JP2003520418A5 - - Google Patents
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- JP2003520418A5 JP2003520418A5 JP2001525754A JP2001525754A JP2003520418A5 JP 2003520418 A5 JP2003520418 A5 JP 2003520418A5 JP 2001525754 A JP2001525754 A JP 2001525754A JP 2001525754 A JP2001525754 A JP 2001525754A JP 2003520418 A5 JP2003520418 A5 JP 2003520418A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- plasma processing
- processing system
- liner
- internal space
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/401,308 | 1999-09-23 | ||
| US09/401,308 US6227140B1 (en) | 1999-09-23 | 1999-09-23 | Semiconductor processing equipment having radiant heated ceramic liner |
| PCT/US2000/024866 WO2001022478A1 (en) | 1999-09-23 | 2000-09-11 | Semiconductor processing equipment having radiant heated ceramic liner |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003520418A JP2003520418A (ja) | 2003-07-02 |
| JP2003520418A5 true JP2003520418A5 (https=) | 2007-11-08 |
| JP4837860B2 JP4837860B2 (ja) | 2011-12-14 |
Family
ID=23587202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001525754A Expired - Fee Related JP4837860B2 (ja) | 1999-09-23 | 2000-09-11 | プラズマ処理システム及び基板の処理方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6227140B1 (https=) |
| EP (1) | EP1214732B1 (https=) |
| JP (1) | JP4837860B2 (https=) |
| KR (1) | KR100779885B1 (https=) |
| AU (1) | AU7368300A (https=) |
| DE (1) | DE60035056T2 (https=) |
| TW (1) | TW492101B (https=) |
| WO (1) | WO2001022478A1 (https=) |
Families Citing this family (69)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6673198B1 (en) * | 1999-12-22 | 2004-01-06 | Lam Research Corporation | Semiconductor processing equipment having improved process drift control |
| US6514378B1 (en) * | 2000-03-31 | 2003-02-04 | Lam Research Corporation | Method for improving uniformity and reducing etch rate variation of etching polysilicon |
| JP2004507074A (ja) * | 2000-04-06 | 2004-03-04 | エーエスエム アメリカ インコーポレイテッド | ガラス質材料用バリアコーティング |
| US6726955B1 (en) * | 2000-06-27 | 2004-04-27 | Applied Materials, Inc. | Method of controlling the crystal structure of polycrystalline silicon |
| US6583544B1 (en) * | 2000-08-07 | 2003-06-24 | Axcelis Technologies, Inc. | Ion source having replaceable and sputterable solid source material |
| US6620520B2 (en) * | 2000-12-29 | 2003-09-16 | Lam Research Corporation | Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof |
| JP2002243898A (ja) * | 2001-02-13 | 2002-08-28 | Ebara Corp | ビーム取り出し装置 |
| TWI245329B (en) * | 2001-11-14 | 2005-12-11 | Anelva Corp | Heating element CVD device and heating element CVD method using the same |
| JP2003213421A (ja) * | 2002-01-21 | 2003-07-30 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| US20030198749A1 (en) * | 2002-04-17 | 2003-10-23 | Applied Materials, Inc. | Coated silicon carbide cermet used in a plasma reactor |
| US7086347B2 (en) | 2002-05-06 | 2006-08-08 | Lam Research Corporation | Apparatus and methods for minimizing arcing in a plasma processing chamber |
| US6825051B2 (en) * | 2002-05-17 | 2004-11-30 | Asm America, Inc. | Plasma etch resistant coating and process |
| US7311797B2 (en) * | 2002-06-27 | 2007-12-25 | Lam Research Corporation | Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor |
| KR100540992B1 (ko) * | 2002-11-18 | 2006-01-11 | 코리아세미텍 주식회사 | 웨이퍼 에칭용 전극제조방법 |
| US7217649B2 (en) * | 2003-03-14 | 2007-05-15 | Lam Research Corporation | System and method for stress free conductor removal |
| US7232766B2 (en) * | 2003-03-14 | 2007-06-19 | Lam Research Corporation | System and method for surface reduction, passivation, corrosion prevention and activation of copper surface |
