04-12 | 2000-04-12 | Shaped spring |
PCT/US2001/009994 WO2001080315A2 (fr) | 2000-04-12 | 2001-03-28 | Ressorts faconnes et leurs procedes de fabrication et d'utilisation |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2003531495A true JP2003531495A (ja) | 2003-10-21 |
JP2003531495A5 JP2003531495A5 (fr) | 2008-05-22 |
Family
ID=27068579
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001577609A Pending JP2003531495A (ja) | 2000-04-12 | 2001-03-28 | 成形バネ及びその製造及び使用方法 |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1275150A2 (fr) |
JP (1) | JP2003531495A (fr) |
KR (2) | KR100835027B1 (fr) |
CN (1) | CN100339985C (fr) |
AU (1) | AU2001249567A1 (fr) |
TW (1) | TW546803B (fr) |
WO (1) | WO2001080315A2 (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012505964A (ja) * | 2008-10-17 | 2012-03-08 | アトテック・ドイチュラント・ゲーエムベーハー | 接合可能なウェハ表面のための応力が低減されたNi−P/Pd積層 |
JP2012069952A (ja) * | 2010-09-22 | 2012-04-05 | Palo Alto Research Center Inc | マイクロスプリング接点を有するインターポーザ、ならびにインターポーザを製作する方法および使用する方法 |
KR102114210B1 (ko) * | 2018-12-17 | 2020-05-25 | 주식회사 코리아 인스트루먼트 | 프로브 빔 및 프로브 모듈 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020026585A (ko) * | 2000-06-20 | 2002-04-10 | 나노넥서스, 인코포레이티드 | 집적회로를 테스트하고 패키지하기 위한 시스템 |
KR100941360B1 (ko) * | 2006-07-21 | 2010-02-11 | 가부시키가이샤후지쿠라 | 집적 회로 소켓, 집적 회로 소켓 조립체, 및 집적 회로 소켓의 제조 방법 |
US8476749B2 (en) * | 2009-07-22 | 2013-07-02 | Oracle America, Inc. | High-bandwidth ramp-stack chip package |
TWI449280B (zh) * | 2011-01-17 | 2014-08-11 | Hon Hai Prec Ind Co Ltd | 測試連接器 |
KR101738421B1 (ko) | 2015-11-10 | 2017-05-23 | 광주과학기술원 | 자가변형 플렉서블 필름 및 이의 제조 방법 |
KR102042052B1 (ko) * | 2017-03-23 | 2019-11-08 | 광주과학기술원 | 자가변형 플렉서블 필름 및 이의 제조 방법 |
CN114108041A (zh) * | 2021-12-20 | 2022-03-01 | 太仓市惠得利弹簧有限公司 | 一种弹簧表面抗氧化处理工艺 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS61136437U (fr) * | 1985-02-15 | 1986-08-25 | ||
JPH06181301A (ja) * | 1992-12-14 | 1994-06-28 | Fujitsu Ltd | 固体撮像素子 |
JPH09213183A (ja) * | 1996-02-05 | 1997-08-15 | Eiko Takahashi | 小型サーモスタット |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5216631A (en) * | 1990-11-02 | 1993-06-01 | Sliwa Jr John W | Microvibratory memory device |
US5810609A (en) * | 1995-08-28 | 1998-09-22 | Tessera, Inc. | Socket for engaging bump leads on a microelectronic device and methods therefor |
JPH09213813A (ja) * | 1996-02-06 | 1997-08-15 | Sony Corp | 半導体装置及び半導体装置製造方法 |
EP1482314B1 (fr) * | 1996-05-17 | 2009-11-11 | FormFactor, Inc. | Elément de contact à ressort micro-électronique |
KR100577131B1 (ko) * | 1997-05-15 | 2006-05-10 | 폼팩터, 인크. | 초소형 전자 요소 접촉 구조물과 그 제조 및 사용 방법 |
AU7959298A (en) * | 1997-09-17 | 1999-04-05 | Formfactor, Inc. | Method of making a structure with improved material properties by moderate heat treatment of a metal deposit |
US6827584B2 (en) * | 1999-12-28 | 2004-12-07 | Formfactor, Inc. | Interconnect for microelectronic structures with enhanced spring characteristics |
-
2001
- 2001-03-28 KR KR1020077018582A patent/KR100835027B1/ko not_active IP Right Cessation
- 2001-03-28 EP EP01922806A patent/EP1275150A2/fr not_active Withdrawn
- 2001-03-28 AU AU2001249567A patent/AU2001249567A1/en not_active Abandoned
- 2001-03-28 JP JP2001577609A patent/JP2003531495A/ja active Pending
- 2001-03-28 KR KR1020027013734A patent/KR100801353B1/ko not_active IP Right Cessation
- 2001-03-28 CN CNB018110053A patent/CN100339985C/zh not_active Expired - Fee Related
- 2001-03-28 WO PCT/US2001/009994 patent/WO2001080315A2/fr active Search and Examination
- 2001-04-03 TW TW090108014A patent/TW546803B/zh not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61136437U (fr) * | 1985-02-15 | 1986-08-25 | ||
JPH06181301A (ja) * | 1992-12-14 | 1994-06-28 | Fujitsu Ltd | 固体撮像素子 |
JPH09213183A (ja) * | 1996-02-05 | 1997-08-15 | Eiko Takahashi | 小型サーモスタット |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012505964A (ja) * | 2008-10-17 | 2012-03-08 | アトテック・ドイチュラント・ゲーエムベーハー | 接合可能なウェハ表面のための応力が低減されたNi−P/Pd積層 |
JP2012069952A (ja) * | 2010-09-22 | 2012-04-05 | Palo Alto Research Center Inc | マイクロスプリング接点を有するインターポーザ、ならびにインターポーザを製作する方法および使用する方法 |
KR102114210B1 (ko) * | 2018-12-17 | 2020-05-25 | 주식회사 코리아 인스트루먼트 | 프로브 빔 및 프로브 모듈 |
Also Published As
Publication number | Publication date |
---|---|
CN100339985C (zh) | 2007-09-26 |
EP1275150A2 (fr) | 2003-01-15 |
AU2001249567A1 (en) | 2001-10-30 |
KR20020090234A (ko) | 2002-11-30 |
TW546803B (en) | 2003-08-11 |
KR20070093456A (ko) | 2007-09-18 |
WO2001080315A2 (fr) | 2001-10-25 |
CN1451179A (zh) | 2003-10-22 |
KR100835027B1 (ko) | 2008-06-03 |
KR100801353B1 (ko) | 2008-02-05 |
WO2001080315A3 (fr) | 2002-03-28 |
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