AU7368300A - Semiconductor processing equipment having radiant heated ceramic liner - Google Patents

Semiconductor processing equipment having radiant heated ceramic liner

Info

Publication number
AU7368300A
AU7368300A AU73683/00A AU7368300A AU7368300A AU 7368300 A AU7368300 A AU 7368300A AU 73683/00 A AU73683/00 A AU 73683/00A AU 7368300 A AU7368300 A AU 7368300A AU 7368300 A AU7368300 A AU 7368300A
Authority
AU
Australia
Prior art keywords
processing equipment
semiconductor processing
ceramic liner
heated ceramic
radiant heated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU73683/00A
Other languages
English (en)
Inventor
William S. Kennedy
Robert A. Maraschin
Thomas E. Wicker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of AU7368300A publication Critical patent/AU7368300A/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Ceramic Products (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
AU73683/00A 1999-09-23 2000-09-11 Semiconductor processing equipment having radiant heated ceramic liner Abandoned AU7368300A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/401,308 US6227140B1 (en) 1999-09-23 1999-09-23 Semiconductor processing equipment having radiant heated ceramic liner
US09401308 1999-09-23
PCT/US2000/024866 WO2001022478A1 (en) 1999-09-23 2000-09-11 Semiconductor processing equipment having radiant heated ceramic liner

Publications (1)

Publication Number Publication Date
AU7368300A true AU7368300A (en) 2001-04-24

Family

ID=23587202

Family Applications (1)

Application Number Title Priority Date Filing Date
AU73683/00A Abandoned AU7368300A (en) 1999-09-23 2000-09-11 Semiconductor processing equipment having radiant heated ceramic liner

Country Status (8)