| US7078344B2 (en) * | 2003-03-14 | 2006-07-18 | Lam Research Corporation | Stress free etch processing in combination with a dynamic liquid meniscus |
| US7009281B2 (en) * | 2003-03-14 | 2006-03-07 | Lam Corporation | Small volume process chamber with hot inner surfaces |
| US20050022736A1 (en) * | 2003-07-29 | 2005-02-03 | Lam Research Inc., A Delaware Corporation | Method for balancing return currents in plasma processing apparatus |
| US6974781B2 (en) * | 2003-10-20 | 2005-12-13 | Asm International N.V. | Reactor precoating for reduced stress and uniform CVD |
| US8540843B2 (en) * | 2004-06-30 | 2013-09-24 | Lam Research Corporation | Plasma chamber top piece assembly |
| US7780791B2 (en) * | 2004-06-30 | 2010-08-24 | Lam Research Corporation | Apparatus for an optimized plasma chamber top piece |
| KR100669008B1 (ko) * | 2004-12-03 | 2007-01-16 | 삼성전자주식회사 | 플라즈마 반응기 |
| KR100654005B1 (ko) * | 2005-06-14 | 2006-12-05 | 노기래 | 디퓨저 익스텐션 프레임 조립체 및 그 제조방법 |
| US7713379B2 (en) * | 2005-06-20 | 2010-05-11 | Lam Research Corporation | Plasma confinement rings including RF absorbing material for reducing polymer deposition |
| CN100358099C (zh) * | 2005-08-05 | 2007-12-26 | 中微半导体设备(上海)有限公司 | 等离子体处理装置 |
| US8366829B2 (en) * | 2005-08-05 | 2013-02-05 | Advanced Micro-Fabrication Equipment, Inc. Asia | Multi-station decoupled reactive ion etch chamber |
| CN100369192C (zh) * | 2005-12-26 | 2008-02-13 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 半导体加工系统反应腔室 |
| US20090041568A1 (en) * | 2006-01-31 | 2009-02-12 | Tokyo Electron Limited | Substrate processing apparatus, substrate placing table used for same, and member exposed to plasma |
| CN101165868B (zh) * | 2006-10-20 | 2010-05-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 晶片处理室的内衬及包含该内衬的晶片处理室 |
| US20080169183A1 (en) * | 2007-01-16 | 2008-07-17 | Varian Semiconductor Equipment Associates, Inc. | Plasma Source with Liner for Reducing Metal Contamination |
| US8444926B2 (en) * | 2007-01-30 | 2013-05-21 | Applied Materials, Inc. | Processing chamber with heated chamber liner |
| US20080196450A1 (en) * | 2007-02-21 | 2008-08-21 | Nippon Telegraph And Telephone Corporation | Coated optical fiber endface preparation method and tool |
| US7874726B2 (en) * | 2007-05-24 | 2011-01-25 | Asm America, Inc. | Thermocouple |
| US8034410B2 (en) | 2007-07-17 | 2011-10-11 | Asm International N.V. | Protective inserts to line holes in parts for semiconductor process equipment |
| US20090052498A1 (en) * | 2007-08-24 | 2009-02-26 | Asm America, Inc. | Thermocouple |
| US7807222B2 (en) * | 2007-09-17 | 2010-10-05 | Asm International N.V. | Semiconductor processing parts having apertures with deposited coatings and methods for forming the same |
| US8418649B2 (en) | 2007-12-19 | 2013-04-16 | Lam Research Corporation | Composite showerhead electrode assembly for a plasma processing apparatus |
| JP5567494B2 (ja) | 2007-12-19 | 2014-08-06 | ラム リサーチ コーポレーション | 半導体真空処理装置用のコンポーネント・アセンブリ、アセンブリを結合する方法、及び、半導体基板を処理する方法 |
| US7993057B2 (en) * | 2007-12-20 | 2011-08-09 | Asm America, Inc. | Redundant temperature sensor for semiconductor processing chambers |
| US7946762B2 (en) * | 2008-06-17 | 2011-05-24 | Asm America, Inc. | Thermocouple |
| US8262287B2 (en) | 2008-12-08 | 2012-09-11 | Asm America, Inc. | Thermocouple |
| US8066857B2 (en) | 2008-12-12 | 2011-11-29 | Fujifilm Corporation | Shaped anode and anode-shield connection for vacuum physical vapor deposition |
| US8043487B2 (en) * | 2008-12-12 | 2011-10-25 | Fujifilm Corporation | Chamber shield for vacuum physical vapor deposition |
| US8382370B2 (en) | 2009-05-06 | 2013-02-26 | Asm America, Inc. | Thermocouple assembly with guarded thermocouple junction |
