DE60035056D1 - Anlage zur behandlung von halbleitern mit durch strahlungsheizelementen geheizten keramischer auskleidung - Google Patents

Anlage zur behandlung von halbleitern mit durch strahlungsheizelementen geheizten keramischer auskleidung

Info

Publication number
DE60035056D1
DE60035056D1 DE60035056T DE60035056T DE60035056D1 DE 60035056 D1 DE60035056 D1 DE 60035056D1 DE 60035056 T DE60035056 T DE 60035056T DE 60035056 T DE60035056 T DE 60035056T DE 60035056 D1 DE60035056 D1 DE 60035056D1
Authority
DE
Germany
Prior art keywords
appendix
semiconductors
treatment
heating elements
radiator heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60035056T
Other languages
English (en)
Other versions
DE60035056T2 (de
Inventor
William S Kennedy
Robert A Maraschin
Thomas E Wicker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Application granted granted Critical
Publication of DE60035056D1 publication Critical patent/DE60035056D1/de
Publication of DE60035056T2 publication Critical patent/DE60035056T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
DE60035056T 1999-09-23 2000-09-11 Anlage zur behandlung von halbleitern mit durch strahlungsheizelementen geheizten keramischer auskleidung Expired - Lifetime DE60035056T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/401,308 US6227140B1 (en) 1999-09-23 1999-09-23 Semiconductor processing equipment having radiant heated ceramic liner
US401308 1999-09-23
PCT/US2000/024866 WO2001022478A1 (en) 1999-09-23 2000-09-11 Semiconductor processing equipment having radiant heated ceramic liner

Publications (2)

Publication Number Publication Date
DE60035056D1 true DE60035056D1 (de) 2007-07-12
DE60035056T2 DE60035056T2 (de) 2008-01-31

Family

ID=23587202

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60035056T Expired - Lifetime DE60035056T2 (de) 1999-09-23 2000-09-11 Anlage zur behandlung von halbleitern mit durch strahlungsheizelementen geheizten keramischer auskleidung

Country Status (8)