Country Link
US (1) US6227140B1 (https=)
EP (1) EP1214732B1 (https=)
JP (1) JP4837860B2 (https=)
KR (1) KR100779885B1 (https=)
AU (1) AU7368300A (https=)
DE (1) DE60035056T2 (https=)
TW (1) TW492101B (https=)
WO (1) WO2001022478A1 (https=)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6673198B1 (en) * 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
US6514378B1 (en) * 2000-03-31 2003-02-04 Lam Research Corporation Method for improving uniformity and reducing etch rate variation of etching polysilicon
JP2004507074A (ja) * 2000-04-06 2004-03-04 エーエスエム　アメリカ　インコーポレイテッド ガラス質材料用バリアコーティング
US6726955B1 (en) * 2000-06-27 2004-04-27 Applied Materials, Inc. Method of controlling the crystal structure of polycrystalline silicon
US6583544B1 (en) * 2000-08-07 2003-06-24 Axcelis Technologies, Inc. Ion source having replaceable and sputterable solid source material
US6620520B2 (en) * 2000-12-29 2003-09-16 Lam Research Corporation Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof
JP2002243898A (ja) * 2001-02-13 2002-08-28 Ebara Corp ビーム取り出し装置
TWI245329B (en) * 2001-11-14 2005-12-11 Anelva Corp Heating element CVD device and heating element CVD method using the same
JP2003213421A (ja) * 2002-01-21 2003-07-30 Hitachi Kokusai Electric Inc 基板処理装置
US20030198749A1 (en) * 2002-04-17 2003-10-23 Applied Materials, Inc. Coated silicon carbide cermet used in a plasma reactor
US7086347B2 (en) 2002-05-06 2006-08-08 Lam Research Corporation Apparatus and methods for minimizing arcing in a plasma processing chamber
US6825051B2 (en) * 2002-05-17 2004-11-30 Asm America, Inc. Plasma etch resistant coating and process
US7311797B2 (en) * 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
KR100540992B1 (ko) * 2002-11-18 2006-01-11 코리아세미텍 주식회사 웨이퍼 에칭용 전극제조방법
US7217649B2 (en) * 2003-03-14 2007-05-15 Lam Research Corporation System and method for stress free conductor removal
US7232766B2 (en) * 2003-03-14 2007-06-19 Lam Research Corporation System and method for surface reduction, passivation, corrosion prevention and activation of copper surface
US7078344B2 (en) * 2003-03-14 2006-07-18 Lam Research Corporation Stress free etch processing in combination with a dynamic liquid meniscus
US7009281B2 (en) * 2003-03-14 2006-03-07 Lam Corporation Small volume process chamber with hot inner surfaces
US20050022736A1 (en) * 2003-07-29 2005-02-03 Lam Research Inc., A Delaware Corporation Method for balancing return currents in plasma processing apparatus
US6974781B2 (en) * 2003-10-20 2005-12-13 Asm International N.V. Reactor precoating for reduced stress and uniform CVD
US8540843B2 (en) * 2004-06-30 2013-09-24 Lam Research Corporation Plasma chamber top piece assembly
US7780791B2 (en) * 2004-06-30 2010-08-24 Lam Research Corporation Apparatus for an optimized plasma chamber top piece
KR100669008B1 (ko) * 2004-12-03 2007-01-16 삼성전자주식회사 플라즈마 반응기
KR100654005B1 (ko) * 2005-06-14 2006-12-05 노기래 디퓨저 익스텐션 프레임 조립체 및 그 제조방법
US7713379B2 (en) * 2005-06-20 2010-05-11 Lam Research Corporation Plasma confinement rings including RF absorbing material for reducing polymer deposition
CN100358099C (zh) * 2005-08-05 2007-12-26 中微半导体设备(上海)有限公司 等离子体处理装置
US8366829B2 (en) * 2005-08-05 2013-02-05 Advanced Micro-Fabrication Equipment, Inc. Asia Multi-station decoupled reactive ion etch chamber
CN100369192C (zh) * 2005-12-26 2008-02-13 北京北方微电子基地设备工艺研究中心有限责任公司 半导体加工系统反应腔室
US20090041568A1 (en) * 2006-01-31 2009-02-12 Tokyo Electron Limited Substrate processing apparatus, substrate placing table used for same, and member exposed to plasma
CN101165868B (zh) * 2006-10-20 2010-05-12 北京北方微电子基地设备工艺研究中心有限责任公司 晶片处理室的内衬及包含该内衬的晶片处理室
US20080169183A1 (en) * 2007-01-16 2008-07-17 Varian Semiconductor Equipment Associates, Inc. Plasma Source with Liner for Reducing Metal Contamination
US8444926B2 (en) * 2007-01-30 2013-05-21 Applied Materials, Inc. Processing chamber with heated chamber liner
US20080196450A1 (en) * 2007-02-21 2008-08-21 Nippon Telegraph And Telephone Corporation Coated optical fiber endface preparation method and tool
US7874726B2 (en) * 2007-05-24 2011-01-25 Asm America, Inc. Thermocouple
US8034410B2 (en) 2007-07-17 2011-10-11 Asm International N.V. Protective inserts to line holes in parts for semiconductor process equipment
US20090052498A1 (en) * 2007-08-24 2009-02-26 Asm America, Inc. Thermocouple
US7807222B2 (en) * 2007-09-17 2010-10-05 Asm International N.V. Semiconductor processing parts having apertures with deposited coatings and methods for forming the same
US8418649B2 (en) 2007-12-19 2013-04-16 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
JP5567494B2 (ja) 2007-12-19 2014-08-06 ラム リサーチ コーポレーション 半導体真空処理装置用のコンポーネント・アセンブリ、アセンブリを結合する方法、及び、半導体基板を処理する方法
US7993057B2 (en) * 2007-12-20 2011-08-09 Asm America, Inc. Redundant temperature sensor for semiconductor processing chambers
US7946762B2 (en) * 2008-06-17 2011-05-24 Asm America, Inc. Thermocouple
US8262287B2 (en) 2008-12-08 2012-09-11 Asm America, Inc. Thermocouple
US8066857B2 (en) 2008-12-12 2011-11-29 Fujifilm Corporation Shaped anode and anode-shield connection for vacuum physical vapor deposition
US8043487B2 (en) * 2008-12-12 2011-10-25 Fujifilm Corporation Chamber shield for vacuum physical vapor deposition
US8382370B2 (en) 2009-05-06 2013-02-26 Asm America, Inc. Thermocouple assembly with guarded thermocouple junction
US8100583B2 (en) * 2009-05-06 2012-01-24 Asm America, Inc. Thermocouple
US9297705B2 (en) 2009-05-06 2016-03-29 Asm America, Inc. Smart temperature measuring device
US8249900B2 (en) * 2010-02-10 2012-08-21 Morgan Stanley & Co. Llc System and method for termination of pension plan through mutual annuitization
JP5481224B2 (ja) * 2010-02-19 2014-04-23 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
US8133362B2 (en) * 2010-02-26 2012-03-13 Fujifilm Corporation Physical vapor deposition with multi-point clamp
US9181619B2 (en) * 2010-02-26 2015-11-10 Fujifilm Corporation Physical vapor deposition with heat diffuser
DE102010030563A1 (de) * 2010-06-25 2011-12-29 Von Ardenne Anlagentechnik Gmbh Substratbehandlungsanlage
KR101184780B1 (ko) 2010-12-20 2012-09-20 한국항공우주연구원 적층 방식을 이용한 방빙형 피토 정압 프로브 제작방법
JP5977986B2 (ja) * 2011-11-08 2016-08-24 株式会社日立ハイテクノロジーズ 熱処理装置
WO2013078420A2 (en) * 2011-11-24 2013-05-30 Lam Research Corporation Symmetric rf return path liner
CN103151235B (zh) * 2013-02-20 2016-01-27 上海华力微电子有限公司 一种提高刻蚀均匀性的装置
USD702188S1 (en) 2013-03-08 2014-04-08 Asm Ip Holding B.V. Thermocouple
US20140356985A1 (en) 2013-06-03 2014-12-04 Lam Research Corporation Temperature controlled substrate support assembly
US9123661B2 (en) 2013-08-07 2015-09-01 Lam Research Corporation Silicon containing confinement ring for plasma processing apparatus and method of forming thereof
US11004661B2 (en) * 2015-09-04 2021-05-11 Applied Materials, Inc. Process chamber for cyclic and selective material removal and etching
WO2017165016A1 (en) * 2016-03-25 2017-09-28 Applied Materials, Inc. Chamber liner for high temperature processing
KR101798373B1 (ko) * 2016-05-03 2017-11-17 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 유전체창 지지구조
CN108022852B (zh) 2016-11-01 2020-08-07 中微半导体设备(上海)股份有限公司 Icp刻蚀机台及其绝缘窗口薄膜加热器装置和温度控制方法
US11004662B2 (en) * 2017-02-14 2021-05-11 Lam Research Corporation Temperature controlled spacer for use in a substrate processing chamber
KR102642790B1 (ko) * 2018-08-06 2024-03-05 어플라이드 머티어리얼스, 인코포레이티드 처리 챔버를 위한 라이너
US20220139661A1 (en) * 2019-04-01 2022-05-05 One Semicon. Co., Ltd. Manufacturing method of plasma focus ring for semiconductor etching apparatus
CN110055518A (zh) * 2019-05-10 2019-07-26 普乐新能源（蚌埠）有限公司 低压化学气相沉积真空管式炉的柔性衬管
CN112071733B (zh) 2019-06-10 2024-03-12 中微半导体设备(上海)股份有限公司 用于真空处理设备的内衬装置和真空处理设备
US10925146B1 (en) 2019-12-17 2021-02-16 Applied Materials, Inc. Ion source chamber with embedded heater