| US8100583B2 (en) * | 2009-05-06 | 2012-01-24 | Asm America, Inc. | Thermocouple |
| US9297705B2 (en) | 2009-05-06 | 2016-03-29 | Asm America, Inc. | Smart temperature measuring device |
| US8249900B2 (en) * | 2010-02-10 | 2012-08-21 | Morgan Stanley & Co. Llc | System and method for termination of pension plan through mutual annuitization |
| JP5481224B2 (ja) * | 2010-02-19 | 2014-04-23 | 株式会社ニューフレアテクノロジー | 成膜装置および成膜方法 |
| US8133362B2 (en) * | 2010-02-26 | 2012-03-13 | Fujifilm Corporation | Physical vapor deposition with multi-point clamp |
| US9181619B2 (en) * | 2010-02-26 | 2015-11-10 | Fujifilm Corporation | Physical vapor deposition with heat diffuser |
| DE102010030563A1 (de) * | 2010-06-25 | 2011-12-29 | Von Ardenne Anlagentechnik Gmbh | Substratbehandlungsanlage |
| KR101184780B1 (ko) | 2010-12-20 | 2012-09-20 | 한국항공우주연구원 | 적층 방식을 이용한 방빙형 피토 정압 프로브 제작방법 |
| JP5977986B2 (ja) * | 2011-11-08 | 2016-08-24 | 株式会社日立ハイテクノロジーズ | 熱処理装置 |
| WO2013078420A2 (en) * | 2011-11-24 | 2013-05-30 | Lam Research Corporation | Symmetric rf return path liner |
| CN103151235B (zh) * | 2013-02-20 | 2016-01-27 | 上海华力微电子有限公司 | 一种提高刻蚀均匀性的装置 |
| USD702188S1 (en) | 2013-03-08 | 2014-04-08 | Asm Ip Holding B.V. | Thermocouple |
| US20140356985A1 (en) | 2013-06-03 | 2014-12-04 | Lam Research Corporation | Temperature controlled substrate support assembly |
| US9123661B2 (en) | 2013-08-07 | 2015-09-01 | Lam Research Corporation | Silicon containing confinement ring for plasma processing apparatus and method of forming thereof |
| US11004661B2 (en) * | 2015-09-04 | 2021-05-11 | Applied Materials, Inc. | Process chamber for cyclic and selective material removal and etching |
| WO2017165016A1 (en) * | 2016-03-25 | 2017-09-28 | Applied Materials, Inc. | Chamber liner for high temperature processing |
| KR101798373B1 (ko) * | 2016-05-03 | 2017-11-17 | (주)브이앤아이솔루션 | 유도결합 플라즈마 처리장치의 유전체창 지지구조 |
| CN108022852B (zh) | 2016-11-01 | 2020-08-07 | 中微半导体设备(上海)股份有限公司 | Icp刻蚀机台及其绝缘窗口薄膜加热器装置和温度控制方法 |
| US11004662B2 (en) * | 2017-02-14 | 2021-05-11 | Lam Research Corporation | Temperature controlled spacer for use in a substrate processing chamber |
| KR102642790B1 (ko) * | 2018-08-06 | 2024-03-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 처리 챔버를 위한 라이너 |
| US20220139661A1 (en) * | 2019-04-01 | 2022-05-05 | One Semicon. Co., Ltd. | Manufacturing method of plasma focus ring for semiconductor etching apparatus |
| CN110055518A (zh) * | 2019-05-10 | 2019-07-26 | 普乐新能源(蚌埠)有限公司 | 低压化学气相沉积真空管式炉的柔性衬管 |
| CN112071733B (zh) | 2019-06-10 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | 用于真空处理设备的内衬装置和真空处理设备 |
| US10925146B1 (en) | 2019-12-17 | 2021-02-16 | Applied Materials, Inc. | Ion source chamber with embedded heater |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4340462A (en) | 1981-02-13 | 1982-07-20 | Lam Research Corporation | Adjustable electrode plasma processing chamber |
| FR2538987A1 (fr) | 1983-01-05 | 1984-07-06 | Commissariat Energie Atomique | Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif |
| JPH0528757Y2 (https=) * | 1985-12-25 | 1993-07-23 | ||
| JPH0741153Y2 (ja) | 1987-10-26 | 1995-09-20 | 東京応化工業株式会社 | 試料処理用電極 |
| US5262029A (en) | 1988-05-23 | 1993-11-16 | Lam Research | Method and system for clamping semiconductor wafers |
| US5182059A (en) | 1989-01-17 | 1993-01-26 | Ngk Insulators, Ltd. | Process for producing high density SiC sintered bodies |
| US4948458A (en) | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
| US5556501A (en) | 1989-10-03 | 1996-09-17 | Applied Materials, Inc. | Silicon scavenger in an inductively coupled RF plasma reactor |