Country Link
US (1) US6227140B1 (de)
EP (1) EP1214732B1 (de)
JP (1) JP4837860B2 (de)
KR (1) KR100779885B1 (de)
AU (1) AU7368300A (de)
DE (1) DE60035056T2 (de)
TW (1) TW492101B (de)
WO (1) WO2001022478A1 (de)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6673198B1 (en) * 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
US6514378B1 (en) * 2000-03-31 2003-02-04 Lam Research Corporation Method for improving uniformity and reducing etch rate variation of etching polysilicon
EP1313890B1 (de) * 2000-04-06 2006-10-11 ASM America, Inc. Sperrschicht für glasartige werkstoffe
US6726955B1 (en) * 2000-06-27 2004-04-27 Applied Materials, Inc. Method of controlling the crystal structure of polycrystalline silicon
US6583544B1 (en) * 2000-08-07 2003-06-24 Axcelis Technologies, Inc. Ion source having replaceable and sputterable solid source material
US6620520B2 (en) * 2000-12-29 2003-09-16 Lam Research Corporation Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof
JP2002243898A (ja) * 2001-02-13 2002-08-28 Ebara Corp ビーム取り出し装置
TWI245329B (en) * 2001-11-14 2005-12-11 Anelva Corp Heating element CVD device and heating element CVD method using the same
JP2003213421A (ja) * 2002-01-21 2003-07-30 Hitachi Kokusai Electric Inc 基板処理装置
US20030198749A1 (en) * 2002-04-17 2003-10-23 Applied Materials, Inc. Coated silicon carbide cermet used in a plasma reactor
US7086347B2 (en) * 2002-05-06 2006-08-08 Lam Research Corporation Apparatus and methods for minimizing arcing in a plasma processing chamber
US6825051B2 (en) * 2002-05-17 2004-11-30 Asm America, Inc. Plasma etch resistant coating and process
US7311797B2 (en) * 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
KR100540992B1 (ko) * 2002-11-18 2006-01-11 코리아세미텍 주식회사 웨이퍼 에칭용 전극제조방법
US7217649B2 (en) * 2003-03-14 2007-05-15 Lam Research Corporation System and method for stress free conductor removal
US7078344B2 (en) * 2003-03-14 2006-07-18 Lam Research Corporation Stress free etch processing in combination with a dynamic liquid meniscus
US7232766B2 (en) * 2003-03-14 2007-06-19 Lam Research Corporation System and method for surface reduction, passivation, corrosion prevention and activation of copper surface
US7009281B2 (en) * 2003-03-14 2006-03-07 Lam Corporation Small volume process chamber with hot inner surfaces
US20050022736A1 (en) * 2003-07-29 2005-02-03 Lam Research Inc., A Delaware Corporation Method for balancing return currents in plasma processing apparatus
US6974781B2 (en) * 2003-10-20 2005-12-13 Asm International N.V. Reactor precoating for reduced stress and uniform CVD
US7780791B2 (en) * 2004-06-30 2010-08-24 Lam Research Corporation Apparatus for an optimized plasma chamber top piece
US8540843B2 (en) * 2004-06-30 2013-09-24 Lam Research Corporation Plasma chamber top piece assembly
KR100669008B1 (ko) * 2004-12-03 2007-01-16 삼성전자주식회사 플라즈마 반응기
KR100654005B1 (ko) * 2005-06-14 2006-12-05 노기래 디퓨저 익스텐션 프레임 조립체 및 그 제조방법
US7713379B2 (en) 2005-06-20 2010-05-11 Lam Research Corporation Plasma confinement rings including RF absorbing material for reducing polymer deposition
US8366829B2 (en) * 2005-08-05 2013-02-05 Advanced Micro-Fabrication Equipment, Inc. Asia Multi-station decoupled reactive ion etch chamber
CN100358099C (zh) * 2005-08-05 2007-12-26 中微半导体设备(上海)有限公司 等离子体处理装置
CN100369192C (zh) * 2005-12-26 2008-02-13 北京北方微电子基地设备工艺研究中心有限责任公司 半导体加工系统反应腔室
US20090041568A1 (en) * 2006-01-31 2009-02-12 Tokyo Electron Limited Substrate processing apparatus, substrate placing table used for same, and member exposed to plasma
CN101165868B (zh) * 2006-10-20 2010-05-12 北京北方微电子基地设备工艺研究中心有限责任公司 晶片处理室的内衬及包含该内衬的晶片处理室
US20080169183A1 (en) * 2007-01-16 2008-07-17 Varian Semiconductor Equipment Associates, Inc. Plasma Source with Liner for Reducing Metal Contamination
US8444926B2 (en) * 2007-01-30 2013-05-21 Applied Materials, Inc. Processing chamber with heated chamber liner
US20080196450A1 (en) * 2007-02-21 2008-08-21 Nippon Telegraph And Telephone Corporation Coated optical fiber endface preparation method and tool
US7874726B2 (en) * 2007-05-24 2011-01-25 Asm America, Inc. Thermocouple
US8034410B2 (en) 2007-07-17 2011-10-11 Asm International N.V. Protective inserts to line holes in parts for semiconductor process equipment
US20090052498A1 (en) * 2007-08-24 2009-02-26 Asm America, Inc. Thermocouple
US7807222B2 (en) * 2007-09-17 2010-10-05 Asm International N.V. Semiconductor processing parts having apertures with deposited coatings and methods for forming the same
WO2009078923A2 (en) 2007-12-19 2009-06-25 Lam Research Corporation Film adhesive for semiconductor vacuum processing apparatus
SG10201407723PA (en) * 2007-12-19 2014-12-30 Lam Res Corp A composite showerhead electrode assembly for a plasma processing apparatus
US7993057B2 (en) * 2007-12-20 2011-08-09 Asm America, Inc. Redundant temperature sensor for semiconductor processing chambers
US7946762B2 (en) * 2008-06-17 2011-05-24 Asm America, Inc. Thermocouple
US8262287B2 (en) * 2008-12-08 2012-09-11 Asm America, Inc. Thermocouple
US8043487B2 (en) * 2008-12-12 2011-10-25 Fujifilm Corporation Chamber shield for vacuum physical vapor deposition
US8066857B2 (en) 2008-12-12 2011-11-29 Fujifilm Corporation Shaped anode and anode-shield connection for vacuum physical vapor deposition
US8100583B2 (en) * 2009-05-06 2012-01-24 Asm America, Inc. Thermocouple
US8382370B2 (en) 2009-05-06 2013-02-26 Asm America, Inc. Thermocouple assembly with guarded thermocouple junction
US9297705B2 (en) 2009-05-06 2016-03-29 Asm America, Inc. Smart temperature measuring device
US8249900B2 (en) * 2010-02-10 2012-08-21 Morgan Stanley & Co. Llc System and method for termination of pension plan through mutual annuitization
JP5481224B2 (ja) * 2010-02-19 2014-04-23 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
US9181619B2 (en) * 2010-02-26 2015-11-10 Fujifilm Corporation Physical vapor deposition with heat diffuser
US8133362B2 (en) * 2010-02-26 2012-03-13 Fujifilm Corporation Physical vapor deposition with multi-point clamp
DE102010030563A1 (de) * 2010-06-25 2011-12-29 Von Ardenne Anlagentechnik Gmbh Substratbehandlungsanlage
KR101184780B1 (ko) 2010-12-20 2012-09-20 한국항공우주연구원 적층 방식을 이용한 방빙형 피토 정압 프로브 제작방법
JP5977986B2 (ja) * 2011-11-08 2016-08-24 株式会社日立ハイテクノロジーズ 熱処理装置
KR102044568B1 (ko) * 2011-11-24 2019-11-13 램 리써치 코포레이션 대칭형 rf 복귀 경로 라이너
CN103151235B (zh) * 2013-02-20 2016-01-27 上海华力微电子有限公司 一种提高刻蚀均匀性的装置
USD702188S1 (en) 2013-03-08 2014-04-08 Asm Ip Holding B.V. Thermocouple
US20140356985A1 (en) 2013-06-03 2014-12-04 Lam Research Corporation Temperature controlled substrate support assembly
US9123661B2 (en) 2013-08-07 2015-09-01 Lam Research Corporation Silicon containing confinement ring for plasma processing apparatus and method of forming thereof
US11004661B2 (en) * 2015-09-04 2021-05-11 Applied Materials, Inc. Process chamber for cyclic and selective material removal and etching
WO2017165016A1 (en) 2016-03-25 2017-09-28 Applied Materials, Inc. Chamber liner for high temperature processing
KR101798373B1 (ko) * 2016-05-03 2017-11-17 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 유전체창 지지구조
US11004662B2 (en) * 2017-02-14 2021-05-11 Lam Research Corporation Temperature controlled spacer for use in a substrate processing chamber
KR102642790B1 (ko) * 2018-08-06 2024-03-05 어플라이드 머티어리얼스, 인코포레이티드 처리 챔버를 위한 라이너
US20220139661A1 (en) * 2019-04-01 2022-05-05 One Semicon. Co., Ltd. Manufacturing method of plasma focus ring for semiconductor etching apparatus
CN110055518A (zh) * 2019-05-10 2019-07-26 普乐新能源（蚌埠）有限公司 低压化学气相沉积真空管式炉的柔性衬管
CN112071733B (zh) 2019-06-10 2024-03-12 中微半导体设备(上海)股份有限公司 用于真空处理设备的内衬装置和真空处理设备
US10925146B1 (en) 2019-12-17 2021-02-16 Applied Materials, Inc. Ion source chamber with embedded heater