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340462A (en) 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
FR2538987A1 (fr) 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
JPH0528757Y2 (https=) * 1985-12-25 1993-07-23
JPH0741153Y2 (ja) 1987-10-26 1995-09-20 東京応化工業株式会社 試料処理用電極
US5262029A (en) 1988-05-23 1993-11-16 Lam Research Method and system for clamping semiconductor wafers
US5182059A (en) 1989-01-17 1993-01-26 Ngk Insulators, Ltd. Process for producing high density SiC sintered bodies
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5556501A (en) 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
US5292399A (en) 1990-04-19 1994-03-08 Applied Materials, Inc. Plasma etching apparatus with conductive means for inhibiting arcing
US5085727A (en) 1990-05-21 1992-02-04 Applied Materials, Inc. Plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion
US5200232A (en) 1990-12-11 1993-04-06 Lam Research Corporation Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
US6036877A (en) * 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US5461214A (en) 1992-06-15 1995-10-24 Thermtec, Inc. High performance horizontal diffusion furnace system
US5366585A (en) 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
US5798016A (en) 1994-03-08 1998-08-25 International Business Machines Corporation Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
US5680013A (en) 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
EP0760526A4 (en) 1994-05-17 2001-01-10 Hitachi Ltd DEVICE AND METHOD FOR TREATING PLASMA
US5641375A (en) 1994-08-15 1997-06-24 Applied Materials, Inc. Plasma etching reactor with surface protection means against erosion of walls
US5885356A (en) 1994-11-30 1999-03-23 Applied Materials, Inc. Method of reducing residue accumulation in CVD chamber using ceramic lining
US5569356A (en) 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
US5838529A (en) 1995-12-22 1998-11-17 Lam Research Corporation Low voltage electrostatic clamp for substrates such as dielectric substrates
JP3360265B2 (ja) 1996-04-26 2002-12-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JPH10242130A (ja) * 1996-04-26 1998-09-11 Hitachi Ltd プラズマ処理方法及び装置
US5820723A (en) * 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5863376A (en) 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber
US5788799A (en) 1996-06-11 1998-08-04 Applied Materials, Inc. Apparatus and method for cleaning of semiconductor process chamber surfaces
US5904778A (en) 1996-07-26 1999-05-18 Applied Materials, Inc. Silicon carbide composite article particularly useful for plasma reactors
US5827408A (en) * 1996-07-26 1998-10-27 Applied Materials, Inc Method and apparatus for improving the conformality of sputter deposited films
US6055927A (en) * 1997-01-14 2000-05-02 Applied Komatsu Technology, Inc. Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
US5800621A (en) * 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber
US6258170B1 (en) * 1997-09-11 2001-07-10 Applied Materials, Inc. Vaporization and deposition apparatus