| US5292399A (en) | 1990-04-19 | 1994-03-08 | Applied Materials, Inc. | Plasma etching apparatus with conductive means for inhibiting arcing |
| US5085727A (en) | 1990-05-21 | 1992-02-04 | Applied Materials, Inc. | Plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion |
| US5200232A (en) | 1990-12-11 | 1993-04-06 | Lam Research Corporation | Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors |
| US6036877A (en) * | 1991-06-27 | 2000-03-14 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
| US5461214A (en) | 1992-06-15 | 1995-10-24 | Thermtec, Inc. | High performance horizontal diffusion furnace system |
| US5366585A (en) | 1993-01-28 | 1994-11-22 | Applied Materials, Inc. | Method and apparatus for protection of conductive surfaces in a plasma processing reactor |
| US5798016A (en) | 1994-03-08 | 1998-08-25 | International Business Machines Corporation | Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability |
| US5680013A (en) | 1994-03-15 | 1997-10-21 | Applied Materials, Inc. | Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces |
| EP0760526A4 (en) | 1994-05-17 | 2001-01-10 | Hitachi Ltd | DEVICE AND METHOD FOR TREATING PLASMA |
| US5641375A (en) | 1994-08-15 | 1997-06-24 | Applied Materials, Inc. | Plasma etching reactor with surface protection means against erosion of walls |
| US5885356A (en) | 1994-11-30 | 1999-03-23 | Applied Materials, Inc. | Method of reducing residue accumulation in CVD chamber using ceramic lining |
| US5569356A (en) | 1995-05-19 | 1996-10-29 | Lam Research Corporation | Electrode clamping assembly and method for assembly and use thereof |
| US5838529A (en) | 1995-12-22 | 1998-11-17 | Lam Research Corporation | Low voltage electrostatic clamp for substrates such as dielectric substrates |
| JP3360265B2 (ja) | 1996-04-26 | 2002-12-24 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| JPH10242130A (ja) * | 1996-04-26 | 1998-09-11 | Hitachi Ltd | プラズマ処理方法及び装置 |
| US5820723A (en) * | 1996-06-05 | 1998-10-13 | Lam Research Corporation | Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
| US5863376A (en) | 1996-06-05 | 1999-01-26 | Lam Research Corporation | Temperature controlling method and apparatus for a plasma processing chamber |
| US5788799A (en) | 1996-06-11 | 1998-08-04 | Applied Materials, Inc. | Apparatus and method for cleaning of semiconductor process chamber surfaces |
| US5904778A (en) | 1996-07-26 | 1999-05-18 | Applied Materials, Inc. | Silicon carbide composite article particularly useful for plasma reactors |
| US5827408A (en) * | 1996-07-26 | 1998-10-27 | Applied Materials, Inc | Method and apparatus for improving the conformality of sputter deposited films |
| US6055927A (en) * | 1997-01-14 | 2000-05-02 | Applied Komatsu Technology, Inc. | Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology |
| US5800621A (en) * | 1997-02-10 | 1998-09-01 | Applied Materials, Inc. | Plasma source for HDP-CVD chamber |
| US6258170B1 (en) * | 1997-09-11 | 2001-07-10 | Applied Materials, Inc. | Vaporization and deposition apparatus |
-
1999
- 1999-09-23 US US09/401,308 patent/US6227140B1/en not_active Expired - Lifetime
-
2000
- 2000-09-11 WO PCT/US2000/024866 patent/WO2001022478A1/en not_active Ceased
- 2000-09-11 KR KR1020027003801A patent/KR100779885B1/ko not_active Expired - Fee Related
- 2000-09-11 DE DE60035056T patent/DE60035056T2/de not_active Expired - Lifetime
- 2000-09-11 EP EP00961776A patent/EP1214732B1/en not_active Expired - Lifetime
- 2000-09-11 AU AU73683/00A patent/AU7368300A/en not_active Abandoned
- 2000-09-11 JP JP2001525754A patent/JP4837860B2/ja not_active Expired - Fee Related
- 2000-09-18 TW TW089119142A patent/TW492101B/zh not_active IP Right Cessation
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