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340462A (en) 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
FR2538987A1 (fr) 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
JPH0528757Y2 (de) * 1985-12-25 1993-07-23
JPH0741153Y2 (ja) 1987-10-26 1995-09-20 東京応化工業株式会社 試料処理用電極
US5262029A (en) 1988-05-23 1993-11-16 Lam Research Method and system for clamping semiconductor wafers
US5182059A (en) 1989-01-17 1993-01-26 Ngk Insulators, Ltd. Process for producing high density SiC sintered bodies
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5556501A (en) 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
US5292399A (en) 1990-04-19 1994-03-08 Applied Materials, Inc. Plasma etching apparatus with conductive means for inhibiting arcing
US5085727A (en) 1990-05-21 1992-02-04 Applied Materials, Inc. Plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion
US5200232A (en) 1990-12-11 1993-04-06 Lam Research Corporation Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
US6036877A (en) * 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US5461214A (en) 1992-06-15 1995-10-24 Thermtec, Inc. High performance horizontal diffusion furnace system
US5366585A (en) 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
US5798016A (en) * 1994-03-08 1998-08-25 International Business Machines Corporation Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
US5680013A (en) 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
US5895586A (en) 1994-05-17 1999-04-20 Hitachi, Ltd. Plasma processing apparatus and plasma processing method in which a part of the processing chamber is formed using a pre-fluorinated material of aluminum
US5641375A (en) 1994-08-15 1997-06-24 Applied Materials, Inc. Plasma etching reactor with surface protection means against erosion of walls
US5885356A (en) 1994-11-30 1999-03-23 Applied Materials, Inc. Method of reducing residue accumulation in CVD chamber using ceramic lining
US5569356A (en) 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
US5838529A (en) 1995-12-22 1998-11-17 Lam Research Corporation Low voltage electrostatic clamp for substrates such as dielectric substrates
JPH10242130A (ja) * 1996-04-26 1998-09-11 Hitachi Ltd プラズマ処理方法及び装置
JP3360265B2 (ja) 1996-04-26 2002-12-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US5863376A (en) 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber
US5820723A (en) 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5788799A (en) 1996-06-11 1998-08-04 Applied Materials, Inc. Apparatus and method for cleaning of semiconductor process chamber surfaces
US5827408A (en) * 1996-07-26 1998-10-27 Applied Materials, Inc Method and apparatus for improving the conformality of sputter deposited films
US5904778A (en) 1996-07-26 1999-05-18 Applied Materials, Inc. Silicon carbide composite article particularly useful for plasma reactors
US6055927A (en) * 1997-01-14 2000-05-02 Applied Komatsu Technology, Inc. Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
US5800621A (en) * 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber
US6258170B1 (en) 1997-09-11 2001-07-10 Applied Materials, Inc. Vaporization and deposition apparatus

Also Published As

Publication number Publication date
EP1214732B1 (de) 2007-05-30
KR100779885B1 (ko) 2007-11-28
AU7368300A (en) 2001-04-24
JP2003520418A (ja) 2003-07-02
WO2001022478A1 (en) 2001-03-29
DE60035056T2 (de) 2008-01-31
JP4837860B2 (ja) 2011-12-14
WO2001022478A9 (en) 2002-11-28
TW492101B (en) 2002-06-21
US6227140B1 (en) 2001-05-08
EP1214732A1 (de) 2002-06-19
KR20020047183A (ko) 2002-06-21

Similar Documents

Publication Publication Date Title
DE60035056D1 (de) Anlage zur behandlung von halbleitern mit durch strahlungsheizelementen geheizten keramischer auskleidung
DE60045386D1 (de) Gerät zur thermischen behandlung von bandscheiben
DE69941196D1 (de) Wärmebehandelte Siliziumscheiben mit verbesserter Eigengetterung
ATE287266T1 (de) Neue kombination nichtsedierender antihistaminika mit substanzen, die die leukotrienwirkung beeinflussen, zur behandlung der rhinitis/konjunktivitis
DE60042648D1 (de) Humanisierte anti-erbb2 antikörper und behandlung mit anti-erbb2 antikörper
DE60107919D1 (de) Keramisches Heizelement zum Erwärmen von Wafern
DE19880398T1 (de) Substrattemperatur-Meßvorrichtung, Substrattemperatur-Meßverfahren Substraterwärmungsverfahren und Wärmebehandlungsvorrichtung
ATE293447T1 (de) 2-oxy-benzoxazinonderivate zur behandlung von fettleibigkeit
DE60116533D1 (de) Wärmebehandlungsanlage
DE60019556D1 (de) 2-amino-benzoxazinonderivate zur behandlung von fettleibigkeit
DE60217317T8 (de) Wärmebehandlungsverfahren
ATE315938T1 (de) 4'-substituierte nukleoside zur behandlung von hepatitis-c-virus-vermittelten erkrankungen
DE60001421T2 (de) Behandlung von abgas
DE60019158D1 (de) Neue oxabispidin-verbindungen zur behandlung von herzarrhythmien
DE69911309D1 (de) Siliciumnitridsinterkörper hoher Wärmeleitfähigkeit und Verfahren zum Herstellen desselben
DE60030554D1 (de) Verwendungen von et743 zur behandlung von krebs
DE60136477D1 (de) Retinoide zur behandlung von emphysem
FI964585A0 (fi) Käsitelty alusta, jolla on parantuneet irrotusominaisuudet
DE69930330D1 (de) Durchlaufwärmebehandlungsofen
DE69919645D1 (de) Einrichtung zur thermischen Behandlung und damit erzeugte Wärmeentwicklungseinrichtung
DK1110922T3 (da) Fremgangsmåde til termisk behandling af melformede råmaterialer
ATE298569T1 (de) Virus behandlung
DE60032358D1 (de) Verfahren zur herstellung von si-sic-gliedern zur thermischen behandlung von halbleitern
FI20012170A (fi) Menetelmä lauhteiden käsittelemiseksi
ATA4099A (de) Vorrichtung zur chemischen behandlung von wafern

Legal Events

Date Code Title Description
8364 No opposition during term of opposition