Also Published As

Publication number Publication date
JP2003520418A (ja) 2003-07-02
DE60035056D1 (de) 2007-07-12
WO2001022478A9 (en) 2002-11-28
KR20020047183A (ko) 2002-06-21
DE60035056T2 (de) 2008-01-31
TW492101B (en) 2002-06-21
WO2001022478A1 (en) 2001-03-29
EP1214732A1 (en) 2002-06-19
JP4837860B2 (ja) 2011-12-14
KR100779885B1 (ko) 2007-11-28
US6227140B1 (en) 2001-05-08
EP1214732B1 (en) 2007-05-30

Similar Documents

Publication Publication Date Title
AU7368300A (en) Semiconductor processing equipment having radiant heated ceramic liner
AU7477900A (en) Semiconductor processing equipment having tiled ceramic liner
AU2252301A (en) Semiconductor processing equipment
AU6343800A (en) Thermal processing chamber for heating and cooling wafer-like objects
AU2301699A (en) System for the treatment of wafers
AU6754600A (en) Dual wafer attachment process
SG90766A1 (en) Dual substrate loadlock process equipment
AU7456798A (en) Vertical furnace for the treatment of semiconductor substrates
AU2002365207A1 (en) Induction heating using dual susceptors
SG111010A1 (en) Substrate processing apparatus
AU3216400A (en) Morphed processing of semiconductor devices
AU4516901A (en) Heated garment
AU3806700A (en) Heat-resistant garment
AU4009200A (en) Ceramic substrate for nonstick coating
SG86446A1 (en) Magnetron with cooling system for substrate processing system
AU2224400A (en) Semiconductor fabrication processes
EP1074169A4 (en) OVEN WITH INDUCTIVE BEAM GRILLING DEVICE
AU3908100A (en) Ir radiation sensing with sic
AU2001230690A1 (en) Microwave radiation for heat treatment of grain
IL125690A0 (en) Furnace for processing semiconductor wafers
GB9903718D0 (en) Radiant burner
AU1422601A (en) Induction heating apparatus
AU5926800A (en) Semiconductor devices and process for manufacture
AU5429400A (en) Method for preparing far-infrared radiation ceramics
AU3156599A (en) Induction heating

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase